JP2015147231A - 保持テーブル - Google Patents
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- JP2015147231A JP2015147231A JP2014020641A JP2014020641A JP2015147231A JP 2015147231 A JP2015147231 A JP 2015147231A JP 2014020641 A JP2014020641 A JP 2014020641A JP 2014020641 A JP2014020641 A JP 2014020641A JP 2015147231 A JP2015147231 A JP 2015147231A
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- 238000012545 processing Methods 0.000 claims description 78
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- 238000000034 method Methods 0.000 claims description 24
- 238000003672 processing method Methods 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims 1
- 230000002787 reinforcement Effects 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 173
- 238000005520 cutting process Methods 0.000 description 31
- 238000003384 imaging method Methods 0.000 description 19
- 238000002679 ablation Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Jigs For Machine Tools (AREA)
Abstract
【解決手段】 複数のデバイスが形成されたデバイス領域(83)とデバイス領域を囲繞する外周余剰領域(84)とが表面に形成され、外周余剰領域に対応する裏面にリング状補強部(85)が形成されたウェーハ(W)を保持する保持テーブル(5)を、保持テーブルの上面に、リング状補強部とデバイス領域との境界部(86)に対応する位置にレーザー光線を逃がすための環状の逃げ溝(53)が形成され、逃げ溝の溝底(54)にはテーパ形状でレーザー光線が散乱する微細な凹凸が形成される構成にした。
【選択図】図5
Description
2 レーザー光線照射手段
3 撮像手段
4 保持テーブル移動機構
5 保持テーブル
51 保持面
52 外周縁部
53 逃げ溝
54 溝底
55 逃げ溝の内側面
56 逃げ溝の外側面
80 ウェーハの表面
81 ウェーハの裏面
82 分割予定ライン
83 デバイス領域
84 外周余剰領域
85 リング状補強部
86 境界部
87 リング状補強部の上面
88 リング状補強部の内周面
89 リング状補強部の外周面
90 外周エッジ
91 スポット径
92 レーザー加工溝
F1、F2 フレーム
T1、T2 保持テープ
W ウェーハ
Claims (4)
- 複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とが表面に形成されたウェーハについて、該ウェーハの裏面のうち該デバイス領域の裏側を研削して該外周余剰領域の裏側に形成されたリング状補強部を除去するウェーハの加工方法であって、
ウェーハを収容する開口部を有するフレームの該開口部にウェーハを収容し該ウェーハの表面及び該フレームに保持テープを貼着し、該保持テープを介して該ウェーハを該フレームに支持させるウェーハ貼着工程と、
該フレームに支持されたウェーハを保持テーブルに保持し、ウェーハに対して吸収性を有する波長のレーザー光線を照射することによって該リング状補強部と該デバイス領域との境界部を該保持テープとともに切断して該デバイス領域と該リング状補強部とを分離するリング状補強部分離工程と、
該保持テープを介して該フレームに支持されたリング状補強部を該フレームとともに該保持テーブルから離脱させて該リング状補強部を除去するリング状補強部除去工程と、
から構成されるウェーハの加工方法。 - 該リング状補強部分離工程においては、該リング状補強部と該デバイス領域との間の該境界部に、所定のスポット径を有するレーザー光線を照射するとともに該保持テーブルを回転させて該境界部を所定のスポット径で除去する第一の加工工程と、
該第一の加工工程を実施した後に、レーザー光線照射手段を該所定のスポット径よりも小さい距離だけウェーハの半径方向に移動し、該境界部に該レーザー光線を照射し該保持テーブルを回転させて事前に除去したレーザー加工溝内のデブリを除去しつつ該境界部を該所定のスポット径で除去する第二の加工工程と、を備え、
ウェーハ及び該保持テープがレーザー加工溝で貫通し該リング状補強部と該デバイス領域が分離するまで該第二の加工工程を繰り返すことを特徴とする請求項1記載のウェーハの加工方法。 - 該リング状補強部除去工程を実施した後に、保持テーブルに保持されたデバイス領域のみからなるウェーハを収容する開口部を有するフレームの該開口部に該デバイス領域のみからなるウェーハを収容し、該ウェーハの裏面及び該フレームに保持テープを貼着して該保持テープを介して該ウェーハを該フレームに支持するデバイス領域支持工程と、
該デバイス領域支持工程を実施した後に、該ウェーハを個々のデバイスに分割する分割工程とを備える、請求項1又は2に記載のウェーハの加工方法。 - 請求項1乃至3のいずれかに記載のウェーハの加工方法において使用する保持テーブルであって、
該保持テーブルの上面には、該リング状補強部とデバイス領域との境界部に対応する位置にレーザー光線を逃がすための環状の逃げ溝が形成されており、該逃げ溝の溝底にはテーパ形状で該レーザー光線が散乱する微細な凹凸が形成されていることを特徴とする、保持テーブル。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014020641A JP6317935B2 (ja) | 2014-02-05 | 2014-02-05 | 保持テーブル |
