JP2015038252A - フィルタを有する容器 - Google Patents
フィルタを有する容器 Download PDFInfo
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- JP2015038252A JP2015038252A JP2014207071A JP2014207071A JP2015038252A JP 2015038252 A JP2015038252 A JP 2015038252A JP 2014207071 A JP2014207071 A JP 2014207071A JP 2014207071 A JP2014207071 A JP 2014207071A JP 2015038252 A JP2015038252 A JP 2015038252A
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- 239000002245 particle Substances 0.000 claims abstract description 380
- 239000002243 precursor Substances 0.000 claims abstract description 262
- 239000012530 fluid Substances 0.000 claims abstract description 175
- 230000004888 barrier function Effects 0.000 claims abstract description 166
- 239000000463 material Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000012159 carrier gas Substances 0.000 claims description 70
- 238000004891 communication Methods 0.000 claims description 57
- 239000007787 solid Substances 0.000 claims description 49
- 239000007789 gas Substances 0.000 claims description 45
- 230000008016 vaporization Effects 0.000 claims description 25
- 238000013461 design Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000011148 porous material Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 16
- 238000005245 sintering Methods 0.000 description 15
- 238000009834 vaporization Methods 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 229910001220 stainless steel Inorganic materials 0.000 description 13
- 239000012071 phase Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 239000010935 stainless steel Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 11
- 239000007788 liquid Substances 0.000 description 10
- -1 n- butyl Chemical group 0.000 description 10
- 238000000859 sublimation Methods 0.000 description 10
- 230000008022 sublimation Effects 0.000 description 10
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000013618 particulate matter Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 241000219793 Trifolium Species 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- FWIYBTVHGYLSAZ-UHFFFAOYSA-I pentaiodoniobium Chemical compound I[Nb](I)(I)(I)I FWIYBTVHGYLSAZ-UHFFFAOYSA-I 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- UREKUAIOJZNUGZ-LWTKGLMZSA-K (z)-5-bis[[(z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-yl]oxy]alumanyloxy-2,2,6,6-tetramethylhept-4-en-3-one Chemical compound CC(C)(C)C(=O)\C=C(C(C)(C)C)/O[Al](O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)O\C(=C/C(=O)C(C)(C)C)C(C)(C)C UREKUAIOJZNUGZ-LWTKGLMZSA-K 0.000 description 1
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- AKRAPVPNWWFNCV-UHFFFAOYSA-N 2,4,5-tritert-butyl-1h-imidazole Chemical compound CC(C)(C)C1=NC(C(C)(C)C)=C(C(C)(C)C)N1 AKRAPVPNWWFNCV-UHFFFAOYSA-N 0.000 description 1
