TWI835924B - 光偵測元件 - Google Patents
光偵測元件 Download PDFInfo
- Publication number
- TWI835924B TWI835924B TW108141799A TW108141799A TWI835924B TW I835924 B TWI835924 B TW I835924B TW 108141799 A TW108141799 A TW 108141799A TW 108141799 A TW108141799 A TW 108141799A TW I835924 B TWI835924 B TW I835924B
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- Taiwan
- Prior art keywords
- semiconductor layer
- detection element
- light detection
- layer
- light
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 141
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000001514 detection method Methods 0.000 claims description 57
- 238000010521 absorption reaction Methods 0.000 claims description 38
- 230000000903 blocking effect Effects 0.000 claims description 31
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 176
- 239000000463 material Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- -1 AlGaInAs Inorganic materials 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000008280 blood Substances 0.000 description 4
- 210000004369 blood Anatomy 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
一種光偵測元件包含一基板、一第一半導體層、一吸收結構、一第二半導體層及一阻擋層。吸收結構位於第一半導體層上且第二半導體層位於吸收結構上。阻擋層位於吸收結構和第二半導體層之間，且具有一傳導帶大於第二半導體層之傳導帶或是具有一價帶小於第二半導體層之價帶。
Description
本發明係關於一種光偵測元件，尤其是一種包含載子阻擋層之光偵測元件。
隨著科技發展，感測元件的應用越來越廣，例如：家用、車用、醫療、消費性電子等。目前感測元件係利用光學多層膜過濾雜訊光，以使感測元件能準確地僅對特定光做響應。然，光學多層膜需要額外的製做成本，且其對於斜向入射的雜訊光阻擋效果不佳，因此，如何有效地移除雜訊光，提高光偵測元件的準確性，仍是目前努力的目標。
一種光偵測元件包含一基板、一第一半導體層、一吸收結構、一第二半導體層及一阻擋層。吸收結構位於第一半導體層上且第二半導體層位於吸收結構上。阻擋層位於吸收結構和第二半導體層之間，且具有一傳導帶大於第二半導體層之傳導帶或是具有一價帶小於第二半導體層之價帶。
100、200、300、400:光偵測元件
11:基板
121:第一半導體層
122:吸收結構
123:第二半導體層
124:阻擋結構
125:接觸結構
126:第三半導體層
127:反射結構
128:接合結構
13:第一電極
14:第二電極
20:感測模組
210:承載體
211:光發射元件
212:光偵測元件
213:第一封膠結構
214:第二封膠結構
第1A圖為本發明之一實施例的光偵測元件的上視示意圖。
第1B圖為第1A圖沿著AA’線之剖面示意圖。
第2圖為本發明之一實施例的光偵測元件的剖面示意圖。
第3圖為本發明之一實施例的光偵測元件的剖面示意圖。
