WO2014060355A3 - Verfahren zur herstellung einer vielzahl von optoelektronischen halbleiterbauteilen - Google Patents

Verfahren zur herstellung einer vielzahl von optoelektronischen halbleiterbauteilen Download PDF

Info

Publication number
WO2014060355A3
WO2014060355A3 PCT/EP2013/071428 EP2013071428W WO2014060355A3 WO 2014060355 A3 WO2014060355 A3 WO 2014060355A3 EP 2013071428 W EP2013071428 W EP 2013071428W WO 2014060355 A3 WO2014060355 A3 WO 2014060355A3
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic semiconductor
multiplicity
contact elements
semiconductor components
auxiliary carrier
Prior art date
Application number
PCT/EP2013/071428
Other languages
English (en)
French (fr)
Other versions
WO2014060355A2 (de
Inventor
Martin Brandl
Markus Boss
Markus Pindl
Simon Jerebic
Herbert Brunner
Tobias Gebuhr
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to US14/436,578 priority Critical patent/US9318357B2/en
Priority to CN201380054427.3A priority patent/CN104737307B/zh
Priority to KR1020157012602A priority patent/KR102100253B1/ko
Priority to JP2015537209A priority patent/JP6161709B2/ja
Publication of WO2014060355A2 publication Critical patent/WO2014060355A2/de
Publication of WO2014060355A3 publication Critical patent/WO2014060355A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)

Abstract

Es wird ein Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen mit den folgenden Schritten angegeben: • - Bereitstellen eines Hilfsträgers (1), • - Aufbringen einer Vielzahl von Anordnungen (20) von elektrisch leitenden ersten Kontaktelementen (21) und zweiten Kontaktelementen (22) auf dem Hilfsträger (1), • - Aufbringen jeweils eines optoelektronischen Halbleiterchips (3) auf dem zweiten Kontaktelement (22) jeder Anordnung (20), • - elektrisch leitendes Verbinden der optoelektronischen Halbleiterchips (3) mit den ersten Kontaktelementen (21) der jeweiligen Anordnung (20), • - Umhüllen der ersten Kontaktelemente (21) und der zweiten Kontaktelemente (22) mit einem Umhüllungsmaterial (4), und • - Vereinzeln in eine Vielzahl von optoelektronischen Halbleiterbauteilen, wobei • - das Umhüllungsmaterial (4) bündig mit der dem Hilfsträger (1) zugewandten Unterseite (21b) eines jeden ersten Kontaktelements (21) abschließt, und • - das Umhüllungsmaterial (4) bündig mit der dem Hilfsträger (1) zugewandten Unterseite (22b) eines jeden zweiten Kontaktelements (22) abschließt.
PCT/EP2013/071428 2012-10-17 2013-10-14 Verfahren zur herstellung einer vielzahl von optoelektronischen halbleiterbauteilen WO2014060355A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/436,578 US9318357B2 (en) 2012-10-17 2013-10-14 Method for producing a multiplicity of optoelectronic semiconductor components
CN201380054427.3A CN104737307B (zh) 2012-10-17 2013-10-14 用于制造多个光电子半导体构件的方法
KR1020157012602A KR102100253B1 (ko) 2012-10-17 2013-10-14 다수의 광전자 반도체 소자의 제조 방법
JP2015537209A JP6161709B2 (ja) 2012-10-17 2013-10-14 複数のオプトエレクトロニクス半導体素子を製造するための方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012109905.7A DE102012109905B4 (de) 2012-10-17 2012-10-17 Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen
DE102012109905.7 2012-10-17

Publications (2)

Publication Number Publication Date
WO2014060355A2 WO2014060355A2 (de) 2014-04-24
WO2014060355A3 true WO2014060355A3 (de) 2014-06-26

Family

ID=49328540

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/071428 WO2014060355A2 (de) 2012-10-17 2013-10-14 Verfahren zur herstellung einer vielzahl von optoelektronischen halbleiterbauteilen

Country Status (6)

