JP2014515183A - めっきされた支持基板を有する固体光電子素子 - Google Patents
めっきされた支持基板を有する固体光電子素子 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 239000007787 solid Substances 0.000 title claims abstract description 6
- 230000005693 optoelectronics Effects 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 35
- 229910002601 GaN Inorganic materials 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 64
- 238000005516 engineering process Methods 0.000 description 34
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910005887 NiSn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【選択図】図4
Description
Claims (21)
- 発光ダイを製造する方法であって、
成長基板上に発光構造体を形成することと、
第1の側面に、第1の半導体材料に電気的に結合される埋め込み接点を形成することと、
前記第1の側面に金属をめっきすることであって、前記めっきされた金属が、前記発光構造体の反りを抑制するために十分な厚さを有する、めっきされた基板を形成することと、を含む、方法。 - 前記第1の半導体材料がp型窒化ガリウム(「p−GaN」)材料を含み、第2の半導体材料がn型窒化ガリウム(「n−GaN」)材料を含み、活性領域が窒化インジウムガリウム(「InGaN」)材料を含み、
前記埋め込み接点が、前記p−GaN材料に電気的に結合されるp接点を備え、
前記方法が、担体を前記めっきされた基板に取り付けることと、前記成長基板を前記発光構造体から取り除くことと、前記n−GaN材料に電気的に結合される外部接点を形成することと、を更に含む、請求項1に記載の方法。 - 前記埋め込み接点が、反射性材料であり、
前記めっきされた基板が、銅を含み、
前記めっきされた基板の前記厚さが、およそ50〜150ミクロンである、請求項2に記載の方法。 - 前記埋め込み接点上に障壁材料を堆積させることと、
前記障壁材料上にシード材料を形成することと、
前記金属を前記シード材料上にめっきすることと、を更に含む、請求項1に記載の方法。 - 前記発光構造体の前記第1の側面に前記金属をめっきすることが、障壁材料を前記埋め込み接点上に堆積させることと、シード材料を前記障壁材料上に形成することと、前記金属を前記シード材料上にめっきすることと、を含む、請求項1に記載の方法。
- 前記めっきされた基板の前記厚さが、およそ50〜300ミクロンである、請求項1に記載の方法。
- 前記めっきされた基板の前記厚さが、およそ75〜150ミクロンである、請求項1に記載の方法。
- 担体を取り除くことと、個々のSSL素子を形成するように前記めっきされた基板、障壁材料、前記埋め込み接点、および前記発光構造体を貫通してダイシングすることと、を更に含む、請求項1に記載の方法。
- 前記成長基板が、少なくともおよそ6インチの直径である、請求項1に記載の方法。
- 前記発光構造体が、第1の半導体材料、第2の半導体材料、および前記第1の半導体材料と前記第2の半導体材料との間の活性領域を含む、請求項1に記載の方法。
- 固体照明素子を製造する方法であって、
発光構造体を概ね円形の成長基板上に形成することであって、前記成長基板および前記発光構造体が、少なくともおよそ6インチの直径であることと、
前記発光構造体内に、前記発光構造体を個々のメサに分離する複数のトレンチをエッチングすることと、
前記個々のメサ上および前記トレンチ内にめっきされた基板を形成して、前記めっきされた基板の第1の側面が前記メサの方に向き、前記第1の側面と反対の第2の側面が前記メサから外方に向くようにすることと、
前記めっきされた基板の前記第2の側面に担体を取り付けることと、
前記成長基板を前記発光構造体から取り除くことと、を含む、方法。 - 前記めっきされた基板を形成する前に前記発光構造体の前記第1の側面に埋め込み接点を形成することと、
障壁を前記埋め込み接点上に形成することであって、前記トレンチをエッチングすることが、前記発光構造体、前記埋め込み接点、および前記障壁を貫通するV字形状のトレンチを形成することを含むことと、を更に含む、請求項11に記載の方法。 - 前記複数のトレンチをエッチングすることが、前記成長基板の一部分を露出させるように前記発光構造体を貫通してエッチングすることを含む、請求項11に記載の方法。
- 前記発光構造体内に前記複数のトレンチをエッチングすることが、前記成長基板に浸透する湿式エッチングを使用することを含む、請求項11に記載の方法。
- 前記発光構造体を前記めっきされた基板から電気的に絶縁する誘電体ライナーを前記複数のトレンチ内に形成することを更に含む、請求項11に記載の方法。
- 複数の個々の固体照明素子を有するウエハであって、
第1の側面上の第1の半導体材料、第2の側面上の第2の半導体材料、および前記第1の半導体材料と前記第2の半導体材料との間の活性領域を含む、発光構造体と、
前記第1の側面の埋め込み接点と、
前記埋め込み接点上に形成されるめっきされた基板であって、前記発光構造体の反りを抑制するために十分な厚さを有する、めっきされた基板と、
前記発光構造体の前記第2の側面上に形成される複数の外部接点と、を備え、
少なくともおよそ150ミリメートルの直径である、ウエハ。 - およそ150〜300ミリメートルの直径である、請求項16に記載のウエハ。
- 前記ウエハが前記発光構造体内にトレンチを有し、前記めっきされた基板が前記めっきされた基板から前記トレンチの中へと突出する、複数の突起部を備える、請求項16に記載のウエハ。
- 前記めっきされた基板と前記埋め込み接点との間に障壁材料および反射性材料のうちの少なくとも1つを更に備える、請求項16に記載のウエハ。
- 前記めっきされた基板が約50〜300μmの厚さを有する、請求項16に記載のウエハ。
- 前記めっきされた基板が約100〜150μmの厚さを有する、請求項16に記載のウエハ。
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