JP2013535109A - 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 - Google Patents
光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 Download PDFInfo
- Publication number
- JP2013535109A JP2013535109A JP2013515583A JP2013515583A JP2013535109A JP 2013535109 A JP2013535109 A JP 2013535109A JP 2013515583 A JP2013515583 A JP 2013515583A JP 2013515583 A JP2013515583 A JP 2013515583A JP 2013535109 A JP2013535109 A JP 2013535109A
- Authority
- JP
- Japan
- Prior art keywords
- plane
- region
- gallium
- nitrogen containing
- scribe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 34
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 230000003287 optical effect Effects 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 34
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 238000000605 extraction Methods 0.000 description 15
- 238000005520 cutting process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【選択図】図7
Description
本出願は、米国仮出願No.61/356,473号(出願日:2010年6月18日)に対する優先権を主張する。本明細書中、同出願を参考のため及び全ての目的のために援用する。
Claims (18)
- ガリウム及び窒素含有基板であって、
5つを超えない表面領域からなる三角形形状に構成された一定厚さの材料、
を含み、
前記5つの表面領域は、それぞれ第1の等価結晶面から構成された3つの表面領域を含み、
前記3つの表面領域を除く前記5つの表面領域は、第2の等価結晶面から構成された2つの表面領域を含む、
基板。 - 前記第1の等価面は、m面又はa面である、請求項1に記載の基板。
- 前記第2の等価面はc面である、請求項1に記載の基板。
- 前記3つの表面領域は、それぞれ第1の等価面の近傍に配置されたそれぞれのスクライブから構成される、請求項1に記載の基板。
- 前記第1の等価面は、それぞれa面上に構成される、請求項1に記載の基板。
- 前記2つの表面領域は相互に平行である、請求項1に記載の基板。
- ガリウム及び窒素含有基板であって、
6個を超えない表面領域からなる菱形形状に構成された一定厚さの材料、
を含み、
前記6個の表面領域は、それぞれ第1の等価結晶面から構成された4つの表面領域を含み、
前記4つの表面領域を除く前記6個の表面領域は、第2の等価結晶面から構成された2つの表面領域を含む、
基板。 - 前記菱形形状の前記4つの表面領域のうちいずれの2つの表面領域の間も90度で交差しない、請求項7に記載の基板。
- 前記第1の等価面は、m面又はa面である、請求項7に記載の基板。
- 前記第2の等価面はc面である、請求項7に記載の基板。
- 前記4つの表面領域は、それぞれ第1の等価面の近傍に配置されたそれぞれのスクライブから構成される、請求項7に記載の基板。
- 前記第1の等価面は、それぞれa面上に構成される、請求項7に記載の基板。
- 前記2つの表面領域は、相互に平行である、請求項1に記載の基板。
- 少なくとも1つのダイをガリウム及び窒素含有基板から分離する方法であって、
c面に構成された第1の表面領域と、前記c面に構成された第2の表面領域とを有するガリウム及び窒素含有基板を提供する工程と、
第1のm面領域を露出させるために第1のスクライブ領域を提供する工程と、
第2のm面領域を露出させるために第2のスクライブ領域を提供する工程と、
第3のm面領域を露出させるために第3のスクライブ領域を提供する工程と、
少なくとも前記第1のスクライブ領域、前記第2のスクライブ領域及び前記第3のスクライブ領域を用いて前記ダイを分離する工程と、
を含む、方法。 - 少なくとも1つのダイをガリウム及び窒素含有基板から分離するための方法であって、前記ガリウム及び窒素含有基板は、c面に構成された第1の表面領域と、前記c面に構成された第2の表面領域とを有し、前記方法は、少なくとも第1のm面領域、第2のm面領域および第3のm面領域を露出させて前記少なくとも1つのダイを構成する、方法。
- 少なくとも1つのダイをガリウム及び窒素含有基板から分離する方法であって、
c面に構成された第1の表面領域と、前記c面に構成された第2の表面領域とを有するガリウム及び窒素含有基板を提供する工程と、
少なくとも第1のa面領域、第2のa面領域及び第3のa面領域を露出させて、前記少なくとも1つのダイを構成する工程、
を含む、方法。 - 少なくとも1つのダイをガリウム及び窒素含有基板から分離する方法であって、前記ガリウム及び窒素含有基板は、c面に構成された第1の表面領域と、前記c面に構成された第2の表面領域とを含み、前記方法は、
少なくとも第1のm面領域及び第2のm面領域を露出して、第1の実質的に平行な配置を構成する、工程と、
少なくとも第3のm面領域及び第4のm面領域を露出して、第2の実質的に平行な配置を構成する、工程と、
少なくとも1つのダイを除去する工程と、
を含む、方法。 - 少なくとも1つのダイをガリウム及び窒素含有基板から分離する方法であって、前記ガリウム及び窒素含有基板は、c面に構成された第1の表面領域と、前記c面に構成された第2の表面領域とを有し、前記方法は、
少なくとも第1のa面領域及び第2のa面領域を露出して、第1の実質的に平行な配置を構成する、工程と、
少なくとも第3のa面領域及び第4のa面領域を露出して、第2の実質的に平行な配置を構成する、工程と、
少なくとも1つのダイを除去する工程と、
を含む、方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35647310P | 2010-06-18 | 2010-06-18 | |
US61/356,473 | 2010-06-18 | ||
US13/163,482 US8293551B2 (en) | 2010-06-18 | 2011-06-17 | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US13/163,482 | 2011-06-17 | ||
PCT/US2011/041106 WO2011160129A2 (en) | 2010-06-18 | 2011-06-20 | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015139276A Division JP6073988B2 (ja) | 2010-06-18 | 2015-07-12 | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013535109A true JP2013535109A (ja) | 2013-09-09 |
JP5870097B2 JP5870097B2 (ja) | 2016-02-24 |
Family
ID=45348929
