JP2007100207A - 低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器 - Google Patents
低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器 Download PDFInfo
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- JP2007100207A JP2007100207A JP2005300521A JP2005300521A JP2007100207A JP 2007100207 A JP2007100207 A JP 2007100207A JP 2005300521 A JP2005300521 A JP 2005300521A JP 2005300521 A JP2005300521 A JP 2005300521A JP 2007100207 A JP2007100207 A JP 2007100207A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0391—Affecting flow by the addition of material or energy
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
【解決手段】気化器(10)は、ヒータ(66)、(76)、及び(81)により加熱された気化室(60)と、気化室(60)の下端部に配置され、ヒータ(81)により加熱された一次フィルタ(80)と、流量調節された液体原料(LM)を気化室(60)の上方から一次フィルタ(80)に向けて滴下する液体原料供給部(24)と、キャリアガス(CG)を一次フィルタ(80)の下面へ導くキャリアガス導入路(78)と、キャリアガス(CG)及び気化された液体原料(VM)との混合ガス(VM+CG)を気化室(60)の上部から排出する原料導出路(62)とを備える。一次フィルタ(80)に滴下された液体原料(LM)は、一部が気化され、更に下方向からのキャリアガス(CG)によるバブリング作用を受けてミスト状となる。ミストの表面積が非ミスト状態と比較して大きいので、液体原料(LM)は効率良く熱を受ける事ができ、低温度で液体原料(LM)を気化する事ができる。
【選択図】図2
Description
(24)…液体原料供給部
(26)…気化部
(60)…気化室
(62)…原料導出路
(64)…二次フィルタ
(66)…上段ブロックヒータ
(76)…中段ブロックヒータ
(78)…キャリアガス導入路
(80)…一次フィルタ
(81)…下段ブロックヒータ
Claims (6)
- キャリアガスを、ヒータによって加熱された気化室の下端部に配置された一次フィルタの下面へ導入し、
流量調節された液体原料を前記一次フィルタに向けて滴下または流下し、
前記液体原料を、前記一次フィルタと前記液体原料との濡れ面において、ヒータからの熱によって気化するとともに、前記キャリアガスと混合させることによってミスト化し、
気化およびミスト化された前記液体原料を前記キャリアガスとともに前記気化室の上部から排出する液体原料の気化方法。 - ヒータにより加熱された気化室と、
前記気化室の下端部に配置され、ヒータにより加熱された一次フィルタと、
流量調節された液体原料を前記気化室の上方から前記一次フィルタに向けて滴下する液体原料供給部と、
キャリアガスを前記一次フィルタの下面へ導くキャリアガス導入路と、
前記キャリアガスおよび気化された前記液体原料との混合ガスを前記気化室の上部から排出するための原料導出路とを備えることを特徴とする気化器。 - 前記気化室の上端部に配置され、ヒータにより加熱された二次フィルタを更に備えており、
前記二次フィルタを通過した、前記キャリアガスおよび気化された前記液体原料との混合ガスが、前記原料導出路を通って前記気化室の上部から排出されることを特徴とする請求項2に記載の気化器。 - 前記液体原料供給部と前記気化室とが隔離され、これらの間に熱隔離用接続管が設けられていることを特徴とする請求項2または3に記載の気化器。
- ヒータにより加熱された前記キャリアガスの予熱用フィルタが、前記キャリアガス導入路に備えられていることを特徴とする請求項2〜4のいずれかに記載の気化器。
- ヒータにより加熱された気化室と、
前記気化室の下端部に配置され、ヒータにより加熱された一次フィルタと、
流量調節された液体原料を前記気化室の上方から毛細管を通じて前記一次フィルタの表面近傍まで供給する液体原料供給部と、
キャリアガスを前記一次フィルタの下面へ導くキャリアガス導入路と、
前記キャリアガスおよび気化された前記液体原料との混合ガスを前記気化室から排出するための原料導出路とを備えることを特徴とする気化器。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005300521A JP4601535B2 (ja) | 2005-09-09 | 2005-10-14 | 低温度で液体原料を気化させることのできる気化器 |
PCT/JP2006/317625 WO2007029726A1 (ja) | 2005-09-09 | 2006-09-06 | 低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器 |
EP06797521.9A EP1923485B1 (en) | 2005-09-09 | 2006-09-06 | Vaporizer. |
CN2006800012464A CN101061257B (zh) | 2005-09-09 | 2006-09-06 | 能够在低温度下使液体原料气化的液体原料的气化方法与采用了该方法的气化器 |
US11/577,634 US7975993B2 (en) | 2005-09-09 | 2006-09-06 | Method for vaporizing liquid material capable of vaporizing liquid material at low temperature and vaporizer using the same |
TW095133089A TW200714740A (en) | 2005-09-09 | 2006-09-07 | Method for the vaporization of liquid raw material which enables low-temperature vaporization of liquid raw material and vaporizer for the method |
