JP2013531380A - インターポーザおよびインターポーザに孔を生成する方法 - Google Patents
インターポーザおよびインターポーザに孔を生成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 21
- 239000011521 glass Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000002585 base Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 230000006378 damage Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 238000000708 deep reactive-ion etching Methods 0.000 claims 1
- 238000010304 firing Methods 0.000 claims 1
- 239000003365 glass fiber Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
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Abstract
Description
ガラスは、1620℃で、Pt/Irるつぼ中で、不可避の不純物は別として従来の実質的にアルカリを含まない原料から溶融された。溶融物はこの温度で1.5時間の間清澄され、次に、誘導加熱白金るつぼに注がれ、均質化のために1550℃で30分間撹拌された。
・熱膨張係数α20/300(10−6/K)
・密度ρ(g/cm3)
・DIN52324に従った膨張計によるガラス転移温度Tg(℃)
・104dPa・sの粘性での温度(T4(℃)と呼ばれる)
・Vogel−Fulcher−Tammann式から計算された102dPa・sの粘性での温度(T2(℃)と呼ばれる)
・50mm×50mm×2mmの寸法であり、すべての側面が研磨されたガラス・ボードの95℃で24時間の間5%塩酸で処理した後の重量損失(材料除去値)としての「HCl」耐酸性(mg/cm2)
・50mm×50mm×2mmの寸法であり、すべての側面が研磨されたガラス・ボードの23℃で20分間10%NH4F・HFで処理した後の重量損失(材料除去値)としての緩衝フッ化水素酸への「BHF」耐性(mg/cm2)
・屈折率nd
本発明によるガラスの組成(酸化物に基づいた重量%)および基本的性質
・2.8×10−6/Kと3.8×10−6/Kとの間、好ましい実施形態では、≦3.6×10−6/K、特に好ましい実施形態では、<3.2×10−6/Kの熱膨張係数α20/300であり、したがって、アモルファス・シリコンの膨張挙動およびさらに一層多結晶シリコンの膨張挙動と一致する。
・Tg>700℃であり、高いガラス転移温度、すなわち、高温耐性である。これは、生産関連収縮(「圧縮」)をできるだけ低くするのに、およびアモルファスSi層を被覆し、続いてそれをアニーリングするための基板としてガラスを使用するのに必須である。
・ρ<2.600g/cm3であり、低密度である。
・1350℃以下の104dPa・sの粘性での温度(作業点VA)、ならびに熱成形および溶解性に関して好適な粘性特性である1720℃以下の102dPa・sの粘性での温度である。
・nd≦1.526であり、低い屈折率である。
・緩衝フッ化水素酸溶液に対する良好な耐性からとりわけ明白であるように、高い耐化学性である。
Claims (17)
- CPUチップと回路ボードとの間の電気的接続のためのインターポーザであって、
ガラスで製作されたボード形状ベース基板(1)が第1のボード表面と第2のボード表面とを有し、
前記ベース基板(1)が3.1×10−6/Kから3.4×10−6/Kの範囲の熱膨張係数を有し、
前記ベース基板が前記ボード表面に対して横断的に多数の孔(12)を有し、孔の数が10cm−2から10000cm−2の範囲にわたり、
20μmから200μmの範囲にわたることができる直径を有する孔(12)があり、
前記孔の中心間を測定したときの前記孔(12)の距離が50μmから700μmの範囲にあり、
前記CPUチップのための接続点を形成するために、前記第1のボード表面を進み、前記孔(12)の中に、およびそこを通って(14)前記第2のボード表面まで延びる導電性経路(13)があること
を特徴とするインターポーザ。 - 前記ベース基板の前記ガラスのアルカリ含有量が700ppm未満である、請求項1に記載のインターポーザ。
- 前記ベース基板の前記ガラスのヒ素またはアンチモンの含有量が50ppm未満である、請求項1または2に記載のインターポーザ。
- 3.2×10−6/Kの熱膨張係数を有する、請求項1乃至3のいずれか1項に記載のインターポーザ。
- 前記基板(1)のボード厚が30μmから1000μmの範囲にわたる、請求項1乃至4のいずれか1項に記載のインターポーザ。
- 孔の数が1000cm−2から3000cm−2の範囲にわたる、請求項1乃至5のいずれか1項に記載のインターポーザ。
- 前記孔(12)の前記直径が100μmを超えない、請求項1乃至6のいずれか1項に記載のインターポーザ。
- 前記孔(12)(12)の中心間間隔が150μmから400μmの範囲にわたる、請求項1乃至7のいずれか1項に記載のインターポーザ。
- 前記孔(12)の縁部間距離が少なくとも30μmである、請求項1乃至8のいずれか1項に記載のインターポーザ。
- 前記ボード形状ベース基板(1)が異なる直径の孔(12)を有する、請求項1乃至9のいずれか1項に記載のインターポーザ。
- 以下の寸法比、すなわち、
1から10の範囲にわたる、孔直径に対する前記孔の中心間距離、
1から9の範囲にわたる、孔直径に対する前記孔の縁部間距離、
0.1から25の範囲にわたる、孔直径に対する前記基板のボード厚
が満たされる、請求項1乃至10のいずれか1項に記載のインターポーザ。 - 前記ベース基板の前記ボード表面と前記孔の内壁との間の前記孔の前記縁部が不完全円形である、請求項1乃至11のいずれか1項に記載のインターポーザ。
- 請求項1乃至12のいずれか1項に記載のインターポーザに孔を生成する方法であって、
a)穿孔されるべきガラスのベース基板(1)を用意するステップと、
b)前記ベース基板(1)の所定の穿孔点(10)に多数のレーザビーム・アレイ(4)を位置合わせするステップと、