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013515583A Active JP5870097B2 (ja) | 2010-06-18 | 2011-06-20 | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 |
JP2015139276A Active JP6073988B2 (ja) | 2010-06-18 | 2015-07-12 | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015139276A Active JP6073988B2 (ja) | 2010-06-18 | 2015-07-12 | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8293551B2 (ja) |
JP (2) | JP5870097B2 (ja) |
DE (1) | DE112011102068T5 (ja) |
WO (1) | WO2011160129A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160148304A (ko) * | 2015-06-16 | 2016-12-26 | 삼성전자주식회사 | 발광 소자 패키지 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI470823B (zh) * | 2009-02-11 | 2015-01-21 | Epistar Corp | 發光元件及其製造方法 |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
KR101368906B1 (ko) | 2009-09-18 | 2014-02-28 | 소라, 인코포레이티드 | 전력 발광 다이오드 및 전류 밀도 작동 방법 |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
KR101909633B1 (ko) | 2011-12-30 | 2018-12-19 | 삼성전자 주식회사 | 레이저 스크라이빙을 이용한 발광소자 칩 웨이퍼의 절단 방법 |
CN104247052B (zh) | 2012-03-06 | 2017-05-03 | 天空公司 | 具有减少导光效果的低折射率材料层的发光二极管 |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US8802471B1 (en) | 2012-12-21 | 2014-08-12 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
JP2015207752A (ja) * | 2014-04-08 | 2015-11-19 | パナソニックIpマネジメント株式会社 | 窒化物半導体発光ダイオード |
GB201418810D0 (en) | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
GB201418772D0 (en) * | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
KR102599333B1 (ko) | 2016-12-23 | 2023-11-06 | 엘지디스플레이 주식회사 | 광원 모듈 및 이를 포함하는 백라이트 유닛과 액정 표시 장치 |
DE102017120037A1 (de) * | 2017-08-31 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierender Halbleiterchip-Array |
DE102022123683A1 (de) | 2022-09-15 | 2024-03-21 | Ams-Osram International Gmbh | Optoelektronisches bauelement und verfahren zu dessen herstellung |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982587A (ja) * | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | 非方形電子チップの製造方法 |
JPH11340507A (ja) * | 1998-05-26 | 1999-12-10 | Matsushita Electron Corp | 半導体発光素子およびその製造方法 |
JPH11340576A (ja) * | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体デバイス |
JP2001177146A (ja) * | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | 三角形状の半導体素子及びその製法 |
JP2003318441A (ja) * | 2001-07-24 | 2003-11-07 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2009071162A (ja) * | 2007-09-14 | 2009-04-02 | Rohm Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2009218284A (ja) * | 2008-03-07 | 2009-09-24 | Sumitomo Electric Ind Ltd | 窒化物半導体レーザを作製する方法 |
JP2010114465A (ja) * | 2010-01-18 | 2010-05-20 | Sharp Corp | 窒化物半導体チップの製造方法および窒化物半導体チップ |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3557011B2 (ja) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | 半導体発光素子、及びその製造方法 |
US5764674A (en) | 1996-06-28 | 1998-06-09 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
WO1998019375A1 (fr) | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent |
US6104450A (en) | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
JPH10335750A (ja) | 1997-06-03 | 1998-12-18 | Sony Corp | 半導体基板および半導体装置 |
US6858882B2 (en) | 2000-09-08 | 2005-02-22 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and optical device including the same |
US6936488B2 (en) | 2000-10-23 | 2005-08-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
JP2002190635A (ja) | 2000-12-20 | 2002-07-05 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
JP3801125B2 (ja) | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法 |
