JP2015532541A - 複数のオプトエレクトロニクス半導体素子を製造するための方法 - Google Patents
複数のオプトエレクトロニクス半導体素子を製造するための方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 136
- 239000011248 coating agent Substances 0.000 claims abstract description 89
- 238000000576 coating method Methods 0.000 claims abstract description 89
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 238000000926 separation method Methods 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000004033 plastic Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- -1 BaSO 4 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 206010041235 Snoring Diseases 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
・ 補助支持体を準備するステップと、
・ 導電性の第1コンタクト要素およびコンタクト要素からなる複数の配置構成体を補助支持体上に載置するステップと、
・ 各配置構成体の第2コンタクト要素上に1つずつのオプトエレクトロニクス半導体チップを載置するステップと、
・ オプトエレクトロニクス半導体チップを各配置構成体の第1コンタクト要素に導電的に接続するステップと、
・ 第1コンタクト要素および第2コンタクト要素を被覆材料によって被覆するステップと、
・ 複数のオプトエレクトロニクス半導体素子に個別化するステップとを有しており、ただし、
・ 上記の被覆材料は、各第1コンタクト要素の、補助支持体側を向いた下側面と面一に終端しており、
・ 被覆材料は、各第2コンタクト要素の、補助支持体側を向いた下側面と面一に終端している。
Claims (11)
- 複数のオプトエレクトロニクス半導体素子を製造するための方法において、
該方法は、
・ 補助支持体(1)を準備するステップと、
・ 導電性の第1コンタクト要素(21)および第2コンタクト要素(22)からなる複数の配置構成体(20)を前記補助支持体(1)上に載置するステップと、
・ 各前記配置構成体(20)の前記第2コンタクト要素(22)上に1つずつのオプトエレクトロニクス半導体チップ(3)を載置するステップと、
・ 前記オプトエレクトロニクス半導体チップ(3)を各前記配置構成体(20)の前記第1コンタクト要素(21)に導電的に接続するステップと、
・ 前記第1コンタクト要素(21)および前記第2コンタクト要素(22)を被覆材料(4)によって被覆するステップと、
・ 複数のオプトエレクトロニクス半導体素子に個別化するステップとを有しており、
・ 前記被覆材料(4)は、各前記第1コンタクト要素(21)の、前記補助支持体(1)側を向いた下側面(21b)と面一に終端しており、
・ 前記被覆材料(4)は、各前記第2コンタクト要素(22)の、前記補助支持体(1)側を向いた下側面(22b)と面一に終端している、
ことを特徴とする方法。 - 請求項1に記載の方法において、
前記個別化されたオプトエレクトロニクス半導体素子(10)のすべての側面(10c)には、前記導電性の第1コンタクト要素(21)および前記第2コンタクト要素(22)が存在しない、
ことを特徴とする方法。 - 請求項1または2に記載の方法において、
前記被覆材料(4)で被覆する前に複数の分離フレーム(6)を前記補助支持体(1)に固定し、
・ 各前記分離フレーム(6)は、導電性の第1コンタクト要素(21)および第2コンタクト要素(22)からなる少なくとも1つの配置構成体(20)を少なくとも部分的に側方から包囲し、
・ 前記個別化されたオプトエレクトロニクス半導体素子(10)の前記側面(10c)は部分的に前記分離フレーム(6)の部分によって構成されている、
ことを特徴とする方法。 - 請求項1から3までのいずれか1項に記載の方法において、
前記被覆材料(4)により、各オプトエレクトロニクス半導体チップ(3)の側面(3c)を少なくとも部分的に被覆する、
ことを特徴とする方法。 - 請求項1から4までのいずれか1項に記載の方法において、
前記補助支持体は金属によって構成されており、
前記第1コンタクト要素(21)および前記第2コンタクト要素(22)を前記補助支持体上で成長させる、
ことを特徴とする方法。 - 請求項1から5までのいずれか1項に記載の方法において、
前記第1コンタクト要素(21)および前記第2コンタクト要素(22)はアンダーカット部(23)を有する、
ことを特徴とする方法。 - 請求項1から6までのいずれか1項に記載の方法において、
前記被覆材料(4)は反射特性を有するように形成されており、
少なくとも各オプトエレクトロニクス半導体チップ(3)の、前記第2コンタクト要素(22)とは反対側を向いた上側面(3a)には前記被覆材料(4)がない、
ことを特徴とする方法。 - 請求項1から7までのいずれか1項に記載の方法において、
前記被覆材料(4)は白色の外観である、
ことを特徴とする方法。 - 請求項1から8までのいずれか1項に記載の方法において、
前記被覆材料(4)によって被覆した後、前記オプトエレクトロニクス半導体チップ(3)の、前記補助支持体(1)とは反対側を向いた前記上側面(3a)に、および/または、前記被覆材料(4)の、前記補助支持体(1)とは反対側を向いた前記上側面(4a)に、変換材料(5)を載置する、
ことを特徴とする方法。 - 請求項1から9までのいずれか1項に記載の方法において、
前記被覆材料(4)および/または前記変換材料(5)により、前記分離フレーム(6)の、前記補助支持体(1)とは反対側を向いた上側面(6a)を覆う、
ことを特徴とする方法。 - 請求項1から10までのいずれか1項に記載の方法において、
前記変換材料(5)に部分的に凹部(7)に切り込みを形成し、
当該凹部(7)は、前記変換材料(5)の、前記被覆材料(4)とは反対側を向いた上側面(5a)から、前記被覆材料(4)まで、または前記被覆材料(4)内に入って延在しており、
前記凹部(7)に被覆材料(4)を充填する、
ことを特徴とする方法。
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PCT/EP2013/071428 WO2014060355A2 (de) | 2012-10-17 | 2013-10-14 | Verfahren zur herstellung einer vielzahl von optoelektronischen halbleiterbauteilen |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017098498A (ja) * | 2015-11-27 | 2017-06-01 | ローム株式会社 | Led発光装置 |
JP2017139456A (ja) * | 2016-01-29 | 2017-08-10 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2018190861A (ja) * | 2017-05-09 | 2018-11-29 | ローム株式会社 | 光学装置 |
JP2020010022A (ja) * | 2018-07-02 | 2020-01-16 | ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングDr. Johannes Heidenhain Gesellschaft Mit Beschrankter Haftung | 位置測定装置のセンサーユニット用の光源を製作する方法及び位置測定装置 |
JP2020502779A (ja) * | 2017-03-28 | 2020-01-23 | 山東晶泰星光電科技有限公司Shandong Prosperous Star Optoelectronics Co.,Ltd. | Qfn表面実装型rgb−ledパッケージモジュール及びその製造方法 |
