JP2016211021A - 気化供給装置 - Google Patents
気化供給装置 Download PDFInfo
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- JP2016211021A JP2016211021A JP2015093494A JP2015093494A JP2016211021A JP 2016211021 A JP2016211021 A JP 2016211021A JP 2015093494 A JP2015093494 A JP 2015093494A JP 2015093494 A JP2015093494 A JP 2015093494A JP 2016211021 A JP2016211021 A JP 2016211021A
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- 230000008016 vaporization Effects 0.000 title claims abstract description 65
- 238000009834 vaporization Methods 0.000 title claims abstract description 54
- 239000007788 liquid Substances 0.000 claims abstract description 194
- 239000006200 vaporizer Substances 0.000 claims abstract description 93
- 238000001514 detection method Methods 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims description 43
- 239000007789 gas Substances 0.000 description 91
- 239000002994 raw material Substances 0.000 description 52
- 239000011344 liquid material Substances 0.000 description 19
- 230000007423 decrease Effects 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000012071 phase Substances 0.000 description 9
- 239000007791 liquid phase Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/008—Feed or outlet control devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J7/00—Apparatus for generating gases
- B01J7/02—Apparatus for generating gases by wet methods
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
【解決手段】 液体Lを加熱して気化させる気化器2と、気化器から送出されるガスの流量を制御する流量制御装置3と、気化器2への液体の供給路4に介在された第1制御弁5と、気化器2で気化され流量制御装置3に送られるガスの圧力を検出するための圧力検出器6と、気化器2内の所定量を超える液体のパラメータを測定する液体検知部7Aと、圧力検出器6の検出した圧力値に基づいて気化器2に所定量の液体Lを供給するように第1制御弁5を制御するとともに、液体検知部7が液体を検知した時には第1制御弁5を閉じるように制御する制御装置8と、を備える。
【選択図】 図1
Description
2 気化器
2a2 気化室
2b1 第1ガス加熱室
2c1 第2ガス加熱室
3 流量制御装置
5 第1制御弁
6 圧力検出器
7A,7B,7C 液体検知部
8 制御装置
70 第2制御弁
Claims (8)
- 液体を加熱して気化させる気化器と、
前記気化器から送出されるガスの流量を制御する流量制御装置と、
前記気化器への液体の供給路に介在された第1制御弁と、
前記気化器で気化され前記流量制御装置に送られるガスの圧力を検出するための圧力検出器と、
前記気化器内の所定量を超える液体のパラメータを測定する液体検知部と、
前記圧力検出器の検出した圧力値に基づいて前記気化器に所定量の液体を供給するように前記第1制御弁を制御するとともに、前記液体検知部が液体を検知した時には前記第1制御弁を閉じるように制御する制御装置と、
を備えることを特徴とする気化供給装置。 - 前記気化器と前記流量制御装置の間のガス流路に介在された第2制御弁を更に備え、
前記制御装置は、前記液体検知部が液体を検知した時に、前記第1制御弁を閉じるとともに前記第2制御弁を閉じるように制御することを特徴とする、請求項1に記載の気化供給装置。 - 液体を加熱して気化させる気化器と、
前記気化器から送出されるガスの流量を制御する流量制御装置と、
前記気化器への液体の供給路に介在された第1制御弁と、
前記気化器で気化され前記流量制御装置に送られるガスの圧力を検出するための圧力検出器と、
前記気化器と前記流量制御装置の間のガス流路に介在された第2制御弁と、
前記気化器内の所定量を超える液体のパラメータを測定する液体検知部と、
前記圧力検出器の検出した圧力値に基づいて前記気化器に所定量の液体を供給するように前記第1制御弁を制御するとともに、前記液体検知部が液体を検知した時に前記第2制御弁を閉じるように制御する制御装置と、
を備えることを特徴とする気化供給装置。 - 前記液体検知部が温度検出器であることを特徴とする請求項1〜3の何れかに記載の気化供給装置。
- 前記液体検知部が液面計であることを特徴とする請求項1〜3の何れかに記載の気化供給装置。
- 前記液体検知部がロードセルであることを特徴とする請求項1〜3の何れかに記載の気化供給装置。
- 前記気化器が気化室を備え、該気化室に前記液体検知部が配設されていることを特徴とする請求項1〜6の何れかに記載の気化供給装置。
- 前記気化器が気化室と該気化室に連通するガス加熱室とを備え、前記ガス加熱室に前記液体検知部が配設されていることを特徴とする請求項1〜6の何れかに記載の気化供給装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015093494A JP6578125B2 (ja) | 2015-04-30 | 2015-04-30 | 気化供給装置 |
KR1020177017535A KR101962659B1 (ko) | 2015-04-30 | 2016-04-11 | 기화 공급 장치 |
CN201680007156.XA CN107532298B (zh) | 2015-04-30 | 2016-04-11 | 气化供给装置 |
US15/565,696 US10646844B2 (en) | 2015-04-30 | 2016-04-11 | Vaporization supply apparatus |
PCT/JP2016/001967 WO2016174832A1 (ja) | 2015-04-30 | 2016-04-11 | 気化供給装置 |
TW105112439A TWI632609B (zh) | 2015-04-30 | 2016-04-21 | Gasification supply device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015093494A JP6578125B2 (ja) | 2015-04-30 | 2015-04-30 | 気化供給装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016211021A true JP2016211021A (ja) | 2016-12-15 |
JP2016211021A5 JP2016211021A5 (ja) | 2018-03-15 |
JP6578125B2 JP6578125B2 (ja) | 2019-09-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015093494A Active JP6578125B2 (ja) | 2015-04-30 | 2015-04-30 | 気化供給装置 |
Country Status (6)
Country | Link |
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US (1) | US10646844B2 (ja) |
JP (1) | JP6578125B2 (ja) |
KR (1) | KR101962659B1 (ja) |
CN (1) | CN107532298B (ja) |
TW (1) | TWI632609B (ja) |
WO (1) | WO2016174832A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190136370A1 (en) * | 2017-11-07 | 2019-05-09 | Horiba Stec, Co., Ltd. | Vaporization system and vaporization system program |
KR20190140002A (ko) * | 2017-07-25 | 2019-12-18 | 가부시키가이샤 후지킨 | 유체 제어 장치 |
JPWO2021124723A1 (ja) * | 2019-12-16 | 2021-06-24 | ||
WO2022091713A1 (ja) * | 2020-10-31 | 2022-05-05 | 株式会社フジキン | ガス供給システムおよびガス供給方法 |
JP7457522B2 (ja) | 2020-02-20 | 2024-03-28 | 株式会社堀場エステック | 気化システム |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20200149162A1 (en) | 2017-07-25 | 2020-05-14 | Fujikin Incorporated | Fluid control device |
KR20240024359A (ko) | 2019-08-30 | 2024-02-23 | 가부시키가이샤 후지킨 | 다이어프램 밸브 |
CN114269966A (zh) * | 2019-09-19 | 2022-04-01 | 株式会社富士金 | 气化供给装置 |
KR102646603B1 (ko) | 2019-12-06 | 2024-03-12 | 가부시키가이샤 후지킨 | 유량 제어 장치의 이상 검지 방법 및 유량 감시 방법 |
US20230349041A1 (en) * | 2020-07-27 | 2023-11-02 | Jiangsu Favored Nanotechnology Co., Ltd. | Raw material gasification device, film coating device, film coating apparatus and feeding method therefor |
JP2022061803A (ja) * | 2020-10-07 | 2022-04-19 | 東京エレクトロン株式会社 | 気化装置、ガス供給装置及びガス供給装置の制御方法 |
KR20230069985A (ko) * | 2021-03-11 | 2023-05-19 | 가부시키가이샤 후지킨 | 기화기 및 기화 공급 장치 |
WO2022209639A1 (ja) | 2021-04-01 | 2022-10-06 | 株式会社フジキン | 制御器及び気化供給装置 |
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JP2000133644A (ja) * | 1998-10-28 | 2000-05-12 | Mitsubishi Electric Corp | 半導体装置の製造装置 |
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JP5652960B2 (ja) * | 2011-08-01 | 2015-01-14 | 株式会社フジキン | 原料気化供給装置 |
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JP5837869B2 (ja) | 2012-12-06 | 2015-12-24 | 株式会社フジキン | 原料気化供給装置 |
JP5548292B1 (ja) * | 2013-05-30 | 2014-07-16 | 株式会社堀場エステック | 加熱気化システムおよび加熱気化方法 |
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- 2016-04-11 KR KR1020177017535A patent/KR101962659B1/ko active IP Right Grant
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JP7240770B2 (ja) | 2019-12-16 | 2023-03-16 | 株式会社フジキン | 気化供給方法及び気化供給装置 |
JPWO2021124723A1 (ja) * | 2019-12-16 | 2021-06-24 | ||
KR102641135B1 (ko) | 2019-12-16 | 2024-02-28 | 가부시키가이샤 후지킨 | 기화 공급 방법 및 기화 공급 장치 |
JP7457522B2 (ja) | 2020-02-20 | 2024-03-28 | 株式会社堀場エステック | 気化システム |
WO2022091713A1 (ja) * | 2020-10-31 | 2022-05-05 | 株式会社フジキン | ガス供給システムおよびガス供給方法 |
JPWO2022091713A1 (ja) * | 2020-10-31 | 2022-05-05 | ||
JP7316011B2 (ja) | 2020-10-31 | 2023-07-27 | 株式会社フジキン | ガス供給システムおよびガス供給方法 |
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CN107532298B (zh) | 2019-07-26 |
JP6578125B2 (ja) | 2019-09-18 |
WO2016174832A1 (ja) | 2016-11-03 |
US10646844B2 (en) | 2020-05-12 |
TWI632609B (zh) | 2018-08-11 |
KR20170088416A (ko) | 2017-08-01 |
US20180071702A1 (en) | 2018-03-15 |
KR101962659B1 (ko) | 2019-03-27 |
CN107532298A (zh) | 2018-01-02 |
TW201705279A (zh) | 2017-02-01 |
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