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001203 Alloy 20 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YYKBKTFUORICGA-UHFFFAOYSA-N CCN(CC)[Ta](=NC(C)(C)C)(N(CC)CC)N(CC)CC Chemical compound CCN(CC)[Ta](=NC(C)(C)C)(N(CC)CC)N(CC)CC YYKBKTFUORICGA-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- 229910000934 Monel 400 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- NETPMBDRPQCGTR-UHFFFAOYSA-N [W].C1=CC=CC=CC1 Chemical compound [W].C1=CC=CC=CC1 NETPMBDRPQCGTR-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 229940059260 amidate Drugs 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- UCRXQUVKDMVBBM-UHFFFAOYSA-N benzyl 2-amino-3-(4-phenylmethoxyphenyl)propanoate Chemical compound C=1C=CC=CC=1COC(=O)C(N)CC(C=C1)=CC=C1OCC1=CC=CC=C1 UCRXQUVKDMVBBM-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- WQAVHVQYKSYTII-UHFFFAOYSA-N carbon monoxide;cyclohepta-1,3,5-triene;molybdenum Chemical group [Mo].[O+]#[C-].[O+]#[C-].[O+]#[C-].C1C=CC=CC=C1 WQAVHVQYKSYTII-UHFFFAOYSA-N 0.000 description 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- OANFWJQPUHQWDL-UHFFFAOYSA-N copper iron manganese nickel Chemical compound [Mn].[Fe].[Ni].[Cu] OANFWJQPUHQWDL-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 description 1
- GOVWJRDDHRBJRW-UHFFFAOYSA-N diethylazanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC GOVWJRDDHRBJRW-UHFFFAOYSA-N 0.000 description 1
- BLJLDDVBXQYWNX-UHFFFAOYSA-N dimethylazanide;tungsten Chemical compound [W].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C BLJLDDVBXQYWNX-UHFFFAOYSA-N 0.000 description 1
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 1
- OTPYAHJOYRJWFM-UHFFFAOYSA-N distrontium 2,4,5-tritert-butylimidazol-3-ide Chemical compound C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Sr+2].[Sr+2] OTPYAHJOYRJWFM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000002310 elbow joint Anatomy 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- UARGAUQGVANXCB-UHFFFAOYSA-N ethanol;zirconium Chemical compound [Zr].CCO.CCO.CCO.CCO UARGAUQGVANXCB-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- BRUWTWNPPWXZIL-UHFFFAOYSA-N ethyl(methyl)azanide;tantalum(5+) Chemical compound [Ta+5].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C BRUWTWNPPWXZIL-UHFFFAOYSA-N 0.000 description 1
- NPUKDXXFDDZOKR-LLVKDONJSA-N etomidate Chemical compound CCOC(=O)C1=CN=CN1[C@H](C)C1=CC=CC=C1 NPUKDXXFDDZOKR-LLVKDONJSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 229910001055 inconels 600 Inorganic materials 0.000 description 1
- 229910001119 inconels 625 Inorganic materials 0.000 description 1
