JP2016131245A - 多層基板 - Google Patents
多層基板 Download PDFInfo
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- JP2016131245A JP2016131245A JP2016004538A JP2016004538A JP2016131245A JP 2016131245 A JP2016131245 A JP 2016131245A JP 2016004538 A JP2016004538 A JP 2016004538A JP 2016004538 A JP2016004538 A JP 2016004538A JP 2016131245 A JP2016131245 A JP 2016131245A
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- semiconductor substrate
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Abstract
【解決手段】貫通電極4Aを有する第1半導体基板3Aと、貫通電極4Bを有する第2半導体基板3Bとが積層されている多層基板1Aであって、多層基板1Aの平面視において貫通電極4A、4Bが対向する位置に導電粒子11が選択的に配置されている。対向する第1半導体基板3Aの貫通電極4Aと第2半導体基板3Bの貫通電極4Bが導電粒子11により接続され、第1半導体基板3Aと第2半導体基板3Bが絶縁接着剤12により接着している。
【選択図】図1
Description
多層基板の平面視において、貫通電極が対向する位置に導電粒子が選択的に存在し、
対向する貫通電極が導電粒子により接続され、該貫通電極が形成されている半導体基板同士が絶縁接着剤により接着している接続構造を有する多層基板を提供する。
第1半導体基板の貫通電極と第2半導体基板の貫通電極が対向し、それらの間に選択的に配置された導電粒子により接続され、
第1半導体基板と第2半導体基板が絶縁接着剤により接着している接続構造を有する態様を提供する。
該導電粒子ユニットにおいて、任意の導電粒子と、該導電粒子に最近接している導電粒子との距離が導電粒子径の0.2〜0.5倍である異方導電性フィルムを提供する。
図1は、本発明の一実施態様の多層基板1Aの断面図である。
この多層基板1Aは、配線基板2に3層の半導体基板3A、3B、3Cが積層されたものであり、各半導体基板3A、3B、3Cは、IC等の半導体部品が形成された半導体ウエハである。配線基板2には貫通電極4Xが形成され、各半導体基板3A、3B、3Cには貫通電極4A、4B、4Cが形成されている。そして、配線基板2の表面で貫通電極4Xが露出する部分や、貫通電極4A、4B、4Cが半導体基板の表面に露出する部分には、それぞれ電極パッドが形成されている。なお、本発明において半導体基板3A、3B、3Cとしては、半導体チップを使用してもよい。また、本発明において、多層基板を構成する半導体基板の積層数に特に制限はない。
多層基板1Aは、後述するように多層基板を構成する各層を、導電粒子が特定の配置を有する本発明の異方導電性フィルムを用いて接続することにより製造される。異方導電性フィルムにおける導電粒子11の粒子径の大きさは、通常、貫通電極4A、4Bの対向面の径よりも小さいが、多層基板1Aでは、導電粒子11が当初の形状から潰れていることにより粒子径の大きさは、貫通電極4A、4Bの対向面の径と同程度となってもよい。これは、潰れた導電粒子11が貫通電極4A、4Bの対向面内に収まっていてもよく、外周部の少なくとも一部が、貫通電極4A、4Bの対向面からはみ出た状態でもよいことを意味する。なお、導電粒子11の構成素材にもよるが、導電粒子11は、多層基板1Aにおいても粒子形状を維持している場合がある。
ここで、多層基板1Aを構成する配線基板2としては、FR4等のガラスエポキシ基板等を使用することができる。配線基板2として、ICチップもしくはIC形成用のシリコンウェーハーを用いてもよい。配線基板2は、多層基板1Aの用途等に応じて適宜選択される。
配線基板2の電極部分には、必要に応じてハンダボール5が設けられる。
半導体基板3A、3B、3Cとしては、貫通電極4A、4B、4Cを有するものであれば特に制限は無く、例えば、シリコン等一般的半導体材料を使用することができる。
本発明の多層基板には、必要に応じて種々の部品を搭載することができる。
例えば図2に示す多層基板1Bは、各層の貫通電極4X、4A、4B、4Cが直線状に繋がった接続構造を有し、最外層には貫通電極4Cに接続した放熱用のヒートシンク6を有する。したがって、多層基板1Bは、配線基板2や半導体基板3A、3B、3Cに形成されたIC等の電子部品等から放出される熱をヒートシンク6により効率的に放熱することが可能となる。
