JP5607166B2 - 感受性要素を封入するための層状要素 - Google Patents
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Description
−バリア層又は各バリア層は、構成多層の順次薄膜層の各対の第一の層及び第二の層の界面において、第一の層の密度と第二の層の密度との間の密度勾配を有する結合ゾーンを含む。
−バリア層又は各バリア層の構成多層の順次薄膜層の各対のより高密度の層の密度とより低密度の層の密度との差異はより低密度の層の密度の10%以上である。
−層状要素は感受性要素と面することが意図されたポリマー層の面に対するバリア層、及び/又は、感受性要素とは反対側に面することが意図されたポリマー層の面に対するバリア層を含む。
−ポリマー層は熱可塑性ポリマーから作られた基材であり、該基材はその少なくとも1つの面の上にバリア層を含む。
−ポリマー層はラミネーションインターレイヤであり、該ラミネーションインターレイヤはその少なくとも1つの面の上にバリア層を含む。
−ポリマー層及びバリア層又は各バリア層は透明であり、バリア層又は各バリア層の各薄膜層の幾何厚さは、反射防止効果により、層状要素をとおって感受性要素に向かう又は感受性要素から層状要素をとおる放射線の透過率を最大化するように調節されている。
−バリア層又は各バリア層の構成多層は550nmでの屈折率が1.8〜1.9である水素化窒化ケイ素薄膜層からなる重ね合わせ層及び550nmでの屈折率が1.7〜1.8である水素化窒化ケイ素薄膜層からなる重ね合わせ層を少なくとも含む。
−約1.9の屈折率n21及び1〜20nm、好ましくは5〜15nmの幾何厚さe21を有する比較的に高い密度d21の水素化窒化ケイ素第一層21、
−約1.7の屈折率n22及び25〜45nm、好ましくは30〜40nmの幾何厚さe22を有する比較的に低い密度d22の水素化窒化ケイ素第二層22、
−約1.9の屈折率n23=n21及び55〜75nm、好ましくは60〜70nmの幾何厚さe23を有する比較的に高い密度d23=d21の水素化窒化ケイ素第三層23、
−約1.7の屈折率n24=n22及び65〜85nm、好ましくは75〜85nmの幾何厚さe24を有する比較的に低い密度d24=d22の水素化窒化ケイ素第四層24。
−約1.9の屈折率n131及び50〜70nm、好ましくは60〜70nmの幾何厚さe131を有する比較的に高い密度d131の水素化窒化ケイ素第一層131、
−約1.7の屈折率n132及び60〜80nm、好ましくは70〜80nmの幾何厚さe132を有する比較的に低い密度d132の水素化窒化ケイ素第二層132。
−約1.9の屈折率n221及び1〜20nm、好ましくは5〜15nmの幾何厚さe221を有する比較的に高い密度d221の水素化窒化ケイ素第一層221、及び、
−約1.7の屈折率n222及び100〜130nm、好ましくは110〜125nmの幾何厚さe222を有する比較的に低い密度d222の水素化窒化ケイ素第二層222。
−約1.9の屈折率n231及び60〜80nm、好ましくは60〜70nmの幾何厚さe231を有する比較的に高い密度d231の水素化窒化ケイ素第一層231、及び、
−約1.7の屈折率n232及び60〜90nm、好ましくは70〜80nmの幾何厚さe232を有する比較的に低い密度d232の水素化窒化ケイ素第二層232。
−約1.7の屈折率n131及び25〜60nm、好ましくは35〜50nmの幾何厚さe321を有する比較的に低い密度d321の水素化窒化ケイ素第一層321、
−約1.9の屈折率n322及び100〜150nm、好ましくは115〜140nmの幾何厚さe322を有する比較的に高い密度d322の水素化窒化ケイ素第二層322、
−約1.7の屈折率n323=n321及び1〜30nm、好ましくは10〜20nmの幾何厚さe323を有する比較的に低い密度d323=d321の水素化窒化ケイ素第三層323、及び、
−約1.9の屈折率n324=n322及び1〜30nm、好ましくは10〜20nmの幾何厚さe324を有する比較的に高い密度d324=d322の水素化窒化ケイ素第四層324。
Claims (10)
- 空気及び/又は湿分に感受性である要素(12;13;312)、特に、光電池セル又は有機発光ダイオードなどの放射線を収集し又は放出する要素を封入するための層状要素(11;111;211;311)であって、ポリマー層(1;101;201;304)及び該ポリマー層の少なくとも1つの面(1A;101B;201A,201B;304A)に対するバリア層(2;103;202,203;302)を含む層状要素において、
前記バリア層又は各バリア層(2;103;202,203;302)は湿分蒸気輸送速度が10−2g/m2/日未満であり、かつ、交互により低密度とより高密度とを有する少なくとも2層の水素化窒化ケイ素薄膜層(21,22,23,24;131,132;221,222,231,232;321,322,323,324)の多層からなり、
前記ポリマー層及び前記バリア層又は各バリア層は透明であり、前記バリア層又は各バリア層(2;103;202,203;302)の各薄膜層の幾何厚さ(e 21 ,e 22 ,e 23 ,e 24 ;e 131 ,e 132 ;e 221 ,e 222 ,e 231 ,e 232 ;e 321 ,e 322 ,e 323 ,e 324 )は、反射防止効果により、層状要素(11;111;211;311)をとおって感受性要素(12;13;312)に向かう又は感受性要素(12;13;312)から層状要素(11;111;211;311)をとおる放射線の透過率を最大化するように調節されていることを特徴とする、層状要素。 - 前記バリア層又は各バリア層(2;103;202,203;302)は、構成多層の順次薄膜層の各対の第一の層及び第二の層の界面において、前記第一の層の密度と前記第二の層の密度との間の密度勾配を有する結合ゾーン(20;130;220,230;320)を有することを特徴とする、請求項1記載の層状要素。
