JP2014030033A - 有機光起電力素子 - Google Patents
有機光起電力素子 Download PDFInfo
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- JP2014030033A JP2014030033A JP2013189215A JP2013189215A JP2014030033A JP 2014030033 A JP2014030033 A JP 2014030033A JP 2013189215 A JP2013189215 A JP 2013189215A JP 2013189215 A JP2013189215 A JP 2013189215A JP 2014030033 A JP2014030033 A JP 2014030033A
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- KJOLVZJFMDVPGB-UHFFFAOYSA-N perylenediimide Chemical compound C=12C3=CC=C(C(NC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)NC(=O)C4=CC=C3C1=C42 KJOLVZJFMDVPGB-UHFFFAOYSA-N 0.000 description 1
- INAAIJLSXJJHOZ-UHFFFAOYSA-N pibenzimol Chemical compound C1CN(C)CCN1C1=CC=C(N=C(N2)C=3C=C4NC(=NC4=CC=3)C=3C=CC(O)=CC=3)C2=C1 INAAIJLSXJJHOZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/549—Organic PV cells
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Abstract
【解決手段】一般に感光性有機オプトエレクトロニクス素子に関する。より詳細には、それは有機光起電力素子、例えば有機太陽電池を対象とする。さらに、それは、直列の、複数の積層型サブセルを備える、最適化された有機太陽電池を対象とする。厚さが最適化された複数の積層型サブセルを備え、電子障壁層を用いる光起電力セルを製造することにより、大きな電力変換効率が実現される。
【選択図】図1
Description
Claims (39)
- アノード;
電子ドナー層及び電子ドナー層と接する電子アクセプタ層を各サブセルが備える、直列の複数のサブセル、
サブセルを隔てる電子−ホール再結合ゾーン、及び
カソード
を備え、各サブセルにより発生する電流がほぼ等しい感光性有機オプトエレクトロニクス素子。 - 励起子障壁層が電子アクセプタ層とカソードの間に位置する請求項1に記載の素子。
- 励起子障壁層がBCPを含む請求項2に記載の素子。
- 励起子障壁層がAlq2OPHを含む請求項2に記載の素子。
- アノード平滑化層が電子ドナー層とアノードの間に位置する請求項1に記載の素子。
- アノード平滑化層がPEDOT:PSSを含む請求項1に記載の素子。
- 電子ドナー層がフタロシアニン又はポルフィリンを含み、電子アクセプタ層がペリレン、ナフタレン、フラーレン又はナノチューブを含む請求項1に記載の素子。
- アノードが透明導電性酸化物から選択される請求項1に記載の素子。
- アノードがITOから選択される請求項8に記載の素子。
- 電子−ホール再結合ゾーンが半透明金属層である請求項1に記載の素子。
- 電子−ホール再結合ゾーンが、Ag、Li、LiF、Al、Ti、及びSnの層から選択される請求項1に記載の素子。
- 電子−ホール再結合ゾーンがAgの層である請求項11に記載の素子。
- 電子−ホール再結合ゾーンが約20Åより薄い請求項1に記載の素子。
- 金属層がナノ粒子からなる請求項10に記載の素子。
- 電子−ホール再結合ゾーンが電子活性欠陥領域を含む請求項1に記載の素子。
- 電子輸送層がPTCBIであり、
ホール輸送層がCuPcであり;
電子−ホール再結合ゾーンがAgであり、また
励起子障壁層がBCPである、
請求項2に記載の素子。 - 電子輸送層がフラーレンであり、
ホール輸送層がCuPcであり;
電子−ホール再結合ゾーンがAgであり、また
励起子障壁層がBCPである、
請求項2に記載の素子。 - 外部電力変換効率が、1sunの照射で少なくとも1%である請求項1に記載の素子。