Country Link
US (1) US9318357B2 (de)
JP (1) JP6161709B2 (de)
KR (1) KR102100253B1 (de)
CN (1) CN104737307B (de)
DE (1) DE102012109905B4 (de)
WO (1) WO2014060355A2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012109905B4 (de) * 2012-10-17 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen
DE102014105734A1 (de) * 2014-04-23 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102014113844B4 (de) 2014-09-24 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
JP6459354B2 (ja) * 2014-09-30 2019-01-30 日亜化学工業株式会社 透光部材及びその製造方法ならびに発光装置及びその製造方法
DE102014114914A1 (de) * 2014-10-14 2016-04-14 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
DE102014116529A1 (de) * 2014-11-12 2016-05-12 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102014119390A1 (de) * 2014-12-22 2016-06-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
WO2016192452A1 (zh) * 2015-05-29 2016-12-08 广州市鸿利光电股份有限公司 Csp led的封装方法和csp led
DE102015109953A1 (de) * 2015-06-22 2016-12-22 Osram Opto Semiconductors Gmbh Herstellung elektronischer Bauelemente
DE102015114579B4 (de) * 2015-09-01 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
JP6831624B2 (ja) * 2015-11-27 2021-02-17 ローム株式会社 Ｌｅｄ発光装置
JP7177326B2 (ja) * 2016-01-29 2022-11-24 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102016118996A1 (de) * 2016-10-06 2018-04-12 Osram Opto Semiconductors Gmbh Herstellung von sensoren
DE102016121510A1 (de) 2016-11-10 2018-05-17 Osram Opto Semiconductors Gmbh Leiterrahmen, optoelektronisches Bauelement mit einem Leiterrahmen und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017105017A1 (de) 2017-03-09 2018-09-13 Osram Opto Semiconductors Gmbh Herstellung von strahlungsemittierenden bauelementen
CN106847800A (zh) * 2017-03-28 2017-06-13 山东晶泰星光电科技有限公司 Qfn表面贴装式rgb‑led封装模组及其制造方法
JP7102675B2 (ja) * 2017-05-09 2022-07-20 ローム株式会社 光学装置
WO2019007513A1 (en) * 2017-07-06 2019-01-10 Osram Opto Semiconductors Gmbh PROCESS FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND AN OPTOELECTRONIC COMPONENT
CN111279496A (zh) * 2017-08-04 2020-06-12 欧司朗光电半导体有限公司 用于制造光电子半导体器件的方法
DE102017122030A1 (de) 2017-09-22 2019-03-28 Osram Opto Semiconductors Gmbh Sensor und Verwendung eines Sensors
DE102018112332A1 (de) * 2018-05-23 2019-11-28 Osram Opto Semiconductors Gmbh Bauteil und verfahren zur herstellung eines bauteils
EP3591345B1 (de) * 2018-07-02 2020-11-11 Dr. Johannes Heidenhain GmbH Verfahren zur herstellung einer lichtquelle für eine sensoreinheit einer positionsmesseinrichtung sowie eine positionsmesseinrichtung
KR102094402B1 (ko) * 2018-08-24 2020-03-27 주식회사 케이티앤지 발광 소자 및 이를 포함하는 에어로졸 생성 장치
JP7244771B2 (ja) * 2020-04-02 2023-03-23 日亜化学工業株式会社 面状光源の製造方法
JP7460937B2 (ja) 2020-04-02 2024-04-03 日亜化学工業株式会社 面状光源及びその製造方法
US11562947B2 (en) * 2020-07-06 2023-01-24 Panjit International Inc. Semiconductor package having a conductive pad with an anchor flange
DE102021103369A1 (de) * 2021-02-12 2022-08-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleitervorrichtung und verfahren zu dessen herstellung
DE102022133000A1 (de) * 2022-12-12 2024-06-13 Ams-Osram International Gmbh Verfahren zum herstellen elektronischer bauelemente