TW103145482A TWI637460B (zh) | 2014-02-05 | 2014-12-25 | 保持台 |
SG10201500647RA SG10201500647RA (en) | 2014-02-05 | 2015-01-27 | Holding table |
MYPI2015000210A MY181072A (en) | 2014-02-05 | 2015-01-27 | Holding table |
KR1020150012791A KR102175865B1 (ko) | 2014-02-05 | 2015-01-27 | 유지 테이블 |
DE102015201833.4A DE102015201833B4 (de) | 2014-02-05 | 2015-02-03 | Haltetisch und Verwendung des Haltetischs |
CN201510059595.2A CN104816100B (zh) | 2014-02-05 | 2015-02-04 | 保持工作台 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014020641A JP6317935B2 (ja) | 2014-02-05 | 2014-02-05 | 保持テーブル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015147231A true JP2015147231A (ja) | 2015-08-20 |
JP6317935B2 JP6317935B2 (ja) | 2018-04-25 |
Family
ID=53547291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014020641A Active JP6317935B2 (ja) | 2014-02-05 | 2014-02-05 | 保持テーブル |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP6317935B2 (ja) |
KR (1) | KR102175865B1 (ja) |
CN (1) | CN104816100B (ja) |
DE (1) | DE102015201833B4 (ja) |
MY (1) | MY181072A (ja) |
SG (1) | SG10201500647RA (ja) |
TW (1) | TWI637460B (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015213996A (ja) * | 2014-05-12 | 2015-12-03 | 株式会社ディスコ | チャックテーブル |
JP2017073438A (ja) * | 2015-10-06 | 2017-04-13 | 株式会社ディスコ | デバイスの製造方法 |
DE102017206400A1 (de) | 2016-04-18 | 2017-10-19 | Disco Corporation | Bearbeitungsverfahren für einen wafer |
CN108202183A (zh) * | 2016-12-20 | 2018-06-26 | 株式会社迪思科 | 被加工物的加工方法 |
EP3346503A1 (en) | 2017-01-10 | 2018-07-11 | Renesas Electronics Corporation | Semiconductor device manufacturing method and semiconductor wafer |
JP2019016691A (ja) * | 2017-07-06 | 2019-01-31 | リンテック株式会社 | 除去装置および除去方法 |
JP2019016693A (ja) * | 2017-07-06 | 2019-01-31 | リンテック株式会社 | 除去装置および除去方法 |
JP2019016692A (ja) * | 2017-07-06 | 2019-01-31 | リンテック株式会社 | 除去装置および除去方法 |
KR20210142982A (ko) * | 2020-05-19 | 2021-11-26 | 주식회사 에이엘티 | 타이코 웨이퍼 링 제거장치 및 타이코 웨이퍼 링 제거방법 |
DE102021211260A1 (de) | 2020-10-13 | 2022-04-14 | Disco Corporation | Bearbeitungsvorrichtung |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016110378B4 (de) | 2016-06-06 | 2023-10-26 | Infineon Technologies Ag | Entfernen eines Verstärkungsrings von einem Wafer |
DE102016111629B4 (de) * | 2016-06-24 | 2022-10-27 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleitervorrichtung |
CN112599413B (zh) * | 2021-03-04 | 2021-05-14 | 成都先进功率半导体股份有限公司 | 一种晶圆芯片切割方法 |
CN113275769B (zh) * | 2021-07-22 | 2021-09-21 | 南通智谷数控机械有限公司 | 一种智能控制清理毛边的海绵切割机 |
JP2023021607A (ja) * | 2021-08-02 | 2023-02-14 | 株式会社Screenホールディングス | 光照射装置、および、光照射方法 |
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JPS6049888A (ja) * | 1983-08-30 | 1985-03-19 | Dainippon Printing Co Ltd | レ−ザ−断裁装置 |
