JP2015173158A - ワイドバンドギャップ半導体装置 - Google Patents
ワイドバンドギャップ半導体装置 Download PDFInfo
- Publication number
- JP2015173158A JP2015173158A JP2014047806A JP2014047806A JP2015173158A JP 2015173158 A JP2015173158 A JP 2015173158A JP 2014047806 A JP2014047806 A JP 2014047806A JP 2014047806 A JP2014047806 A JP 2014047806A JP 2015173158 A JP2015173158 A JP 2015173158A
- Authority
- JP
- Japan
- Prior art keywords
- region
- band gap
- wide band
- main surface
- gap semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 120
- 239000012535 impurity Substances 0.000 claims abstract description 72
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 239000013078 crystal Substances 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
以下、図面に基づいて本発明の実施の形態を説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付し、その説明は繰返さない。
(実施の形態1)
まず、本発明の実施の形態1に係るワイドバンドギャップ半導体装置であるJBSの構造について、図1〜図10を参照して説明する。
実施の形態1に係るJBS1によれば、断面視において、第1の主面10aと平行な方向に沿った第2領域6の幅の最大値W2,W3,W4は、第1領域5とショットキー電極50との境界部5a1の幅W1よりも大きい。これにより、高い耐圧を有し、かつ電気抵抗の小さいJBS1を得ることができる。また立ち上がり電圧および順方向電圧降下の増加を抑制することができる。
次に、本発明の実施の形態2に係るワイドバンドギャップ半導体装置であるJBSの構造について、図15および図16を参照して説明する。
実施の形態2に係るJBS1によれば、第2領域6は、複数の第2領域部6aを含み、ワイドバンドギャップ半導体層10は、複数の第2領域部6aの間に設けられ、第1導電型を有し、かつn型ドリフト領域14の不純物濃度よりも高い不純物濃度を有するn型領域8をさらに含む。これにより、第3不純物領域8によって、p型領域7からn型ドリフト領域14に延びる空乏層を制限し、電気抵抗の増加を抑制することができる。
5 第1領域
5a,5b 第1領域部
5a1 境界部
6 第2領域
6a 第2領域部
6a1 第1の表面部分
6a2 第2の表面部分
7 p型領域(第2不純物領域)
8 n型領域(第3不純物領域)
8a n型領域部
10 ワイドバンドギャップ半導体層
10a 第1の主面
10b 第2の主面
11 単結晶基板
12 ワイドバンドギャップ半導体基板
14 n型ドリフト領域(第1不純物領域)
14a 第1のn型領域
14b 第2のn型領域
20 絶縁層
30 オーミック電極
40 下部配線
50 ショットキー電極
60 上部配線
H1,H2 高さ
W1,W2,W3,W4 幅
x 第1の方向
y 第2の方向
Claims (10)
- 第1の主面と、前記第1の主面と反対側の第2の主面とを有するワイドバンドギャップ半導体層と、
前記ワイドバンドギャップ半導体層の前記第1の主面に接するショットキー電極とを備え、
前記ワイドバンドギャップ半導体層は、前記第1の主面において前記ショットキー電極と接し、前記第2の主面に接し、かつ第1導電型を有する第1不純物領域と、前記第1の主面において前記ショットキー電極と接し、前記第1不純物領域と接し、かつ前記第1導電型とは異なる第2導電型を有する第2不純物領域とを含み、
前記第2不純物領域は、前記第1の主面において前記ショットキー電極と接する第1領域と、前記第1領域と連接し、かつ前記第1領域の前記第2の主面側に設けられた第2領域とを有し、
断面視において、前記第1の主面と平行な方向に沿った前記第2領域の幅の最大値は、前記第1領域と前記ショットキー電極との境界部の幅よりも大きい、ワイドバンドギャップ半導体装置。 - 前記第2領域は、前記第1の主面と対向する第1の表面部分と、前記第1の表面部分と反対側であって、かつ前記第2の主面と対向する第2の表面部分とを有し、
前記第1領域は、前記第2領域の前記第1の表面部分の一部から前記第1の主面に伸長するように設けられている、請求項1に記載のワイドバンドギャップ半導体装置。 - 平面視において、前記境界部の面積は、前記第2領域の前記第2の表面部分の面積よりも小さい、請求項2に記載のワイドバンドギャップ半導体装置。
- 前記第1領域の不純物濃度は、前記第2領域の不純物濃度よりも大きい、請求項1〜請求項3のいずれか1項に記載のワイドバンドギャップ半導体装置。
- 平面視において、前記第1領域は、アイランド形状を有する、請求項1〜請求項4のいずれか1項に記載のワイドバンドギャップ半導体装置。
- 平面視において、前記第2領域は、ストライプ形状を有する、請求項1〜請求項5のいずれか1項に記載のワイドバンドギャップ半導体装置。
- 前記第1領域は、複数の第1領域部を有し、
平面視において、前記複数の第1領域部は、前記第1の主面と平行な第1の方向と、前記第1の主面と平行な方向であって、かつ前記第1の方向に対して垂直な第2の方向との双方に沿って設けられている、請求項1〜請求項6のいずれか1項に記載のワイドバンドギャップ半導体装置。 - 前記ワイドバンドギャップ半導体層は、炭化珪素を含む、請求項1〜請求項7のいずれか1項に記載のワイドバンドギャップ半導体装置。
- 前記第2領域は、複数の第2領域部を含み、
前記ワイドバンドギャップ半導体層は、前記複数の第2領域部の間に設けられ、前記第1導電型を有し、かつ前記第1不純物領域の不純物濃度よりも高い不純物濃度を有する第3不純物領域をさらに含む、請求項1〜請求項8のいずれか1項に記載のワイドバンドギャップ半導体装置。 - 前記第3不純物領域は、前記複数の第2領域部の各々から離間している、請求項9に記載のワイドバンドギャップ半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014047806A JP6287377B2 (ja) | 2014-03-11 | 2014-03-11 | ワイドバンドギャップ半導体装置 |