US6498355B1 (en) | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
US6809781B2 (en) | 2002-09-24 | 2004-10-26 | General Electric Company | Phosphor blends and backlight sources for liquid crystal displays |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US7341880B2 (en) | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
US7128849B2 (en) | 2003-10-31 | 2006-10-31 | General Electric Company | Phosphors containing boron and metals of Group IIIA and IIIB |
US20060038542A1 (en) | 2003-12-23 | 2006-02-23 | Tessera, Inc. | Solid state lighting device |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
US6956246B1 (en) | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
KR100661708B1 (ko) | 2004-10-19 | 2006-12-26 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US7858408B2 (en) | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
JP5706601B2 (ja) | 2005-03-10 | 2015-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 平坦な半極性窒化ガリウムの成長技術 |
US7358543B2 (en) | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
US8148713B2 (en) | 2008-04-04 | 2012-04-03 | The Regents Of The University Of California | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes |
JP5301988B2 (ja) | 2005-06-21 | 2013-09-25 | 独立行政法人科学技術振興機構 | 偏光発光ダイオードの作製に関するパッケージ技術 |
JP4656410B2 (ja) | 2005-09-05 | 2011-03-23 | 住友電気工業株式会社 | 窒化物半導体デバイスの製造方法 |
US8044430B2 (en) | 2006-01-18 | 2011-10-25 | Panasonic Corporation | Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP4819577B2 (ja) | 2006-05-31 | 2011-11-24 | キヤノン株式会社 | パターン転写方法およびパターン転写装置 |
US20090273005A1 (en) | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
JP2008141118A (ja) | 2006-12-05 | 2008-06-19 | Rohm Co Ltd | 半導体白色発光装置 |
TW200834962A (en) | 2007-02-08 | 2008-08-16 | Touch Micro System Tech | LED array package structure having Si-substrate and method of making the same |
WO2008100505A1 (en) | 2007-02-12 | 2008-08-21 | The Regents Of The University Of California | Optimization of laser bar orientation for nonpolar and semipolar (ga,ai,in,b)n diode lasers |
US7843980B2 (en) | 2007-05-16 | 2010-11-30 | Rohm Co., Ltd. | Semiconductor laser diode |
JP4614988B2 (ja) | 2007-05-31 | 2011-01-19 | シャープ株式会社 | 窒化物系半導体レーザ素子及びその製造方法 |
EP2003696B1 (en) | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
US7733571B1 (en) | 2007-07-24 | 2010-06-08 | Rockwell Collins, Inc. | Phosphor screen and displays systems |
JP2009081374A (ja) | 2007-09-27 | 2009-04-16 | Rohm Co Ltd | 半導体発光素子 |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US20100006873A1 (en) | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
CN101621101A (zh) | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
JP2011530194A (ja) | 2008-08-04 | 2011-12-15 | ソラア インコーポレーテッド | 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス |
US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US7923741B1 (en) | 2009-01-05 | 2011-04-12 | Lednovation, Inc. | Semiconductor lighting device with reflective remote wavelength conversion |
US20110056429A1 (en) | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
-
2011
- 2011-06-17 US US13/163,482 patent/US8293551B2/en active Active
- 2011-06-20 DE DE112011102068T patent/DE112011102068T5/de not_active Withdrawn
- 2011-06-20 WO PCT/US2011/041106 patent/WO2011160129A2/en active Application Filing
- 2011-06-20 JP JP2013515583A patent/JP5870097B2/ja active Active
-
2015
