JP6181661B2 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
- Publication number
- JP6181661B2 JP6181661B2 JP2014543179A JP2014543179A JP6181661B2 JP 6181661 B2 JP6181661 B2 JP 6181661B2 JP 2014543179 A JP2014543179 A JP 2014543179A JP 2014543179 A JP2014543179 A JP 2014543179A JP 6181661 B2 JP6181661 B2 JP 6181661B2
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- Japan
- Prior art keywords
- layer
- nitride semiconductor
- light emitting
- concentration
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000004767 nitrides Chemical class 0.000 title claims description 121
- 239000004065 semiconductor Substances 0.000 title claims description 119
- 239000000758 substrate Substances 0.000 claims description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- 230000009467 reduction Effects 0.000 claims description 26
- 239000011777 magnesium Substances 0.000 claims description 17
- 230000007423 decrease Effects 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- 229910052594 sapphire Inorganic materials 0.000 description 19
- 239000010980 sapphire Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 12
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 238000009877 rendering Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 235000015220 hamburgers Nutrition 0.000 description 3
- 239000013598 vector Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
本発明は、基板と、基板上に設けられた第1の窒化物半導体層と、第1の窒化物半導体層上に設けられた発光層と、発光層上に設けられた第2の窒化物半導体層と、を備え、第1の窒化物半導体層は、シリコンが2×1019個/cm3以上の高濃度にドープされた高濃度シリコンドープ層と、高濃度シリコンドープ層上に貫通転位を横方向に曲げるための転位低減層とを含む窒化物半導体発光素子である。このような構成とすることにより、貫通転位を低減することにより特性を向上させた窒化物半導体発光素子を提供することができる。
Claims (4)
- 基板と、
前記基板上に設けられた第1の窒化物半導体層と、
前記第1の窒化物半導体層上に設けられた発光層と、
前記発光層上に設けられた第2の窒化物半導体層と、を備え、
前記第1の窒化物半導体層は、シリコンが2×1019個/cm3以上の高濃度にドープされた高濃度シリコンドープ層と、前記高濃度シリコンドープ層上に貫通転位を横方向に曲げるための転位低減層とを含み、
前記高濃度シリコンドープ層から前記発光層側に向かってシリコン濃度が低下していき、前記高濃度シリコンドープ層の前記発光層側の表面から前記発光層側に向かって1.5μmの箇所のシリコン濃度が1×10 17 個/cm 3 以上である、
窒化物半導体発光素子。 - 前記高濃度シリコンドープ層の厚さは0.5μm以下である、請求項1に記載の窒化物半導体発光素子。
- 前記転位低減層と前記発光層との間にマグネシウムを含む層が配置されている、請求項1または2に記載の窒化物半導体発光素子。
- 高さが20nm以上300nm以下であって、横方向の幅が40μm以上300μm以下のマクロステップを含む、請求項1から3のいずれか1項に記載の窒化物半導体発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012232681 | 2012-10-22 | ||
JP2012232681 | 2012-10-22 | ||
PCT/JP2013/073904 WO2014065019A1 (ja) | 2012-10-22 | 2013-09-05 | 窒化物半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014065019A1 JPWO2014065019A1 (ja) | 2016-09-08 |
JP6181661B2 true JP6181661B2 (ja) | 2017-08-16 |
Family
ID=50544400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014543179A Expired - Fee Related JP6181661B2 (ja) | 2012-10-22 | 2013-09-05 | 窒化物半導体発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9450150B2 (ja) |
JP (1) | JP6181661B2 (ja) |
CN (1) | CN104541381B (ja) |
WO (1) | WO2014065019A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015194382A1 (ja) * | 2014-06-17 | 2015-12-23 | エルシード株式会社 | 発光素子の製造方法及び発光素子 |
KR20170018802A (ko) | 2014-06-17 | 2017-02-20 | 엘시드 가부시끼가이샤 | 발광 소자의 제조 방법 및 발광 소자 |
JP5866044B1 (ja) * | 2014-11-13 | 2016-02-17 | エルシード株式会社 | 発光素子の製造方法及び発光素子 |
CN107924966B (zh) * | 2014-09-22 | 2020-12-22 | 夏普株式会社 | 氮化物半导体发光元件 |
US9873170B2 (en) * | 2015-03-24 | 2018-01-23 | Nichia Corporation | Method of manufacturing light emitting element |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2751963B2 (ja) | 1992-06-10 | 1998-05-18 | 日亜化学工業株式会社 | 窒化インジウムガリウム半導体の成長方法 |