- 229910001098 inconels 690 Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- SORGMJIXNUWMMR-UHFFFAOYSA-N lanthanum(3+);propan-2-olate Chemical compound [La+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SORGMJIXNUWMMR-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- LVNAMAOHFNPWJB-UHFFFAOYSA-N methanol;tantalum Chemical compound [Ta].OC.OC.OC.OC.OC LVNAMAOHFNPWJB-UHFFFAOYSA-N 0.000 description 1
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- ZGSOBQAJAUGRBK-UHFFFAOYSA-N propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] ZGSOBQAJAUGRBK-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 229910001495 sodium tetrafluoroborate Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- MISXNQITXACHNJ-UHFFFAOYSA-I tantalum(5+);pentaiodide Chemical compound [I-].[I-].[I-].[I-].[I-].[Ta+5] MISXNQITXACHNJ-UHFFFAOYSA-I 0.000 description 1
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 description 1
- YXPHMGGSLJFAPL-UHFFFAOYSA-J tetrabromotungsten Chemical compound Br[W](Br)(Br)Br YXPHMGGSLJFAPL-UHFFFAOYSA-J 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- YPFBRNLUIFQCQL-UHFFFAOYSA-K tribromomolybdenum Chemical compound Br[Mo](Br)Br YPFBRNLUIFQCQL-UHFFFAOYSA-K 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
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Abstract
Description
1.06×104Pa(80torr)未満、又は7.98×103Pa(60torr)トール未満又は6.65×105Pa(50torr)未満、又は5.32×105Pa(40torr)未満又は3.99×103Pa(30torr)未満、又は2.66×103Pa(20torr)未満である。これらの圧力降下は、容器を通る前駆体流体流の1〜4000標準立方センチメートル(sccm)、又は1000〜3000sccm、又は1000〜2500sccm、又は約1500sccmという容器内通過流量について維持され得る。容器の作動圧力を低下させるためには、粒子障壁の前後の圧力降下がより低いことが望ましい。より低い作動圧力は、前駆体気化速度を増大させる。前駆体化学物質がその熱分解温度か又はその近くとなるように容器が加熱される蒸気送達の利用分野については、作動圧力を低下させることで、同じ流量をなおも維持しながら作動温度を低下させることが可能となる。より低い作動温度は、高い作動温度によってひき起こされると考えられる前駆体の劣化を回避させる。
粒子障壁を一切有しない塩化タンタル容器の粒子試験
グローブボックス内で、入口気体流を容器の側壁の方に誘導する90度曲がった入口管を備えた1.2リットル(L)入りステンレス鋼(SS)製容器中に、200gの塩化タンタルを投入した。容器には、入口管及び出口管に結合されたバルブと注入ポートも備わっていた。この容器内では、内部フィルタは一切使用しなかった。容器を160℃で6時間加熱して、塩化タンタル粉末を焼結した。
出口に設置したSS管状粒子障壁(フィルタ)を有する塩化タンタル容器の粒子試験を実施した。
容器内のペンタキス(ジメチルアミド)タンタル(PDMAT)の焼結を以下の通りに実施した。
容器内のペンタキス(ジメチルアミド)タンタル(PDMAT)の焼結を以下の通りに実施した。
容器内のペンタキス(ジメチルアミド)タンタル(PDMAT)の焼結を以下の通りに実施した。
PDMAT粉末を焼結するために200sccmの窒素下で80℃で16時間容器を加熱したという点を除いて、実施例2を反復した。この焼結手順の後、容器を120度回転させて固体を検査し、緩んだ粒子の存在について観察した。緩んだ粉末は全く見られなかった。粉末はこの手順の間に固体ケークの形に焼結された。
圧力降下試験
内部に前駆体を有する容器の内側に粒子障壁を作り出すために内部フィルタを付加することで、出口の前駆体含有流体流内の粒子を削減又は除去することが可能である。同様に、既存のプロセスツールの流量及び温度パラメータを修正する必要性を回避するために圧力降下を最小限におさえることも所望される。そして、前駆体の熱分解温度又はその近くで前駆体化学物質の気化及び/又は昇華方法が実施されている容器については、容器内の圧力を低下できることにより、容器を退出する前駆体含有流体の流量を同じに維持しかくして前駆体の保存可能期間を延長させながら作動温度を低下させることが可能になる。
・容器の上流側のN2 質量流量制御装置(MFC)の圧力=3.45×104(5psig)、MFCの流量=1500sccmN2
・容器の試験システム下流側圧力=真空
・温度=周囲温度
図7に示されているものなどのカップ状フィルタについてコンピュータフローモデリングを行なった。モデル内に提示した作動条件は、以下の通りであった。温度:およそ95℃、圧力:およそ3.99×105Pa(およそ30torr)、1lpmの窒素の入口条件:1.5秒間95℃、4秒間保持、出口の圧力条件変化:2.66×103Pa(20torr)。モデルはさらに、局所的流量に線形比例したフィルタの流れ抵抗を含んでいる。コンピュータモデリングの範囲内で、以下のものが解析された:1lpmN2、95℃の入口条件下で定常状態解析を行なう、容器の高及び低負荷充填レベルを比較する、そしてもとの入口「T字」設計と、「T字」無しの代替案を比較する。
