JP2013171931A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000012535 impurity Substances 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 360
- 238000000034 method Methods 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 15
- 238000009413 insulation Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 108091006146 Channels Proteins 0.000 description 53
- 239000000758 substrate Substances 0.000 description 41
- 230000005684 electric field Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
【解決手段】ドリフト層120はドレイン層110より上に形成されており、第1導電型を有している。ゲート絶縁膜170は凹部142の側壁に形成されている。底面絶縁膜172は、凹部142の底面に形成されている。ゲート電極180は凹部142に埋め込まれている。ソース層150はチャネル層140に形成されている。第1導電型層130はチャネル層140とドリフト層120の間に位置している。第1導電型層130の不純物濃度は、ドリフト層120の不純物濃度よりも高い。
【選択図】図1
Description
図1は、第1の実施形態に係る半導体装置100の構成を示す平面図である。図2は、図1のA−A´断面図である。半導体装置100は、縦型トランジスタを有している。この縦型トランジスタは、例えば電力制御素子として用いられる。半導体装置100は、ドレイン層110、ドリフト層120、凹部142、ゲート絶縁膜170、底面絶縁膜172、ゲート電極180、ソース層150、及び第1導電型層130を備えている。ドレイン層110は、バッファ層20を介して半導体基板101に形成されている。ドリフト層120はドレイン層110より上に形成されており、第1導電型を有している。ドリフト層120の不純物濃度は、ドレイン層110の不純物濃度よりも低い。チャネル層140はドレイン層110よりも上に位置しており、第2導電型を有している。凹部142はチャネル層140に形成されており、下端がチャネル層140よりも下に位置している。すなわち凹部142はチャネル層140を貫通している。ゲート絶縁膜170は凹部142の側壁に形成されている。底面絶縁膜172は、凹部142の底面に形成されている。ゲート電極180は凹部142に埋め込まれている。ソース層150はチャネル層140に形成されている。ソース層150は第1導電型を有している。ソース層150はチャネル層140よりも浅く形成されており、平面視で凹部142の隣に位置している。第1導電型層130はチャネル層140とドリフト層120の間に位置している。第1導電型層130の不純物濃度は、ドリフト層120の不純物濃度よりも高い。第1導電型層130の不純物濃度は、例えばドリフト層120の不純物濃度の10倍以上であるが、1000倍以下であるのが好ましい。
図17は、第2の実施形態に係る半導体装置100の構成を示す断面図であり、第1の実施形態における図2に対応している。本実施形態に係る半導体装置100は、中間層132を有している点を除いて、第1の実施形態に係る半導体装置100と同様の構成である。
図21は、第3の実施形態に係る半導体装置100の構成を示す断面図であり、第2の実施形態における図17に対応している。本実施形態に係る半導体装置100は、以下の点を除いて、第2の実施形態に係る半導体装置100と同様の構成である。
図25は、第4の実施形態に係る半導体装置100の構成を示す断面図である。図26は、図25に示した半導体装置100の平面図である。なお図25は、図26のA−A´断面を示している。本実施形態に係る半導体装置100は、フィールドプレート電極222を有している点を除いて、第2の実施形態に係る半導体装置100と同様の構成である。
図31は、第5の実施形態に係る半導体装置100の構成を示す断面図であり、第2の実施形態における図17に対応している。本実施形態に係る半導体装置100は、第2導電型埋込層162を有している点を除いて、第2の実施形態に係る半導体装置100と同様の構成である。すなわち本実施形態に係る半導体装置100は、スーパージャンクション構造を有している。
図35は、第6の実施形態に係る半導体装置100の構成を示す断面図であり、第2の実施形態における図17に相当している。本実施形態に係る半導体装置100は、バッファ層20が無い点を除いて、第2の実施形態と同様である。
本実施形態によっても第2の実施形態と同様の効果を得ることができる。
