JP2015084451A - 窓層及び光指向構造を含む半導体発光装置 - Google Patents
窓層及び光指向構造を含む半導体発光装置 Download PDFInfo
- Publication number
- JP2015084451A JP2015084451A JP2015003148A JP2015003148A JP2015084451A JP 2015084451 A JP2015084451 A JP 2015084451A JP 2015003148 A JP2015003148 A JP 2015003148A JP 2015003148 A JP2015003148 A JP 2015003148A JP 2015084451 A JP2015084451 A JP 2015084451A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type region
- light
- disposed
- bonding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 239000011368 organic material Substances 0.000 claims abstract description 11
- 239000004038 photonic crystal Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 31
- 239000000919 ceramic Substances 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- -1 ITO Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000005361 soda-lime glass Substances 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 126
- 235000012431 wafers Nutrition 0.000 description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Weting (AREA)
Abstract
Description
Claims (15)
- n型領域とp型領域との間に配される発光層を有する半導体構造と、
窓層と、
前記窓層に向かって光を指向する光指向構造と、
前記n型領域に電気的に接続されているn型コンタクト及び前記p型領域に電気的に接続されているp型コンタクトと、
を有する装置であって、前記半導体構造は、前記窓層と前記光指向構造との間に配されており、前記光指向構造は、前記n型領域の表面上に配されており、前記p型コンタクトは前記半導体構造内に形成される開口内に配されている、装置。 - 前記p型領域と前記窓層との間に配された少なくとも1つの透明なボンディング層を更に有する請求項1に記載の装置。
- 前記ボンディング層は、導電性のものであり、前記p型領域に直接的に接続されていると共に、透明な伝導性の酸化物、酸化インジウムスズ、酸化亜鉛及びルテニウム酸化物のうちの1つである、請求項2に記載の装置。
- 前記p型領域と前記窓層との間に配されている全ての層の組み合わせた厚さが、2μm未満である、請求項2に記載の装置。
- 前記p型コンタクトが、前記ボンディング層を露出させるように前記半導体構造を通してエッチングされた開口内の前記ボンディング層上に配されている、請求項2に記載の装置。
- 前記少なくとも1つの透明なボンディング層は、前記p型領域に直接的に接続されている透明な伝導性酸化物であり、当該装置は、前記少なくとも1つの透明なボンディング層と前記窓層との間に配されている付加的な透明なボンディング層を更に有する、請求項2に記載の装置。
- 前記付加的な透明なボンディング層内に配されている波長変換材料を更に有する請求項6に記載の装置。
- 前記付加的な透明なボンディング層と前記少なくとも1つの透明ボンディング層との間の界面が、光を散乱させる、請求項6に記載の装置。
- 前記付加的な透明なボンディング層は、透明な伝導性酸化物、非伝導性ガラス材料、誘電性材料、窒化ケイ素、ITO、ソーダ石灰ガラス、ホウケイ酸ガラス、有機材料、ベンゾシクロブテン、スピンオンガラス及びシリコーンのうちの1つである、請求項6に記載の装置。
- 前記窓層と前記p型領域との間のボンディングは、実質的に有機材料を有していない、請求項1に記載の装置。
- 前記窓層が、光学フィルタ、サファイア及びガラスのうちの1つである、請求項1に記載の装置。
- 前記窓層は、前記発光層によって発される光を吸収して異なる波長の光を発する波長変換材料を有している、請求項1に記載の装置。
- 前記波長変換材料は、セラミック層内に配されている、請求項12に記載の装置。
- 前記光指向構造は、前記n型領域の表面内に形成されるフォトニック結晶と多孔性半導体層とのうちの1つを有している、請求項1に記載の装置。
- 前記発光層がIII族窒化物層である、請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/178,902 US10147843B2 (en) | 2008-07-24 | 2008-07-24 | Semiconductor light emitting device including a window layer and a light-directing structure |
US12/178,902 | 2008-07-24 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011519263A Division JP2011529267A (ja) | 2008-07-24 | 2009-07-15 | 窓層及び光指向構造を含む半導体発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015084451A true JP2015084451A (ja) | 2015-04-30 |
Family
ID=41153263
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011519263A Pending JP2011529267A (ja) | 2008-07-24 | 2009-07-15 | 窓層及び光指向構造を含む半導体発光装置 |
JP2015003148A Pending JP2015084451A (ja) | 2008-07-24 | 2015-01-09 | 窓層及び光指向構造を含む半導体発光装置 |
JP2015191125A Active JP6074005B2 (ja) | 2008-07-24 | 2015-09-29 | 窓層及び光指向構造を含む半導体発光装置の製造方法 |
JP2017000636A Pending JP2017059858A (ja) | 2008-07-24 | 2017-01-05 | 窓層及び光指向構造を含む半導体発光装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011519263A Pending JP2011529267A (ja) | 2008-07-24 | 2009-07-15 | 窓層及び光指向構造を含む半導体発光装置 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015191125A Active JP6074005B2 (ja) | 2008-07-24 | 2015-09-29 | 窓層及び光指向構造を含む半導体発光装置の製造方法 |