JP3592553B2 (ja) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
JP3968566B2 (ja) * | 2002-03-26 | 2007-08-29 | 日立電線株式会社 | 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス |
JP2004047764A (ja) * | 2002-07-12 | 2004-02-12 | Hitachi Cable Ltd | 窒化物半導体の製造方法および半導体ウェハならびに半導体デバイス |
JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
JP2006140357A (ja) * | 2004-11-12 | 2006-06-01 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光素子 |
KR100580751B1 (ko) * | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
JP2006313771A (ja) * | 2005-05-06 | 2006-11-16 | Showa Denko Kk | Iii族窒化物半導体素子用エピタキシャル基盤 |
TWI248691B (en) * | 2005-06-03 | 2006-02-01 | Formosa Epitaxy Inc | Light emitting diode and method of fabricating thereof |
US7893449B2 (en) * | 2005-12-14 | 2011-02-22 | Showa Denko K.K. | Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same |
JP4980701B2 (ja) | 2006-12-01 | 2012-07-18 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
JP5165264B2 (ja) * | 2007-03-22 | 2013-03-21 | 浜松ホトニクス株式会社 | 窒化物半導体基板 |
JP5223439B2 (ja) * | 2007-05-28 | 2013-06-26 | ソニー株式会社 | 半導体発光素子 |
JP2009016467A (ja) * | 2007-07-03 | 2009-01-22 | Sony Corp | 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置 |
KR101459754B1 (ko) * | 2007-09-06 | 2014-11-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101449000B1 (ko) * | 2007-09-06 | 2014-10-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP4924498B2 (ja) * | 2008-03-18 | 2012-04-25 | 住友電気工業株式会社 | 窒化物系半導体発光素子、エピタキシャルウエハ、及び窒化物系半導体発光素子を作製する方法 |
JP4730422B2 (ja) * | 2008-10-24 | 2011-07-20 | 住友電気工業株式会社 | Iii族窒化物半導体電子デバイス、iii族窒化物半導体電子デバイスを作製する方法、及びiii族窒化物半導体エピタキシャルウエハ |
JP5287406B2 (ja) * | 2009-03-24 | 2013-09-11 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法 |
JP5489117B2 (ja) * | 2009-09-01 | 2014-05-14 | シャープ株式会社 | 窒化物半導体素子、窒化物半導体素子の製造方法、窒化物半導体層の製造方法および窒化物半導体発光素子 |
US8044422B2 (en) * | 2009-11-25 | 2011-10-25 | Huga Optotech Inc. | Semiconductor light emitting devices with a substrate having a plurality of bumps |
DE102009060750A1 (de) * | 2009-12-30 | 2011-07-07 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
US8742440B2 (en) * | 2010-02-19 | 2014-06-03 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting element and method for producing same |
US8765509B2 (en) * | 2010-09-30 | 2014-07-01 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride semiconductor light-emitting device |
JP5955226B2 (ja) * | 2010-12-29 | 2016-07-20 | シャープ株式会社 | 窒化物半導体構造、窒化物半導体発光素子、窒化物半導体トランジスタ素子、窒化物半導体構造の製造方法および窒化物半導体素子の製造方法 |
KR101810609B1 (ko) * | 2011-02-14 | 2017-12-20 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
JP5813448B2 (ja) * | 2011-10-07 | 2015-11-17 | シャープ株式会社 | 窒化物半導体素子の製造方法 |
JP5661660B2 (ja) * | 2012-02-07 | 2015-01-28 | 株式会社東芝 | 半導体発光素子 |
-
2013
- 2013-09-05 JP JP2014543179A patent/JP6181661B2/ja not_active Expired - Fee Related
- 2013-09-05 CN CN201380040831.5A patent/CN104541381B/zh active Active
- 2013-09-05 US US14/400,625 patent/US9450150B2/en active Active
- 2013-09-05 WO PCT/JP2013/073904 patent/WO2014065019A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20150137173A1 (en) | 2015-05-21 |
CN104541381B (zh) | 2017-12-01 |
JPWO2014065019A1 (ja) | 2016-09-08 |
CN104541381A (zh) | 2015-04-22 |
US9450150B2 (en) | 2016-09-20 |
WO2014065019A1 (ja) | 2014-05-01 |
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