c)前記ガラスが少なくとも部分的に透明である1600nmと200nmとの間の波長範囲にあり、それぞれの繊維状チャネル(11)に沿って前記ガラスの局所非熱破壊を引き起こす放射強度をもつ集束レーザ・パルス(41)を発射するステップと、
d)前記孔(12)の所望の直径まで前記繊維状チャネル(11)を広げるステップと
を含む、方法。 - 前記繊維状チャネル(11)の前記拡大が、誘電破壊による穿孔材料の電熱加熱と蒸発とによって達成される、請求項13に記載の方法。
- 前記繊維状チャネル(11)の前記拡大が反応性ガスによって達成される、請求項13に記載の方法。
- 請求項1乃至12のいずれか1項に記載のインターポーザに孔を生成する方法であって、
a)ガラスで製作されたベース基板(1)に、RF結合材料でドットの形態で所期の穿孔点(10)に両側印刷するステップと、
b)板形状RF電極(2、3)が両側に配置された処理空間に前記印刷済みベース基板(1)を導入するステップと、
c)ドットの形態で付けられた前記RF結合材料を、ベース基板材料がそこで軟化するまで主として加熱するRFエネルギーに前記ベース基板(1)をさらすステップと、
d)前記電極(2、3)間に高電圧を発生させて、前記RF結合点から発出する誘電破壊の結果として狭いチャネル(11)を生成するステップと
を含む、方法。 - 孔(12)への誘電破壊に由来する前記狭いチャネル(11)の拡大が深掘り反応性イオン・エッチングによって達成される、請求項16に記載の方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015146401A (ja) * | 2014-02-04 | 2015-08-13 | 大日本印刷株式会社 | ガラスインターポーザー |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI547454B (zh) * | 2011-05-31 | 2016-09-01 | 康寧公司 | 於玻璃中高速製造微孔洞的方法 |
EP2754524B1 (de) | 2013-01-15 | 2015-11-25 | Corning Laser Technologies GmbH | Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie |
EP2781296B1 (de) | 2013-03-21 | 2020-10-21 | Corning Laser Technologies GmbH | Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser |
CN105189024B (zh) | 2013-04-04 | 2018-01-30 | Lpkf激光电子股份公司 | 用于分离基板的方法和装置 |
DE102013103370A1 (de) | 2013-04-04 | 2014-10-09 | Lpkf Laser & Electronics Ag | Verfahren zum Einbringen von Durchbrechungen in ein Glassubstrat sowie ein derart hergestelltes Glassubstrat |
WO2014161534A2 (de) | 2013-04-04 | 2014-10-09 | Lpkf Laser & Electronics Ag | Verfahren und vorrichtung zum einbringen von durchbrechungen in ein substrat sowie ein derart hergestelltes substrat |
US11556039B2 (en) | 2013-12-17 | 2023-01-17 | Corning Incorporated | Electrochromic coated glass articles and methods for laser processing the same |
US9517963B2 (en) | 2013-12-17 | 2016-12-13 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
TWI730945B (zh) | 2014-07-08 | 2021-06-21 | 美商康寧公司 | 用於雷射處理材料的方法與設備 |
TWI659793B (zh) | 2014-07-14 | 2019-05-21 | 美商康寧公司 | 用於使用可調整雷射束焦線來處理透明材料的系統及方法 |
WO2016041544A1 (de) * | 2014-09-16 | 2016-03-24 | Lpkf Laser & Electronics Ag | Verfahren zum einbringen mindestens einer ausnehmung oder einer durchbrechung in ein plattenförmiges werkstück |
DE102014113339A1 (de) | 2014-09-16 | 2016-03-17 | Lpkf Laser & Electronics Ag | Verfahren zur Erzeugung von Ausnehmungen in einem Material |
EP3274306B1 (en) | 2015-03-24 | 2021-04-14 | Corning Incorporated | Laser cutting and processing of display glass compositions |
US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
US10134657B2 (en) | 2016-06-29 | 2018-11-20 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
KR102078294B1 (ko) | 2016-09-30 | 2020-02-17 | 코닝 인코포레이티드 | 비-축대칭 빔 스폿을 이용하여 투명 워크피스를 레이저 가공하기 위한 기기 및 방법 |