第4圖為本發明之一實施例的光偵測元件的剖面示意圖。
第5圖為本發明之一實施例的光偵測元件的剖面示意圖。
第6圖為本發明之一實施例的感測模組的剖面示意圖。
以下實施例將伴隨著圖式說明本發明之概念，在圖式或說明中，相似或相同之部分係使用相同之標號，並且在圖式中，元件之形狀、厚度或高度在合理範圍內可擴大或縮小。本發明所列舉之各實施例僅用以說明本發明，並非用以限制本發明之範圍。對本發明所作之任何顯而易知之修飾或變更皆不脫離本發明之精神與範圍。
此外，在以下實施例中可以併入其他層/結構或步驟。例如，”在第一層/結構上形成第二層/結構”的描述可以包括第一層/結構直接接觸第二層/結構的實施例，或者包括第一層/結構間接接觸第二層/結構，亦即有其他層/結構存在於第一個層/結構和第二個層/結構之間。此外，第一層/結構和第二層/結構間的空間相對關係可以根據裝置的操作或使用而改變。另一方面，本公開中的不同實施例可以具有重複的數字和/或字母。重複是為了簡化和清楚，而不是為了表示不同實施例之間的關係。
第1A圖為本發明之一實施例的光偵測元件100的上視示意圖。第1B圖為第1A圖沿著AA’線之剖面示意圖。光偵測元件100係用以吸收光並將光能轉換為電能或光電流。一實施例中，光偵測元件可以為光電二極體(photodiode)。光偵測元件100包含基板11、第一半導體層121、吸收結構122、第二半導體層123、第一電極13及一第二電極14。基板11可用以支持位於其上之
結構。吸收結構122位於第一半導體層21和第二半導體層123之間。第一電極13及一第二電極14係用以電性連接第一半導體層121、吸收結構122及第二半導體層123，以傳導光偵測元件100吸收光所產生的光電流。第一電極13及一第二電極14分別位於基板11的相對兩側上，使光偵測元件100形成一垂直式型態。於另一實施例中，第一電極13及一第二電極14可位於基板11的同一側上，使光偵測元件100形成一水平式或是覆晶型態。
第一半導體層121和第二半導體層123包含摻雜(doped)之半導體層且藉由添加摻雜物(dopant)而具有不同或相同的導電型態(n型或p型)。若電洞為多數載子即稱為p型，若電子為多數載子即為稱n型。吸收結構122包含摻雜(doped)、未摻雜(un-doped)或未故意摻雜(un-intentionally doped)之半導體結構。摻雜物(dopant)可為鎂(Mg)、碳(C)、鋅(Zn)、矽(Si)、硒(Se)或碲(Te)等。
吸收結構122為光偵測元件100用以吸收光的區域，且依據吸收結構122之材料(或能隙(band gap)來決定欲被吸收之光線的波長範圍，換言之，吸收結構122可吸收能量大於其能隙的光。吸收結構122的能隙可設計介於0.72ev與1.77ev(其相對應波長為介於700nm及1700nm的紅外光)、介於1.77ev與2.03ev(其相對應波長為介於610nm及700nm之間的紅光)、介於2.1ev與2.175ev(其相對應波長為介於570nm及590nm之間的黃光)、介於2.137ev與2.48ev(其相對應波長為介於500nm及580nm之間的綠光)、介於2.53ev與3.1ev(其相對應波長為介於400nm及490nm之間的藍光或深藍光)、或是介於3.1ev與4.96ev(其相對應波長為介於250nm及400nm之間的紫外光)。
光偵測元件100可包括量子井結構、單異質結構或雙異質結構。第一半導體層121、第二半導體層123和吸收結構122可包含Ⅲ-V族化合物半導體，例如GaAs、InP、InGaAs、AlGaAs、AlGaInAs、GaP、InGaP、AlInP、AlGaInP、GaN、InGaN、AlGaN、AlGaInN、AlAsSb、InGaAsP、InGaAsN或AlGaAsP。
在本實施例中，若無特別說明，化學表示式包含「符合化學劑量之化合物」及「非符合化學劑量之化合物」，其中，「符合化學劑量之化合物」例如為三族元素的總元素劑量與五族元素的總元素劑量相同，反之，「非符合化學劑量之化合物」例如為三族元素的總元素劑量與五族元素的總元素劑量不同。舉例而言，化學表示式為AlGaAs系列即代表包含三族元素鋁(Al)及/或鎵(Ga)，以及包含五族元素砷(As)，其中三族元素(鋁及/或鎵)的總元素劑量可以與五族元素(砷)的總元素劑量相同或相異。