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007025515A1 (de) * 2005-08-30 2007-03-08 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches halbleiterbauelement und verfahren zu dessen herstellung
US20080290359A1 (en) * 2007-04-23 2008-11-27 Samsung Electro-Mechanics Co., Ltd. Light emitting device and manufacturing method of the same
DE102008024704A1 (de) * 2008-04-17 2009-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
EP2161765A2 (de) * 2008-09-09 2010-03-10 Nichia Corporation Optisches Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102009015963A1 (de) * 2009-04-02 2010-10-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2011181655A (ja) * 2010-03-01 2011-09-15 Nichia Corp 発光装置及びその製造方法
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3291278B2 (ja) * 1999-10-19 2002-06-10 サンユレック株式会社 光電子部品の製造方法
JP2002043625A (ja) 2000-07-19 2002-02-08 Koha Co Ltd Ｌｅｄ装置
US6599768B1 (en) * 2002-08-20 2003-07-29 United Epitaxy Co., Ltd. Surface mounting method for high power light emitting diode
DE10245946C1 (de) * 2002-09-30 2003-10-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Lichtquellenmoduls
JP2005079329A (ja) 2003-08-29 2005-03-24 Stanley Electric Co Ltd 表面実装型発光ダイオード
TWI347022B (en) 2004-02-20 2011-08-11 Osram Opto Semiconductors Gmbh Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component
KR100638868B1 (ko) * 2005-06-20 2006-10-27 삼성전기주식회사 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법
JP2007165688A (ja) 2005-12-15 2007-06-28 Sharp Corp 半導体発光装置
JP4905069B2 (ja) * 2006-11-09 2012-03-28 豊田合成株式会社 発光装置及びその製造方法
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
KR101047778B1 (ko) * 2010-04-01 2011-07-07 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 라이트 유닛
JP5569158B2 (ja) * 2010-06-08 2014-08-13 日亜化学工業株式会社 発光装置及びその製造方法
DE102010024079A1 (de) 2010-06-17 2011-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102010025319B4 (de) 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
CN102082217A (zh) * 2010-12-09 2011-06-01 深圳市凯信光电有限公司 一种发光二极管
DE102011113483B4 (de) * 2011-09-13 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement
US9735198B2 (en) * 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
DE102012109905B4 (de) 2012-10-17 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007025515A1 (de) * 2005-08-30 2007-03-08 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches halbleiterbauelement und verfahren zu dessen herstellung
US20080290359A1 (en) * 2007-04-23 2008-11-27 Samsung Electro-Mechanics Co., Ltd. Light emitting device and manufacturing method of the same
DE102008024704A1 (de) * 2008-04-17 2009-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
EP2161765A2 (de) * 2008-09-09 2010-03-10 Nichia Corporation Optisches Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102009015963A1 (de) * 2009-04-02 2010-10-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2011181655A (ja) * 2010-03-01 2011-09-15 Nichia Corp 発光装置及びその製造方法
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements

Also Published As

Publication number Publication date
CN104737307B (zh) 2017-11-10
CN104737307A (zh) 2015-06-24
WO2014060355A2 (de) 2014-04-24
US20150255313A1 (en) 2015-09-10
DE102012109905B4 (de) 2021-11-11
DE102012109905A1 (de) 2014-04-17
KR102100253B1 (ko) 2020-04-13
JP6161709B2 (ja) 2017-07-12
JP2015532541A (ja) 2015-11-09
US9318357B2 (en) 2016-04-19
KR20150067368A (ko) 2015-06-17

Similar Documents

Publication Publication Date Title
WO2014060355A3 (de) Verfahren zur herstellung einer vielzahl von optoelektronischen halbleiterbauteilen
TW200741997A (en) Stacked package structure and method for manufacturing the same
EP2779237A3 (de) Chipanordnung und Verfahren zur Herstellung einer Chipanordnung
WO2011088384A3 (en) Solder pillars in flip chip assembly and manufacturing method thereof
GB201020062D0 (en) Multi-chip package
WO2012048137A3 (en) Flexible circuits and methods for making the same
TW200721399A (en) Semiconductor device, stacked semiconductor device, and manufacturing method for semiconductor device
WO2014112954A8 (en) Substrate for semiconductor packaging and method of forming same
TW200705519A (en) Semiconductor package without chip carrier and fabrication method thereof
TW200802767A (en) A flip-chip package structure with stiffener
WO2012140050A3 (de) Verfahren zur herstellung eines licht emittierenden halbleiterbauelements und licht emittierendes halbleiterbauelement
EP3483932A3 (de) Auf masse gelegtes via clustering zur übersprechverminderung
WO2011160051A3 (en) Nanowire led structure and method for manufacturing the same
TW200644187A (en) Semiconductor device and method for manufacturing semiconductor device
TW200629503A (en) Chip-stacked semiconductor package and fabrication method thereof
TW200743189A (en) Multiple chip package and method for fabricating the same
PH12014000026A1 (en) Semiconductor component and method of manufacture
EP2360744A3 (de) Leuchtdiode und Verfahren zu deren Herstellung
WO2012037191A3 (en) Improved photovoltaic cell assembly and method
EP2363895A3 (de) Lichtemittierende Vorrichtung, Verfahren zu deren Herstellung und Verpackung für lichtemittierende Vorrichtung
WO2011084053A3 (en) Solar panel module and method for manufacturing such a solar panel module
WO2014025722A3 (en) Method and system for gallium nitride electronic devices using engineered substrates
WO2012065041A3 (en) Rfid devices and methods for manufacturing
WO2013130580A8 (en) Semiconductor laser chip package with encapsulated recess molded on substrate and method for forming same
TW200723495A (en) Chip package structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13774698

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2015537209

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 14436578

Country of ref document: US

ENP Entry into the national phase

Ref document number: 20157012602

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 13774698

Country of ref document: EP

Kind code of ref document: A2