EP3848333A1 (en) | 2016-10-24 | 2021-07-14 | Corning Incorporated | Substrate processing station for laser-based machining of sheet-like glass substrates |
JP6898998B2 (ja) | 2017-03-06 | 2021-07-07 | エル・ピー・ケー・エフ・レーザー・ウント・エレクトロニクス・アクチエンゲゼルシヤフト | 電磁放射及び続くエッチングプロセスにより材料内に少なくとも1つの空隙を施すための方法 |
WO2018210519A1 (de) * | 2017-05-19 | 2018-11-22 | Schott Ag | Bauteil, umfassend glas oder glaskeramik, mit entlang einer vorgegebenen trennlinie angeordneten vorschädigungen, verfahren und vorrichtung zur herstellung des bauteils und dessen verwendung |
US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
US11078112B2 (en) * | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
WO2019195219A1 (en) | 2018-04-03 | 2019-10-10 | Corning Research & Development Corporation | Waveguide substrates and waveguide substrate connector assemblies having waveguides and alignment features and methods of fabricating the same |
EP4089455A1 (en) | 2018-04-03 | 2022-11-16 | Corning Research & Development Corporation | Waveguide substrates and waveguide substrate assemblies having waveguide routing schemes and methods for fabricating the same |
US11609395B2 (en) | 2021-01-11 | 2023-03-21 | Corning Research & Development Corporation | Waveguide substrates and assemblies including the same |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61173899A (ja) * | 1985-01-14 | 1986-08-05 | ゼネラル モーターズ コーポレーシヨン | ポリマーフイルム穿孔方法 |
JPH09255351A (ja) * | 1996-03-26 | 1997-09-30 | Nippon Sheet Glass Co Ltd | ガラス板の孔あけ方法および装置 |
JP2002359341A (ja) * | 2001-05-31 | 2002-12-13 | Hitachi Ltd | 半導体モジュールおよびその製造方法 |
WO2005029581A1 (ja) * | 2003-09-24 | 2005-03-31 | Ibiden Co.,Ltd. | インターポーザ、多層プリント配線板 |
JP2005111997A (ja) * | 2005-01-24 | 2005-04-28 | Seiko Epson Corp | インクジェットヘッド及びその製造方法 |
WO2005074003A1 (ja) * | 2004-01-28 | 2005-08-11 | Kyoto University | レーザ分析装置及び方法 |
JP2005228834A (ja) * | 2004-02-12 | 2005-08-25 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
JP2006352171A (ja) * | 1998-12-16 | 2006-12-28 | Seiko Epson Corp | 半導体チップの製造方法、半導体装置の製造方法、回路基板の製造方法及び電子機器の製造方法 |
JP2008088017A (ja) * | 2006-10-02 | 2008-04-17 | Ulvac Japan Ltd | ガラス基板のエッチング方法 |
JP2009526383A (ja) * | 2006-02-03 | 2009-07-16 | ジーエスアイ・グループ・コーポレーション | 1つまたはそれ以上のターゲットリンク構造を除去するレーザベースの方法およびシステム |
Family Cites Families (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3483373A (en) | 1966-07-28 | 1969-12-09 | Siemens Ag | Airlock assembly for corpuscular ray devices |
US3562009A (en) | 1967-02-14 | 1971-02-09 | Western Electric Co | Method of providing electrically conductive substrate through-holes |
US3783237A (en) | 1972-11-06 | 1974-01-01 | Reynolds Tobacco Co R | Apparatus for electrically perforating sheet material |
DE2802315C2 (de) | 1978-01-20 | 1987-02-05 | Hauni-Werke Körber & Co KG, 2050 Hamburg | Vorrichtung zum Perforieren von Bahnen aus Umhüllungsmaterial für Zigaretten oder andere stabförmige Rauchartikel und Verwendung der Vorrichtung |
