JP2013084719A - 窒化物半導体素子の製造方法 - Google Patents
窒化物半導体素子の製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 266
- 239000004065 semiconductor Substances 0.000 title claims abstract description 264
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 53
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 48
- 229910052594 sapphire Inorganic materials 0.000 claims description 25
- 239000010980 sapphire Substances 0.000 claims description 25
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 313
- 239000007789 gas Substances 0.000 description 48
- 229910002601 GaN Inorganic materials 0.000 description 22
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 15
- 238000005253 cladding Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000003362 semiconductor superlattice Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
【解決手段】斜めファセットを有する第2の窒化物半導体層を有機金属気相成長法により形成する工程において、有機金属気相成長装置の成長室に供給されるIII族元素ガスに対するV族元素ガスのモル流量比が240以下である窒化物半導体素子の製造方法である。
【選択図】図6
Description
まず、図1の模式的断面図に示すように、表面に凹凸を有する基板1を準備する工程を行なう。ここで、表面に凹凸を有する基板1を準備する工程は、たとえば、サファイア基板、炭化珪素基板、窒化ガリウム基板または酸化亜鉛基板などの基板1の表面上にレジストをパターニングし、ICP(Inductively coupled plasma)などのエッチング方法によって、基板1の表面の一部をエッチングすることなどにより行なうことができる。
本実施の形態においては、窒化物半導体発光ダイオード素子ではなく、窒化物半導体レーザ素子を作製した点に特徴がある。
本実施の形態においては、窒化物半導体発光ダイオード素子や窒化物半導体レーザ素子などの発光デバイスではなく、電子デバイスの一例である窒化物半導体トランジスタ素子を作製した点に特徴がある。
以下のようにして図16の模式的断面図に示す試験サンプルを作製し、n型GaNからなる導電層49の表面の転位密度および表面モフォロジーの評価を行なった。
ファセットコントロール層47の形成時のTMGガスに対するNH3ガスのモル流量比を240としたこと以外は実施例1と同様にして実施例2の試験サンプルを作製し、n型GaNからなる導電層49の表面の転位密度および表面モフォロジーの評価を行なった。その結果を表1に示す。
ファセットコントロール層47の形成時のサファイア基板41の温度を1205℃にするとともに、TMGガスに対するNH3ガスのモル流量比を90としたこと以外は実施例1と同様にして実施例3の試験サンプルを作製し、n型GaNからなる導電層49の表面の転位密度および表面モフォロジーの評価を行なった。その結果を表1に示す。
ファセットコントロール層47の形成時のサファイア基板41の温度を1205℃にするとともに、TMGガスに対するNH3ガスのモル流量比を120としたこと以外は実施例1と同様にして実施例4の試験サンプルを作製し、n型GaNからなる導電層49の表面の転位密度および表面モフォロジーの評価を行なった。その結果を表1に示す。
ファセットコントロール層47の形成時の厚さを2μmとしたこと以外は実施例1と同様にして実施例5の試験サンプルを作製し、n型GaNからなる導電層49の表面の転位密度および表面モフォロジーの評価を行なった。その結果を表1に示す。
Claims (7)
- 第1の窒化物半導体層を有機金属気相成長法により形成する工程と、
前記第1の窒化物半導体層上に窒化珪素層を形成する工程と、
前記第1の窒化物半導体層および前記窒化珪素層を覆うように、斜めファセットを有する第2の窒化物半導体層を有機金属気相成長法により形成する工程と、
前記第2の窒化物半導体層の前記斜めファセットを埋め込むように、平坦な上面を有する第3の窒化物半導体層を有機金属気相成長法により形成する工程と、を含み、
前記第2の窒化物半導体層を有機金属気相成長法により形成する工程において、有機金属気相成長装置の成長室に供給されるIII族元素ガスに対するV族元素ガスのモル流量比は240以下である、窒化物半導体素子の製造方法。 - 基板は、サファイアであって、
前記第1の窒化物半導体層を有機金属気相成長法により形成する工程の前に、前記基板の前記表面上にバッファ層を形成する工程を含み、
前記第1の窒化物半導体層を有機金属気相成長法により形成する工程は、前記第1の窒化物半導体層を前記バッファ層上に形成する工程を含む、請求項1に記載の窒化物半導体素子の製造方法。 - 前記バッファ層は、窒化アルミニウムである、請求項2に記載の窒化物半導体素子の製造方法。
- 前記基板の前記表面は、凹凸を有する、請求項2または3に記載の窒化物半導体素子の製造方法。
- 前記第1の窒化物半導体層は、斜めファセット層と、平坦層とを含む、請求項1から4のいずれかに記載の窒化物半導体素子の製造方法。
- 前記第2の窒化物半導体層の前記斜めファセットは、前記第2の窒化物半導体層の成長面に対して45°以上の傾斜を有している、請求項1から5のいずれかに記載の窒化物半導体素子の製造方法。
- 前記第2の窒化物半導体層の厚さは、2μm以上である、請求項1から6のいずれかに記載の窒化物半導体素子の製造方法。
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US13/614,589 US8697466B2 (en) | 2011-10-07 | 2012-09-13 | Method of manufacturing nitride semiconductor device |
CN201210520669.4A CN103035793B (zh) | 2011-10-07 | 2012-10-08 | 制备氮化物半导体器件的方法 |
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KR20150116252A (ko) * | 2014-04-07 | 2015-10-15 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비하는 조명 시스템 |
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CN104541381B (zh) * | 2012-10-22 | 2017-12-01 | 夏普株式会社 | 氮化物半导体发光元件 |
JP2014175496A (ja) * | 2013-03-08 | 2014-09-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
CN106463577A (zh) * | 2014-06-17 | 2017-02-22 | 崇高种子公司 | 发光元件的制造方法及发光元件 |
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CN103035793B (zh) | 2016-08-03 |
CN103035793A (zh) | 2013-04-10 |
JP5813448B2 (ja) | 2015-11-17 |
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