Claims (23)
- 内部に格納された前駆体材料から前駆体含有流体流を搬送するための容器において、上面、1つ以上の側壁及び基部により画定された内部容積と、気化した前駆体用の少なくとも1つの流体出口及び内部容積内に少なくとも1つの粒子制限空間の少なくとも一部を画定する少なくとも1つの粒子障壁とを含み、前記少なくとも1つの粒子障壁が少なくとも1つの3次元フィルタを含む、容器。
- 前記少なくとも1つの粒子制限空間が、少なくとも1つの出口と流体連通状態にあり、かつ前記少なくとも1つの出口と流体連通状態にある少なくとも1つの粒子制限空間を除いた内部容積の一部分と粒子制限流体連通状態にある、請求項1に記載の容器。
- 少なくとも1つのキャリヤガスを容器の内部容積内に誘導する少なくとも1つの入口をさらに含む、請求項1に記載の容器。
- 前記少なくとも1つの粒子制限空間が前記少なくとも1つの入口と流体連通状態にあり、かつ前記少なくとも1つの入口と連通状態にある少なくとも1つの粒子制限空間を除いた内部容積の一部分と粒子制限流体連通状態にある、請求項3に記載の容器。
- 前記少なくとも1つの粒子制限空間が少なくとも1つの第1の粒子制限空間と少なくとも1つの第2の粒子制限空間とを含み、前記少なくとも1つの第1の粒子制限空間及び少なくとも1つの第2の粒子制限空間の各々が、少なくとも1つのフィルタを含み、前記少なくとも1つの第1の粒子制限空間が前記少なくとも1つの流体出口と流体連通状態にあり、前記少なくとも1つの第2の粒子制限空間が前記少なくとも1つの流体入口と流体連通状態にあり、前記少なくとも1つの第1の粒子制限空間及び第2の粒子制限空間が、前記少なくとも1つの第1の粒子制限空間及び第2の粒子制限空間を除いた前記内部容積の前記一部分と粒子制限流体連通状態にある、請求項3に記載の容器。
- 前記第2の粒子障壁が少なくとも1つの2次元フィルタを含む、請求項5に記載の容器。
- 前記第2の粒子障壁が少なくとも1つの3次元フィルタを含む、請求項5に記載の容器。
- 前記粒子障壁が、内部容積内に延在する入口管、内部容積内に延在する出口管、1つ以上の側壁、上面又は基部のうちの1つ以上に取付けられている、請求項1に記載の容器。
- さらに前記上面が蓋であり、さらに蓋を貫通し少なくとも1つのキャリヤガスを容器の内部容積内に導く少なくとも1つの流体入口をさらに含み、前記少なくとも1つの流体出口が蓋を貫通している、請求項1に記載の容器。
- 前記少なくとも1つの3次元フィルタが、管状、カップ状、蛇腹状、立方体、円錐形、アイスホッケー用パック及び管状ループからなる群から選択された形状を有する、請求項1に記載の容器。
- 少なくとも1つの3次元フィルタが、単一カップ又は多重カップから選択されたカップを含む、請求項10に記載の容器。
- 前記カップが単一カップである、請求項10に記載の容器。
- カップが、その内部に管をさらに含む、請求項12に記載の容器。
- 少なくとも1つのフィルタが129平方センチより大きい表面積を有する、請求項1に記載の容器。
- 少なくとも1つのフィルタが、0.098cm-1以上の容積設計係数を有する、請求項1に記載の容器。
- 容器内の少なくとも1つのフィルタが2.03cm超の表面積設計係数を有する、請求項1に記載の容器。
- 多数の前記流体出口を含み、前記流体出口の各々がその上に1つの粒子障壁を有している、請求項1に記載の容器。
- 容器から前駆体の気相を含む前駆体含有流体流を送出する方法において、
上面、1つ以上の側壁及び基部により画定される内部容積を含む容器を提供するステップであって、前記容器が内部容積内の前駆体と、気化した前駆体のための少なくとも1つの流体出口とを有し、前記容器が、内部容積内に少なくとも1つの粒子制限空間の少なくとも一部を画定する少なくとも1つの粒子障壁を有し、前記少なくとも1つの粒子障壁が少なくとも1つの3次元フィルタを含んでいる、ステップと、
前駆体を気化させて流体流を形成する気化ステップであって、前記少なくとも1つの粒子障壁は前記流体流中の粒子が少なくとも1つの粒子制限空間内に通過するのを妨げている気化ステップと、を含む方法。 - さらに前記少なくとも1つの粒子制限空間が、少なくとも1つの出口と流体連通状態にあり、内部容積の残りの部分と粒子制限流体連通状態にあり、かつさらに気化ステップの後に、
前記内部容積から前記少なくとも1つの粒子制限空間内に前記少なくとも1つの粒子障壁を通って前記流体流を移行させるステップと、
少なくとも1つの出口を通って前記流体流と共に容器を退出するステップと、
を含む、請求項18に記載の方法。 - 少なくとも1つのキャリヤガスを少なくとも1つの入口を通して容器内に導入するステップをさらに含み、少なくとも1つのキャリヤガス及び前駆体の気相が組合わさって流体流を形成する、請求項18に記載の方法。
- 前記少なくとも1つの入口と流体連通状態にある少なくとも1つの第2の粒子制限空間を通って少なくとも1つのキャリヤガスを流すステップをさらに含み、前記第2の粒子制限空間が前記容器の内部容積内に位置設定された少なくとも1つの粒子障壁を含む、請求項20に記載の方法。
- 前記前駆体が前記容器の基部又はその近くに位置設定され、前記キャリヤガスが、蓋を貫通する前記少なくとも1つの入口から容器の基部に向かって流れる、請求項20に記載の方法。
- 前記気化ステップに先立って、(a)緩んだ前駆体粒子を固体へと焼結させる条件下で前駆体を加熱すること、(b)固体前駆体が溶融できるようにする条件の下で前駆体を加熱し、前駆体の融点より低い温度に前駆体を冷却して固体を形成すること、あるいは(c)溶剤中に溶融した前駆体を容器内に導入し、かつ残留する溶剤を除去するのに充分な条件下で前駆体を加熱して固体を形成することによって、容器内で固体前駆体を調製するステップをさらに含む、請求項18に記載の方法。
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US61/764,851 | 2013-02-14 | ||
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016172902A (ja) * | 2015-03-17 | 2016-09-29 | 東京エレクトロン株式会社 | 原料ガス供給装置及び成膜装置 |