- 前記バリア層又は各バリア層(2;103;202,203;302)の構成多層の順次薄膜層の各対のより高密度の層の密度とより低密度の層の密度との差異はより低密度の層の密度の10%以上であることを特徴とする、請求項1又は2記載の層状要素。
- 感受性要素(12;13;312)と面することが意図されたポリマー層(1;201;304)の面(1A;201A;304A)に対するバリア層(2;202;302)、及び/又は、感受性要素(12;13;312)とは反対側に面することが意図されたポリマー層の面(101B;201B)に対するバリア層(103;203)を含むことを特徴とする、請求項1〜3のいずれか1項記載の層状要素。
- 前記ポリマー層は熱可塑性ポリマーから作られた基材(1;101;201)であり、該基材はその少なくとも1つの面(1A;101B;201A,201B)の上にバリア層(2;103;202,203;302)を含むことを特徴とする、請求項1〜4のいずれか1項記載の層状要素。
- 前記ポリマー層はその少なくとも1つの面(304A)に対するバリア層(302)を含むラミネーションインターレイヤ(304)であることを特徴とする、請求項1〜4のいずれか1項記載の層状要素。
- 前記バリア層又は各バリア層(2;103;202,203;302)の構成多層は550nmでの屈折率が1.8〜1.9である水素化窒化ケイ素薄膜層及び550nmでの屈折率が1.7〜1.8である水素化窒化ケイ素薄膜層の重ね合わせ層を少なくとも含むことを特徴とする、請求項1記載の層状要素。
- 空気及び/又は湿分に感受性である要素(12;13;312)を含むデバイス(50;60;350)において、前記感受性要素(12;13;312)の前方及び/又は後方封入要素として、請求項1〜7のいずれか1項記載の層状要素(11;111;211;311)を含むことを特徴とするデバイス。
- 放射線を収集し又は放出する請求項8記載のデバイスであって、前記感受性要素は放射線を収集し又は放出する要素(12;13;312)であり、該要素は、ポリマー層(1;101;201;304)及び前記バリア層又は各バリア層(2;103;202,203;302)を通過する放射線を収集することができ又は前記ポリマー層及び前記バリア層又は各バリア層をとおして放射線を放出することができるように前記層状要素に対して配置されていることを特徴とする、デバイス。
- 放射線を収集し又は放出する前記要素は光電池セル(12;312)又は有機発光ダイオード(13)であることを特徴とする、請求項9記載のデバイス。
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FR0956207A FR2949776B1 (fr) | 2009-09-10 | 2009-09-10 | Element en couches pour l'encapsulation d'un element sensible |
US25493609P | 2009-10-26 | 2009-10-26 | |
US61/254,936 | 2009-10-26 | ||
PCT/EP2010/062999 WO2011029787A1 (en) | 2009-09-10 | 2010-09-03 | Layered element for encapsulating a sensitive element |
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Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7874125B2 (en) | 2007-03-08 | 2011-01-25 | Lrm Industries International, Inc | Molded support beam |
FR2949775B1 (fr) | 2009-09-10 | 2013-08-09 | Saint Gobain Performance Plast | Substrat de protection pour dispositif collecteur ou emetteur de rayonnement |
FR2949776B1 (fr) | 2009-09-10 | 2013-05-17 | Saint Gobain Performance Plast | Element en couches pour l'encapsulation d'un element sensible |
KR20120109083A (ko) * | 2011-03-24 | 2012-10-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
FR2973939A1 (fr) * | 2011-04-08 | 2012-10-12 | Saint Gobain | Element en couches pour l’encapsulation d’un element sensible |
FR2973946B1 (fr) * | 2011-04-08 | 2013-03-22 | Saint Gobain | Dispositif électronique a couches |
FR2973940A1 (fr) * | 2011-04-08 | 2012-10-12 | Saint Gobain | Element en couches pour l’encapsulation d’un element sensible |
FR2987122B1 (fr) * | 2012-02-16 | 2014-03-21 | Commissariat Energie Atomique | Ecran d'affichage et son procede de fabrication |
WO2013135765A1 (de) * | 2012-03-16 | 2013-09-19 | Osram Opto Semiconductors Gmbh | Elektronisches bauelement mit feuchtigkeit-barriereschicht |
KR101502206B1 (ko) | 2012-11-20 | 2015-03-12 | 삼성디스플레이 주식회사 | 발광효율이 향상된 유기발광 표시장치 |
CN103904248B (zh) * | 2012-12-25 | 2016-08-03 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
KR20150097796A (ko) * | 2012-12-31 | 2015-08-26 | 생-고뱅 퍼포먼스 플라스틱스 코포레이션 | 유연성 기재 상의 박막 규소질화물 장벽 층들 |
CN104078579A (zh) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
CN104078607A (zh) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
WO2015061656A1 (en) * | 2013-10-24 | 2015-04-30 | Universal Display Corporation | Flexible permation barrier system deposited in a single process and having ultralow permeability and low mechanical stress over its service life |
JP2015133247A (ja) * | 2014-01-14 | 2015-07-23 | 日東電工株式会社 | 有機エレクトロルミネッセンス装置 |
JP2016001526A (ja) * | 2014-06-11 | 2016-01-07 | 株式会社ジャパンディスプレイ | 表示装置 |
KR20160036722A (ko) * | 2014-09-25 | 2016-04-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101691340B1 (ko) * | 2014-10-16 | 2016-12-29 | 도판 인사츠 가부시키가이샤 | 양자 도트 보호 필름, 그것을 사용한 양자 도트 필름 및 백라이트 유닛 |
KR102313361B1 (ko) * | 2014-11-17 | 2021-10-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 이를 포함하는 전자 기기, 및 유기 발광 표시 장치의 제조 방법 |
KR102373437B1 (ko) | 2015-03-05 | 2022-03-14 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
CN105552247B (zh) * | 2015-12-08 | 2018-10-26 | 上海天马微电子有限公司 | 复合基板、柔性显示装置及其制备方法 |
EP3196013A1 (en) * | 2016-01-20 | 2017-07-26 | AGC Glass Europe | Organic photovoltaic assembly and process of manufacture |
JP2017147191A (ja) | 2016-02-19 | 2017-08-24 | 株式会社ジャパンディスプレイ | 表示装置、及び表示装置の製造方法 |
US11751426B2 (en) * | 2016-10-18 | 2023-09-05 | Universal Display Corporation | Hybrid thin film permeation barrier and method of making the same |
CN108269827A (zh) * | 2017-01-03 | 2018-07-10 | 昆山工研院新型平板显示技术中心有限公司 | 薄膜封装结构、柔性显示面板、及薄膜封装结构制作方法 |
CN110799862B (zh) * | 2017-06-30 | 2021-11-09 | 夏普株式会社 | 荧光体层组成物、荧光构件、光源装置以及投影装置 |
KR102333217B1 (ko) | 2017-07-25 | 2021-12-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 박막 캡슐화 |
JP6805099B2 (ja) | 2017-09-08 | 2020-12-23 | 株式会社Joled | 有機el表示パネル、有機el表示装置、およびその製造方法 |
US11038153B2 (en) | 2019-01-15 | 2021-06-15 | Applied Materials, Inc. | Methods for HMDSO thermal stability |
KR20210057884A (ko) | 2019-11-12 | 2021-05-24 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN110970572A (zh) * | 2019-11-14 | 2020-04-07 | 京东方科技集团股份有限公司 | 封装结构、显示面板及显示装置 |
KR20210146482A (ko) * | 2020-05-26 | 2021-12-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN114551607B (zh) * | 2022-02-25 | 2023-12-12 | 陕西迪泰克新材料有限公司 | 一种遮光层、复合膜层及其制备方法 |
Family Cites Families (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0782996B2 (ja) | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | 結晶の形成方法 |
JPH07111484B2 (ja) | 1989-06-26 | 1995-11-29 | 松下電器産業株式会社 | プラスチック製光学部品の反射防止膜とその形成方法 |
FR2673633B1 (fr) | 1991-03-06 | 1993-06-11 | Air Liquide | Revetement multicouche pour substrat polycarbonate. |
US5254904A (en) | 1991-05-21 | 1993-10-19 | U.S. Philips Corporation | Antireflective coating layer in particular for a cathode ray tube |
US5234748A (en) | 1991-06-19 | 1993-08-10 | Ford Motor Company | Anti-reflective transparent coating with gradient zone |
FR2748743B1 (fr) | 1996-05-14 | 1998-06-19 | Saint Gobain Vitrage | Vitrage a revetement antireflet |
JPH11218603A (ja) | 1997-11-27 | 1999-08-10 | Sony Corp | 反射防止膜およびその製造方法 |
US6335479B1 (en) | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
US6268695B1 (en) | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
JP2000211053A (ja) | 1999-01-22 | 2000-08-02 | Sony Corp | 光学薄膜デバイス |
JP3509804B2 (ja) | 1999-09-30 | 2004-03-22 | 株式会社ニコン | 多層薄膜付き光学素子及びそれを備える露光装置 |
US20100330748A1 (en) | 1999-10-25 | 2010-12-30 | Xi Chu | Method of encapsulating an environmentally sensitive device |
US6573652B1 (en) | 1999-10-25 | 2003-06-03 | Battelle Memorial Institute | Encapsulated display devices |
FR2800998B1 (fr) | 1999-11-17 | 2002-04-26 | Saint Gobain Vitrage | Substrat transparent comportant un revetement antireflet |
US20020090521A1 (en) | 2000-09-29 | 2002-07-11 | Tatsuji Nakajima | Silica layers and antireflection film using same |
US20030186064A1 (en) | 2000-09-29 | 2003-10-02 | Kenji Murata | Transparent laminate having low emissivity |
JP4147008B2 (ja) | 2001-03-05 | 2008-09-10 | 株式会社日立製作所 | 有機el素子に用いるフィルム及び有機el素子 |
US7071613B2 (en) * | 2001-10-10 | 2006-07-04 | Lg.Philips Lcd Co., Ltd. | Organic electroluminescent device |
JP4016178B2 (ja) | 2001-11-06 | 2007-12-05 | ソニー株式会社 | 表示装置及び反射防止用基体 |
WO2003046649A1 (en) | 2001-11-29 | 2003-06-05 | Daewoo Electronics Service Co., Ltd | Method of fabricating a plastic substrate |
US6589658B1 (en) | 2001-11-29 | 2003-07-08 | Guardian Industries Corp. | Coated article with anti-reflective layer(s) system |
JP3650366B2 (ja) | 2002-03-08 | 2005-05-18 | 株式会社エイコー・エンジニアリング | 無機材料封止された有機発光装置 |
US20030203210A1 (en) | 2002-04-30 | 2003-10-30 | Vitex Systems, Inc. | Barrier coatings and methods of making same |
JP4062981B2 (ja) | 2002-06-14 | 2008-03-19 | 株式会社デンソー | 有機el素子 |
CN1176565C (zh) | 2002-11-25 | 2004-11-17 | 清华大学 | 一种有机电致发光器件的封装层及其制备方法和应用 |
JP2004198590A (ja) * | 2002-12-17 | 2004-07-15 | Konica Minolta Holdings Inc | 薄膜有するを物品、その製造方法及び低反射体並びに透明導電性体 |
US7807225B2 (en) | 2003-01-31 | 2010-10-05 | Sharp Laboratories Of America, Inc. | High density plasma non-stoichiometric SiOxNy films |
US20080171184A9 (en) * | 2003-04-17 | 2008-07-17 | Minoru Komada | Barrier film and laminated material, container for wrapping and image display medium using the saw, and manufacturing method for barrier film |
JP2004345223A (ja) | 2003-05-22 | 2004-12-09 | Dainippon Printing Co Ltd | 光学機能性フィルム、および画像表示装置 |
FR2858975B1 (fr) | 2003-08-20 | 2006-01-27 | Saint Gobain | Substrat transparent revetu d'un empilement de couches minces a proprietes de reflexion dans l'infrarouge et/ou dans le domaine du rayonnement solaire |
JP4703108B2 (ja) | 2003-09-10 | 2011-06-15 | 三星モバイルディスプレイ株式會社 | 発光素子基板およびそれを用いた発光素子 |
US6842288B1 (en) | 2003-10-30 | 2005-01-11 | 3M Innovative Properties Company | Multilayer optical adhesives and articles |
US20050093437A1 (en) * | 2003-10-31 | 2005-05-05 | Ouyang Michael X. | OLED structures with strain relief, antireflection and barrier layers |
JP2007526601A (ja) | 2004-02-20 | 2007-09-13 | オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト | 拡散バリア層および拡散バリア層の製造方法 |
US20050207016A1 (en) | 2004-03-15 | 2005-09-22 | Fuji Photo Film Co., Ltd. | Antireflection film, polarizing plate and liquid crystal display |
WO2006007313A2 (en) | 2004-06-25 | 2006-01-19 | Applied Materials, Inc. | Improving water-barrier performance of an encapsulating film |
JP4837271B2 (ja) | 2004-10-04 | 2011-12-14 | 株式会社アルバック | 反射防止膜の形成方法 |
JP2006338947A (ja) * | 2005-05-31 | 2006-12-14 | Sanyo Electric Co Ltd | 保護膜形成方法および保護膜 |
JP2007017668A (ja) | 2005-07-07 | 2007-01-25 | Konica Minolta Holdings Inc | 光学フィルム |
JP2007038529A (ja) | 2005-08-03 | 2007-02-15 | Konica Minolta Holdings Inc | ガスバリア性薄膜積層体、ガスバリア性樹脂基材および有機エレクトロルミネッセンスデバイス |
JP2007098931A (ja) | 2005-09-09 | 2007-04-19 | Seiko Epson Corp | スクリーン印刷装置、発光装置の製造方法および製造装置 |
US8017242B2 (en) | 2005-09-28 | 2011-09-13 | Fujifilm Corporation | Antireflection film, polarizing plate and image display |
JP2007090702A (ja) | 2005-09-29 | 2007-04-12 | Fujifilm Corp | 水蒸気バリアフィルムおよび有機エレクトロルミネッセンス素子 |
US8153282B2 (en) | 2005-11-22 | 2012-04-10 | Guardian Industries Corp. | Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide |
WO2007081057A1 (en) | 2006-01-16 | 2007-07-19 | Fujifilm Corporation | Curable composition and cured product, laminate film and antireflective film using the same and polarizing plate and image display device using the antireflective film |
JP5135753B2 (ja) | 2006-02-01 | 2013-02-06 | セイコーエプソン株式会社 | 光学物品 |
US20070212498A1 (en) | 2006-02-24 | 2007-09-13 | Fujifilm Corporation | Optical film, antireflection film, polarizing plate, display apparatus and method for manufacturing optical film |
US20100326429A1 (en) * | 2006-05-19 | 2010-12-30 | Cumpston Brian H | Hermetically sealed cylindrical solar cells |
JP4722746B2 (ja) | 2006-03-29 | 2011-07-13 | 京セラ株式会社 | El装置 |
JP2007277631A (ja) * | 2006-04-06 | 2007-10-25 | Konica Minolta Holdings Inc | ガスバリア性薄膜積層体の製造方法、ガスバリア性薄膜積層体、ガスバリア性樹脂基材及び有機エレクトロルミネッセンスデバイス |
WO2008011919A1 (de) | 2006-07-28 | 2008-01-31 | Ilford Imaging Switzerland Gmbh | Flexible materialien fuer optische anwendungen |
US20080049431A1 (en) | 2006-08-24 | 2008-02-28 | Heather Debra Boek | Light emitting device including anti-reflection layer(s) |
WO2008057045A1 (en) | 2006-11-06 | 2008-05-15 | Agency For Science, Technology And Research | Nanoparticulate encapsulation barrier stack |
US7781031B2 (en) | 2006-12-06 | 2010-08-24 | General Electric Company | Barrier layer, composite article comprising the same, electroactive device, and method |
JP2008216429A (ja) | 2007-03-01 | 2008-09-18 | Toppan Printing Co Ltd | 防眩フィルム |
JP2008288012A (ja) | 2007-05-17 | 2008-11-27 | Seiko Epson Corp | エレクトロルミネッセンス装置とその製造方法 |
US8586189B2 (en) | 2007-09-19 | 2013-11-19 | Fujifilm Corporation | Gas-barrier film and organic device comprising same |
JP5139153B2 (ja) * | 2007-09-19 | 2013-02-06 | 富士フイルム株式会社 | ガスバリア性フィルムおよびこれを用いた有機デバイス |
JP5417698B2 (ja) | 2007-09-21 | 2014-02-19 | 凸版印刷株式会社 | 機能性フィルムの製造方法 |
US20090084963A1 (en) | 2007-10-01 | 2009-04-02 | David, Joseph And Negley | Apparatus and methods to produce electrical energy by enhanced down-conversion of photons |
US20090096106A1 (en) | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
JP2009133000A (ja) | 2007-10-30 | 2009-06-18 | Fujifilm Corp | シリコン窒化物膜及びそれを用いたガスバリア膜、薄膜素子 |
DE102008031405A1 (de) | 2008-07-02 | 2010-01-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines organischen elektronischen Bauelements und organisches elektronisches Bauelement |
WO2009098793A1 (ja) * | 2008-02-07 | 2009-08-13 | Fuji Electric Holdings Co., Ltd. | 有機elディスプレイおよびその製造方法 |
US20090199901A1 (en) * | 2008-02-08 | 2009-08-13 | Applied Materials, Inc. | Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device |
KR20090107882A (ko) | 2008-04-10 | 2009-10-14 | 삼성전자주식회사 | 고정층을 포함하는 경사 조성 봉지 박막 및 그의 제조방법 |