US14/617,111 US9385244B2 (en) | 2014-03-11 | 2015-02-09 | Wide bandgap semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014047806A JP6287377B2 (ja) | 2014-03-11 | 2014-03-11 | ワイドバンドギャップ半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015173158A true JP2015173158A (ja) | 2015-10-01 |
JP6287377B2 JP6287377B2 (ja) | 2018-03-07 |
Family
ID=54069864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014047806A Active JP6287377B2 (ja) | 2014-03-11 | 2014-03-11 | ワイドバンドギャップ半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9385244B2 (ja) |
JP (1) | JP6287377B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019525457A (ja) * | 2016-06-30 | 2019-09-05 | ゼネラル・エレクトリック・カンパニイ | 電荷平衡jbsダイオードのための活性領域設計 |
JP2020533810A (ja) * | 2017-09-15 | 2020-11-19 | アスカトロン アーベー | グリッドを製造するための方法 |
US11581431B2 (en) | 2017-09-15 | 2023-02-14 | Ii-Vi Delaware, Inc. | Integration of a Schottky diode with a MOSFET |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9842836B2 (en) * | 2015-04-14 | 2017-12-12 | Rohm Co., Ltd. | Diode |
US10141456B2 (en) * | 2016-10-17 | 2018-11-27 | Fraunhofer Gesellschaft Zur Forderung Der Angew. Forschung E.V. | Schottky diode and method for its manufacturing |
CN109742136A (zh) * | 2018-12-30 | 2019-05-10 | 芜湖启迪半导体有限公司 | 一种肖特基二极管结构及其制造方法 |
CN109994539A (zh) * | 2019-03-29 | 2019-07-09 | 华中科技大学 | 一种碳化硅结势垒肖特基二极管及其制备方法 |
CN110350024A (zh) * | 2019-06-21 | 2019-10-18 | 泰科天润半导体科技(北京)有限公司 | 一种降低正向压降的肖特基二极管及制备方法 |
CN113035963A (zh) * | 2021-02-03 | 2021-06-25 | 厦门市三安集成电路有限公司 | 碳化硅外延片、碳化硅二极管器件及其制备方法 |
CN116344592B (zh) * | 2023-05-29 | 2023-08-08 | 通威微电子有限公司 | 一种二极管器件及其制作方法 |
CN116454138B (zh) * | 2023-06-15 | 2023-09-08 | 西安电子科技大学 | 一种柱状p沟道的碳化硅浮动结二极管及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10233515A (ja) * | 1996-12-19 | 1998-09-02 | Toshiba Corp | ショットキーバリア半導体装置とその製造方法 |
JP2002083976A (ja) * | 2000-06-21 | 2002-03-22 | Fuji Electric Co Ltd | 半導体装置 |
JP2002314099A (ja) * | 2001-04-09 | 2002-10-25 | Denso Corp | ショットキーダイオード及びその製造方法 |
JP2010040857A (ja) * | 2008-08-06 | 2010-02-18 | Toshiba Corp | 半導体装置 |
JP2012142590A (ja) * | 2005-12-27 | 2012-07-26 | Qspeed Semiconductor Inc | 超高速リカバリダイオード |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5935183A (ja) | 1982-08-23 | 1984-02-25 | 株式会社東芝 | 高速増殖炉 |
JP2009140963A (ja) | 2007-12-03 | 2009-06-25 | Panasonic Corp | ショットキーバリアダイオードおよびその製造方法 |
US8124981B2 (en) * | 2008-06-10 | 2012-02-28 | Fairchild Semiconductor Corporation | Rugged semiconductor device architecture |
-
2014
- 2014-03-11 JP JP2014047806A patent/JP6287377B2/ja active Active
-
2015
- 2015-02-09 US US14/617,111 patent/US9385244B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10233515A (ja) * | 1996-12-19 | 1998-09-02 | Toshiba Corp | ショットキーバリア半導体装置とその製造方法 |