JP2020025959A (ja) * | 2018-08-16 | 2020-02-20 | エーエスエム アイピー ホールディング ビー.ブイ. | 固体原料昇華器 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6094513B2 (ja) * | 2014-02-28 | 2017-03-15 | 東京エレクトロン株式会社 | 処理ガス発生装置、処理ガス発生方法、基板処理方法及び記憶媒体 |
US9863041B2 (en) * | 2014-10-08 | 2018-01-09 | Lam Research Corporation | Internally heated porous filter for defect reduction with liquid or solid precursors |
US9932666B2 (en) * | 2015-03-30 | 2018-04-03 | Siva Power, Inc. | Fluid-assisted thermal management of evaporation sources |
US10100406B2 (en) * | 2015-04-17 | 2018-10-16 | Versum Materials Us, Llc | High purity tungsten hexachloride and method for making same |
US20170023235A1 (en) * | 2015-07-21 | 2017-01-26 | Apple Inc. | Sublimator/vaporizer |
EP3162914A1 (en) * | 2015-11-02 | 2017-05-03 | IMEC vzw | Apparatus and method for delivering a gaseous precursor to a reaction chamber |
US10480070B2 (en) | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
KR102008056B1 (ko) * | 2017-04-12 | 2019-08-06 | 오충석 | 화학 기상 증착용 반응기 및 이를 포함하는 화학 기상 증착 장치 |
KR102344996B1 (ko) | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
JP7076999B2 (ja) | 2017-12-14 | 2022-05-30 | 日本エア・リキード合同会社 | 固体材料の前処理方法および固体材料が充填されている固体材料製品を製造する方法 |
JP2019151894A (ja) * | 2018-03-05 | 2019-09-12 | 東芝メモリ株式会社 | 気化装置および気化ガス供給ユニット |
US11162174B2 (en) * | 2018-09-20 | 2021-11-02 | Taiwan Semiconductor Manufacturing Co, Ltd. | Liquid delivery and vaporization apparatus and method |
US20200165270A1 (en) * | 2018-11-28 | 2020-05-28 | Versum Materials Us, Llc | Low Halide Lanthanum Precursors For Vapor Deposition |
CN112342526A (zh) * | 2019-08-09 | 2021-02-09 | Asm Ip私人控股有限公司 | 包括冷却装置的加热器组件及其使用方法 |
US10844483B1 (en) | 2019-12-16 | 2020-11-24 | Quantum Elements Development, Inc. | Quantum printing methods |
US20210238745A1 (en) * | 2020-02-03 | 2021-08-05 | Applied Materials, Inc. | Showerhead assembly |
JP7098677B2 (ja) | 2020-03-25 | 2022-07-11 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US11484941B2 (en) | 2020-12-15 | 2022-11-01 | Quantum Elements Development Inc. | Metal macrostructures |
US11623871B2 (en) | 2020-12-15 | 2023-04-11 | Quantum Elements Development Inc. | Rare earth metal instantiation |
US20220403512A1 (en) * | 2021-06-22 | 2022-12-22 | Applied Materials, Inc. | Bottom Fed Sublimation Bed for High Saturation Efficiency in Semiconductor Applications |
KR20230040279A (ko) * | 2021-09-15 | 2023-03-22 | 에이에스엠 아이피 홀딩 비.브이. | 액체를 제어하기 위한 방법 및 장치 |
CN115172216B (zh) * | 2022-07-06 | 2023-11-14 | 江苏晟驰微电子有限公司 | 一种功率器件制造用切割水再利用装置 |
WO2024124116A1 (en) * | 2022-12-09 | 2024-06-13 | Entegris, Inc. | Molybdenum precursors and related methods |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169123A (ja) * | 1983-03-16 | 1984-09-25 | Agency Of Ind Science & Technol | 化合物半導体のエピタキシヤル成長法 |
