JP2009099986A - 光電池用途のための反射防止コーティング - Google Patents
光電池用途のための反射防止コーティング Download PDFInfo
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- JP2009099986A JP2009099986A JP2008265781A JP2008265781A JP2009099986A JP 2009099986 A JP2009099986 A JP 2009099986A JP 2008265781 A JP2008265781 A JP 2008265781A JP 2008265781 A JP2008265781 A JP 2008265781A JP 2009099986 A JP2009099986 A JP 2009099986A
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- polyunsaturated
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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Abstract
【解決手段】有機シラン、アミノシラン及びそれらの混合物からなる群より選択される前駆体を含む組成物を化学気相成長させることにより、シリコン基材の少なくとも一方の表面上に非晶質炭化ケイ素の反射防止コーティングを形成する工程を含み、該非晶質炭化ケイ素の反射防止コーティングが、式SivCxNuHyFzによって表される膜であって、式中、v+x+u+y+z=100%、vが1〜35原子%、xが5〜80原子%、uが0〜50原子%、yが10〜50原子%、及びzが0〜15原子%である、p−n接合を含むシリコン基材を含む光起電力素子を製造するための方法が提供される。
【選択図】図1
Description
例としては、シクロヘキサン、トリメチルシクロヘキサン、1−メチル−4(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、シクロオクテン、シクロオクタジエン、シクロヘプテン、シクロペンテン、シクロヘキセン、及び1,5,9−シクロドデカトリエンが挙げられる。
例としては、エチレン、プロピレン、アセチレン、ネオヘキサンなどが挙げられる。
例としては、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、t−ブチルシクロヘキセン、α−テルピネン、ピネン、1,5−ジメチル−1,5−シクロオクタジエン、ビニル−シクロヘキセンなどが挙げられる。
例としては、ノルボルナン、スピロ−ノナン、デカヒドロナフタレンなどが挙げられる。
例としては、カンフェン、ノルボルネン、ノルボルナジエンなどが挙げられる。
例としては、アダマンタンが挙げられる。
有機シラン、例えば、トリメチルシラン及びテトラメチルシラン(別々に)等を用いてPECVD技術によりシリコンウェハ上に膜を堆積した。ウェハを、約100℃〜約400℃のサセプタ温度を有する200mmのApplied Materials DxZ PECVDチャンバーにおいて処理した。約3torrの圧力を50sccm〜1000sccmの流量とともに用いた。RF出力(13.56MHz)を30〜500秒間にわたり100W〜800Wの間で変化させ、1.5〜2.3の屈折率を得た。図2は、約1200cm-1でのSi−C共有結合を示す非晶質炭化ケイ素膜のIRスペクトルである。
アンモニア(NH3)とともに又はそれなしでビスt−ブチルアミノシラン(BTBAS)を用いてPECVD技術によりシリコンウェハ上に膜を堆積した。ウェハを、約100℃〜約400℃のサセプタ温度を有する200mmのApplied Materials DxZ PECVDチャンバーにおいて処理した。約2.0〜4.0torrの圧力を50sccm〜1000sccmの流量とともに用いた。RF出力(13.56MHz)を30〜500秒間にわたり200W〜800Wの間で変化させ、1.5〜2.0の屈折率を得た。図3は、約1200cm-1でのSi−C共有結合及び3300cm-1での窒素の存在を示す非晶質炭窒化ケイ素膜のIRスペクトルである。
Claims (15)
- p−n接合を含むシリコン基材を含む光起電力素子を製造するための方法であって、
有機シラン、アミノシラン及びそれらの混合物からなる群より選択される前駆体を含む組成物を化学気相成長させることにより、シリコン基材の少なくとも一方の表面上に非晶質炭化ケイ素の反射防止コーティングを形成する工程を含み、
該非晶質炭化ケイ素の反射防止コーティングが、式SivCxNuHyFzによって表される膜であって、式中、v+x+u+y+z=100%、vが1〜35原子%、xが5〜80原子%、uが0〜50原子%、yが10〜50原子%、及びzが0〜15原子%である、方法。 - 前記基材がテクスチャ処理されている、請求項1に記載の方法。
- 前記組成物が炭化水素をさらに含む、請求項1に記載の方法。
- 前記反射防止コーティングがアミノシランを含む組成物の化学気相成長によって形成される、請求項1に記載の方法。
- 前記アミノシランがビス(t−ブチルアミノ)シランである、請求項4に記載の方法。
- 前記炭化水素が少なくとも1つの前駆体とは異なる、請求項3に記載の方法。
- 少なくとも1つの前駆体が、
(a)式(NR1SiR1R3)xの環状シラザン化合物(式中、R1及びR3は独立してH、直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化されたC1〜C4であり、xは2〜8の整数である)、
(b)式(CR1R3SiR1R3)xの環状カルボシラン化合物(式中、R1及びR3は独立してH、直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化されたC1〜C4であり、xは2〜8の整数である)、
(c)式(R1nR2mR3oR4p)tSi−H4-tの非環状アルキルシラン(式中、R1〜R4は直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化されたC1〜C4であることができ、t=n+m+o+pである)、
(d)式R1 n(NR2)4-nSiの化合物(式中、R1は独立してH又はC1〜C4の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2は独立してC1〜C6の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、nは0〜3である)、
(e)式R1 n(NR2)3-nSi−SiR3 m(NR4)3-mの化合物(式中、R1及びR3は独立してH又はC1〜C4の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2及びR4は独立してC1〜C6の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、nは0〜3であり、mは0〜3である)、
(f)式R1 n(NR2)3-nSi−R5−SiR3 m(NR4)m-3の化合物(式中、R1及びR3は独立してH又はC1〜C4の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2、R4及びR5は独立してC1〜C6の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、あるいはまた、R5はアミン基又は有機アミン基であり、nは0〜3であり、mは0〜3である)、
(g)式(R1 n(NR2)3-nSi)tCH4-tの化合物(式中、R1は独立してH又はC1〜C4の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2は独立してC1〜C6の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、nは0〜3であり、tは1〜3である)、及び
(h)式(R1 n(NR2)3-nSi)tNH3-t(式中、R1は独立してH又はC1〜C4の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2は独立してC1〜C6の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、nは0〜3である)
からなる群より選択された少なくとも1つの前駆体である、請求項1に記載の方法。 - 前記少なくとも1つの前駆体が、式(R1nR2mR3oR4p)tSi−H4-tの少なくとも1つの非環状アルキルシラン(式中、R1〜R4は直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化されたC1〜C4であることができ、t=n+m+o+pである)である、請求項7に記載の方法。
- 前記前駆体が、モノメチルシラン、ジメチルシラン、トリメチルシラン、及びテトラメチルシランからなる群より選択される、請求項8に記載の方法。
- 前記前駆体がテトラメチルシランである、請求項9に記載の方法。
- 前記炭化水素が、
1)一般式CnH2nの環式炭化水素(式中、n=4〜14であり、環式構造中の炭素数は4〜12である)、
2)一般式CnH(2n+2)-2yの直鎖又は分枝の、飽和、単又は複不飽和の炭化水素(式中、n=2〜20であり、y=不飽和の単位である)、
3)一般式CnH2n-2xの単又は複不飽和の環式炭化水素(式中、xは炭化水素分子中の不飽和部位の数であり、n=4〜14であり、環式構造中の炭素数は4〜10である)、
4)一般式CnH2n-2の二環式炭化水素(式中、n=4〜14であり、二環式構造中の炭素数は4〜12である)、
5)一般式CnH2n-(2+2x)の複不飽和の二環式炭化水素(式中、xは分子中の不飽和部位の数であり、n=4〜14であり、二環式構造中の炭素数は4〜12である)、及び
6)一般式CnH2n-4の三環式炭化水素(式中、n=4〜14であり、三環式構造中の炭素数は4〜12である)
からなる群より選択される、請求項3に記載の方法。 - 前記炭化水素が、シクロヘキサン、トリメチルシクロヘキサン、1−メチル−4(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、シクロオクテン、シクロオクタジエン、シクロヘプテン、シクロペンテン、シクロヘキセン、1,5,9−シクロドデカトリエン、エチレン、プロピレン、アセチレン、ネオヘキサン、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、t−ブチルシクロヘキセン、α−テルピネン、ピネン、1,5−ジメチル−1,5−シクロオクタジエン、ビニル−シクロヘキセン、ノルボルナン、スピロ−ノナン、デカヒドロナフタレン、カンフェン、ノルボルネン、ノルボルナジエン、及びアダマンタンからなる群より選択される、請求項11に記載の方法。
- 少なくとも1つの前駆体が、
a)R1 n(NR2)4-nSi(式中、R1はH又は直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化されたC1〜C12であり、R2は直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化されたC1〜C12であり、nは0〜4である)、
b)R1 n(NR2)3-nSi−SiR3 m(NR4)m-3(式中、R1及びR3は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2及びR4は独立してC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、nは0〜3であり、mは0〜3である)、
c)式(NR1SiR1R3)xの環状シラザン(式中、R1及びR3は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、xは2〜8の任意の整数であり、但し、R1及びR3の少なくとも1つはC3以上の炭化水素で置換されている)、
d)式(CR1R3SiR1R3)xの環状カルボシラン(式中、R1及びR3は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、xは2〜8の任意の整数であり、但し、R1及びR3の少なくとも1つはC3以上の炭化水素で置換されている)、
e)R1 n(NR4)3-nSi−R5−SiR3 m(NR4)m-3(式中、R1及びR3は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2、R4、R5は独立してC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、あるいはまた、R5はアミン基又は有機アミン基であり、nは0〜3であり、mは0〜3である)、
f)(R1 n(NR2)3-nSi)tCH4-t(式中、R1は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2は独立してC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、nは0〜3である)、
g)(R1 n(NR3)3-nSi)tNH3-t(式中、R1は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、R2及びR3は独立してC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素であり、nは0〜3であり、pは0〜3であり、tは1〜3であり、但し、n+p≦4であり、R1の少なくとも1つはC3以上の炭化水素で置換されている)、
h)式(NR1Si(R2)a(R3)b(NR4)c)xの環状シラザン(式中、R1、R2及びR3は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、xは2〜8の任意の整数であり、a、b及びcは0〜2であり、a+b+c=2であり、但し、R1及びR3の少なくとも1つはC3以上の炭化水素で置換されている)、及び
i)式(CR1R3Si(R2)b(NR3)c)xの環状カルボシラン(式中、R1、R2及びR3は独立してH又はC1〜C12の直鎖又は分枝の、飽和、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素であり、xは2〜8の任意の整数であり、b及びcは0〜2であり、b+c=2であり、但し、R1、R2及びR3の少なくとも1つはC3以上の炭化水素で置換されている)
からなる群より選択された少なくとも1つの前駆体である、請求項1に記載の方法。 - 前記前駆体が、ジメチルアミノ−t−ブチル−ネオ−ヘキシルシラン、ジエチル−ネオ−ヘキシルシラン、1,2−ジプロピルアミノ−1,2−ジ−t−ブチル−1−ネオヘキシルジシラン、及び1,2−ジエチル−1−ネオ−ヘキシルジシランからなる群より選択される、請求項13に記載の方法。
- p−n接合を含むシリコン基材と、
式SivCxNuHyFzによって表され、式中、v+x+u+y+z=100%、vが1〜35原子%、xが5〜80原子%、uが0〜50原子%、yが10〜50原子%、及びzが0〜15原子%である非晶質炭化ケイ素の反射防止コーティングと
を含む、光電池。
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TWI440197B (zh) | 2014-06-01 |
JP5390161B2 (ja) | 2014-01-15 |
US8987039B2 (en) | 2015-03-24 |
JP2013238890A (ja) | 2013-11-28 |
TW200917510A (en) | 2009-04-16 |
EP2048699A2 (en) | 2009-04-15 |
EP2048699A3 (en) | 2010-11-03 |
US20090095346A1 (en) | 2009-04-16 |
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