本発明の多層基板の製造方法としては、例えば、図2の多層基板1Bの場合、まず、図3Aに示すように、貫通電極4Xを有する配線基板2と貫通電極4Aを有する半導体基板3Aとの間に、接続すべき貫通電極4X、4Aの配置に対応して導電粒子11が絶縁接着剤層12に選択的に配置された本発明の異方導電性フィルム10Aを挟み、異方導電性フィルム10Aを加熱加圧することにより配線基板2と第1半導体基板3Aを異方導電性接続し、図3Bに示す2層の接続構造体を得る。より具体的には、配線基板2と異方導電性フィルム10Aを、接続すべき貫通電極4Xと導電粒子11の配置が合うように位置合わせして重ね、さらに第1半導体基板3Aも同様に位置合わせして重ね合わせ、加熱加圧してこれらを異方導電性接続する。
本発明の多層基板の製造方法に使用する本発明の異方導電性フィルムは、接続すべき貫通電極の配置に対応して導電粒子11が絶縁接着剤層12に選択的に配置され、好ましくは導電粒子11によりアライメントマークが形成されたものである。アライメントマークとしては、導電粒子の配置により形成したものが好ましい。これにより、アライメントマークを明確に検出することができ、かつ異方導電性フィルムにアライメントマークをつけるための新たな工程の追加が不要となる。一方、アライメントマークは、レーザー照射などで絶縁接着剤層12を部分的に硬化させることにより形成してもよい。これによりアライメントマークを付する位置の変更が容易となる。
異方導電性フィルム10A、10Bを形成する導電粒子としては、公知の異方導電性フィルムに用いられているものの中から適宜選択することができる。例えば、ハンダ、ニッケル、コバルト、銀、銅、金、パラジウムなどの金属粒子、金属被覆樹脂粒子などが挙げられる。金属被覆樹脂粒子の金属被覆は、無電解メッキ法、スパッタリング法等の公知の金属膜形成方法を利用して形成することができる。金属被覆は、コア樹脂材の表面に形成されていれば特に制限はない。コア樹脂材は、樹脂のみから形成してもよく、導通信頼性の向上のために導電微粒子を含有させたものとしてもよい。
絶縁接着剤層12としては、公知の異方導電性フィルムで使用される絶縁性樹脂層を適宜採用することができる。例えば、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合型樹脂層、アクリレート化合物と熱ラジカル重合開始剤とを含む熱ラジカル重合型樹脂層、エポキシ化合物と熱カチオン重合開始剤とを含む熱カチオン重合型樹脂層、エポキシ化合物と熱アニオン重合開始剤とを含む熱アニオン重合型樹脂層等を使用することができる。また、これらの樹脂層は、必要に応じて、それぞれ重合したものとすることができる。また、絶縁接着剤層12を、複数の樹脂層から形成してもよい。
絶縁性フィラーの大きさは、異方導電性接続を阻害しない大きさであることが望ましい。
本発明の多層基板は種々の態様をとることができる。
例えば、図4に示す多層基板1Cは、図1に示した多層基板1Aにおいて、配線基板2の貫通電極4Xと第1半導体基板3Aの貫通電極4Aとを接続する異方導電性フィルムと、第1半導体基板3Aの貫通電極4Aと第2半導体基板3Bの貫通電極4Bとを接続する異方導電性フィルムと、第2半導体基板3Bの貫通電極4Bと第3半導体基板3Cの貫通電極4Cとを接続する異方導電性フィルムとして、共通する異方導電性フィルムを使用することにより製造したものである。即ち、異方導電性フィルムとして、製造しようとする多層基板1Cの平面視において、配線基板2又は各半導体基板3A、3B、3Cの貫通電極同士が対向する位置に対応して導電粒子11が絶縁接着剤層12に選択的に配置されたものが使用される。これにより、多層基板1Cの平面視において、貫通電極4X、4A、4B、4Cが対向する位置に導電粒子11、11xが存在することになる。言い換えると、対向する貫通電極の間には、必ずしも該貫通電極のみに対して選択的に配置された導電粒子が存在するわけではない。例えば、半導体基板3Aと半導体基板3Bとの間には、これらに形成されている貫通電極4A、4Bが対向する位置に導電粒子11が選択的に配置されている他、半導体基板3Aの貫通電極4Aと半導体基板の貫通電極4Bとの接続には寄与しない導電粒子11xも存在する。よって、半導体基板3Aと半導体基板3Bとの間に存在する全導電粒子に対し、半導体基板3Aと半導体基板3Bとの間で貫通電極に捕捉されない導電粒子が5%を超えて存在し得る。しかし、半導体基板3Aと半導体基板3Bの間にあってこれらの接続に寄与していない導電粒子11xは、配線基板2の貫通電極4Xと第1半導体基板3Aの貫通電極4Aとの接続に寄与している。また、多層基板1Cの平面視において、貫通電極同士が対向しない位置には、導電粒子は配置されていない、あるいは実質的に存在していない。即ち、図4に示す多層基板1Cにおいて、多層基板のフィルム厚方向の任意の断面の各半導体基板間には、全ての貫通電極と垂直方向に重なる位置に導電粒子が存在している状態が好ましい。
