JP2013518985A - 動的流体弁およびその構築方法 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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Abstract
【選択図】図1
Description
2 外部
10 基板
10a、b 基板の上側主面(a)および下側主面(b)
100 交換区間
102 交換区間の本体
104 通路
106 交換用流体排出路
108 淀み領域
110 通路上壁
112 通路上壁内の交換用流体注入路
114 交換用流体流供給手段
120 通路下壁
122 通路下壁内の交換用流体注入路
124 交換用流体流供給手段
200 プロセストンネル
202 プロセストンネル空間
204 プロセストンネルセグメント
210 トンネル上壁
212 トンネル上壁内のガス注入路
220 トンネル下壁
222 トンネル下壁内のガス注入路
P 通路方向
Claims (15)
- 基板処理装置(1)であって、
−プロセス空間(202)と、
−前記基板処理装置の外部(2)の外部雰囲気の外部雰囲気圧とは異なるプロセス空間雰囲気圧に前記プロセス空間内のプロセス空間雰囲気を維持するように構成された圧力調節手段と、
−前記基板処理装置の前記外部(2)が前記プロセス空間(202)に開口連通して前記外部と前記プロセス空間との間での基板(10)の交換が可能な通路(104)と、
−前記通路の少なくとも一部を通って延在する交換用流体の流れを生じさせるように、少なくとも1つの交換用流体注入点において交換用流体を前記通路(104)内に注入するように構成された交換用流体注入手段(114,124;112,122)と、
を備え、前記流れは、
○前記外部雰囲気圧が前記プロセス空間雰囲気圧より大きい場合は、前記外部に向かい、
○前記外部雰囲気圧が前記プロセス空間雰囲気圧より小さい場合は、前記プロセス空間に向かう、
装置。 - 前記交換用流体注入手段(114,124;112,122)は、運転中、前記外部雰囲気圧と前記プロセス空間雰囲気圧との間の差による前記通路両端の逆方向の圧力差にも拘らず、前記通路内に延在する基板(10)が交換用流体の流れの方向に加速されるような流量で、交換用流体を前記通路(104)に注入するように構成される、請求項1に記載の装置。
- 前記通路(104)は、前記少なくとも1つの注入点の下流に淀み領域(108)を備え、前記淀み領域は交換用流体排出路(106)に接続される、請求項1または2に記載の装置。
- 運転中、前記淀み領域(108)から排出された交換用流体が前記交換用流体注入手段(114,124;112,122)に供給されて前記通路(104)に注入されるように、前記交換用流体排出路(106)は前記交換用流体注入手段(114,124;112,122)に接続される、請求項3に記載の装置。
- 前記交換用流体注入手段(114,124;112,122)は、前記通路内の前記交換用流体の流れが前記淀み領域(108)で淀むような流量で、前記交換用流体を前記通路(104)に注入するように構成される、請求項3または4に記載の装置。
- 前記交換用流体注入手段(114,124;112,122)は、前記外部雰囲気圧と前記プロセス空間雰囲気圧のどちらか小さい方の圧力にほぼ等しい静圧で、前記交換用流体を注入するように構成される、請求項1乃至5の何れかに記載の装置。
- 前記交換用流体注入手段(114,124;112,122)は、前記外部雰囲気圧と前記プロセス空間雰囲気圧との間の絶対差にほぼ等しい動圧で、前記交換用流体を注入するように構成される、請求項1乃至6の何れかに記載の装置。
- 前記通路(104)は通路方向(P)に延在し、前記交換用流体注入手段(114,124;112,122)は、前記通路方向にほぼ平行な層状の交換用流体の流れを生じさせるように構成される、請求項1乃至7の何れかに記載の装置。
- 前記通路(104)は少なくとも通路上壁(110)と通路下壁(120)とに界接し、前記通路上壁および前記通路下壁の両方に少なくとも1つの交換用流体注入路(112,122)が設けられ、前記通路上壁(110)内の前記少なくとも1つの交換用流体注入路(112)は上側の交換用流体ベアリングをもたらすように構成され、前記通路下壁(120)内の前記少なくとも1つの交換用流体注入路(122)は下側の交換用流体ベアリングをもたらすように構成され、前記交換用流体ベアリングはその間に基板(10)を浮動状態で支持して収容するように構成される、請求項1乃至8の何れかに記載の装置。
- 前記圧力調節手段は、外部雰囲気圧より大きいプロセス空間雰囲気圧を維持するように構成される、請求項1乃至9の何れかに記載の装置。
- −トンネル下壁(220)と、トンネル上壁(210)と、2つのトンネル側壁とを含むプロセストンネルであって、前記トンネル壁は、前記トンネル上壁および前記トンネル下壁に平行に向けられた少なくとも1つのほぼ平板状の基板(10)を収容するように構成された、トンネル方向に延在する前記プロセス空間(202)の境界を一緒に画成する、プロセストンネルと、
−前記トンネル上壁内に設けられた第1の複数のガス注入路(212)および前記トンネル下壁内に設けられた第2の複数のガス注入路(222)であって、前記トンネル上壁内に設けられた前記ガス注入路は上側のガスベアリングをもたらすように構成され、前記トンネル下壁内に設けられた前記ガス注入路は下側のガスベアリングをもたらすように構成され、前記両ガスベアリングは前記基板(10)をその間に浮動状態に支持して収容するように構成される、第1の複数のガス注入路(212)および第2の複数のガス注入路(222)と、
をさらに備える、請求項1乃至10の何れかに記載の装置。 - −プロセス空間雰囲気圧のプロセス空間雰囲気を用意することと、
−前記プロセス空間雰囲気圧とは異なる外部雰囲気圧の外部雰囲気を用意することと、
−前記外部雰囲気が前記プロセス空間雰囲気に開口連通して前記外部雰囲気と前記プロセス空間雰囲気との間での基板の交換が可能である通路(104)を設けることと、
−前記通路の少なくとも一部を通って延在する交換用流体の流れを生じさせるように、少なくとも1つの交換用流体注入点において交換用流体を前記通路に注入することと、
