JP2013102168A - 集積電子構成要素を有する半導体発光装置 - Google Patents
集積電子構成要素を有する半導体発光装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
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- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】シリコンダイオード、抵抗体162、コンデンサ164、及び誘導子のような1つ又はそれよりも多くの回路要素が、半導体発光装置の半導体構造110と装置を外部構造に接続するのに使用される接続層との間に配置される。半導体構造に対するn接点114は、複数のバイアにわたって分散され、これは、1つ又はそれよりも多くの誘電体層によってp接点112から隔離されている。回路要素は、接点−誘電体層−接続層のスタックに形成される。
【選択図】図6
Description
本発明の実施形態によれば、コンデンサ、抵抗体、誘導子、及びダイオードのような回路要素は、半導体発光装置において半導体層と、装置をマウント又は他の外部装置に接続するのに使用される接続層との間で装置と一体化することができる。図4及び図5に示されている接点金属を接続層から隔離する誘電体層116及び120は、回路要素の形成を容易にする。
図6は、図7に示す回路図に従った装置の一部分の断面図である。メサが、1つ又はそれよりも多くのn型層、1つ又はそれよりも多くの発光層、及び1つ又はそれよりも多くのp型層を含むエピタキシャル構造110内に形成される。メサは、n接点114が形成されるn型層を露出させる。p接点112は、エピタキシャル構造110の残りの表面上に形成される。図の右側で、p接点112は、抵抗体162を通じて接続層122に接続され、抵抗体は、誘電体層160a及び160bによって装置内の他の金属層から隔離される。
図6に戻れば、n接点114は、図の左側でn接続層124に接続される。コンデンサ164は、p接続層122及びn接点114に接続される。誘電体層160b及び160cは、コンデンサ164の近くでn接点114及びn接続層124からp接続層122を絶縁する。
図10は、図11に示す回路図に従った装置の一部分の断面図である。図6におけるように、n接点114は、エピタキシャル構造110内に形成されたメサ内のn型領域に接続される。p接点112は、エピタキシャル構造110の残りの表面上に形成される。ESD保護ダイオード172aは、P接続層122とn接点114との間に配置される。p型シリコン層172aが、n接点114に接触し、n型シリコン層172cが、p接続層122に接触し、i型シリコン層172bが、p型層172aとn型層172cの間に配置される。代替的に、ESD保護ダイオード172は、金属層の間に挟まれたn型又はp型シリコン層を含むショットキーダイオードとすることができる。ESD保護ダイオード172のシリコン層は、例えば、プラズマ促進化学気相蒸着(PECVD)によって形成されたアモルファス層か、又はアモルファス層のPECVDの後のレーザパルス処理又は焼き鈍しによって形成された多結晶層とすることができる。PECVDによって形成されたシリコン層は、エピタキシャル構造110並びにp接点112及びn接点114のような装置の他の部分に対する損傷を回避するのに十分低い温度で堆積させることができる。例えば、ESD保護ダイオード172のシリコン層172a、172b、及び172cは、250℃未満の温度で形成することができる。図10では、明確にするために、シリコン層172aは、n金属114と直接接触する状態で示され、シリコン層172cは、接続部122と直接接触する状態で示されている。一部の実施形態では、1つ又はそれよりも多くの付加金属層をシリコン層172a及び172cと、それらが図10において接続している金属層との間に配置することができる。これらの付加金属層は、例えば、シリコン層172a及び172cのうちの一方又は両方、又は保護金属層へのオーミック接点とすることができる。
112 p接点
114 n接点
162 抵抗体
Claims (9)
- n型領域とp型領域の間に配置された発光領域を含み、pn接合を有する半導体構造と、
前記n型領域に電気的に接続した第1の接続層及び前記p型領域に電気的に接続した第2の接続層と、
前記pn接合と実質的に平行な接合を有して少なくとも1つのシリコン層を備えたダイオードを含み、前記半導体構造と前記第1の接続層及び前記第2の接続層のうちの少なくとも一方との間に配置された回路要素と、
を含むことを特徴とする装置。 - 前記ダイオード接合は、pn接合を含むことを特徴とする請求項1に記載の装置。
- 前記ダイオード接合は、金属−半導体接合を含むことを特徴とする請求項1に記載の装置。
- 前記n型領域に直接接触する第1の接点と前記p型領域に直接接触する第2の接点とを更に含み、
前記回路要素は、前記第1及び第2の接点のうちの一方と前記第1及び第2の接続層のうちの一方との間に電気的に接続されている、
ことを特徴とする請求項1に記載の装置。 - 前記回路要素は、前記第1の接点に電気的に接続したp型シリコン層及び前記第2の接続層に電気的に接続したn型シリコン層を含むことを特徴とする請求項4に記載の装置。
- 前記回路要素は、前記p型シリコン層と前記n型シリコン層の間に配置されたi型シリコン層を更に含むことを特徴とする請求項5に記載の装置。
- 前記ダイオード接合は、前記pn接合に対して逆平行構成に接続されていることを特徴とする請求項1に記載の装置。
- 前記回路要素は、第1の回路要素であり、
誘電体層によって装置の別の部分から隔離された少なくとも1つの金属層を含み、前記半導体構造と前記第1の接続層及び前記第2の接続層のうちの少なくとも一方との間に配置された第2の回路要素、
を更に含むことを特徴とする請求項1に記載の装置。 - 前記発光領域の上に配置されたカバーを更に含むことを特徴とする請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/408,841 US7994514B2 (en) | 2006-04-21 | 2006-04-21 | Semiconductor light emitting device with integrated electronic components |
US11/408,841 | 2006-04-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007136000A Division JP5462433B2 (ja) | 2006-04-21 | 2007-04-20 | 集積電子構成要素を有する半導体発光装置 |
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JP2013102168A true JP2013102168A (ja) | 2013-05-23 |
JP5813620B2 JP5813620B2 (ja) | 2015-11-17 |
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JP2007294981A (ja) | 2007-11-08 |
US7994514B2 (en) | 2011-08-09 |
JP5813620B2 (ja) | 2015-11-17 |
WO2007122550A3 (en) | 2008-03-06 |
CN101427376A (zh) | 2009-05-06 |
EP2013908A2 (en) | 2009-01-14 |
TW200746477A (en) | 2007-12-16 |
JP5744147B2 (ja) | 2015-07-01 |
US8450760B2 (en) | 2013-05-28 |
JP2014030051A (ja) | 2014-02-13 |
WO2007122550A2 (en) | 2007-11-01 |
EP2013908B1 (en) | 2019-06-12 |
CN101427376B (zh) | 2010-12-08 |
US20070246716A1 (en) | 2007-10-25 |
JP5462433B2 (ja) | 2014-04-02 |
TWI425651B (zh) | 2014-02-01 |
US20110175138A1 (en) | 2011-07-21 |
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