JP2013070072A - エピタキシャル横方向異常成長窒化ガリウムテンプレート上での酸化亜鉛膜成長の方法 - Google Patents
エピタキシャル横方向異常成長窒化ガリウムテンプレート上での酸化亜鉛膜成長の方法 Download PDFInfo
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- JP2013070072A JP2013070072A JP2012249543A JP2012249543A JP2013070072A JP 2013070072 A JP2013070072 A JP 2013070072A JP 2012249543 A JP2012249543 A JP 2012249543A JP 2012249543 A JP2012249543 A JP 2012249543A JP 2013070072 A JP2013070072 A JP 2013070072A
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- gallium nitride
- zinc oxide
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- oxide layer
- nitride layer
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 325
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 162
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 143
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title claims abstract description 16
- 208000012868 Overgrowth Diseases 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 20
- 239000010980 sapphire Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 230000007547 defect Effects 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 230000005693 optoelectronics Effects 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 30
- 239000004065 semiconductor Substances 0.000 abstract description 25
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000000103 photoluminescence spectrum Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004630 atomic force microscopy Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000013068 control sample Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000001106 transmission high energy electron diffraction data Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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Abstract
【解決手段】この方法は以下の工程を含む:(1)サファイア基板101aを含む基板101上に窒化ガリウム層103を少なくとも1000℃の温度で成長させ;(2)SiO2マスク105を窒化ガリウム103上で配向した開口107にパターン化し;(3)成長温度と反応器を選択することによって結晶面を制御して(ELO)窒化ガリウム層のエピタキシャル横方向異常成長を行い、窒化ガリウム層103から開口107の配列を通して成長した窒化ガリウム層109(テンプレート)が形成され;(4)この窒化ガリウムテンプレート上に単結晶酸化亜鉛半導体層111を堆積させる。
【選択図】図1A
Description
(1)発明の分野
本発明は、電子デバイスや光電子デバイスの製造における高品質の酸化亜鉛膜の形成に関し、特にエピタキシャル横方向異常成長(epitaxial lateral overgrown:ELO)窒化ガリウムテンプレート上での酸化亜鉛の成長に関する。
(2)関連する技術の説明
3.37eVの室温でのエネルギーギャップを有する直接遷移型半導体として、酸化亜鉛は興味深い電気的、光学的、音響学的および化学的性質を示し、そのため光電子工学、センサーおよび触媒作用の分野において広い用途が見いだされるだろう。大きな励起子束縛エネルギー(60meV)[R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y, X. Li, L. G. Salamanca-Riba, A. A. Iliadisおよび K. A. Jones, Appl. Phys. Lett. 73, 348 (1998).]および低い出力しきい値[D. C. Reynolds, D. C. Look,および B. Jogai, Solid State Commun. 99, 873 (1996)]を有することにより、酸化亜鉛はUVおよび青色の発光デバイスのための将来有望な材料とみなされてもいる[M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo,および P. Yang, Science 292, 1897 (2001); M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Sakurai, Y. Yoshida, Z. K. Tang, P. Yu, G. K. L. Wang,および Y. Segawa, Mater. Sci. Forum 264, 1459 (1998).; D. M. Begnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen,および T. Goto, Appl. Phys. Lett. 70, 2230 (1997).]。幾つかのグループによってサファイア上へのエピタキシャル酸化亜鉛膜の成長がおこなわれたが[M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Sakurai, Y. Yoshida, Z. K. Tang, P. Yu, G. K. L. Wang,および Y.
