JP2013175726A - ゲートスペーサを備えたエンハンスメントモードGaNHEMTデバイス、及びその製造方法 - Google Patents
ゲートスペーサを備えたエンハンスメントモードGaNHEMTデバイス、及びその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 125000006850 spacer group Chemical group 0.000 claims abstract description 41
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 68
- 239000003989 dielectric material Substances 0.000 claims description 31
- 229910002704 AlGaN Inorganic materials 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000003870 refractory metal Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 150000002736 metal compounds Chemical class 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 12
- 239000007769 metal material Substances 0.000 abstract description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 73
- 229910002601 GaN Inorganic materials 0.000 description 71
- 230000015572 biosynthetic process Effects 0.000 description 30
- GLGNXYJARSMNGJ-VKTIVEEGSA-N (1s,2s,3r,4r)-3-[[5-chloro-2-[(1-ethyl-6-methoxy-2-oxo-4,5-dihydro-3h-1-benzazepin-7-yl)amino]pyrimidin-4-yl]amino]bicyclo[2.2.1]hept-5-ene-2-carboxamide Chemical compound CCN1C(=O)CCCC2=C(OC)C(NC=3N=C(C(=CN=3)Cl)N[C@H]3[C@H]([C@@]4([H])C[C@@]3(C=C4)[H])C(N)=O)=CC=C21 GLGNXYJARSMNGJ-VKTIVEEGSA-N 0.000 description 25
- 229940125758 compound 15 Drugs 0.000 description 25
- 239000010936 titanium Substances 0.000 description 9
- 238000004151 rapid thermal annealing Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
セルフアラインされたゲートスペーサ、ゲートメタル材料及びゲート化合物を有するエンハンスメントモードGaNデバイス、及びその製造方法が提供される。
【解決手段】
ゲートスペーサ、ゲートメタル材料及びゲート化合物が、単一のフォトマスクを用いてパターニング及びエッチングされ、それにより製造コストが低減される。ゲートスペーサとゲート化合物との界面は、誘電体膜とゲート化合物との界面より低いリークを有し、それによりゲートリークが低減される。さらに、オーミックコンタクトメタル層が、ドレインコンタクト側のドープトIII−V族化合物のコーナー部における電界を緩和するフィールドプレートとして使用され、より低いゲートリーク電流と向上されたゲート信頼性とがもたらされる。
【選択図】 図2
Description
Claims (19)
- 基板と、
前記基板上のバッファ材料と、
前記バッファ材料上のバリア材料と、
前記バリア材料上のゲートIII−V族化合物と、
前記ゲートIII−V族化合物上のゲートメタルと、
少なくとも前記ゲートメタルの側壁に形成されたスペーサ材料と、
を有するエンハンスメントモードGaNトランジスタ。 - 前記ゲートIII−V族化合物及び前記ゲートメタルは、セルフアラインされるように単一のフォトマスクプロセスで形成される、請求項1に記載のトランジスタ。
- 前記バッファ材料はGaNを有する、請求項1に記載のトランジスタ。
- 前記バリア材料はAlGaNを有する、請求項1に記載のトランジスタ。
- 前記スペーサ材料は、前記ゲートメタル及び前記ゲートIII−V族化合物の側壁に形成されている、請求項1に記載のトランジスタ。
- 前記ゲートメタル上の誘電体材料を更に有する請求項1に記載のトランジスタ。
- 前記スペーサ材料は前記誘電体材料の側壁にも形成されている、請求項6に記載のトランジスタ。
- 前記スペーサ材料は、前記ゲートメタル、前記ゲートIII−V族化合物及び前記誘電体材料の側壁に形成されている、請求項6に記載のトランジスタ。
- 前記スペーサ材料は酸化シリコン(SiO2)を有する、請求項1に記載のトランジスタ。
- 前記スペーサ材料は、プラズマ化学気相成長(PECVD)による窒化シリコン(Si3N4)を有する、請求項1に記載のトランジスタ。
- 前記ゲートメタルは、Ta、TaN、TiN、Pd、W、又はWSiなどの、1つ以上の高融点金属、金属化合物又は合金を含む、請求項1に記載のトランジスタ。
- エンハンスメントモードGaNトランジスタを製造する方法であって、
基板上にバッファ材料を形成し、
前記バッファ材料上にAlGaNバリアを形成し、
前記AlGaNバリア上にIII−V族化合物を形成し、
前記III−V族化合物上にゲートメタルを有するスタックを形成し、
少なくとも前記ゲートメタルスタックの側壁にスペーサ材料を形成し、
前記ゲートメタル及び前記スペーサ材料をマスクとして用いて、前記III−V族化合物をエッチングし、
誘電体層を堆積し、
ドレインコンタクト領域及びソースコンタクト領域を開口するよう、前記誘電体層をエッチングし、且つ
前記開口したドレインコンタクト領域及びソースコンタクト領域内に、オーミックドレインコンタクト及びオーミックソースコンタクトを形成する、
ことを有する方法。 - 前記スペーサ材料は、前記ゲートメタルスタック及び前記III−V族化合物の側壁に形成される、請求項12に記載の方法。
- 各ゲートメタルスタック上に誘電体材料を形成することを更に有する請求項12に記載の方法。
- 前記スペーサ材料は前記誘電体材料の側壁にも形成される、請求項14に記載の方法。
- 前記スペーサ材料は、前記ゲートメタルスタック、前記III−V族化合物及び前記誘電体材料の側壁に形成される、請求項14に記載の方法。
- 前記スペーサ材料は酸化シリコン(SiO2)を有する、請求項12に記載の方法。
- 前記スペーサ材料は、プラズマ化学気相成長(PECVD)による窒化シリコン(Si3N4)を有する、請求項12に記載の方法。
- 前記ゲートメタルは、Ta、TaN、TiN、Pd、W、又はWSiなどの、1つ以上の高融点金属、金属化合物又は合金を含む、請求項12に記載の方法。
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US13/403,400 US8823012B2 (en) | 2009-04-08 | 2012-02-23 | Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same |