JPS61138489U (ja) * | 1985-02-19 | 1986-08-28 | ||
JP2008283025A (ja) * | 2007-05-11 | 2008-11-20 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2012023175A (ja) * | 2010-07-14 | 2012-02-02 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
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- 2015-01-27 KR KR1020150012791A patent/KR102175865B1/ko active IP Right Grant
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JP2015213996A (ja) * | 2014-05-12 | 2015-12-03 | 株式会社ディスコ | チャックテーブル |
JP2017073438A (ja) * | 2015-10-06 | 2017-04-13 | 株式会社ディスコ | デバイスの製造方法 |
US10211076B2 (en) | 2016-04-18 | 2019-02-19 | Disco Corporation | Wafer processing method |
DE102017206400A1 (de) | 2016-04-18 | 2017-10-19 | Disco Corporation | Bearbeitungsverfahren für einen wafer |
KR20170119297A (ko) | 2016-04-18 | 2017-10-26 | 가부시기가이샤 디스코 | 웨이퍼의 가공 방법 |
DE102017206400B4 (de) | 2016-04-18 | 2022-03-03 | Disco Corporation | Bearbeitungsverfahren für einen wafer |
CN108202183A (zh) * | 2016-12-20 | 2018-06-26 | 株式会社迪思科 | 被加工物的加工方法 |
EP3346503A1 (en) | 2017-01-10 | 2018-07-11 | Renesas Electronics Corporation | Semiconductor device manufacturing method and semiconductor wafer |
KR20180082334A (ko) | 2017-01-10 | 2018-07-18 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치의 제조 방법 및 반도체 웨이퍼 |
US10741504B2 (en) | 2017-01-10 | 2020-08-11 | Renesas Electronics Corporation | Semiconductor device manufacturing method and semiconductor wafer |
JP2019016693A (ja) * | 2017-07-06 | 2019-01-31 | リンテック株式会社 | 除去装置および除去方法 |
JP2019016692A (ja) * | 2017-07-06 | 2019-01-31 | リンテック株式会社 | 除去装置および除去方法 |
JP2019016691A (ja) * | 2017-07-06 | 2019-01-31 | リンテック株式会社 | 除去装置および除去方法 |
JP7045811B2 (ja) | 2017-07-06 | 2022-04-01 | リンテック株式会社 | 除去装置および除去方法 |
KR20210142982A (ko) * | 2020-05-19 | 2021-11-26 | 주식회사 에이엘티 | 타이코 웨이퍼 링 제거장치 및 타이코 웨이퍼 링 제거방법 |
KR102409260B1 (ko) | 2020-05-19 | 2022-06-17 | 주식회사 에이엘티 | 타이코 웨이퍼 링 제거장치 및 타이코 웨이퍼 링 제거방법 |
DE102021211260A1 (de) | 2020-10-13 | 2022-04-14 | Disco Corporation | Bearbeitungsvorrichtung |
US20220115250A1 (en) * | 2020-10-13 | 2022-04-14 | Disco Corporation | Processing apparatus |
KR20220048938A (ko) | 2020-10-13 | 2022-04-20 | 가부시기가이샤 디스코 | 레이저 가공 장치 |
Also Published As
Publication number | Publication date |
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JP6317935B2 (ja) | 2018-04-25 |
DE102015201833A1 (de) | 2015-08-06 |
KR102175865B1 (ko) | 2020-11-06 |
CN104816100A (zh) | 2015-08-05 |
SG10201500647RA (en) | 2015-09-29 |
TWI637460B (zh) | 2018-10-01 |
KR20150092705A (ko) | 2015-08-13 |
CN104816100B (zh) | 2019-09-06 |
MY181072A (en) | 2020-12-17 |
DE102015201833B4 (de) | 2020-10-29 |
TW201532182A (zh) | 2015-08-16 |
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