JPH01184835A (ja) * | 1988-01-14 | 1989-07-24 | Toshiba Corp | 2−6族化合物半導体のエピタキシャル成長方法 |
JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
JPH11193462A (ja) * | 1997-12-26 | 1999-07-21 | Dowa Mining Co Ltd | Cvd法における有機アルカリ土類金属錯体の気化方法 |
JP2004115831A (ja) * | 2002-09-24 | 2004-04-15 | Fujitsu Ltd | 固体材料のガス化方法及び装置ならびに薄膜形成方法及び装置 |
JP2004363562A (ja) * | 2003-05-12 | 2004-12-24 | Tokyo Electron Ltd | 気化原料の供給構造、原料気化器及び反応処理装置 |
JP2007100207A (ja) * | 2005-09-09 | 2007-04-19 | Lintec Co Ltd | 低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器 |
JP2010502833A (ja) * | 2006-08-31 | 2010-01-28 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 制御された固体モルフォロジを利用する、固体前駆体に基づいた流体の送出 |
JP2010153741A (ja) * | 2008-12-26 | 2010-07-08 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2012082527A (ja) * | 2004-12-08 | 2012-04-26 | Rohm & Haas Electronic Materials Llc | 供給装置 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4984597B1 (en) | 1984-05-21 | 1999-10-26 | Cfmt Inc | Apparatus for rinsing and drying surfaces |
US5037624A (en) * | 1987-03-24 | 1991-08-06 | Advanced Technology Materials Inc. | Composition, apparatus, and process, for sorption of gaseous compounds of group II-VII elements |
US4738693A (en) | 1987-04-27 | 1988-04-19 | Advanced Technology Materials, Inc. | Valve block and container for semiconductor source reagent dispensing and/or purification |
US4723967A (en) * | 1987-04-27 | 1988-02-09 | Advanced Technology Materials, Inc. | Valve block and container for semiconductor source reagent dispensing and/or purification |
GB2223509B (en) | 1988-10-04 | 1992-08-05 | Stc Plc | Vapour phase processing |
JP2614338B2 (ja) | 1990-01-11 | 1997-05-28 | 株式会社東芝 | 液体ソース容器 |
TW203633B (ja) | 1991-06-03 | 1993-04-11 | L Air Liquide Sa Pour L Expl Des Proce | |
US5674574A (en) | 1996-05-20 | 1997-10-07 | Micron Technology, Inc. | Vapor delivery system for solid precursors and method regarding same |
US5980744A (en) * | 1998-03-11 | 1999-11-09 | The New Can Co., Inc | Beaded center tube |
US6202591B1 (en) | 1998-11-12 | 2001-03-20 | Flex Products, Inc. | Linear aperture deposition apparatus and coating process |
JP2000174005A (ja) | 1998-12-01 | 2000-06-23 | Japan Pionics Co Ltd | ヒーター内蔵バルブユニット |
GB9902220D0 (en) * | 1999-02-01 | 1999-03-24 | Cyclotech Limited | Fluid processing |
US6984415B2 (en) | 1999-08-20 | 2006-01-10 | International Business Machines Corporation | Delivery systems for gases for gases via the sublimation of solid precursors |
US6444038B1 (en) | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
KR100360494B1 (ko) | 1999-09-21 | 2002-11-13 | 삼성전자 주식회사 | 기화장치 |
US6635114B2 (en) | 1999-12-17 | 2003-10-21 | Applied Material, Inc. | High temperature filter for CVD apparatus |
US6431229B1 (en) | 2001-08-24 | 2002-08-13 | Air Products And Chemicals, Inc. | Solventless purgeable diaphragm valved manifold for low vapor pressure chemicals |