- 2015-07-12 JP JP2015139276A patent/JP6073988B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982587A (ja) * | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | 非方形電子チップの製造方法 |
JPH11340507A (ja) * | 1998-05-26 | 1999-12-10 | Matsushita Electron Corp | 半導体発光素子およびその製造方法 |
JPH11340576A (ja) * | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体デバイス |
JP2001177146A (ja) * | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | 三角形状の半導体素子及びその製法 |
JP2003318441A (ja) * | 2001-07-24 | 2003-11-07 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2009071162A (ja) * | 2007-09-14 | 2009-04-02 | Rohm Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2009218284A (ja) * | 2008-03-07 | 2009-09-24 | Sumitomo Electric Ind Ltd | 窒化物半導体レーザを作製する方法 |
JP2010114465A (ja) * | 2010-01-18 | 2010-05-20 | Sharp Corp | 窒化物半導体チップの製造方法および窒化物半導体チップ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160148304A (ko) * | 2015-06-16 | 2016-12-26 | 삼성전자주식회사 | 발광 소자 패키지 |
KR102306671B1 (ko) | 2015-06-16 | 2021-09-29 | 삼성전자주식회사 | 발광 소자 패키지 |
Also Published As
Publication number | Publication date |
---|---|
US8293551B2 (en) | 2012-10-23 |
CN102947492A (zh) | 2013-02-27 |
DE112011102068T5 (de) | 2013-03-28 |
JP2016006881A (ja) | 2016-01-14 |
WO2011160129A3 (en) | 2012-03-01 |
JP6073988B2 (ja) | 2017-02-01 |
WO2011160129A2 (en) | 2011-12-22 |
US20110315999A1 (en) | 2011-12-29 |
JP5870097B2 (ja) | 2016-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6073988B2 (ja) | 光学デバイス用のガリウム及び窒素含有三角形又は菱形形状の構成 | |
US11411135B2 (en) | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices | |
US8313964B2 (en) | Singulation method and resulting device of thick gallium and nitrogen containing substrates | |
US20210104503A1 (en) | Wafer level packaging of light emitting diodes (leds) | |
US9076926B2 (en) | Gallium and nitrogen containing trilateral configuration for optical devices | |
KR101509834B1 (ko) | 반도체 발광 소자 및 그 제조 방법 | |
US20120171791A1 (en) | Method for fabricating light emitting diode chip | |
TWI473269B (zh) | 具有不平整主動層之發光裝置及其形成方法 | |
US8597967B1 (en) | Method and system for dicing substrates containing gallium and nitrogen material | |
KR20130012376A (ko) | 반도체 발광소자 제조방법 | |
CN105428486A (zh) | 一种具有三维p-n结的半导体发光二极管芯片及其制备方法 | |
TWI606608B (zh) | 發光裝置 | |
JP5599675B2 (ja) | Ledデバイスチップの製造方法 | |
TWI420706B (zh) | 發光二極體及其製造方法 | |
JP6628727B2 (ja) | 加工されたサブストレートを用いた半導体発光デバイス及びその製造方法 | |
CN102947492B (zh) | 用于光学器件的含镓和氮的三角形或菱形的配置 | |
US8911518B1 (en) | Method and system for dicing substrates containing gallium and nitrogen material with conductive core via structures | |
JP2014160797A (ja) | 発光ダイオードチップ及びその製造方法 | |
JP2013038208A (ja) | 発光素子およびその製造方法 | |
CN102655196B (zh) | 氮化物系半导体发光结构 | |
TWI546978B (zh) | 半導體發光元件及其製作方法 | |
TW201242084A (en) | Chip structure for enhancing light extraction efficiency and process using the same | |
TWI387137B (zh) | 製作發光二極體結構的方法 | |
KR20120103239A (ko) | 발광 다이오드 칩 및 그의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140416 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140912 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141212 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150110 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150713 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150902 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150918 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20151013 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160108 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5870097 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |