JP2013175754A - 横型hemt - Google Patents
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- JP2013175754A JP2013175754A JP2013079755A JP2013079755A JP2013175754A JP 2013175754 A JP2013175754 A JP 2013175754A JP 2013079755 A JP2013079755 A JP 2013079755A JP 2013079755 A JP2013079755 A JP 2013079755A JP 2013175754 A JP2013175754 A JP 2013175754A
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- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 48
- 238000002161 passivation Methods 0.000 claims description 41
- 229910002704 AlGaN Inorganic materials 0.000 claims description 30
- 230000000295 complement effect Effects 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 373
- 238000000034 method Methods 0.000 description 54
- 230000008569 process Effects 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 9
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Abstract
【解決手段】横型HEMT5は、基板10と、第1導電型の半導体物質を有し、少なくとも部分的に基板10の上に配置された第1層11と、半導体物質を有し、少なくとも部分的に第1層11の上に配置された第2層12と、半導体物質を有し、少なくとも部分的に第1層11の中に配置された第3層13とを有する。
【選択図】図5
Description
Claims (15)
- 基板(10)と、
第1導電型の半導体物質を有し、少なくとも部分的に上記基板(10)の上に配置された第1層(11)と、
半導体物質を有し、少なくとも部分的に上記第1層(11)の上に配置された第2層(12)と、
半導体物質を有し、少なくとも部分的に上記基板(10)の中に配置された第3層(13)とを有する、横型HEMT。 - 上記第3層(13)の半導体物質は、上記第1導電型に対して相補的な第2導電型を有し、
上記基板(10)は、上記第1導電型の半導体物質を有する、請求項1に記載の横型HEMT。 - 上記第3層(13)の半導体物質は、上記第1導電型を有し、
上記基板(10)は、上記第1導電型に対して相補的な第2導電型の半導体物質を有する、請求項1に記載の横型HEMT。 - 上記横型HEMTは、第1電極(14)、第2電極(15)、およびゲート電極(16)を有する、請求項1ないし3の何れか1項に記載の横型HEMT。
- 上記第1電極(14)は、上記第2層(12)から上記第3層(13)まで垂直方向に延び、
上記第2電極(15)は、上記第2層(12)から部分的に上記基板(10)の中まで垂直方向に延びる、請求項4に記載の横型HEMT。 - 上記第1層(11)は、GaNを有する、請求項1ないし5の何れか1項に記載の横型HEMT。
- 上記第2層(12)は、AlGaNを有する、請求項1ないし6の何れか1項に記載の横型HEMT。
- 上記第3層(13)は、Siを有する、請求項1ないし7の何れか1項に記載の横型HEMT。
- 上記基板(10)は、Siを有する、請求項1ないし8の何れか1項に記載の横型HEMT。
- 上記基板(10)は、SiCを有する、請求項1ないし8の何れか1項に記載の横型HEMT。
- 上記第2層(12)は、ドープされていない、請求項1ないし10の何れか1項に記載の横型HEMT。
- 上記横型HEMTは、バッファ層(17)を有し、上記バッファ層(17)は、上記基板(10)と上記第1層(11)との間に配置されている、請求項1ないし11の何れか1項に記載の横型HEMT。
- 上記バッファ層(17)は、AlN、GaN、またはAlGaNを有する、請求項12に記載の横型HEMT。
- 上記横型HEMTは、パッシベーション層(18)を有し、上記パッシベーション層(18)は、少なくとも部分的に上記第2層(12)の上に配置されている、請求項1ないし13の何れか1項に記載の横型HEMT。
- 上記横型HEMTは、絶縁層(19)を有し、上記絶縁層(19)は、少なくとも部分的に上記パッシベーション層(18)の上に配置されている、請求項14に記載の横型HEMT。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009018054.0 | 2009-04-21 | ||
DE102009018054.0A DE102009018054B4 (de) | 2009-04-21 | 2009-04-21 | Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT |
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JP2010097156A Division JP5475535B2 (ja) | 2009-04-21 | 2010-04-20 | 横型hemtおよび横型hemtの製造方法 |
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JP2013175754A true JP2013175754A (ja) | 2013-09-05 |
JP5766740B2 JP5766740B2 (ja) | 2015-08-19 |
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JP2013079755A Active JP5766740B2 (ja) | 2009-04-21 | 2013-04-05 | 横型hemt |
JP2013079756A Active JP5678119B2 (ja) | 2009-04-21 | 2013-04-05 | 横型hemt |
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US (2) | US8314447B2 (ja) |
JP (3) | JP5475535B2 (ja) |
DE (1) | DE102009018054B4 (ja) |
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US8513703B2 (en) * | 2010-10-20 | 2013-08-20 | National Semiconductor Corporation | Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same |
US8502273B2 (en) * | 2010-10-20 | 2013-08-06 | National Semiconductor Corporation | Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same |
JP5758132B2 (ja) * | 2011-01-26 | 2015-08-05 | 株式会社東芝 | 半導体素子 |
KR102011523B1 (ko) * | 2011-03-18 | 2019-08-16 | 스미토모 세이카 가부시키가이샤 | 금속 페이스트 조성물 |
US9024356B2 (en) | 2011-12-20 | 2015-05-05 | Infineon Technologies Austria Ag | Compound semiconductor device with buried field plate |
US10002957B2 (en) * | 2011-12-21 | 2018-06-19 | Power Integrations, Inc. | Shield wrap for a heterostructure field effect transistor |
JP5696083B2 (ja) | 2012-03-26 | 2015-04-08 | 株式会社東芝 | 窒化物半導体素子及びその製造方法 |
US9276097B2 (en) * | 2012-03-30 | 2016-03-01 | Infineon Technologies Austria Ag | Gate overvoltage protection for compound semiconductor transistors |
DE102012207501B4 (de) | 2012-05-07 | 2017-03-02 | Forschungsverbund Berlin E.V. | Halbleiterschichtenstruktur |
US9666705B2 (en) * | 2012-05-14 | 2017-05-30 | Infineon Technologies Austria Ag | Contact structures for compound semiconductor devices |
US9076763B2 (en) * | 2012-08-13 | 2015-07-07 | Infineon Technologies Austria Ag | High breakdown voltage III-nitride device |
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US8884335B2 (en) | 2014-11-11 |
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