図5Aに示す多層基板1Dは、図1に示した多層基板1Aにおいて、対向する貫通電極4X、4A、4B、4Cが、それぞれ2個以上の導電粒子11により接続されているものである。図5Bは、この接続に使用する異方導電性フィルム10Dにおける導電粒子11の配置を示す平面図である。
各半導体基板を、共通する異方導電性フィルムを用いて接続することにより多層基板の製造に要するトータルコストを削減する場合に、導電粒子ユニット11uが一面に配置されている異方導電性フィルムを使用して多層基板を製造してもよい。この場合、各導電粒子ユニット11uを構成する導電粒子数は3個以上、好ましくは12個以上、より好ましくは20個以上であり、各導電粒子ユニット内で導電粒子が一列ではなく、面状に配置されているものとする。導電粒子ユニット11u同士の間隔は、ショートの発生を回避するため、導電粒子径の1倍以上とし、半導体基板の電極間隔に応じて適宜定める。導電粒子ユニットの径もしくは最長辺の長さの、電極の径もしくは最長辺の長さに対する割合は、小さすぎると電極における導電粒子の捕捉性が劣り、大きすぎるとショートの発生が懸念されることから、下限が好ましくは0.3倍以上、より好ましくは0.5倍以上、さらに好ましくは0.7倍以上であり、上限が好ましくは3倍以下、より好ましくは2倍以下である。また、導電粒子ユニットの径もしくは最長辺の長さが、電極の径もしくは最長辺の長さの等倍未満であれば電極内に導電粒子ユニットが収まることになるため、導電粒子の挟待の状態は良好になり易く、等倍以上であれば導電粒子と電極の位置あわせにおけるマージンが広くなるので多層基板の製造時間の短縮を図ることができる。
実施例1〜3、比較例1
(1)半導体基板
多層基板を構成する半導体基板3として、外形が7mm□、厚み200μmの矩形で、図6に示すように、クロム製電極パッドを有する貫通電極4がペリフェラル配置(φ30μm、85μmピッチ、280ピン)に形成されているものを用意した。半導体基板には、アライメントマークとして200μm□の四角形マークが形成されている。
表1に示すように、所定の粒子径の導電粒子(微粉半田粉、三井金属鉱業(株))を、絶縁接着剤層にランダムに配置するか(比較例1、粒子密度17.1個/mm2)、又は半導体基板の電極配置に対応させて配置した(実施例1〜3、85μmピッチ、280箇所)異方導電性フィルムを製造した。
(1)で用意した半導体基板を、(2)で製造した異方導電性フィルムを用いて表1に示した積層数で重ね合わせ、加熱加圧(180℃、40MPa、20秒)することにより多層基板を製造した。
得られた多層基板について、(a)導通抵抗、(b)導通信頼性、(c)ショート発生
率、を次のように評価した。これらの結果を表1に示す。
多層基板の表裏の電極間の導通抵抗を、デジタルマルチメータ(34401A、アジレント・テクノロジー(株))を使用し、4端子法にて、電流1mAを流して測定した。測定された抵抗値が5Ω以下をOKとし、5Ωを超えるものをNGとした。
多層基板を温度85℃、湿度85%RHの恒温槽に500時間おいた後の導通抵抗を、(a)と同様に測定し、その導通抵抗が10Ω以下をOKとし、10Ωを超えるものをNGとした。
積層した半導体基板を一枚ずつ剥離し、隣り合う電極が導電粒子でショートしているか否かを観察し、ショートが無い場合をOK、1つでもあるとNGとした。
実施例4〜7では、実施例1において、導電粒子として表2に示す平均粒子径の金/ニッケル被覆樹脂粒子(ミクロパール、積水化学工業(株))を使用し、電極あたりの導電粒子の個数と、電極に対する導電粒子の配置と、導電粒子間の最近接距離を表2に示すように変更し、導電粒子の配列によりアライメントマークを形成することなく導電粒子と電極とを直接位置合わせしてフィルムを貼り合わせた以外は、実施例1の操作を繰り返すことにより異方導電性フィルムを製造し、異方導電性フィルムを用いた多層基板を製造し、多層基板を評価した。その結果、実施例4〜7のいずれにおいても導通抵抗、導通信頼性、及びショート発生率が良好であった。なお、実施例5、7、9では、アライメントマークに対応する導電粒子の配列がなくても、電極の外周部にも導電粒子を存在させたため、フィルムの貼り合せ工程で位置ずれの許容範囲を広くすることができた。
実施例1において、導電粒子を平均粒子径10μmのニッケル被覆樹脂粒子(ミクロパール、積水化学工業(株))とし、導電粒子の配置を、導電粒子間距離10μmの4方格子(導電粒子の個数密度:2500個/mm2)とする以外は実施例1と同様の操作を繰り返すことにより異方導電性フィルムを製造し、異方導電性フィルムを用いた多層基板を製造し、多層基板を評価した。その結果、いずれの実施例も導通抵抗、導通信頼性、及びショート発生率が良好であった。
実施例1において、導電粒子を平均粒子径4μmのニッケル被覆樹脂粒子(ミクロパールAUL704、積水化学工業(株))とし、導電粒子の配置を、導電粒子間距離4μmの4方格子(導電粒子の個数密度:16000個/mm2)とする以外は実施例1と同様の操作を繰り返すことにより異方導電性フィルムを製造し、異方導電性フィルムを用いた多層基板を製造し、多層基板を評価した。その結果、いずれの実施例も導通抵抗、導通信頼性、及びショート発生率が良好であった。
2 配線基板
3、3A、3B、3C 半導体基板
4、4A、4B、4C、4x 貫通電極
5 ハンダボール
6 ヒートシンク
10A、10B、10D 異方導電性フィルム
11、11x 導電粒子
11u 導電粒子ユニット
12 絶縁接着剤又は絶縁接着剤層
L 導電粒子間の距離
Claims (12)
- 貫通電極を有する半導体基板が積層されている多層基板であって、
多層基板の平面視において、貫通電極が対向する位置に導電粒子が選択的に存在し、
対向する貫通電極が導電粒子により接続され、該貫通電極が形成されている半導体基板同士が絶縁接着剤により接着している接続構造を有する多層基板。 - 貫通電極を有する第1半導体基板と、貫通電極を有する第2半導体基板とが積層されている多層基板であって、
第1半導体基板の貫通電極と第2半導体基板の貫通電極が、それらの間に選択的に配置された導電粒子により接続されている接続構造を有する請求項1記載の多層基板。 - 貫通電極を有する第3半導体基板が第2半導体基板に積層されており、
第1半導体基板の貫通電極と接続している第2半導体基板の貫通電極と第3半導体基板の貫通電極とが対向し、それらの間に選択的に配置された導電粒子により接続され、
第2半導体基板と第3半導体基板が絶縁接着剤により接着している接続構造を有する請求項2記載の多層基板。 - 第1半導体基板と第2半導体基板の間で、対向する貫通電極に捕捉されていない導電粒子の数が第1半導体基板と第2半導体基板の間に存在する導電粒子の総数の5%以下である請求項1〜3のいずれかに記載の多層基板。
- 多層基板の最外層にヒートシンクを有し、ヒートシンクと、導電粒子で接続されることにより多層基板の積層方向に繋がった貫通電極とが接続している請求項1〜4のいずれかに記載の多層基板。
- 半導体基板に形成された貫通電極同士を対向させて接合する多層基板の製造方法であって、貫通電極が対向する部分の多層基板の平面視における位置に対応して導電粒子が絶縁接着剤層に選択的に配置された異方導電性フィルムを、貫通電極を有する半導体基板同士の間に挟み、該異方導電性フィルムを加熱加圧することによりこれら半導体基板を異方導電性接続する多層基板の製造方法。
- 貫通電極を有する第1半導体基板と、貫通電極を有する第2半導体基板を、それらの貫通電極同士を対向させて接合する多層基板の製造方法であって、第1半導体基板と第2半導体基板との間に、貫通電極の配置に対応して導電粒子が絶縁接着剤層に選択的に配置された異方導電性フィルムを挟み、該異方導電性フィルムを加熱加圧することにより第1半導体基板と第2半導体基板を異方導電性接続する請求項6記載の多層基板の製造方法。
- 貫通電極を有する第3半導体基板を第2半導体基板に積層し、第1半導体基板の貫通電極と異方導電性接続した第2半導体基板の貫通電極と、第3半導体基板の貫通電極との間に、貫通電極の配置に対応して導電粒子が絶縁接着剤層に選択的に配置された異方導電性フィルムを挟み、該異方導電性フィルムを加熱加圧することにより第2半導体基板と第3半導体基板を異方導電性接続する請求項6又は7記載の多層基板の製造方法。
- 絶縁接着剤層と、該絶縁接着剤層に配置された導電粒子を含む異方導電性フィルムであって、異方導電性フィルムで接続する貫通電極の配置に対応して導電粒子が絶縁接着剤層に選択的に配置されている異方導電性フィルム。
- 絶縁接着剤層と、該絶縁接着剤層に配置された導電粒子を含む異方導電性フィルムであって、3個以上の導電粒子が近接している導電粒子ユニットが形成されており、
該導電粒子ユニットにおいて、任意の導電粒子と、該導電粒子に最近接している導電粒子との距離が導電粒子径の0.2〜0.5倍である異方導電性フィルム。 - 導電粒子ユニットが、異方導電性フィルムで接続する貫通電極の配置に対応して配置されている請求項10記載の異方導電性フィルム。
- 導電粒子が、金属被覆樹脂粒子である請求項9〜11のいずれかに記載の異方導電性フィルム。
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