KR20090126863A (ko) | 2008-06-05 | 2009-12-09 | 삼성전자주식회사 | 광학적 기능성을 갖는 다층 봉지 박막의 형성방법 및 그에 의해 제조된 다층 봉지 박막 |
KR101084267B1 (ko) | 2009-02-26 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
DE102009024411A1 (de) | 2009-03-24 | 2010-09-30 | Osram Opto Semiconductors Gmbh | Dünnschichtverkapselung für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement |
JP5424091B2 (ja) | 2009-03-31 | 2014-02-26 | コニカミノルタ株式会社 | 紫外反射膜を有するフィルムミラー |
KR101560234B1 (ko) | 2009-06-29 | 2015-10-15 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
CN102482818B (zh) | 2009-07-07 | 2015-07-01 | 可乐丽可乐富丽世股份有限公司 | 层叠片材和其生产方法 |
FR2949775B1 (fr) | 2009-09-10 | 2013-08-09 | Saint Gobain Performance Plast | Substrat de protection pour dispositif collecteur ou emetteur de rayonnement |
FR2949776B1 (fr) | 2009-09-10 | 2013-05-17 | Saint Gobain Performance Plast | Element en couches pour l'encapsulation d'un element sensible |
JP2011100111A (ja) | 2009-10-09 | 2011-05-19 | Seiko Epson Corp | 光学物品、光学物品の製造方法、電子機器 |
FR2973939A1 (fr) | 2011-04-08 | 2012-10-12 | Saint Gobain | Element en couches pour l’encapsulation d’un element sensible |
FR2973940A1 (fr) | 2011-04-08 | 2012-10-12 | Saint Gobain | Element en couches pour l’encapsulation d’un element sensible |
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2009
- 2009-09-10 FR FR0956207A patent/FR2949776B1/fr active Active
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- 2010-09-03 AU AU2010294305A patent/AU2010294305B2/en not_active Ceased
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- 2010-09-03 JP JP2012528331A patent/JP5607166B2/ja not_active Expired - Fee Related
- 2010-09-03 CN CN201080050934.6A patent/CN102714280B/zh not_active Expired - Fee Related
- 2010-09-03 WO PCT/EP2010/062999 patent/WO2011029787A1/en active Application Filing
- 2010-09-03 EP EP10747904A patent/EP2476147A1/en not_active Withdrawn
- 2010-09-03 US US13/395,412 patent/US9246131B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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EP2476147A1 (en) | 2012-07-18 |
FR2949776A1 (fr) | 2011-03-11 |
MX2012002892A (es) | 2012-06-01 |
US9246131B2 (en) | 2016-01-26 |
CN102714280B (zh) | 2016-01-13 |
CN102714280A (zh) | 2012-10-03 |
JP2013504863A (ja) | 2013-02-07 |
AU2010294305B2 (en) | 2013-10-10 |
US20120228668A1 (en) | 2012-09-13 |
FR2949776B1 (fr) | 2013-05-17 |
BR112012005447A2 (pt) | 2016-04-12 |
AU2010294305A1 (en) | 2012-03-29 |
WO2011029787A1 (en) | 2011-03-17 |
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