JP2013504776A - 放射線を収集し又は放出するデバイスのための保護基材 - Google Patents
放射線を収集し又は放出するデバイスのための保護基材 Download PDFInfo
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- JP2013504776A JP2013504776A JP2012528330A JP2012528330A JP2013504776A JP 2013504776 A JP2013504776 A JP 2013504776A JP 2012528330 A JP2012528330 A JP 2012528330A JP 2012528330 A JP2012528330 A JP 2012528330A JP 2013504776 A JP2013504776 A JP 2013504776A
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Abstract
Description
−バリア層又は各バリア層は、構成多層の順次薄膜層の各対の第一の層及び第二の層の界面において、第一の層の密度と第二の層の密度との間の密度勾配を有する結合ゾーンを含む。
−バリア層又は各バリア層の構成多層の順次薄膜層の各対のより高密度の層の密度とより低密度の層の密度との差異はより低密度の層の密度の10%以上である。
−バリア層又は各バリア層の構成多層の各薄膜層の幾何厚さは、基材をとおって、放射線を収集し又は放出する要素に向かう又は放射線を収集し又は放出する要素から基材をとおる放射線の透過率を最大化するように調節されている。
−基材は、放射線を収集し又は放出する要素と面することが意図されたポリマー層の面上のバリア層、及び/又は、放射線を収集し又は放出する要素とは反対側に面することが意図されたポリマー層の面上のバリア層を含む。
−バリア層又は各バリア層の構成多層の順次薄膜層の各対に関して、2つの順次薄膜層は同一の化学種であるが、異なる化学量論比を有する。
−バリア層又は各バリア層の構成多層は550nmでの屈折率が1.8〜1.9である水素化窒化ケイ素薄膜層及び550nmでの屈折率が1.7〜1.8である水素化窒化ケイ素薄膜層の重ね合わせ層を少なくとも含む。
−バリア層又は各バリア層の構成多層の順次薄膜層の各対に関して、2つの順次薄膜層は異なる化学種である。
−約1.9の屈折率n21及び1〜20nm、好ましくは5〜15nmの幾何厚さe21を有する比較的に高い密度d21の水素化窒化ケイ素第一層21、
−約1.7の屈折率n22及び25〜45nm、好ましくは30〜40nmの幾何厚さe22を有する比較的に低い密度d22の水素化窒化ケイ素第二層22、
−約1.9の屈折率n23=n21及び55〜75nm、好ましくは60〜70nmの幾何厚さe23を有する比較的に高い密度d23=d21の水素化窒化ケイ素第三層23、
−約1.7の屈折率n24=n22及び65〜85nm、好ましくは75〜85nmの幾何厚さe24を有する比較的に低い密度d24=d22の水素化窒化ケイ素第四層24。
−約1.9の屈折率n131及び50〜70nm、好ましくは60〜70nmの幾何厚さe131を有する比較的に高い密度d131の水素化窒化ケイ素第一層131、
−約1.7の屈折率n132及び60〜80nm、好ましくは70〜80nmの幾何厚さe132を有する比較的に低い密度d132の水素化窒化ケイ素第二層132。
−約1.9の屈折率及び70〜100nm、好ましくは80〜90nmの幾何厚さを有する比較的に高い密度の水素化窒化ケイ素SiNxHy第一層、
−約1.9の屈折率n及び60〜90nm、好ましくは70〜80nmの幾何厚さを有する比較的に低い密度の酸化ケイ素SiOx第二層。
−約1.9の屈折率n221及び1〜20nm、好ましくは5〜15nmの幾何厚さe221を有する比較的に高い密度d221の水素化窒化ケイ素第一層221、及び、
−約1.7の屈折率n222及び100〜130nm、好ましくは110〜125nmの幾何厚さe222を有する比較的に低い密度d222の水素化窒化ケイ素第二層222。
−約1.9の屈折率n231及び60〜80nm、好ましくは60〜70nmの幾何厚さe231を有する比較的に高い密度d231の水素化窒化ケイ素第一層231、及び、
−約1.7の屈折率n232及び60〜90nm、好ましくは70〜80nmの幾何厚さe232を有する比較的に低い密度d232の水素化窒化ケイ素第二層232。
Claims (14)
- 放射線を収集し又は放出する少なくとも1つの要素(12;13)を含むデバイス(50;60)のための保護基材(11;111;211)であって、透明ポリマー層(1;101;201)及び該ポリマー層の少なくとも1つの面(1A;101B;201A,201B)上のバリア層(2;103;202,203)を含む保護基材(11;111;211)において、前記バリア層又は各バリア層(2;103;202,203)は交互により低い屈折率及びより高い屈折率を有しかつ交互により低い密度及びより高い密度を有する少なくとも2層の透明薄膜層(21,22,23,24;131,132;221,222,231,232)の反射防止性多層からなり、前記バリア層又は各バリア層(2;103;202,203)の構成多層の各薄膜層(21,22,23,24;131,132;221,222,231,232)は酸化物、窒化物又は酸窒化物層であることを特徴とする、保護基材。
- 前記バリア層又は各バリア層(2;103;202,203)は、構成多層の順次薄膜層の各対の第一の層及び第二の層の界面において、前記第一の層の密度と前記第二の層の密度との間の密度勾配を有する結合ゾーン(20;130;220,230)を含むことを特徴とする、請求項1記載の基材。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層の順次薄膜層の各対のより高密度の層の密度とより低密度の層の密度との差異はより低密度の層の密度の10%以上であることを特徴とする、請求項1又は2記載の基材。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層の各薄膜層の幾何厚さ(e21,e22,e23,e24;e131,e132;e221,e222,e231,e232)は、基材(11;111;211)をとおって、放射線を収集し又は放出する要素(12;13)に向かう、又は、放射線を収集し又は放出する要素(12;13)から基材(11;111;211)をとおる放射線の透過率を最大化するように調節されていることを特徴とする、請求項1〜3のいずれか1項記載の基材。