US20030042630A1 (en) | 2001-09-05 | 2003-03-06 | Babcoke Jason E. | Bubbler for gas delivery |
US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
JP3822135B2 (ja) | 2002-05-13 | 2006-09-13 | 日本パイオニクス株式会社 | 気化供給装置 |
US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
US7524374B2 (en) | 2002-07-17 | 2009-04-28 | Applied Materials, Inc. | Method and apparatus for generating a precursor for a semiconductor processing system |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7300038B2 (en) | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US6764387B1 (en) | 2003-03-07 | 2004-07-20 | Applied Materials Inc. | Control of a multi-chamber carrier head |
US7261118B2 (en) | 2003-08-19 | 2007-08-28 | Air Products And Chemicals, Inc. | Method and vessel for the delivery of precursor materials |
FR2878453B1 (fr) | 2004-11-30 | 2007-03-16 | Centre Nat Rech Scient Cnrse | Dispositif de fourniture de vapeurs d'un precurseur solide a un appareil de traitement |
KR101299791B1 (ko) | 2005-03-16 | 2013-08-23 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 시약의 고체 소스로부터 시약을 운반하기 위한 시스템 |
US7459395B2 (en) | 2005-09-28 | 2008-12-02 | Tokyo Electron Limited | Method for purifying a metal carbonyl precursor |
US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
US7562672B2 (en) | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
FI121430B (fi) | 2006-04-28 | 2010-11-15 | Beneq Oy | Kuuma lähde |
JP5073751B2 (ja) | 2006-10-10 | 2012-11-14 | エーエスエム アメリカ インコーポレイテッド | 前駆体送出システム |
US9109287B2 (en) | 2006-10-19 | 2015-08-18 | Air Products And Chemicals, Inc. | Solid source container with inlet plenum |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
JP5656184B2 (ja) | 2006-11-22 | 2015-01-21 | ソイテック | 三塩化ガリウムの噴射方式 |
US8708320B2 (en) * | 2006-12-15 | 2014-04-29 | Air Products And Chemicals, Inc. | Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel |
EP2062632A1 (de) * | 2007-11-21 | 2009-05-27 | IBS Filtran Kunststoff-/Metallerzeugnisse GmbH | Filterelement |
US8137468B2 (en) | 2008-03-17 | 2012-03-20 | Applied Materials, Inc. | Heated valve manifold for ampoule |
US20090236447A1 (en) | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Method and apparatus for controlling gas injection in process chamber |
US8343583B2 (en) | 2008-07-10 | 2013-01-01 | Asm International N.V. | Method for vaporizing non-gaseous precursor in a fluidized bed |
US8002247B2 (en) | 2008-08-22 | 2011-08-23 | Air Products And Chemicals, Inc. | Cross purge valve and container assembly |
JP4972657B2 (ja) | 2009-02-02 | 2012-07-11 | 東京エレクトロン株式会社 | 気化器及び成膜装置 |
JP5247528B2 (ja) | 2009-02-23 | 2013-07-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、基板処理方法及びガス導入手段 |