を含む方法であって、前記流れは、
○前記外部雰囲気圧が前記プロセス空間雰囲気圧より大きい場合は、前記外部雰囲気に向かい、
○前記外部雰囲気圧が前記プロセス空間雰囲気圧より小さい場合は、前記プロセス空間雰囲気に向かう、
方法。 - 前記交換用流体は、前記外部雰囲気圧と前記プロセス空間雰囲気圧の間の差による前記通路の両端の逆方向の圧力差にも拘らず、前記通路内に延在する基板(10)が前記交換用流体の前記流れの方向に加速されるような流量で、前記通路(104)に注入される、請求項12に記載の方法。
- 前記交換用流体は、前記外部雰囲気圧と前記プロセス空間雰囲気圧のうちの小さい方の圧力にほぼ等しい静圧で、前記通路に注入される、請求項12または13に記載の方法。
- 前記交換用流体は、前記外部雰囲気圧と前記プロセス空間雰囲気圧との間の絶対差にほぼ等しい動圧で、注入される、請求項12乃至14の何れかに記載の方法。
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NL2004177 | 2010-02-01 | ||
NL2004177A NL2004177C2 (en) | 2010-02-01 | 2010-02-01 | Dynamic fluid valve and method for establishing the same. |
PCT/NL2011/050059 WO2011093709A1 (en) | 2010-02-01 | 2011-01-31 | Dynamic fluid valve and method for establishing the same |
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EP (1) | EP2531634B1 (ja) |
JP (1) | JP5857294B2 (ja) |
KR (1) | KR101820544B1 (ja) |
CN (1) | CN102822382B (ja) |
NL (1) | NL2004177C2 (ja) |
TW (1) | TWI534960B (ja) |
WO (1) | WO2011093709A1 (ja) |
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EP2481832A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition |
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NL2013739B1 (en) * | 2014-11-04 | 2016-10-04 | Asm Int Nv | Atomic layer deposition apparatus and method for processing substrates using an apparatus. |
WO2017123573A2 (en) | 2016-01-12 | 2017-07-20 | Corning Incorporated | Thin thermally and chemically strengthened glass-based articles |
US11795102B2 (en) | 2016-01-26 | 2023-10-24 | Corning Incorporated | Non-contact coated glass and related coating system and method |
KR102218855B1 (ko) * | 2017-07-12 | 2021-02-23 | 주식회사 엘지화학 | 다공성 기재의 표면 코팅 장치 및 방법 |
TW201920028A (zh) | 2017-08-24 | 2019-06-01 | 美商康寧公司 | 具有改良回火能力之玻璃 |
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US20090291209A1 (en) * | 2008-05-20 | 2009-11-26 | Asm International N.V. | Apparatus and method for high-throughput atomic layer deposition |
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JPH08274459A (ja) * | 1995-03-30 | 1996-10-18 | Furukawa Electric Co Ltd:The | 不活性ガス雰囲気炉 |
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Also Published As
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US9822447B2 (en) | 2017-11-21 |
TW201128738A (en) | 2011-08-16 |
KR101820544B1 (ko) | 2018-01-19 |
EP2531634A1 (en) | 2012-12-12 |
TWI534960B (zh) | 2016-05-21 |
KR20130014049A (ko) | 2013-02-06 |
WO2011093709A1 (en) | 2011-08-04 |
US20130052347A1 (en) | 2013-02-28 |
NL2004177C2 (en) | 2011-08-03 |
EP2531634B1 (en) | 2018-04-11 |
CN102822382A (zh) | 2012-12-12 |
CN102822382B (zh) | 2016-01-20 |
JP5857294B2 (ja) | 2016-02-10 |
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