Segawa, Mater. Sci. Forum 264, 1459 (1998).; D. M. Begnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen,および T. Goto, Appl. Phys. Lett. 70, 2230 (1997).; V. Srikant, V. Sergo,および D. R. Clarke, J. Am. Ceram. Soc. 78, 1931 (1995)]、しかしそれら二つの構造の間に高い不整合が生じた。
本発明のELO窒化ガリウムのテンプレートの上に酸化亜鉛膜が効果的に成長した。より低い欠陥密度を有する酸化亜鉛膜を得るために、高品質のELO窒化ガリウムが用いられる。さらに、熱水法によって成長する従来の単結晶酸化亜鉛の基板と比較して、本発明は、2インチおよび3インチの酸化亜鉛基板ウエーハを得るために容易に用いることができる。従って、ここで提案される製作方法は酸化亜鉛の工業的な製造にも適している。
以下の実施例は、本発明の重要な態様を示すとともにそれらの理解を助けるために示される。当業者であれば、本発明の精神と範囲から逸脱することなくそれらの変形を成しうるであろう。
よるものである。さらに、図9(b)において酸化亜鉛のPLスペクトルにおけるグリーンバンド97の強さは非常に低いことが注目され、このことは、これら作製された酸化亜鉛膜における欠陥の濃度が低いことを示していて、その理由は、酸化亜鉛におけるグリーンの放射が通常、酸化亜鉛の格子中での酸素の空孔および/または格子間のZnイオンに帰することである[例えば、J. Joo, S. G. Kwon, J. H. Yu, T. Hyeon, Adv. Mater. 17, 1873, (2005)]。従って、本発明の方法はUV LEDおよびLDの成長と作製において容易に用いることができる。
Claims (20)
- 電子デバイスであって:
第一の窒化ガリウム層;
前記第一の窒化ガリウム層の上のマスクにおける開口の配列を介して前記第一の窒化ガリウム層と接触している第二の窒化ガリウム層;そして、
前記第一の窒化ガリウム層の欠陥密度よりも低い欠陥密度を有する、前記第二の窒化ガリウム層上の被覆酸化亜鉛層;
以上の要素を有する前記電子デバイス。 - 前記被覆酸化亜鉛層がn-タイプの物質を含み、そして、前記第一の窒化ガリウム層がp-タイプの物質を含む請求項1に記載のデバイス。
- 前記被覆酸化亜鉛層が、III族元素によって約108cm−3の濃度にドーピングされている請求項1に記載のデバイス。
- 前記被覆酸化亜鉛層の露出した表面上の第一の電極、そして、
前記第一の窒化ガリウム層の露出した表面上の第二の電極、
をさらに有する請求項1に記載のデバイス。 - 前記第一の電極がインジウム又はアルミニウムの少なくとも1つを含み、
前記第二の電極がニッケル、白金、パラジウム又は金の少なくとも1つを含む
請求項4に記載のデバイス。 - さらに、基板を含み、前記第一の窒化ガリウム層が前記基板と前記第二の窒化ガリウム層の間に配置されている請求項1に記載のデバイス。
- 前記基板が、サファイア、シリコン又はSiCである請求項6に記載のデバイス。
- さらに、前記基板上に窒化ガリウムバッファ層を含み、前記窒化ガリウムバッファ層が前記基板と前記第一の窒化ガリウム層の間に配置されている請求項6に記載のデバイス。
- 前記窒化ガリウムバッファ層が30nm〜40nmの範囲の厚みを有する請求項8に記載のデバイス。
- 前記被覆酸化亜鉛層の上のn-タイプ酸化亜鉛層;
前記n-タイプ酸化亜鉛層の上の量子井戸構造;
前記n-タイプ酸化亜鉛層の露出した表面上の第一の電極;
前記量子井戸構造の上のp-タイプ酸化亜鉛層;
前記p-タイプ酸化亜鉛層の露出した表面上の第二の電極;
をさらに有する請求項1に記載のデバイス。 - 前記電子デバイスが光電子デバイスである請求項1に記載のデバイス。
- 前記電子デバイスが発光ダイオードである請求項1に記載のデバイス。
- 前記第一の窒化ガリウム層が1μm〜4μmの範囲の厚みを有する請求項1に記載のデバイス。
- 前記第一の窒化ガリウム層が108cm−2〜1010cm−2の転位密度を有する請求項1に記載のデバイス。
- 前記被覆酸化亜鉛層が約104cm−2の転位密度を有する請求項1に記載のデバイス。
- 電子デバイスを製作する方法であって:
第一の窒化ガリウム層、前記第一の窒化ガリウム層の上に置かれる第二の窒化ガリウム層及び前記第二の窒化ガリウム層の上の、前記第一の窒化ガリウム層の欠陥密度よりも低い欠陥密度を有する被覆酸化亜鉛層を含む基板を用意し;そして、