KR1020077008521A KR101343784B1 (ko) | 2005-09-09 | 2007-04-13 | 저온에서 액체 원료를 기화시킬 수 있는 액체 원료의기화방법 및 당해 방법을 사용하는 기화기 |
US13/094,425 US8162298B2 (en) | 2005-09-09 | 2011-04-26 | Method for vaporizing liquid material capable of vaporizing liquid material at low temperature and vaporizer using the same |
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JP2005262911 | 2005-09-09 | ||
JP2005300521A JP4601535B2 (ja) | 2005-09-09 | 2005-10-14 | 低温度で液体原料を気化させることのできる気化器 |
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JP2007100207A true JP2007100207A (ja) | 2007-04-19 |
JP4601535B2 JP4601535B2 (ja) | 2010-12-22 |
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US (2) | US7975993B2 (ja) |
EP (1) | EP1923485B1 (ja) |
JP (1) | JP4601535B2 (ja) |
KR (1) | KR101343784B1 (ja) |
CN (1) | CN101061257B (ja) |
TW (1) | TW200714740A (ja) |
WO (1) | WO2007029726A1 (ja) |
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WO2009098815A1 (ja) * | 2008-02-07 | 2009-08-13 | Tokyo Electron Limited | 液体原料気化器及びそれを用いた成膜装置 |
WO2010038515A1 (ja) * | 2008-09-30 | 2010-04-08 | 東京エレクトロン株式会社 | 気化器およびそれを用いた成膜装置 |
WO2010098308A1 (ja) * | 2009-02-24 | 2010-09-02 | 株式会社アルバック | 有機化合物蒸気発生装置及び有機薄膜製造装置 |
US20110008539A1 (en) * | 2008-02-14 | 2011-01-13 | Ulvac,Inc. | Vapor generator and vapor deposition apparatus |
JP2014012888A (ja) * | 2012-05-27 | 2014-01-23 | Air Products And Chemicals Inc | フィルタを有する容器 |
KR20140085354A (ko) | 2012-12-27 | 2014-07-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기화 시스템 |
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US20090047417A1 (en) * | 2007-03-30 | 2009-02-19 | Barnes Michael S | Method and system for vapor phase application of lubricant in disk media manufacturing process |
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2005
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2006
- 2006-09-06 US US11/577,634 patent/US7975993B2/en active Active
- 2006-09-06 CN CN2006800012464A patent/CN101061257B/zh active Active
- 2006-09-06 WO PCT/JP2006/317625 patent/WO2007029726A1/ja active Application Filing
- 2006-09-06 EP EP06797521.9A patent/EP1923485B1/en not_active Expired - Fee Related
- 2006-09-07 TW TW095133089A patent/TW200714740A/zh unknown
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2007
- 2007-04-13 KR KR1020077008521A patent/KR101343784B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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CN101061257B (zh) | 2010-06-23 |
JP4601535B2 (ja) | 2010-12-22 |
US20090065066A1 (en) | 2009-03-12 |
TW200714740A (en) | 2007-04-16 |
KR20080042032A (ko) | 2008-05-14 |
EP1923485A1 (en) | 2008-05-21 |
US7975993B2 (en) | 2011-07-12 |
US20110197816A1 (en) | 2011-08-18 |
US8162298B2 (en) | 2012-04-24 |
WO2007029726A1 (ja) | 2007-03-15 |
CN101061257A (zh) | 2007-10-24 |
EP1923485B1 (en) | 2015-10-28 |
KR101343784B1 (ko) | 2013-12-20 |
TWI406965B (ja) | 2013-09-01 |
EP1923485A4 (en) | 2009-07-15 |
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