DE2830326A1 (de) | 1978-07-10 | 1980-01-24 | Schmidt Kufeke K P | Anordnung zum feinstperforieren folienartiger materialbahnen mittels hochspannungsimpulsen |
FR2475064B1 (fr) | 1980-01-31 | 1987-06-26 | Inoue Japax Res | Procede et dispositif de traitement par etincelage d'une piece conductrice de l'electricite |
DE3111402A1 (de) | 1980-03-25 | 1982-04-29 | Walter Winston Duley | "verfahren und vorrichtung zur laserstrahl-bearbeitung von werkstuecken" |
US4777338A (en) | 1987-04-08 | 1988-10-11 | Cross James D | Perforation of synthetic plastic films |
DE3742770A1 (de) | 1987-12-17 | 1989-06-29 | Akzo Gmbh | Mikro-/ultrafiltrationsmembranen mit definierter porengroesse durch bestrahlung mit gepulsten lasern und verfahren zur herstellung |
US5216207A (en) * | 1991-02-27 | 1993-06-01 | David Sarnoff Research Center, Inc. | Low temperature co-fired multilayer ceramic circuit boards with silver conductors |
FR2677271A1 (fr) | 1991-06-04 | 1992-12-11 | Commissariat Energie Atomique | Procede de realisation de membranes microporeuses. |
US5367143A (en) | 1992-12-30 | 1994-11-22 | International Business Machines Corporation | Apparatus and method for multi-beam drilling |
JP2529811B2 (ja) | 1993-07-28 | 1996-09-04 | 栄電子工業株式会社 | 小径穴加工装置及びそれを使用する小径穴加工方法 |
JP2607346B2 (ja) | 1994-03-04 | 1997-05-07 | 栄電子工業株式会社 | 基板材料の小径穴加工方法 |
JP2572201B2 (ja) | 1994-03-04 | 1997-01-16 | 栄電子工業株式会社 | 基板材料の小径穴加工方法及び装置 |
JP2614697B2 (ja) | 1994-03-29 | 1997-05-28 | 栄電子工業株式会社 | 小径穴加工装置及びそれを使用する小径穴加工方法 |
JP2989271B2 (ja) * | 1995-07-12 | 1999-12-13 | ホーヤ株式会社 | ベアチップ搭載ボード、ベアチップ搭載ボードの製造方法及びベアチップの電極形成方法 |
WO1997003460A1 (fr) | 1995-07-12 | 1997-01-30 | Hoya Corporation | Carte comportant une puce nue, procede de fabrication de la carte et procede de creation d'une electrode de puce nue |
US5770889A (en) * | 1995-12-29 | 1998-06-23 | Lsi Logic Corporation | Systems having advanced pre-formed planar structures |
CN1161899A (zh) | 1996-03-13 | 1997-10-15 | 严跃 | 高分子薄膜微孔加工法 |
JP4004596B2 (ja) | 1997-08-05 | 2007-11-07 | 一成 高木 | プラスチックフィルムの製造方法 |
US6620731B1 (en) * | 1997-12-18 | 2003-09-16 | Micron Technology, Inc. | Method for fabricating semiconductor components and interconnects with contacts on opposing sides |
US6114240A (en) * | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
JP3844868B2 (ja) | 1998-01-12 | 2006-11-15 | 株式会社東芝 | レーザ・放電複合加工方法および装置 |
US7205635B1 (en) * | 1998-03-20 | 2007-04-17 | Mcsp, Llc | Hermetic wafer scale integrated circuit structure |
AU1687300A (en) * | 1998-12-16 | 2000-07-03 | Seiko Epson Corporation | Semiconductor chip, semiconductor device, circuit board and electronic equipmentand production methods for them |
JP3792445B2 (ja) | 1999-03-30 | 2006-07-05 | 日本特殊陶業株式会社 | コンデンサ付属配線基板 |