JP2017000636A Pending JP2017059858A (ja) | 2008-07-24 | 2017-01-05 | 窓層及び光指向構造を含む半導体発光装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US10147843B2 (ja) |
EP (1) | EP2308107B1 (ja) |
JP (4) | JP2011529267A (ja) |
KR (1) | KR20110031999A (ja) |
CN (2) | CN102106004B (ja) |
TW (1) | TWI505501B (ja) |
WO (1) | WO2010010485A1 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
US20100279437A1 (en) * | 2009-05-01 | 2010-11-04 | Koninklijke Philips Electronics N.V. | Controlling edge emission in package-free led die |
US8633097B2 (en) * | 2009-06-09 | 2014-01-21 | International Business Machines Corporation | Single-junction photovoltaic cell |
US8703521B2 (en) * | 2009-06-09 | 2014-04-22 | International Business Machines Corporation | Multijunction photovoltaic cell fabrication |
CN102714263B (zh) * | 2010-02-25 | 2015-11-25 | 韩国莱太柘晶电株式会社 | 发光二极管及其制造方法 |
CN102823000B (zh) | 2010-04-08 | 2016-08-03 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
US8232117B2 (en) | 2010-04-30 | 2012-07-31 | Koninklijke Philips Electronics N.V. | LED wafer with laminated phosphor layer |
CN102918662B (zh) | 2010-05-31 | 2015-11-25 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
JP2012186414A (ja) * | 2011-03-08 | 2012-09-27 | Toshiba Corp | 発光装置 |
CN103748696B (zh) * | 2011-08-26 | 2018-06-22 | 亮锐控股有限公司 | 加工半导体结构的方法 |
WO2013050917A1 (en) | 2011-10-06 | 2013-04-11 | Koninklijke Philips Electronics N.V. | Surface treatment of a semiconductor light emitting device |
KR101939333B1 (ko) * | 2011-10-07 | 2019-01-16 | 서울바이오시스 주식회사 | 발광 다이오드 패키지 |
JP2016513882A (ja) * | 2013-03-13 | 2016-05-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 多孔質の反射性コンタクトを作製する方法及び装置 |
WO2015004577A1 (en) * | 2013-07-08 | 2015-01-15 | Koninklijke Philips N.V. | Wavelength converted semiconductor light emitting device |
JP6709159B2 (ja) * | 2014-01-07 | 2020-06-10 | ルミレッズ ホールディング ベーフェー | 蛍光変換体を有する接着剤のない発光デバイス |
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
DE102014110719A1 (de) * | 2014-07-29 | 2016-02-04 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements |
KR102282141B1 (ko) * | 2014-09-02 | 2021-07-28 | 삼성전자주식회사 | 반도체 발광소자 |
CN104681684A (zh) * | 2014-12-30 | 2015-06-03 | 深圳市华星光电技术有限公司 | 一种发光器件及发光器件封装 |
CN105023975B (zh) * | 2015-06-08 | 2017-10-27 | 严敏 | 一种红色倒装晶片的制造方法和红色倒装晶片 |
US10297581B2 (en) | 2015-07-07 | 2019-05-21 | Apple Inc. | Quantum dot integration schemes |
KR101733043B1 (ko) | 2015-09-24 | 2017-05-08 | 안상정 | 반도체 발광소자 및 이의 제조방법 |
JP6974324B2 (ja) | 2015-12-29 | 2021-12-01 | ルミレッズ ホールディング ベーフェー | 側面反射器と蛍光体とを備えるフリップチップled |
EP3398211B1 (en) | 2015-12-29 | 2020-07-29 | Lumileds Holding B.V. | Flip chip led with side reflectors and phosphor |
US11024611B1 (en) * | 2017-06-09 | 2021-06-01 | Goertek, Inc. | Micro-LED array transfer method, manufacturing method and display device |
JP2019102715A (ja) * | 2017-12-06 | 2019-06-24 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
US11404400B2 (en) | 2018-01-24 | 2022-08-02 | Apple Inc. | Micro LED based display panel |
DE112018007310T5 (de) * | 2018-03-21 | 2020-12-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung, die eine leuchtstoffplatte aufweist und verfahren zur herstellung der optoelektronischen vorrichtung |
CN108550666A (zh) * | 2018-05-02 | 2018-09-18 | 天津三安光电有限公司 | 倒装四元系发光二极管外延结构、倒装四元系发光二极管及其生长方法 |
US10804440B2 (en) | 2018-12-21 | 2020-10-13 | Lumileds Holding B.V. | Light extraction through adhesive layer between LED and converter |
CN111446337B (zh) | 2019-01-16 | 2021-08-10 | 隆达电子股份有限公司 | 发光二极管结构 |
GB202213149D0 (en) * | 2022-09-08 | 2022-10-26 | Poro Tech Ltd | Method of separating a semiconductor device from a substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007214225A (ja) * | 2006-02-08 | 2007-08-23 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
JP2007335879A (ja) * | 2006-06-09 | 2007-12-27 | Philips Lumileds Lightng Co Llc | 多孔質層を含む半導体発光デバイス |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JP2950106B2 (ja) | 1993-07-14 | 1999-09-20 | 松下電器産業株式会社 | 光素子実装体の製造方法 |
US6229160B1 (en) * | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
JP2001345484A (ja) | 2000-06-01 | 2001-12-14 | Seiwa Electric Mfg Co Ltd | 発光ダイオードチップ及び発光ダイオードランプ |
US20020017652A1 (en) | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
TW474034B (en) | 2000-11-07 | 2002-01-21 | United Epitaxy Co Ltd | LED and the manufacturing method thereof |
JP4639520B2 (ja) | 2001-04-27 | 2011-02-23 | パナソニック株式会社 | 窒化物半導体チップの製造方法 |
RU2207663C2 (ru) | 2001-07-17 | 2003-06-27 | Ооо Нпц Оэп "Оптэл" | Светодиод |
JP3874701B2 (ja) * | 2002-06-26 | 2007-01-31 | 株式会社東芝 | 半導体発光素子及び半導体発光装置 |
JP4174581B2 (ja) | 2002-10-23 | 2008-11-05 | 信越半導体株式会社 | 発光素子の製造方法 |
US7041529B2 (en) | 2002-10-23 | 2006-05-09 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method of fabricating the same |
JP2004319685A (ja) | 2003-04-15 | 2004-11-11 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
US20040211972A1 (en) * | 2003-04-22 | 2004-10-28 | Gelcore, Llc | Flip-chip light emitting diode |
US7268370B2 (en) * | 2003-06-05 | 2007-09-11 | Matsushita Electric Industrial Co., Ltd. | Phosphor, semiconductor light emitting device, and fabrication method thereof |
TWI330413B (en) | 2005-01-25 | 2010-09-11 | Epistar Corp | A light-emitting device |
TW200509408A (en) | 2003-08-20 | 2005-03-01 | Epistar Corp | Nitride light-emitting device with high light-emitting efficiency |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US7119372B2 (en) * | 2003-10-24 | 2006-10-10 | Gelcore, Llc | Flip-chip light emitting diode |
US7719017B2 (en) | 2004-01-07 | 2010-05-18 | Hamamatsu Photonics K.K. | Semiconductor light-emitting device and its manufacturing method |
JP4357311B2 (ja) | 2004-02-04 | 2009-11-04 | シチズン電子株式会社 | 発光ダイオードチップ |
TWI244221B (en) * | 2004-03-01 | 2005-11-21 | Epistar Corp | Micro-reflector containing flip-chip light emitting device |
WO2005093863A1 (en) | 2004-03-29 | 2005-10-06 | Showa Denko K.K | Compound semiconductor light-emitting device and production method thereof |
TWM255518U (en) | 2004-04-23 | 2005-01-11 | Super Nova Optoelectronics Cor | Vertical electrode structure of Gallium Nitride based LED |
JP4386789B2 (ja) | 2004-05-12 | 2009-12-16 | ローム株式会社 | 発光ダイオード素子の製造方法 |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
US7560294B2 (en) | 2004-06-07 | 2009-07-14 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making same |
JP4857596B2 (ja) | 2004-06-24 | 2012-01-18 | 豊田合成株式会社 | 発光素子の製造方法 |
US7553683B2 (en) * | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
TWM277111U (en) | 2004-06-18 | 2005-10-01 | Super Nova Optoelectronics Cor | Vertical electrode structure for white-light LED |
JP4726783B2 (ja) | 2004-06-21 | 2011-07-20 | 出光興産株式会社 | バックシャーシ一体型反射器、バックライト装置及び液晶表示装置 |
US20060054919A1 (en) | 2004-08-27 | 2006-03-16 | Kyocera Corporation | Light-emitting element, method for manufacturing the same and lighting equipment using the same |
JP4812369B2 (ja) | 2004-08-27 | 2011-11-09 | 京セラ株式会社 | 発光素子の製造方法 |
JP4667803B2 (ja) | 2004-09-14 | 2011-04-13 | 日亜化学工業株式会社 | 発光装置 |
DE102004060358A1 (de) | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7419839B2 (en) * | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
JP2006147787A (ja) | 2004-11-18 | 2006-06-08 | Sony Corp | 発光素子及びその製造方法 |
JP4901117B2 (ja) | 2005-03-04 | 2012-03-21 | 株式会社東芝 | 半導体発光素子及び半導体発光素子の製造方法 |
KR100606551B1 (ko) | 2005-07-05 | 2006-08-01 | 엘지전자 주식회사 | 발광소자 제조방법 |
TWI253770B (en) | 2005-07-11 | 2006-04-21 | Univ Nat Central | Light emitting diode and manufacturing method thereof |
US7609444B2 (en) * | 2005-10-21 | 2009-10-27 | Hewlett-Packard Development Company, L.P. | Projection partitioning and aligning |
US7514721B2 (en) | 2005-11-29 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Luminescent ceramic element for a light emitting device |
KR100723247B1 (ko) | 2006-01-10 | 2007-05-29 | 삼성전기주식회사 | 칩코팅형 led 패키지 및 그 제조방법 |
JP2007214276A (ja) * | 2006-02-08 | 2007-08-23 | Mitsubishi Chemicals Corp | 発光素子 |
WO2007091704A1 (en) | 2006-02-08 | 2007-08-16 | Showa Denko K.K. | Light-emitting diode and fabrication method thereof |
CN101395728B (zh) * | 2006-03-10 | 2011-04-13 | 松下电工株式会社 | 发光元件及其制造方法 |
JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
JP4889361B2 (ja) | 2006-04-20 | 2012-03-07 | 昭和電工株式会社 | 半導体発光素子の製造方法 |
CN100452327C (zh) | 2006-05-19 | 2009-01-14 | 友达光电股份有限公司 | 薄膜晶体管的制作方法 |
TW200807760A (en) | 2006-05-23 | 2008-02-01 | Alps Electric Co Ltd | Method for manufacturing semiconductor light emitting element |
US7829905B2 (en) * | 2006-09-07 | 2010-11-09 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Semiconductor light emitting device |
US7800122B2 (en) * | 2006-09-07 | 2010-09-21 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Light emitting diode device, and manufacture and use thereof |
JP4353232B2 (ja) | 2006-10-24 | 2009-10-28 | ソニー株式会社 | 発光素子 |
KR101271225B1 (ko) | 2006-10-31 | 2013-06-03 | 삼성디스플레이 주식회사 | 발광 다이오드 칩 및 발광 다이오드 광원 모듈의 제조 방법 |
US9178121B2 (en) | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
JP2008159708A (ja) | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | 発光装置 |
TW200828624A (en) * | 2006-12-27 | 2008-07-01 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
TW200830577A (en) | 2007-01-05 | 2008-07-16 | Uni Light Touchtek Corp | Method for manufacturing light emitting diode devices |
US10023796B2 (en) | 2007-02-07 | 2018-07-17 | Lumileds Llc | Illumination system comprising composite monolithic ceramic luminescence converter |
US7601989B2 (en) | 2007-03-27 | 2009-10-13 | Philips Lumileds Lighting Company, Llc | LED with porous diffusing reflector |
JP5158472B2 (ja) | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
US20110062469A1 (en) | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
-
2008
- 2008-07-24 US US12/178,902 patent/US10147843B2/en active Active
-
2009
- 2009-07-15 CN CN200980128853.0A patent/CN102106004B/zh active Active
- 2009-07-15 WO PCT/IB2009/053065 patent/WO2010010485A1/en active Application Filing
- 2009-07-15 EP EP09786606.5A patent/EP2308107B1/en active Active
- 2009-07-15 CN CN201610396252.XA patent/CN105870271A/zh active Pending
- 2009-07-15 JP JP2011519263A patent/JP2011529267A/ja active Pending
- 2009-07-15 KR KR1020117004185A patent/KR20110031999A/ko not_active Application Discontinuation
- 2009-07-21 TW TW098124585A patent/TWI505501B/zh active
-
2015
- 2015-01-09 JP JP2015003148A patent/JP2015084451A/ja active Pending
- 2015-09-29 JP JP2015191125A patent/JP6074005B2/ja active Active
-
2017
- 2017-01-05 JP JP2017000636A patent/JP2017059858A/ja active Pending
-
2018
- 2018-12-03 US US16/208,045 patent/US20190189838A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007214225A (ja) * | 2006-02-08 | 2007-08-23 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
JP2007335879A (ja) * | 2006-06-09 | 2007-12-27 | Philips Lumileds Lightng Co Llc | 多孔質層を含む半導体発光デバイス |
Also Published As
Publication number | Publication date |
---|---|
JP6074005B2 (ja) | 2017-02-01 |
JP2017059858A (ja) | 2017-03-23 |
EP2308107A1 (en) | 2011-04-13 |
KR20110031999A (ko) | 2011-03-29 |
US20190189838A1 (en) | 2019-06-20 |
US20100019260A1 (en) | 2010-01-28 |
US10147843B2 (en) | 2018-12-04 |
TWI505501B (zh) | 2015-10-21 |
TW201027795A (en) | 2010-07-16 |
JP2016021592A (ja) | 2016-02-04 |
WO2010010485A1 (en) | 2010-01-28 |
CN102106004B (zh) | 2016-07-06 |
EP2308107B1 (en) | 2020-03-25 |
JP2011529267A (ja) | 2011-12-01 |
CN102106004A (zh) | 2011-06-22 |
CN105870271A (zh) | 2016-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6074005B2 (ja) | 窓層及び光指向構造を含む半導体発光装置の製造方法 | |
JP4885521B2 (ja) | パッケージ統合された薄膜led | |
JP6023660B2 (ja) | 半導体発光素子及び半導体発光装置 | |
US20180151548A1 (en) | Optoelectronic Component and Method for Producing an Optoelectronic Component | |
US8847267B2 (en) | Light emitting diode with metal piles and multi-passivation layers and its manufacturing method | |
JPWO2012160604A1 (ja) | 発光素子チップ及びその製造方法 | |
JP2010118450A (ja) | 半導体発光素子の製造方法及び半導体発光素子 | |
KR100648136B1 (ko) | 발광 다이오드 및 그 제조 방법 | |
TW201547053A (zh) | 形成發光裝置的方法 | |
TW201318236A (zh) | 具增大面積之氮化鎵發光二極體及其製造方法 | |
KR100530986B1 (ko) | 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법 | |
KR101128261B1 (ko) | 전공정이 웨이퍼 레벨로 제조된 led 패키지 및 그 제조방법 | |
KR100629929B1 (ko) | 수직 전극 구조를 가지는 발광 다이오드 | |
KR100557855B1 (ko) | 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법 | |
TWI239662B (en) | A method of making high power light emitting diode and the product made therefrom | |
TW200834977A (en) | Method of making high brightness vertical light-emitting diodes and structure made thereby | |
KR20120013759A (ko) | 발광소자 패키지 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20150609 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151014 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151015 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20151016 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160414 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160607 |