前記被覆酸化亜鉛層、前記第一の窒化ガリウム層又は前記第二の窒化ガリウム層の一以上を用いる電子デバイスを形成する;
以上の工程を含む方法。 - 前記電子デバイスの形成が、前記被覆酸化亜鉛層を備える光電子デバイスの形成を含むことを含む請求項16に記載の方法。
- 前記被覆酸化亜鉛層がn-タイプの物質を含み、そして、前記第一の窒化ガリウム層がp-タイプの物質を含む請求項16に記載の方法。
- 前記被覆酸化亜鉛層の露出した表面上における第一の電極の形成;そして、
前記第二の窒化ガリウム層の露出した表面上における第二の電極の形成;
をさらに含む請求項16に記載の方法。 - 前記被覆酸化亜鉛層の上におけるn-タイプ酸化亜鉛層の形成;
前記n-タイプ酸化亜鉛層の上における量子井戸構造の形成;
前期量子井戸構造の上におけるp-タイプ酸化亜鉛層の形成;
前記n-タイプ酸化亜鉛層の露出した表面上における第一の電極の形成;
前記p-タイプ酸化亜鉛層の露出した表面上における第二の電極の形成;
をさらに含む請求項16に記載の方法。
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US11069781B2 (en) | 2014-07-22 | 2021-07-20 | Flosfia Inc. | Crystalline semiconductor film, plate-like body and semiconductor device |
US11682702B2 (en) | 2014-07-22 | 2023-06-20 | Flosfia Inc. | Crystalline semiconductor film, plate-like body and semiconductor device |
JP7352226B2 (ja) | 2014-07-22 | 2023-09-28 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
JP2016100592A (ja) * | 2014-11-26 | 2016-05-30 | 株式会社Flosfia | 結晶性積層構造体およびその製造方法 |
JP2020074363A (ja) * | 2014-11-26 | 2020-05-14 | 株式会社Flosfia | 結晶性積層構造体 |
JP7344426B2 (ja) | 2014-11-26 | 2023-09-14 | 株式会社Flosfia | 結晶性積層構造体 |
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WO2021261494A1 (ja) * | 2020-06-22 | 2021-12-30 | 京セラ株式会社 | 半導体デバイスの製造方法、半導体デバイス、電子機器、半導体エピタキシャル基板の製造方法および半導体エピタキシャル基板 |
JP7444984B2 (ja) | 2020-06-22 | 2024-03-06 | 京セラ株式会社 | 半導体デバイスの製造方法、半導体基板、半導体デバイス、電子機器 |
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US20100102307A1 (en) | 2010-04-29 |
WO2007123496A1 (en) | 2007-11-01 |
US20120018699A1 (en) | 2012-01-26 |
CN102694087A (zh) | 2012-09-26 |
US7951639B2 (en) | 2011-05-31 |
JP5509296B2 (ja) | 2014-06-04 |
KR101038069B1 (ko) | 2011-06-01 |
JP5180189B2 (ja) | 2013-04-10 |
CN102694087B (zh) | 2015-02-25 |
JP2009535803A (ja) | 2009-10-01 |
KR20090015934A (ko) | 2009-02-12 |
EP2016614A1 (en) | 2009-01-21 |
WO2007123496A8 (en) | 2007-12-06 |
CN101467231A (zh) | 2009-06-24 |
EP2016614A4 (en) | 2014-04-09 |
CN101467231B (zh) | 2012-07-18 |
US8257999B2 (en) | 2012-09-04 |
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