US7247035B2 (en) * | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
CN1376100A (zh) | 1999-09-28 | 2002-10-23 | 住友重机械工业株式会社 | 激光钻孔的加工方法及其加工装置 |
JP2001266094A (ja) * | 2000-03-15 | 2001-09-28 | Toshiba Corp | 非接触通信装置及び非接触通信装置の制御方法 |
JP3796099B2 (ja) * | 2000-05-12 | 2006-07-12 | 新光電気工業株式会社 | 半導体装置用インターポーザー、その製造方法および半導体装置 |
JP3797068B2 (ja) | 2000-07-10 | 2006-07-12 | セイコーエプソン株式会社 | レーザによる微細加工方法 |
US6399892B1 (en) | 2000-09-19 | 2002-06-04 | International Business Machines Corporation | CTE compensated chip interposer |
US6977224B2 (en) | 2000-12-28 | 2005-12-20 | Intel Corporation | Method of electroless introduction of interconnect structures |
JP3860000B2 (ja) * | 2001-09-07 | 2006-12-20 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
TWI312166B (en) * | 2001-09-28 | 2009-07-11 | Toppan Printing Co Ltd | Multi-layer circuit board, integrated circuit package, and manufacturing method for multi-layer circuit board |
JP2003249606A (ja) * | 2002-02-25 | 2003-09-05 | Sony Corp | 半導体装置及びインターポーザー |
JP3999999B2 (ja) | 2002-04-19 | 2007-10-31 | 新日本製鐵株式会社 | レーザ表面加工装置 |
JP4138529B2 (ja) * | 2003-02-24 | 2008-08-27 | 浜松ホトニクス株式会社 | 半導体装置、及びそれを用いた放射線検出器 |
DE112004000123T5 (de) | 2003-01-10 | 2005-11-10 | Nippon Sheet Glass Co., Ltd. | Glas für die Laserbearbeitung |
DE10301291B3 (de) | 2003-01-15 | 2004-08-26 | Infineon Technologies Ag | Verfahren zum Einbringen von eine unterschiedliche Dimensionierung aufweisenden Strukturen in ein Substrat |
US7327554B2 (en) * | 2003-03-19 | 2008-02-05 | Ngk Spark Plug Co., Ltd. | Assembly of semiconductor device, interposer and substrate |
JP2004288839A (ja) | 2003-03-20 | 2004-10-14 | Fujikura Ltd | 反応性イオンエッチング装置 |
JP2004306137A (ja) | 2003-03-27 | 2004-11-04 | Kyocera Corp | 貫通孔の形成方法 |
US6984583B2 (en) * | 2003-09-16 | 2006-01-10 | Micron Technology, Inc. | Stereolithographic method for forming insulative coatings for via holes in semiconductor devices |
EP1681717B1 (en) * | 2003-11-07 | 2017-03-29 | Shinko Electric Industries Co., Ltd. | Electronic device |
US20060060238A1 (en) | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
EP1677349A4 (en) * | 2004-02-24 | 2010-12-01 | Ibiden Co Ltd | SUBSTRATE FOR MOUNTING A SEMICONDUCTOR |
WO2005097439A2 (en) * | 2004-04-01 | 2005-10-20 | Christian Schmidt | Manufacturing and use of microperforated substrates |
US7109068B2 (en) * | 2004-08-31 | 2006-09-19 | Micron Technology, Inc. | Through-substrate interconnect fabrication methods |
US7221050B2 (en) * | 2004-09-02 | 2007-05-22 | Intel Corporation | Substrate having a functionally gradient coefficient of thermal expansion |
CN100556228C (zh) * | 2004-12-15 | 2009-10-28 | 揖斐电株式会社 | 印刷电路板 |
JP2006239718A (ja) * | 2005-03-01 | 2006-09-14 | Kyoto Univ | ナノ空孔周期配列体の作製方法及びその装置 |
US8022532B2 (en) * | 2005-06-06 | 2011-09-20 | Rohm Co., Ltd. | Interposer and semiconductor device |