- アノード;
光伝導性有機半導体材料からなるホール輸送層;
フラーレンを含む、ホール輸送層上の電子輸送層;
励起子障壁層;及び
カソード;
を備える感光性有機オプトエレクトロニクス素子。 - 励起子障壁層が電子輸送層とカソードの間に位置する請求項19に記載の素子。
- 励起子障壁層がBCPを含む請求項20に記載の素子。
- 励起子障壁層がAlq2OPHを含む請求項20に記載の素子。
- アノード平滑化層が電子ドナー層とアノードの間に位置する請求項19に記載の素子。
- アノード平滑化層がPEDOT:PSSを含む請求項23に記載の素子。
- PEDOT:PSSがプラズマで処理された請求項24に記載の素子。
- フラーレンがC60からC96の範囲の大きさから選択される請求項19に記載の素子。
- フラーレンがナノチューブである請求項19に記載の素子。
- アノードが透明導電性酸化物から選択される請求項19に記載の素子。
- アノードがITOから選択される請求項28に記載の素子。
- 電子輸送層がC60であり、
ホール輸送層がCuPcであり、また
励起子障壁層がBCPである、
請求項20に記載の素子。 - 外部電力変換効率が少なくとも約3.6%である請求項19に記載の素子。
- 電子輸送層、ホール輸送層、及び励起子障壁層が、導波路を形成する2つの平行反射平面の間に配置される請求項19に記載の素子。
- 2つの反射表面の1つが素子に光を入射させる開口部をもつ請求項32に記載の素子。
- 反射表面に平行な方向から光が素子に入れるように、2つの反射表面の間に透明な孔をもつ請求項33に記載の素子。
- フラーレンを含む電子輸送層を少なくとも1個のサブセルが含む、複数の感光性オプトエレクトロニクスサブセルを備える積層型感光性有機オプトエレクトロニクス素子。
- サブセルが励起子障壁層及び電子輸送層に隣接するホール輸送層をさらに含む請求項35に記載のサブセル。
- 励起子障壁層がBCPを含み、電子輸送層に隣接する請求項36に記載の素子。
- 電子輸送層がC60であり、
ホール輸送層がCuPcであり、また
励起子障壁層がBCPである、
請求項35に記載の素子。 - アノード、ホール輸送層、フラーレンを含む電子輸送層、励起子障壁層及びカソードを備える感光性有機オプトエレクトロニクス素子の製造方法であって、
(a)アノード上にホール輸送層を堆積させるステップ、
(b)ホール輸送層上に電子輸送層を堆積させるステップ、
(c)電子輸送層上に励起子障壁層を堆積させるステップ、及び
(d)励起子障壁層上にカソードを堆積させるステップ
を含む方法。
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JP5855061B2 (ja) | 2016-02-09 |
EP1396033A4 (en) | 2011-05-18 |
IN2009DE01615A (ja) | 2009-05-15 |
HK1073016A1 (en) | 2005-09-16 |
AU2002329183A1 (en) | 2002-12-23 |
CN100426529C (zh) | 2008-10-15 |
JP2009188409A (ja) | 2009-08-20 |
JP2016028436A (ja) | 2016-02-25 |
MXPA03011428A (es) | 2005-03-07 |
MX247357B (es) | 2007-07-19 |
JP2004523129A (ja) | 2004-07-29 |
CN1579023A (zh) | 2005-02-09 |
WO2002101838A1 (en) | 2002-12-19 |
IN2003DE02037A (ja) | 2005-12-16 |
TW556448B (en) | 2003-10-01 |
JP2010021566A (ja) | 2010-01-28 |
BR0210996A (pt) | 2004-06-08 |
JP5840826B2 (ja) | 2016-01-06 |
KR100915530B1 (ko) | 2009-09-04 |
EP1396033A1 (en) | 2004-03-10 |
EP3118907A1 (en) | 2017-01-18 |
JP2013225698A (ja) | 2013-10-31 |
KR20040012917A (ko) | 2004-02-11 |
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