另外，由化學表示式表示的各化合物為符合化學劑量之化合物時，AlGaAs代表Alx1Ga(1-x1)As，其中，0<x1<1；AlInP代表Alx2In(1-x2)P，其中，0<x2<1；AlGaInP代表(Aly1Ga(1-y1)1-x3Inx3P，其中，0<x3<1，0<y1<1；AlGaInAs代表(Aly2Ga(1-y2))1-x4Inx4As，其中，0≦x4≦1，0≦y2≦1；AlGaN代表Alx5Ga(1-x5)N，其中，0<x5<1；AlAsSb代表AlAsx6Sb(1-x6)，其中，0≦x6≦1；InGaP代表Inx7Ga(1-x7)P，其中，0<x7<1；InGaAsP代表Inx8Ga1-x8As1-y3Py3，其中，0≦x8≦1，0≦y3≦1；InGaAsN代表Inx8Ga1-x8As1-y4Ny4，其中，0<x9<1，0<y4<1；AlGaAsP代表Alx10Ga1-x10As1-y5Py5，其中，0<x10<1，0<y5<1；InGaAs代表Inx11Ga(1-x11)As，其中，0<x11<1；InGaN代表Inx12Ga(1-x12)N，其中，0<x12<1；AlGaInN代表(Aly6Ga(1-y6)1-x13Inx13P，其中，0<x13<1，0<y6<1；AlInAs代表Alx14In(1-x14)As，其中，0<x14<1。
基板11係為一可導電材料，且包含金屬材料、半導體材料或透明導電材料。金屬材料可以為銅(Cu)、鋁(Al)、鉻(Cr)、錫(Sn)、金(Au)、鎳(Ni)、鈦(Ti)、鉑(Pt)、鉛(Pb)、鋅(Zn)、鎘(Cd)、銻(Sb)、鈷(Co)或上述材料之合金。半導體材料可以為摻雜或未摻雜之Ⅳ族半導體或Ⅲ-V族半導體，例如：矽(Si)、鍺(Ge)、碳化矽(SiC)、氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)、磷砷化鎵(AsGaP)或磷化銦(InP)等。透明導電材料可以為氧化物、類鑽碳薄膜(DLC)或石墨烯，氧化物例如為氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)或氧化銦鋅(IZO)。第一半導體層121、吸收結構122及第二半導體層123可透過有機金屬化學氣相沉積法(MOCVD)、分子束磊晶法(MBE)或氫化物氣相磊晶法(HVPE)等磊晶方法成長於基板11或另一成長基板上。若是第一半導體層121、吸收結構122及第二半導體層123成長在成長基板上，則可藉由基板轉移技術，透過黏結層(圖未示)將第一半導體層121、吸收結構122及第二半導體層123接合至基板11，並可選擇性地移除成長基板。基板11之導電型態(例如：n型或p型)可與第一半導體層121相同或不同。
第一半導體層121具有一第一傳導帶(conduction band)Ec1、一第一價帶(valence band)Ev1及第一能隙(band gap)E1(=Ec1-Ev1)。吸收結構122具有一第二傳導帶Ec2、一第二價帶Ev2及一第二能隙E2(=Ec2-Ev2)。第二半導體層123具有一第三傳導帶Ec3、一第二價帶Ev3及一第三能隙E3(=Ec3-Ev3)。當第一半導體層121具有一固定化學組成時(例如：In0.5Ga0.5P)，其能隙則為一固定值且定義為第一能隙E1；當第一半導體層121具有漸變化學組成時(例如：
InaGa1-aP，0.1<a<0.3)，且經由掃描式電子顯微鏡(SEM)無法觀察其介面而視為一層時，其能隙則為一範圍，且該範圍之最大值即定義為第一能隙E1。第二半導體層123及吸收結構122亦以同樣方式定義第二能隙E2和第三能隙E3。此外，吸收結構122可包含單層或多層。當吸收結構122由單層所組成時，該單層之能隙即定第二能隙E2；當吸收結構122由多層所組成時，該些多層中之能隙最小值即定義為第二能隙E2。
入射光係由第二半導體層123入射至光偵測元件100。在本實施例中，第三能隙E3大於第二能隙E2，因此當入射光的能量小於第三能隙E3且大於第二能隙E2時，該入射光會穿透第二半導體層123且被吸收結構122吸收以產生電子電洞對，進而於電場的作用下產生光電流。當入射光的能量大於第三能隙E3時，則會被第二半導體層123吸收而產生電子電洞對。換言之，假定入射光具有第一波長範圍之第一光及第二波長範圍之第二光，第二波長範圍小於第一波長範圍(亦即第二光之光子能量(En2)大於第一光的光子能量(En1))，且第一光的光子能量小於第三能隙E3且大於第二能隙E2，第二光之光子能量大於第三能隙E3，當入射光照射於光偵測元件100時，具有第二波長範圍之第二光會被第二半導體層123所吸收而具有第一波長範圍之第一光會穿透第二半導體層123且被吸收結構122所吸收。