JP4394667B2 (ja) | 2006-08-22 | 2010-01-06 | 日本碍子株式会社 | ヒータ付き静電チャックの製造方法 |
JP2008066481A (ja) | 2006-09-06 | 2008-03-21 | Shinko Electric Ind Co Ltd | パッケージ、半導体装置、パッケージの製造方法及び半導体装置の製造方法 |
JP5003082B2 (ja) * | 2006-09-26 | 2012-08-15 | 富士通株式会社 | インターポーザ及びその製造方法 |
WO2008105535A1 (ja) | 2007-03-01 | 2008-09-04 | Nec Corporation | 半導体装置及びその製造方法 |
US8440916B2 (en) * | 2007-06-28 | 2013-05-14 | Intel Corporation | Method of forming a substrate core structure using microvia laser drilling and conductive layer pre-patterning and substrate core structure formed according to the method |
US20090033337A1 (en) | 2007-08-03 | 2009-02-05 | Pasco Robert W | Temporary chip attach test carrier utilizing an interposer |
WO2009022461A1 (ja) * | 2007-08-10 | 2009-02-19 | Sanyo Electric Co., Ltd. | 回路装置及びその製造方法、携帯機器 |
US7763965B2 (en) * | 2007-09-25 | 2010-07-27 | International Business Machines Corporation | Stress relief structures for silicon interposers |
CN101803007A (zh) * | 2007-09-28 | 2010-08-11 | 三洋电机株式会社 | 元件搭载用基板及其制造方法、电路装置及其制造方法、便携式设备 |
WO2009059786A1 (en) | 2007-11-09 | 2009-05-14 | Picodrill Sa | Electrothermal focussing for the production of micro-structured substrates |
JP5079475B2 (ja) * | 2007-12-05 | 2012-11-21 | 新光電気工業株式会社 | 電子部品実装用パッケージ |
EP2237934A1 (en) | 2007-12-12 | 2010-10-13 | PicoDrill SA | Manufacturing of optical structures by electrothermal focussing |
JP5333435B2 (ja) | 2008-03-04 | 2013-11-06 | 日本電気株式会社 | 貫通電極付きキャパシタおよびその製造方法、並びに半導体装置 |
US7833808B2 (en) | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
CN201257685Y (zh) | 2008-06-26 | 2009-06-17 | 高田山 | 膏药离子打孔头 |
KR101555379B1 (ko) * | 2008-06-30 | 2015-09-23 | 니혼도꾸슈도교 가부시키가이샤 | 전기검사용 기판 및 그 제조방법 |
CN102300820B (zh) | 2009-02-02 | 2014-02-26 | 旭硝子株式会社 | 半导体器件构件用玻璃基板及半导体器件构件用玻璃基板的制造方法 |
US8039957B2 (en) * | 2009-03-11 | 2011-10-18 | Raytheon Company | System for improving flip chip performance |
US20100244276A1 (en) * | 2009-03-25 | 2010-09-30 | Lsi Corporation | Three-dimensional electronics package |
US8624374B2 (en) * | 2010-04-02 | 2014-01-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with fan-out and with connecting elements for stacking and manufacturing methods thereof |
US8674513B2 (en) * | 2010-05-13 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structures for substrate |
DE102010025968B4 (de) | 2010-07-02 | 2016-06-02 | Schott Ag | Erzeugung von Mikrolöchern |
DE102010025969A1 (de) * | 2010-07-02 | 2012-01-05 | Schott Ag | Locherzeugung mit Mehrfach-Elektroden |
DE102010025967B4 (de) | 2010-07-02 | 2015-12-10 | Schott Ag | Verfahren zur Erzeugung einer Vielzahl von Löchern, Vorrichtung hierzu und Glas-Interposer |
WO2012129708A1 (de) | 2011-03-30 | 2012-10-04 | Selfrag Ag | Elektrodenanordnung für eine elektrodynamische fragmentierungsanlage |