- 放射線を収集し又は放出する要素(12;13)と面することが意図されたポリマー層(1;201)の面(1A;201A)上のバリア層(2;202)、及び/又は、放射線を収集し又は放出する要素(12;13)とは反対側に面することが意図されたポリマー層の面(101B;201B)上のバリア層(103;203)を含むことを特徴とする、請求項1〜4のいずれか1項記載の基材。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層の順次薄膜層の各対に関して、2つの順次薄膜層は同一の化学種であるが、異なる化学量論比を有することを特徴とする、請求項1〜5のいずれか1項記載の基材。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層は550nmでの屈折率が1.8〜1.9である水素化窒化ケイ素薄膜層及び550nmでの屈折率が1.7〜1.8である水素化窒化ケイ素薄膜層の重ね合わせ層を少なくとも含むことを特徴とする、請求項6記載の基材。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層の順次薄膜層の各対に関して、2つの順次薄膜層は異なる化学種であることを特徴とする、請求項1〜5のいずれか1項記載の基材。
- 請求項1〜8のいずれか1項記載の保護基材(11;111;211)及び放射線を収集し又は放出する少なくとも1つの要素(12;13)を含む、放射線を収集し又は放出するデバイス(50;60)であって、前記要素(12;13)はポリマー層(1;101;201)及び前記バリア層又は各バリア層(2;103;202,203)を通過する放射線を収集することができ、又は、前記ポリマー層及び前記バリア層又は各バリア層をとおして放射線を放出することができるように前記基材に対して配置されている、デバイス。
- 放射線を収集し又は放出する前記要素は光電池セル(12)又は有機発光ダイオード(13)であることを特徴とする、請求項9記載のデバイス。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層の少なくとも幾つかの薄膜層はプラズマ増強化学蒸着(PECVD)及び/又はスパッタリングにより堆積されることを特徴とする、請求項1〜8のいずれか1項記載の保護基材(11;111;211)の製造方法。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層の少なくとも幾つかの薄膜層はプラズマ増強化学蒸着(PECVD)によって、堆積の間に、堆積チャンバー中の圧力及び/又は出力及び/又は前駆体の相対割合及び/又は前駆体の種類を変化させることにより堆積されることを特徴とする、請求項11記載の製造方法。
- 前記バリア層又は各バリア層(2;103;202,203)の構成多層の少なくとも幾つかの薄膜層は反応性スパッタリング、特に反応性マグネトロンスパッタリングによって、堆積の間に、堆積チャンバー中の圧力及び/又は出力及び/又は反応性ガスの種類を変化させることにより堆積されることを特徴とする、請求項11記載の製造方法。
- 前記ポリマー層(1;101;201)の1つの面(1A;101B;201A,201B)の上への前記バリア層又は各バリア層(2;103;202,203)の構成多層の薄膜層の堆積の前に、前記ポリマー層の前記面はプラズマの手段により活性化されることを特徴とする、請求項11〜13のいずれか1項記載の製造方法。
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JP2014516455A (ja) * | 2011-04-08 | 2014-07-10 | サン−ゴバン グラス フランス | 多層電子デバイス |
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JP2019050113A (ja) * | 2017-09-08 | 2019-03-28 | 株式会社Joled | 有機el表示パネル、有機el表示装置、およびその製造方法 |
US10998526B2 (en) | 2017-09-08 | 2021-05-04 | Joled Inc. | Organic EL display panel including a multilayer sealing layer, organic EL display device, and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
MX2012002891A (es) | 2012-08-23 |
FR2949775A1 (fr) | 2011-03-11 |
US8766280B2 (en) | 2014-07-01 |
US20120228641A1 (en) | 2012-09-13 |
AU2010294304B2 (en) | 2013-08-29 |
WO2011029786A1 (en) | 2011-03-17 |
AU2010294304A1 (en) | 2012-03-29 |
CN102714279A (zh) | 2012-10-03 |
BR112012005451A2 (pt) | 2016-04-12 |
FR2949775B1 (fr) | 2013-08-09 |
EP2476148A1 (en) | 2012-07-18 |
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