光偵測元件100更包含一阻擋層124位於吸收結構122和第二半導體層123之間且可用前述之磊晶方法成長。阻擋層124具有一第四傳導帶Ec4、一第四價帶Ev4及一第四能隙E4(=Ec4-Ev4)。第四能隙E4大於第三能隙E3且大於第二能隙E2，用以阻擋載子流動，降低非於吸收結構122中所產生之電子電洞對而於電場的作用下產生之光電流，增加光偵測元件100的準確性。詳言之，如上
所述，由於第二半導體層123會吸收具有第二波長範圍之第二光而產生電子電洞對，且於電場的作用下，電子電洞(載子)會流動而產生光電流，藉由阻擋層124的設置，可阻擋載子往第一電極13或是/且第二電極14的方向流動，使得於第二半導體層123所產生的電子電洞對不會貢獻於光偵測元件100所量測到之光電流，以提升光偵測元件100的準確性及靈敏度。於一實施例中，第四能隙E4大於第三能隙E3的能階差介於0.05eV和1eV之間(例如：0.1eV、0.5eV)。
在一實施例中，當阻擋層124係阻擋電子時，阻擋層124之第四傳導帶Ec4大於第二半導體層123之第三傳導帶Ec3，亦即，Ec4-Ec3>0，更能有效地阻擋電子流動。在一實施例中，當阻擋層124之第四傳導帶Ec4大於第二半導體層123之第三傳導帶Ec3時，第四能隙E4可大於、小於或等於第三能隙E3。在一實施例中，當阻擋層124係阻擋電洞時，阻擋層124之第四價帶EV4小於第二半導體層123之第三價帶Ev3，亦即EV4-Ev3<0，更能有效地阻擋電洞流動。類似地，當阻擋層124之第四價帶EV4小於第二半導體層123之第三價帶Ev3時，第四能隙E4可大於、小於或等於第三能隙E3。
在一實施例中，第一半導體層121為n型半導體層且第二半導體層123為p型半導體層且當入射光係由第二半導體層123入射至光偵測元件100時，阻擋層124係阻擋電子往吸收結構124流動，因此阻擋層124之第四傳導帶Ec4大於第二半導體層123之第三傳導帶Ec3。在另一實施例中，第一半導體層121為p型半導體層且第二半導體層123為n型半導體層且當入射光係由第二半導體層123入射至光偵測元件100時，阻擋層124係阻擋電洞往吸收結構124流動，因此阻擋層124之第四價帶EV4小於第二半導體層123之第三價帶Ev3。
阻擋層124具有一厚度介於10nm和1um之間，且可為50nm、100nm或500nm。阻擋層124可摻雜(doped)、未摻雜(un-doped)或未故意摻雜(un-intentionally doped)之半導體層且包含Ⅲ-V族化合物半導體，例如：AlGaInAs，AlInAs、InGaP、AlInP、InP。阻擋層124可具有與第二半導體層123相同的導電型態(n型或p型)。
在一實施例中，阻擋層124包含鋁，例如AlGaInAs，AlInAs、AlInP，且鋁含量(以原子百分比計)於所有三族元素中的比例介於20%與70%之間(例如：30%、40%或50%)，藉此，第二半導體層123因吸光產生的電子或電洞易於阻擋層124中復合(recombination)或消滅而不會產生光電流。在一實施例中，第二半導體層123之第三能隙E3介於1.3eV和1.4eV之間(例如InP)，可提升光偵測元件100的可靠性。
在本實施例中，於光偵測元件100的光譜響應圖中，光偵測元件100具有一最大EQE值(EQEmax)。藉由阻擋層124的設置，使得具有一能隙大於第三能隙E3的光，其EQE值小於15% *EQEmax(例如：10%，5%)。舉例來說，光偵測元件100之吸收結構122為InGaAs且可吸收1700nm以下的光且具有一最大EQE值，第二半導體層123為InP且可吸收900nm以下的光，藉由阻擋層124的設置，使得可見光(例如：700nm、600nm、500nm)的EQE值小於15%*EQEmax。
此外，於應用上，當設計光偵測元件100欲吸收或偵測一目標光時，可選擇吸收結構122之材料以使得其第二能隙E2等於或略小於目標光之能量Eo(Eo*0.9≦E2=Eo)，由於能量大於或等於第二能隙E2的目標光及非目標光都會被吸收結構122所吸收，因此光偵測元件100無法僅吸收或偵測目標光。如前所述，由於第二半導體層123可以吸收大於第三能隙E3的光且使小於第三能隙E3的