図36は、第7の実施形態に係る電子装置の回路構成を示す図である。この電子装置は、例えば車両に用いられており、電子装置2、電源4、及び負荷6を有している。電源4は例えば車両に搭載されているバッテリーである。負荷6は、例えば車両に搭載されている電子部品、例えばヘッドランプ、パワーウィンドウ、またはワイパーである。そして電子装置2は、 電源4から負荷6に供給する電力を制御している。
3 半導体装置
4 電源
6 負荷
8 半導体装置
10 基板
20 バッファ層
30 素子分離膜
50 レジストパターン
52 レジストパターン
100 半導体装置
101 半導体基板
110 ドレイン層
120 ドリフト層
130 第1導電型層
132 中間層
140 チャネル層
142 凹部
143 凹部
144 凹部
150 ソース層
160 ベース層
162 第2導電型埋込層
170 ゲート絶縁膜
171 フィールドプレート絶縁膜
172 底面絶縁膜
174 絶縁膜
175 絶縁膜
180 ゲート電極
182 ゲート配線
184 コンタクト
190 層間絶縁膜
210 ドレイン電極
220 ソース電極
222 フィールドプレート電極
224 コンタクト
Claims (14)
- 第1導電型のドレイン層と、
前記ドレイン層より上に形成され、前記ドレイン層よりも不純物濃度が低い第1導電型のドリフト層と、
前記ドリフト層上に位置する第2導電型のチャネル層と、
前記チャネル層に形成され、下端が前記チャネル層よりも下に位置している凹部と、
前記凹部の側壁に形成されたゲート絶縁膜と、
前記凹部の底面に形成された底面絶縁膜と、
前記凹部に埋め込まれたゲート電極と、
前記チャネル層に、前記チャネル層よりも浅く形成され、平面視で前記凹部の隣に位置する第1導電型のソース層と、
前記チャネル層と前記ドリフト層の間に位置し、前記ドリフト層よりも不純物濃度が高い第1導電型層と、
を備え、
厚さ方向で見た場合、前記第1導電型層は、上端及び下端の少なくとも一方、並びに中心が、前記底面絶縁膜と重なっている半導体装置。 - 請求項1に記載の半導体装置において、
前記第1導電型層は、前記第1導電型層の厚さ方向で見た場合、前記上端及び前記下端の双方が前記絶縁膜と重なっている半導体装置。 - 請求項1に記載の半導体装置において、
前記第1導電型層の厚さ方向で見た場合、前記第1導電型層のうち前記底面絶縁膜と重なっていない部分の厚さは、前記第1導電型層の厚さの10%以下である半導体装置。 - 請求項1に記載の半導体装置において、
前記第1導電型層の不純物濃度は、1×1017cm−3以上1×1019cm−3以下である半導体装置。 - 請求項1に記載の半導体装置において、
前記第1導電型層の厚さをt、前記第1導電型層の不純物濃度をNとした場合、t×N<1.25×1016m−2である半導体装置。 - 請求項1に記載の半導体装置において、
前記第1導電型層及び前記チャネル層はエピタキシャル層であり、かつエピタキシャル成長時に不純物が導入されている半導体装置。 - 請求項1に記載の半導体装置において、
前記ドレイン層、前記ドリフト層、前記第1導電型層、前記チャネル層、及び前記ソース層は、化合物半導体層である半導体装置。 - 請求項1に記載の半導体装置において、
前記第1導電型層と前記チャネル層の間に設けられた中間層を備える半導体装置。 - 請求項8に記載の半導体装置において、
前記中間層は、前記第1導電型層よりも薄い半導体装置。 - 請求項8に記載の半導体装置において、
前記中間層は、前記第1導電型層よりも不純物濃度が低い第1導電型層である半導体装置。 - 請求項8に記載の半導体装置において、
前記ゲート絶縁膜は、前記第1導電型層の厚さ方向において前記中間層と重なる領域に、前記ゲート絶縁膜のうち前記チャネル層と重なる部分よりも厚い厚膜部を有しており、
前記厚膜部は、前記底面絶縁膜につながっている半導体装置。 - 請求項1に記載の半導体装置において、
前記底面絶縁膜は、前記ゲート絶縁膜よりも厚い半導体装置。 - 請求項12に記載の半導体装置において、
前記底面絶縁膜に埋め込まれ、前記底面絶縁膜を介して前記ゲート電極とは絶縁されている埋込電極を備えている半導体装置。 - 第1導電型のドレイン層上に、前記ドレイン層よりも不純物濃度が低い第1導電型のドリフト層を形成する工程と、
前記ドリフト層上に、前記ドリフト層よりも不純物濃度が高い第1導電型層を形成する工程と、
前記第1導電型層上に、第2導電型のチャネル層を形成する工程と、
前記チャネル層に、下端がチャネル層よりも下に位置している凹部を形成する工程と、
前記凹部の側壁にゲート絶縁膜を形成すると共に、前記凹部の底面に底面絶縁膜を形成する工程と、
前記凹部内にゲート電極を埋め込む工程と、
前記チャネル層を形成した後に行われ、前記チャネル層の表層に、前記凹部の隣に位置する第1導電型のソース層を形成する工程と、
を備え、
厚さ方向で見た場合、前記第1導電型層の上端及び下端の少なくとも一方並びに中心が、前記底面絶縁膜と重なるようにする半導体装置の製造方法。
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