JP7512070B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
- Publication number
- JP7512070B2 JP7512070B2 JP2020074770A JP2020074770A JP7512070B2 JP 7512070 B2 JP7512070 B2 JP 7512070B2 JP 2020074770 A JP2020074770 A JP 2020074770A JP 2020074770 A JP2020074770 A JP 2020074770A JP 7512070 B2 JP7512070 B2 JP 7512070B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- modified layer
- ring
- grinding
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 238000003672 processing method Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims description 37
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 230000001681 protective effect Effects 0.000 claims description 19
- 238000003776 cleavage reaction Methods 0.000 claims description 13
- 230000007017 scission Effects 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
パルスレーザー光線の波長 :1342nm
繰り返し周波数 :60kHz
平均出力 :1.6W
チャックテーブルの回転速度:0.5回転/秒
2a:ウエーハの表面
2b:ウエーハの裏面
4:デバイス
6:分割予定ライン
8:デバイス領域
10:外周余剰領域
14:保護部材
24:改質層
38:劈開面
40:外周余剰領域のリング
58:ダイシングテープ
60:フレーム
60a:フレームの開口部
78:デバイスチップ
Claims (2)
- 複数のデバイスが分割予定ラインによって区画されたデバイス領域と、該デバイス領域を囲繞する外周余剰領域とが表面に形成されたウエーハの加工方法であって、
ウエーハの裏面側からウエーハに対して透過性を有する波長のレーザー光線の集光点を該外周余剰領域に対応するウエーハの内部に位置づけてレーザー光線をウエーハに照射しウエーハの仕上がり厚みに達しない位置にリング状の改質層を形成する改質層形成工程と、
該改質層形成工程の前または後にウエーハの表面に保護部材を配設する保護部材配設工程と、
ウエーハの裏面から改質層に対応する領域に切削ブレードを位置づけてウエーハを切削し改質層のすべてを除去すると共に劈開面をウエーハの表面に到達させる改質層除去工程と、
該劈開面を起点として該外周余剰領域のリングを除去するリング除去工程と、
該改質層除去工程および該リング除去工程の後にウエーハの仕上がり厚みに達するまでウエーハの裏面を研削する研削工程と、
を含むウエーハの加工方法。 - 該研削工程の後、ウエーハの裏面にダイシングテープを貼着すると共にウエーハを収容する開口部を有するフレームでダイシングテープの外周を支持し、ウエーハの表面から保護部材を除去する移し替え工程と、
ウエーハの分割予定ラインに加工を施してウエーハを個々のデバイスチップに分割する分割工程と、
を含む請求項1記載のウエーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020074770A JP7512070B2 (ja) | 2020-04-20 | 2020-04-20 | ウエーハの加工方法 |
KR1020210040573A KR20210129590A (ko) | 2020-04-20 | 2021-03-29 | 웨이퍼의 가공 방법 |
CN202110404069.0A CN113539787A (zh) | 2020-04-20 | 2021-04-15 | 晶片的加工方法 |
TW110113615A TW202141605A (zh) | 2020-04-20 | 2021-04-15 | 晶圓加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020074770A JP7512070B2 (ja) | 2020-04-20 | 2020-04-20 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021174801A JP2021174801A (ja) | 2021-11-01 |
JP7512070B2 true JP7512070B2 (ja) | 2024-07-08 |
Family
ID=78094561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020074770A Active JP7512070B2 (ja) | 2020-04-20 | 2020-04-20 | ウエーハの加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7512070B2 (ja) |
KR (1) | KR20210129590A (ja) |
CN (1) | CN113539787A (ja) |
TW (1) | TW202141605A (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012129404A (ja) | 2010-12-16 | 2012-07-05 | Disco Abrasive Syst Ltd | 分割方法 |
JP2013235917A (ja) | 2012-05-08 | 2013-11-21 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2015138951A (ja) | 2014-01-24 | 2015-07-30 | 株式会社ディスコ | ウェーハの加工方法 |
JP2016081990A (ja) | 2014-10-14 | 2016-05-16 | 株式会社ディスコ | ウエーハの分割方法 |
JP2018117037A (ja) | 2017-01-18 | 2018-07-26 | 株式会社ディスコ | 加工方法 |
WO2019176589A1 (ja) | 2018-03-14 | 2019-09-19 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法及びコンピュータ記憶媒体 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108532A (ja) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
-
2020
- 2020-04-20 JP JP2020074770A patent/JP7512070B2/ja active Active
-
2021
- 2021-03-29 KR KR1020210040573A patent/KR20210129590A/ko unknown
- 2021-04-15 TW TW110113615A patent/TW202141605A/zh unknown
- 2021-04-15 CN CN202110404069.0A patent/CN113539787A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012129404A (ja) | 2010-12-16 | 2012-07-05 | Disco Abrasive Syst Ltd | 分割方法 |
JP2013235917A (ja) | 2012-05-08 | 2013-11-21 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2015138951A (ja) | 2014-01-24 | 2015-07-30 | 株式会社ディスコ | ウェーハの加工方法 |
JP2016081990A (ja) | 2014-10-14 | 2016-05-16 | 株式会社ディスコ | ウエーハの分割方法 |
JP2018117037A (ja) | 2017-01-18 | 2018-07-26 | 株式会社ディスコ | 加工方法 |
WO2019176589A1 (ja) | 2018-03-14 | 2019-09-19 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法及びコンピュータ記憶媒体 |
Also Published As
Publication number | Publication date |
---|---|
JP2021174801A (ja) | 2021-11-01 |
TW202141605A (zh) | 2021-11-01 |
KR20210129590A (ko) | 2021-10-28 |
CN113539787A (zh) | 2021-10-22 |
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