JP2021503184A (ja) * | 2018-08-24 | 2021-02-04 | ケーティー・アンド・ジー・コーポレーション | 発光素子及びそれを含むエアロゾル生成装置 |
JP2021192422A (ja) * | 2020-04-02 | 2021-12-16 | 日亜化学工業株式会社 | 面状光源及びその製造方法 |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012109905B4 (de) * | 2012-10-17 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen |
DE102014105734A1 (de) * | 2014-04-23 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102014113844B4 (de) | 2014-09-24 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
JP6459354B2 (ja) | 2014-09-30 | 2019-01-30 | 日亜化学工業株式会社 | 透光部材及びその製造方法ならびに発光装置及びその製造方法 |
DE102014114914A1 (de) * | 2014-10-14 | 2016-04-14 | Osram Opto Semiconductors Gmbh | Herstellung eines optoelektronischen Bauelements |
DE102014116529A1 (de) * | 2014-11-12 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
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DE102015114579B4 (de) * | 2015-09-01 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip |
DE102016103059A1 (de) * | 2016-02-22 | 2017-08-24 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
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WO2019025009A1 (en) * | 2017-08-04 | 2019-02-07 | Osram Opto Semiconductors Gmbh | PROCESS FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICE |
DE102017122030A1 (de) * | 2017-09-22 | 2019-03-28 | Osram Opto Semiconductors Gmbh | Sensor und Verwendung eines Sensors |
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DE102019104325A1 (de) * | 2019-02-20 | 2020-08-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für optoelektronische Halbleiterbauteile |
US11562947B2 (en) * | 2020-07-06 | 2023-01-24 | Panjit International Inc. | Semiconductor package having a conductive pad with an anchor flange |
DE102021103369A1 (de) * | 2021-02-12 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleitervorrichtung und verfahren zu dessen herstellung |
DE102022133000A1 (de) * | 2022-12-12 | 2024-06-13 | Ams-Osram International Gmbh | Verfahren zum herstellen elektronischer bauelemente |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001118865A (ja) * | 1999-10-19 | 2001-04-27 | Japan Rec Co Ltd | 光電子部品の製造方法 |
JP2002043625A (ja) * | 2000-07-19 | 2002-02-08 | Koha Co Ltd | Led装置 |
JP2007165688A (ja) * | 2005-12-15 | 2007-06-28 | Sharp Corp | 半導体発光装置 |
JP2008124153A (ja) * | 2006-11-09 | 2008-05-29 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2009506556A (ja) * | 2005-08-30 | 2009-02-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 表面実装可能なオプトエレクトロニクス素子及び表面実装可能なオプトエレクトロニクス素子の製造方法 |
JP2010239105A (ja) * | 2008-09-09 | 2010-10-21 | Nichia Corp | 光半導体装置及びその製造方法 |
JP2011181655A (ja) * | 2010-03-01 | 2011-09-15 | Nichia Corp | 発光装置及びその製造方法 |
DE102010023815A1 (de) * | 2010-06-15 | 2011-12-15 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements |
JP2011258677A (ja) * | 2010-06-08 | 2011-12-22 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2012523108A (ja) * | 2009-04-02 | 2012-09-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス部品 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6599768B1 (en) * | 2002-08-20 | 2003-07-29 | United Epitaxy Co., Ltd. | Surface mounting method for high power light emitting diode |
DE10245946C1 (de) | 2002-09-30 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Lichtquellenmoduls |
JP2005079329A (ja) | 2003-08-29 | 2005-03-24 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
JP5305594B2 (ja) * | 2004-02-20 | 2013-10-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電素子、多数の光電素子を有する装置および光電素子を製造する方法 |
KR100638868B1 (ko) * | 2005-06-20 | 2006-10-27 | 삼성전기주식회사 | 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법 |
JP4903179B2 (ja) | 2007-04-23 | 2012-03-28 | サムソン エルイーディー カンパニーリミテッド. | 発光装置及びその製造方法 |
DE102008024704A1 (de) | 2008-04-17 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils |
DE102009036621B4 (de) | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
KR101047778B1 (ko) * | 2010-04-01 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
DE102010024079A1 (de) | 2010-06-17 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102010025319B4 (de) | 2010-06-28 | 2022-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente |
CN102082217A (zh) * | 2010-12-09 | 2011-06-01 | 深圳市凯信光电有限公司 | 一种发光二极管 |
DE102011113483B4 (de) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
US9735198B2 (en) * | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
DE102012109905B4 (de) * | 2012-10-17 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen |
-
2012
- 2012-10-17 DE DE102012109905.7A patent/DE102012109905B4/de active Active
-
2013
- 2013-10-14 KR KR1020157012602A patent/KR102100253B1/ko active IP Right Grant
- 2013-10-14 JP JP2015537209A patent/JP6161709B2/ja active Active
- 2013-10-14 CN CN201380054427.3A patent/CN104737307B/zh active Active
- 2013-10-14 WO PCT/EP2013/071428 patent/WO2014060355A2/de active Application Filing
- 2013-10-14 US US14/436,578 patent/US9318357B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001118865A (ja) * | 1999-10-19 | 2001-04-27 | Japan Rec Co Ltd | 光電子部品の製造方法 |
JP2002043625A (ja) * | 2000-07-19 | 2002-02-08 | Koha Co Ltd | Led装置 |
JP2009506556A (ja) * | 2005-08-30 | 2009-02-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 表面実装可能なオプトエレクトロニクス素子及び表面実装可能なオプトエレクトロニクス素子の製造方法 |
JP2007165688A (ja) * | 2005-12-15 | 2007-06-28 | Sharp Corp | 半導体発光装置 |
JP2008124153A (ja) * | 2006-11-09 | 2008-05-29 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2010239105A (ja) * | 2008-09-09 | 2010-10-21 | Nichia Corp | 光半導体装置及びその製造方法 |
JP2012523108A (ja) * | 2009-04-02 | 2012-09-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス部品 |
JP2011181655A (ja) * | 2010-03-01 | 2011-09-15 | Nichia Corp | 発光装置及びその製造方法 |
JP2011258677A (ja) * | 2010-06-08 | 2011-12-22 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
DE102010023815A1 (de) * | 2010-06-15 | 2011-12-15 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017098498A (ja) * | 2015-11-27 | 2017-06-01 | ローム株式会社 | Led発光装置 |
JP2017139456A (ja) * | 2016-01-29 | 2017-08-10 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP7177326B2 (ja) | 2016-01-29 | 2022-11-24 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2020502779A (ja) * | 2017-03-28 | 2020-01-23 | 山東晶泰星光電科技有限公司Shandong Prosperous Star Optoelectronics Co.,Ltd. | Qfn表面実装型rgb−ledパッケージモジュール及びその製造方法 |
JP7102675B2 (ja) | 2017-05-09 | 2022-07-20 | ローム株式会社 | 光学装置 |
JP2018190861A (ja) * | 2017-05-09 | 2018-11-29 | ローム株式会社 | 光学装置 |
JP2020010022A (ja) * | 2018-07-02 | 2020-01-16 | ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングDr. Johannes Heidenhain Gesellschaft Mit Beschrankter Haftung | 位置測定装置のセンサーユニット用の光源を製作する方法及び位置測定装置 |
JP7328798B2 (ja) | 2018-07-02 | 2023-08-17 | ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 位置測定装置のセンサーユニット用の光源を製作する方法及び位置測定装置 |
US11304449B2 (en) | 2018-08-24 | 2022-04-19 | Kt&G Corporation | Light-emitting element and aerosol generation device comprising same |
JP2021503184A (ja) * | 2018-08-24 | 2021-02-04 | ケーティー・アンド・ジー・コーポレーション | 発光素子及びそれを含むエアロゾル生成装置 |
JP7226904B2 (ja) | 2018-08-24 | 2023-02-21 | ケーティー アンド ジー コーポレイション | 発光素子及びそれを含むエアロゾル生成装置 |
JP2021192422A (ja) * | 2020-04-02 | 2021-12-16 | 日亜化学工業株式会社 | 面状光源及びその製造方法 |
JP7244771B2 (ja) | 2020-04-02 | 2023-03-23 | 日亜化学工業株式会社 | 面状光源の製造方法 |
JP7460937B2 (ja) | 2020-04-02 | 2024-04-03 | 日亜化学工業株式会社 | 面状光源及びその製造方法 |
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US9318357B2 (en) | 2016-04-19 |
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DE102012109905B4 (de) | 2021-11-11 |
KR20150067368A (ko) | 2015-06-17 |
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