US8162296B2 (en) | 2009-03-19 | 2012-04-24 | Air Products And Chemicals, Inc. | Splashguard for high flow vacuum bubbler vessel |
WO2010124174A2 (en) | 2009-04-24 | 2010-10-28 | Applied Materials, Inc. | Ampoule with integrated hybrid valve |
FI20095616L (fi) * | 2009-06-02 | 2010-12-03 | Pomatec Oy | Menetelmä huokoisen tuotteen prosessoimiseksi ja huokoinen tuote |
WO2011053505A1 (en) | 2009-11-02 | 2011-05-05 | Sigma-Aldrich Co. | Evaporator |
-
2013
- 2013-05-20 US US13/897,967 patent/US9598766B2/en active Active
- 2013-05-24 TW TW102118515A patent/TWI500803B/zh active
- 2013-05-24 EP EP13169271.7A patent/EP2677061A3/en not_active Withdrawn
- 2013-05-27 CN CN201310399699.9A patent/CN103480208A/zh active Pending
- 2013-05-27 CN CN201810346480.5A patent/CN108570657A/zh active Pending
- 2013-05-27 KR KR1020130059995A patent/KR20130132703A/ko active Search and Examination
- 2013-05-27 JP JP2013111085A patent/JP6151565B2/ja active Active
-
2014
- 2014-10-08 JP JP2014207071A patent/JP5883104B2/ja active Active
-
2016
- 2016-03-25 KR KR1020160036115A patent/KR101941526B1/ko active IP Right Grant
-
2017
- 2017-01-30 US US15/419,395 patent/US20170137936A1/en not_active Abandoned
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169123A (ja) * | 1983-03-16 | 1984-09-25 | Agency Of Ind Science & Technol | 化合物半導体のエピタキシヤル成長法 |
JPH01184835A (ja) * | 1988-01-14 | 1989-07-24 | Toshiba Corp | 2−6族化合物半導体のエピタキシャル成長方法 |
JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
JPH11193462A (ja) * | 1997-12-26 | 1999-07-21 | Dowa Mining Co Ltd | Cvd法における有機アルカリ土類金属錯体の気化方法 |
JP2004115831A (ja) * | 2002-09-24 | 2004-04-15 | Fujitsu Ltd | 固体材料のガス化方法及び装置ならびに薄膜形成方法及び装置 |
JP2004363562A (ja) * | 2003-05-12 | 2004-12-24 | Tokyo Electron Ltd | 気化原料の供給構造、原料気化器及び反応処理装置 |
JP2012082527A (ja) * | 2004-12-08 | 2012-04-26 | Rohm & Haas Electronic Materials Llc | 供給装置 |
JP2007100207A (ja) * | 2005-09-09 | 2007-04-19 | Lintec Co Ltd | 低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器 |
JP2010502833A (ja) * | 2006-08-31 | 2010-01-28 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 制御された固体モルフォロジを利用する、固体前駆体に基づいた流体の送出 |
JP2010153741A (ja) * | 2008-12-26 | 2010-07-08 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
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US9598766B2 (en) | 2017-03-21 |
EP2677061A3 (en) | 2015-11-11 |
US20130312855A1 (en) | 2013-11-28 |
KR20160040488A (ko) | 2016-04-14 |
JP5883104B2 (ja) | 2016-03-09 |
JP6151565B2 (ja) | 2017-06-21 |
CN103480208A (zh) | 2014-01-01 |
JP2014012888A (ja) | 2014-01-23 |
TWI500803B (zh) | 2015-09-21 |
EP2677061A2 (en) | 2013-12-25 |
CN108570657A (zh) | 2018-09-25 |
TW201348508A (zh) | 2013-12-01 |
KR20130132703A (ko) | 2013-12-05 |
KR101941526B1 (ko) | 2019-01-24 |
US20170137936A1 (en) | 2017-05-18 |
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