JP2002083976A (ja) * | 2000-06-21 | 2002-03-22 | Fuji Electric Co Ltd | 半導体装置 |
JP2002314099A (ja) * | 2001-04-09 | 2002-10-25 | Denso Corp | ショットキーダイオード及びその製造方法 |
JP2012142590A (ja) * | 2005-12-27 | 2012-07-26 | Qspeed Semiconductor Inc | 超高速リカバリダイオード |
JP2010040857A (ja) * | 2008-08-06 | 2010-02-18 | Toshiba Corp | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019525457A (ja) * | 2016-06-30 | 2019-09-05 | ゼネラル・エレクトリック・カンパニイ | 電荷平衡jbsダイオードのための活性領域設計 |
JP7206029B2 (ja) | 2016-06-30 | 2023-01-17 | ゼネラル・エレクトリック・カンパニイ | 電荷平衡jbsダイオードのための活性領域設計 |
JP2020533810A (ja) * | 2017-09-15 | 2020-11-19 | アスカトロン アーベー | グリッドを製造するための方法 |
US11581431B2 (en) | 2017-09-15 | 2023-02-14 | Ii-Vi Delaware, Inc. | Integration of a Schottky diode with a MOSFET |
JP7295866B2 (ja) | 2017-09-15 | 2023-06-21 | アスカトロン アーベー | グリッドを製造するための方法 |
US11876116B2 (en) | 2017-09-15 | 2024-01-16 | Ii-Vi Delaware, Inc. | Method for manufacturing a grid |
US11984497B2 (en) | 2017-09-15 | 2024-05-14 | Ii-Vi Advanced Materials, Llc | Integration of a Schottky diode with a MOSFET |
Also Published As
Publication number | Publication date |
---|---|
JP6287377B2 (ja) | 2018-03-07 |
US9385244B2 (en) | 2016-07-05 |
US20150263180A1 (en) | 2015-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6287377B2 (ja) | ワイドバンドギャップ半導体装置 | |
KR102116388B1 (ko) | 쇼트키 다이오드 | |
JP5774205B2 (ja) | 半導体装置 | |
JP5408929B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US20090160008A1 (en) | Semiconductor device and method of manufacturing the same | |
US20080296587A1 (en) | Silicon carbide semiconductor device having junction barrier schottky diode | |
WO2014038282A1 (ja) | ワイドギャップ半導体装置およびその製造方法 | |
JP2016502763A (ja) | ショットキーダイオード及びショットキーダイオードの製造方法 | |
JP2008172008A (ja) | SiCショットキー障壁半導体装置 | |
WO2014038281A1 (ja) | ワイドギャップ半導体装置およびその製造方法 | |
JP6103839B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2014078660A (ja) | ワイドギャップ半導体装置およびその製造方法 | |
JP2015076592A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2012186318A (ja) | 高耐圧半導体装置 | |
JP5401356B2 (ja) | 半導体装置の製造方法 | |
JP5999678B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6012743B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
WO2017187856A1 (ja) | 半導体装置 | |
JP6028676B2 (ja) | 炭化珪素半導体装置 | |
US10529867B1 (en) | Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capability | |
JP5377548B2 (ja) | 半導体整流装置 | |
JP2014241345A (ja) | 炭化珪素半導体装置の製造方法 | |
JP5872327B2 (ja) | 半導体整流素子 | |
JP2013074148A (ja) | 半導体装置およびその製造方法 | |
JP2015002315A (ja) | 炭化珪素半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161026 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170623 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170704 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170828 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180122 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6287377 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |