JP2016046273A - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 151
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 150
- 239000004065 semiconductor Substances 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 76
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 54
- 238000001312 dry etching Methods 0.000 claims abstract description 37
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 24
- 238000001039 wet etching Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 62
- 239000010936 titanium Substances 0.000 claims description 61
- 238000005530 etching Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 17
- 229920005591 polysilicon Polymers 0.000 abstract description 17
- 230000006866 deterioration Effects 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 138
- 239000012535 impurity Substances 0.000 description 21
- 229910021334 nickel silicide Inorganic materials 0.000 description 15
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 15
- 239000000356 contaminant Substances 0.000 description 9
- 210000000746 body region Anatomy 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
まず、この発明にかかる実施の形態の炭化珪素半導体装置の製造方法によって製造する炭化珪素半導体装置(SiC半導体デバイス)を実現する、縦型MOSFETの構成について説明する。図1は、この発明にかかる実施の形態の炭化珪素半導体装置の製造方法によって製造する縦型MOSFETの構成を示す説明図である。図1においては、この発明にかかる実施の形態の炭化珪素半導体装置の製造方法によって製造した炭化珪素半導体装置の最終的な形態として、縦型MOSFETの断面を模式的に示している。
つぎに、この発明にかかる実施の形態の炭化珪素半導体装置の製造方法について説明する。図2、図3、図4および図5は、この発明にかかる実施の形態の炭化珪素半導体装置の製造方法によって製造する縦型MOSFET100の一部を示す説明図である。
101 n+型SiC基板
102 n-型SiCエピタキシャル層
103 pチャネル層
104 n+ソース層
105 p+コンタクト層
106 ゲート酸化膜
107 ドープトポリシリコン膜
108 層間絶縁膜
109 コンタクト
110 コンタクト孔
111 Ti膜
112 TiN膜
113 ニッケルシリサイド層
114、114a 金属膜(表面電極)
114、114b 金属膜(裏面電極)
115 エピタキシャル基板
Claims (7)
- 炭化珪素からなる半導体基板のおもて面側に、ゲート酸化膜を形成する工程と、
前記ゲート酸化膜のおもて面側にゲート電極を形成する工程と、
前記ゲート電極のおもて面側、および、前記ゲート酸化膜のうち当該ゲート電極に覆われずに露出する部分に絶縁膜を形成する工程と、
前記絶縁膜を開口し前記半導体基板に到達するコンタクト孔を設ける工程と、
前記半導体基板のおもて面側全体にチタンを用いて形成されるチタン膜を成膜する工程と、
前記チタン膜のおもて面側に、金属および水分を遮蔽する遮蔽膜を成膜する工程と、
前記コンタクト孔底面の前記遮蔽膜をドライエッチングにより除去する工程と、
前記コンタクト孔底面の前記チタン膜をウェットエッチングにより除去する工程と、
前記半導体基板のおもて面側全体、および、前記半導体基板の裏面側全体に、ニッケルによって形成されるニッケル膜を成膜する工程と、
前記ニッケル膜が成膜された前記半導体基板全体を加熱する工程と、
を含んだことを特徴とする炭化珪素半導体装置の製造方法。 - 前記遮蔽膜は、窒化チタンを用いて形成されていることを特徴とする、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記チタン膜の厚さは、50nm〜150nmであることを特徴とする、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記遮蔽膜の厚さは、150nm〜1μmであることを特徴とする、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記遮蔽膜をドライエッチングにより除去する工程は、終点検出によりドライエッチングを停止することを特徴とする、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記遮蔽膜をドライエッチングにより除去する工程は、所定のエッチング時間の間、ドライエッチングをおこなうことを特徴とする、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記チタン膜をウェットエッチングにより除去する工程は、アンモニア水と過酸化水素水の混合液を用いることを特徴とする、請求項1に記載の炭化珪素半導体装置の製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106152728A (zh) * | 2016-07-08 | 2016-11-23 | 韦睿轩 | 一种气瓶干燥加热装置 |
JP2019083293A (ja) * | 2017-10-31 | 2019-05-30 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2019197854A (ja) * | 2018-05-11 | 2019-11-14 | 株式会社東芝 | 半導体装置 |
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2014
- 2014-08-19 JP JP2014166912A patent/JP6347442B2/ja active Active
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