EP2564999A1 (en) * | 2011-08-31 | 2013-03-06 | Asahi Glass Company, Limited | A method of generating a high quality hole or recess or well in a substrate |
-
2010
- 2010-07-02 DE DE102010025966A patent/DE102010025966B4/de active Active
-
2011
- 2011-07-04 JP JP2013517092A patent/JP6208010B2/ja active Active
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- 2011-07-04 KR KR1020167001285A patent/KR101726982B1/ko active IP Right Grant
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-
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- 2018-12-17 JP JP2018235537A patent/JP2019041133A/ja active Pending
-
2019
- 2019-10-11 US US16/600,191 patent/US11744015B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61173899A (ja) * | 1985-01-14 | 1986-08-05 | ゼネラル モーターズ コーポレーシヨン | ポリマーフイルム穿孔方法 |
JPH09255351A (ja) * | 1996-03-26 | 1997-09-30 | Nippon Sheet Glass Co Ltd | ガラス板の孔あけ方法および装置 |
JP2006352171A (ja) * | 1998-12-16 | 2006-12-28 | Seiko Epson Corp | 半導体チップの製造方法、半導体装置の製造方法、回路基板の製造方法及び電子機器の製造方法 |
JP2002359341A (ja) * | 2001-05-31 | 2002-12-13 | Hitachi Ltd | 半導体モジュールおよびその製造方法 |
WO2005029581A1 (ja) * | 2003-09-24 | 2005-03-31 | Ibiden Co.,Ltd. | インターポーザ、多層プリント配線板 |
WO2005074003A1 (ja) * | 2004-01-28 | 2005-08-11 | Kyoto University | レーザ分析装置及び方法 |
JP2005228834A (ja) * | 2004-02-12 | 2005-08-25 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
JP2005111997A (ja) * | 2005-01-24 | 2005-04-28 | Seiko Epson Corp | インクジェットヘッド及びその製造方法 |
JP2009526383A (ja) * | 2006-02-03 | 2009-07-16 | ジーエスアイ・グループ・コーポレーション | 1つまたはそれ以上のターゲットリンク構造を除去するレーザベースの方法およびシステム |
JP2008088017A (ja) * | 2006-10-02 | 2008-04-17 | Ulvac Japan Ltd | ガラス基板のエッチング方法 |
Non-Patent Citations (1)
Title |
---|
LAWRENCE SHAH, ET AL.: "Femtosecond laser deep hole drilling of silicate glasses in air", APPLIED SURFACE SCIENCE, vol. Vol.183, No.3-4, JPN6014022840, 28 November 2001 (2001-11-28), pages 151 - 164, ISSN: 0002826082 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015146401A (ja) * | 2014-02-04 | 2015-08-13 | 大日本印刷株式会社 | ガラスインターポーザー |
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Publication number | Publication date |
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JP6208010B2 (ja) | 2017-10-04 |
JP2016195270A (ja) | 2016-11-17 |
EP2589072A2 (de) | 2013-05-08 |
WO2012000685A2 (de) | 2012-01-05 |
DE102010025966A1 (de) | 2012-01-05 |
CN102971838A (zh) | 2013-03-13 |
US20130210245A1 (en) | 2013-08-15 |
KR20130040224A (ko) | 2013-04-23 |
WO2012000685A3 (de) | 2012-03-08 |
US20200045817A1 (en) | 2020-02-06 |
KR101726982B1 (ko) | 2017-04-13 |
DE102010025966B4 (de) | 2012-03-08 |
JP6841607B2 (ja) | 2021-03-10 |
US11744015B2 (en) | 2023-08-29 |
CN102971838B (zh) | 2015-11-25 |
JP2019041133A (ja) | 2019-03-14 |
KR20160013259A (ko) | 2016-02-03 |
KR101598260B1 (ko) | 2016-02-26 |
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