光穿透，因此第二半導體層123可濾除部分之非目標光。第二能隙E2和第三能隙E3的能隙差(△E1=E3-E2)符合0.1ev≦△E1≦0.5ev，可增加光偵測元件100的實用性及準確性。進一步，藉由阻擋層124的設置，第二半導體層123吸收光所產生的光電流亦不會影響光偵測元件100的準確性及靈敏度。
在一實施例中，第一半導體層121、吸收結構122、第二半導體層123及阻擋層124彼此之間的晶格可以匹配(lattice match)或不匹配(lattice mismatch)。詳言之，第一半導體層121具有一第一本質晶格常數、吸收結構122具有一第二本質晶格常數、第二半導體層123具有一第三本質晶格常數及阻擋層124具有一第四本質晶格常數。當兩層結構之本質晶格常數的差異不大於0.1%時，則定義為匹配(lattice match)；當兩層結構之本質晶格常數的差異大於0.1%時，則定義為不匹配(lattice mismatch)。此外，當吸收結構122由單層所組成時，該單層之晶格常數即定義為第一本質晶格常數，當吸收結構122由多層所組成時，該些多層之本質晶格常數的平均值(算術平均數)即定義為第一本質晶格常數。「本質晶格常數」係定義為一實質上無應變(strain)之層的晶格常數a0。
再者，可以藉由任何合適的方式獲得晶格常數。舉例來說，可以藉由穿透式電子顯微鏡(transmission electron microscopy，TEM)作成繞射圖案(diffraction pattern)來解析，或者，晶格常數資訊可以藉由在溫度為300k下由XRD(X-射線繞射)得知，或可由書籍(例如：2009年出版商John Wiley & Sons Inc.出版之Properties of Semiconductor Allovs：Group-IV,III-V and II-VI Semiconductors)查詢得知。
光偵測元件100可選擇性地包含一接觸結構125設置於第二半導體層123和第一電極13之間，用以降低第二半導體層123和第一電極13之間的電阻值並提供較低的電阻路徑以供電流流過。
第2圖為本發明之一實施例的光偵測元件200的剖面示意圖。光偵測元件200與光偵測元件100具有類似的結構。第2圖與第1圖以相同符號描述相同元件，並且這些元件的材料及特性如前所述，故不再贅述。光偵測元件200之更包含一第三半導體層126設置於阻擋層124和第二半導體層123之間，或是設置於第二半導體層123上。第三半導體層126具有一第五傳導帶(conduction band)Ec5、一第五價帶(valence band)Ev5及一第五能隙E5(=Ec5-Ev5)。第五能隙E5小於第三能隙E3及第四能隙E4但大於第二能隙E2。在一實施例中，當阻擋層124係阻擋電子時，阻擋層124之第四傳導帶Ec4大於第三半導體層126之第五傳導帶Ec5，亦即Ec4-Ec5>0。在一實施例中，當阻擋層124係阻擋電洞時，阻擋層124之第四價帶EV4小於第三半導體層126之第五價帶EV5，亦即EV4-EV5<0。在一實施例中，第五能隙E5大於、小於或等於第四能隙E4。
如前所述，第二半導體層123能濾除部分之非目標光，第三半導體層126更能進一步吸收能量小於第三能隙E3且大於第五能隙E5的非目標光，使得吸收結構122更能準確地吸收目標光，以增加光偵測元件100的實用性及準確性。此外，藉由阻擋層124的設置，亦使得第三半導體層126吸收光所產生的電子電洞對不會流動，進而不會產生光電流。第二能隙E2和第五能隙E5的能隙差(△E2)符合0.05ev≦△E2≦0.2ev。第三半導體層126、第二半導體層123及阻擋層124具有相同的導電型態(n型或p型)。
在一實施例中，第二半導體層123與阻擋層124之間可設置多個半導體層，用以吸收非目標光。此外，當阻擋層124係阻擋電子時，阻擋層124之第四傳導帶Ec4大於與阻擋層124直接接觸之該半導體層的傳導帶，以有效地阻擋電子流動。當阻擋層124係阻擋電洞時，阻擋層124之第四價帶Ev4小於與阻擋層124直接接觸之該半導體層的價帶，以有效地阻擋電洞流動。該些多個半導體層與第二半導體層123及阻擋層124具有相同的導電型態(n型或p型)。在一實施例中，該些半導體層的能隙係沿著第二半導體層123往阻擋層124的方向由大變小。
第3圖為本發明之一實施例的光偵測元件300的剖面示意圖。光偵測元件300與光偵測元件100具有類似的結構。第3圖與第1圖以相同符號描述相同元件，並且這些元件的材料及特性如前所述，故不再贅述。光偵測元件300更包含一改質區16形成於第二半導體層123、阻擋層124及部分之吸收結構122中。詳言之，係利用離子擴散或是離子佈植技術，使得第二半導體層123、阻擋層124及吸收結構122之一區域中的多數載子從電子轉為電洞或是電洞轉為電子以改變導電型態或導電度進而形成改質區16。第二半導體層123、阻擋層124及吸收結構122中，未經過離子擴散或是離子佈植的區域仍保有原來的導電型態或導電度，且定義為未改質區。本實施例中，第二半導體層123及阻擋層124具有相同的導電型態(例如：n型)，且改質區16具有與第二半導體層123及阻擋層124不同的導電型態(例如：p型)。此外，第一半導體層121及第二半導體層123亦具有相同的導電型態(例如：n型)。
第4圖為本發明之一實施例的光偵測元件400的剖面示意圖。光偵測元件400與光偵測元件300具有類似的結構。第4圖與第3圖以相同符號描述相同元件，並且這些元件的材料及特性如前所述，故不再贅述。光偵測元件400之更
包含一第三半導體層126設置於阻擋層124和第二半導體層123之間，或是設置於第二半導體層123上。同樣地，第三半導體層126的導電型態與第二半導體層123、阻擋層124及吸收結構122相同，且改質區16亦形成於第三半導體層126中。
第5圖為本發明之一實施例的光偵測元件500的剖面示意圖。光偵測元件500與光偵測元件300具有類似的結構。第5圖與第3圖以相同符號描述相同元件，並且這些元件的材料及特性如前所述，故不再贅述。光偵測元件500更包含一反射結構127位於基板11和第一半導體層121之間，用以反射未被吸收結構122的光朝向吸收結構122進而進行第二次的吸收，以增加光電轉換效率。更者，藉由反射結構127的設置，可使吸收結構122的厚度減薄進而降低光偵測元件500的厚度，有利於小尺寸的應用。反射結構127包含金屬或金屬合金。金屬包含金、銀、鋁、銅。金屬合金包含上述金屬之合金。在一實施例中，反射結構127可包含複數個不同折射率的膜層交互週期性的堆疊，以形成分散式布拉格反射鏡(Distributed Bragg Reflector，DBR)，其材料可包含半導體、氧化物或氮化物。半導體包含AlGaAs、GaAs、AlAs、AlGaInP、AlInP、InGaP、InP、AlGaInAs。氧化物包含氧化鋁(Al2O3)、氧化矽(SiO2)、二氧化鈦(TiO2)、五氧化二鈮(Nb2O5)。氮化物包含氮化矽(SiNx)。
選擇性地，光偵測元件500更包含一接合結構128可位於反射結構127和基板11之間。接合結構128可為單層或多層。接合結構128可為導電或不導電。接合結構128為導電時，可包含透明導電材料、金屬或合金。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化鋅(ZnO)、磷化鎵(GaP)、氧化銦鈰(ICO)、氧化銦鎢(IWO)、氧化銦鈦(ITiO)、氧化
銦鋅(IZO)、氧化銦鎵(IGO)、氧化鎵鋁鋅(GAZO)、石墨烯或上述材料之組合。金屬包含但不限於銅(Cu)、鋁(Al)、錫(Sn)、金(Au)、銀(Ag)、鉛(Pb)、鈦(Ti)、鎳(Ni)、鉑(Pt)或鎢(W)等。合金可包含選自由上述金屬所組成之群組中的至少兩者。接合結構128為不導電時，可包含氧化物或氮化物。氧化物或氮化物可參考前述段落之描述。第6圖為本發明之一實施例的感測模組20的剖面示意圖。感測模組20包含承載體210、光發射元件211、光偵測元件212、第一封膠體213及第二封膠體214。光偵測元件212可為前述之光偵測元件100~500。光發射元件211及光偵測元件212位於承載體210上，並與承載體210上的電路連接結構(圖未示)。第一封膠體213覆蓋光發射元件211且第二封膠體214覆蓋光偵測元件212。承載體210可以為印刷電路板、有機材質、無機材質、或是具有可撓或彎曲的材質。有機材質可以包含酚醛樹酯、玻璃纖維、環氧樹脂、聚酰亞胺或雙馬來醯亞胺-三氮雜苯樹脂(BT)。無機材質可以包含鋁或者陶瓷材料。可撓或彎曲的材質可以包含PET、PI(聚酰亞胺)、HPVDF(聚偏二氟乙烯)、或ETFE(乙烯-四氟乙烯)。第一封膠體213和第二封膠體214包含環氧樹脂(Epoxy)、矽膠(Silicone)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、Su8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)或聚醚醯亞胺(Polyetherimide)。
光偵測元件212係設計用以偵測光發射元件211所發出的光。詳言之，光發射元件211發射一光(前述之目標光)後，經過物體反射而朝向光偵測元件212，光偵測元件212係偵測該反射光而產生光電流。光發射元件211所發出的光之波長範圍可根據應用來選定，例如，當應用於醫療感測時，可選擇綠光範圍、紅光範圍或紅外光範圍。綠光範圍(波長介於500nm及580nm)可用於偵
測心率及血壓，紅光範圍(波長介於610nm及700nm)可用於偵測血氧，紅外光範圍(波長介於700nm及1700nm)可用於偵測血氧、血糖、血脂。
感測模組20可應用於照明、醫療、顯示、通訊、感測、電源系統等領域的產品，例如燈具、監視器、手機、平板電腦、車用儀表板、電視、電腦、穿戴裝置(如手錶、手環、項鍊等)、交通號誌、戶外顯示器、醫療器材等。
以上所述之實施例僅是為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以此限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。
100:光偵測元件
11:基板
121:第一半導體層
122:吸收結構
123:第二半導體層
124:阻擋層
125:接觸結構
13:第一電極
14:第二電極
Claims (10)
- 一種光偵測元件，包含：一基板；一第一半導體層，位於該基板上；一吸收結構，位於該第一半導體層上，並具有一第一傳導帶、一第一價帶以及一第一能隙；一第二半導體層，位於該吸收結構上，並具有一第二傳導帶、一第二價帶以及一第二能隙；一阻擋層，位於該吸收結構和該第二半導體層之間，且具有一第三傳導帶、一第三價帶以及一第三能隙；一改質區，形成於該阻擋層及該第二半導體層中；一第一電極，設置於該第二半導體層上並對應該改質區；以及一第二電極，設置於該基板遠離該第一半導體層的一側；其中，該第三傳導帶大於該第二傳導帶，或該第三價帶小於該第二價帶。
- 如申請專利範圍第1項所述之光偵測元件，其中，該阻擋層包含複數個三族元素且該複數個三族元素包含鋁，且該鋁具有一鋁含量於該複數個三族元素中的比例介於20%至70%之間。
- 如申請專利範圍第1項所述之光偵測元件，更包含一第三半導體層位於該阻擋層及該第二半導體層之間，該第三半導體層具有一第四能隙小於該第三能隙。
- 如申請專利範圍第1項所述之光偵測元件，其中，該阻擋層具有一厚度介於10nm和1um之間。
- 如申請專利範圍第1項所述之光偵測元件，更包含一反射結構，位於該基板和該第一半導體層之間。
- 如申請專利範圍第1項所述之光偵測元件，更包含一接觸結構設置於該第二半導體層和該第一電極之間，且該接觸結構接觸該改質區。
- 如申請專利範圍第6項所述之光偵測元件，其中，該接觸結構具有一側壁，該第一電極覆蓋該側壁。
- 如申請專利範圍第1項所述之光偵測元件，其中，該第一半導體層和該第二半導體層具有相同的導電型態，該改質區與該第二半導體層具有相異的導電型態。
- 如申請專利範圍第1項所述之光偵測元件，其中，該第二半導體層具有一第一厚度，該阻擋層具有一第二厚度小於該第一厚度。
- 一種感測模組，包含：一承載體；如申請專利範圍第1項所述之光偵測元件，位於該承載體上；一封膠結構，覆蓋該光偵測元件。
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112820786A (zh) | 2021-05-18 |
| US11935969B2 (en) | 2024-03-19 |
| TW202121701A (zh) | 2021-06-01 |
| US20210151612A1 (en) | 2021-05-20 |
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