US13/403,400 | 2012-02-23 |
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WO2016017127A1 (ja) * | 2014-07-29 | 2016-02-04 | パナソニックIpマネジメント株式会社 | 窒化物半導体装置 |
CN107533974A (zh) * | 2015-05-07 | 2018-01-02 | 德克萨斯仪器股份有限公司 | 低应力低氢型lpcvd氮化硅 |
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CN104465746B (zh) * | 2014-09-28 | 2018-08-10 | 苏州能讯高能半导体有限公司 | 一种hemt器件及其制造方法 |
TWI802096B (zh) * | 2021-11-23 | 2023-05-11 | 新唐科技股份有限公司 | 電晶體元件 |
CN116613192B (zh) * | 2023-07-17 | 2023-10-03 | 成都氮矽科技有限公司 | 一种常关型GaN HEMT及制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04101435A (ja) * | 1990-08-21 | 1992-04-02 | Sumitomo Electric Ind Ltd | 電界効果トランジスタの製造方法 |
JP2008010461A (ja) * | 2006-06-27 | 2008-01-17 | Sharp Corp | ヘテロ接合電界効果型トランジスタおよびヘテロ接合電界効果型トランジスタの製造方法 |
JP2010192716A (ja) * | 2009-02-19 | 2010-09-02 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタおよび電界効果トランジスタ製造方法 |
WO2010118092A1 (en) * | 2009-04-08 | 2010-10-14 | Efficient Power Conversion Corporation | Back diffusion suppression structures |
WO2010118100A1 (en) * | 2009-04-08 | 2010-10-14 | Efficient Power Conversion Corporation | Compensated gate misfet and method for fabricating the same |
JP2011204891A (ja) * | 2010-03-25 | 2011-10-13 | Panasonic Corp | トランジスタ及びその製造方法 |
JP2011204993A (ja) * | 2010-03-26 | 2011-10-13 | Panasonic Corp | 双方向スイッチ素子及びそれを用いた双方向スイッチ回路 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6638871B2 (en) * | 2002-01-10 | 2003-10-28 | United Microlectronics Corp. | Method for forming openings in low dielectric constant material layer |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
JP4705412B2 (ja) | 2005-06-06 | 2011-06-22 | パナソニック株式会社 | 電界効果トランジスタ及びその製造方法 |
JP2009509343A (ja) * | 2005-09-16 | 2009-03-05 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | N極窒化アルミニウムガリウム/窒化ガリウムエンハンスメントモード電界効果トランジスタ |
JP4755961B2 (ja) * | 2006-09-29 | 2011-08-24 | パナソニック株式会社 | 窒化物半導体装置及びその製造方法 |
DE112010001555B4 (de) * | 2009-04-08 | 2021-10-07 | Efficient Power Conversion Corporation | GaN-HEMT vom Anreicherungstyp und Verfahren zu seiner Herstellung |
KR101172857B1 (ko) * | 2009-12-14 | 2012-08-09 | 경북대학교 산학협력단 | 인헨스먼트 노멀리 오프 질화물 반도체 소자 및 그 제조방법 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04101435A (ja) * | 1990-08-21 | 1992-04-02 | Sumitomo Electric Ind Ltd | 電界効果トランジスタの製造方法 |
JP2008010461A (ja) * | 2006-06-27 | 2008-01-17 | Sharp Corp | ヘテロ接合電界効果型トランジスタおよびヘテロ接合電界効果型トランジスタの製造方法 |
JP2010192716A (ja) * | 2009-02-19 | 2010-09-02 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタおよび電界効果トランジスタ製造方法 |
WO2010118092A1 (en) * | 2009-04-08 | 2010-10-14 | Efficient Power Conversion Corporation | Back diffusion suppression structures |
WO2010118100A1 (en) * | 2009-04-08 | 2010-10-14 | Efficient Power Conversion Corporation | Compensated gate misfet and method for fabricating the same |
JP2011204891A (ja) * | 2010-03-25 | 2011-10-13 | Panasonic Corp | トランジスタ及びその製造方法 |
JP2011204993A (ja) * | 2010-03-26 | 2011-10-13 | Panasonic Corp | 双方向スイッチ素子及びそれを用いた双方向スイッチ回路 |
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CN103296078B (zh) | 2017-01-18 |
CN103296078A (zh) | 2013-09-11 |
DE102013202972A1 (de) | 2013-09-05 |
TW201347177A (zh) | 2013-11-16 |
DE102013202972B4 (de) | 2020-07-30 |
KR20130097116A (ko) | 2013-09-02 |
JP6147018B2 (ja) | 2017-06-14 |
TWI566402B (zh) | 2017-01-11 |
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