CN103811592A - 发光二极管制造方法 - Google Patents
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Abstract
一种发光二极管的制造方法,包括以下的步骤:提供一个蓝宝石基板,蓝宝石基板的表面形成有多个凸出部;在蓝宝石基板的表面成长一个未掺杂GaN层,所述未掺杂GaN层完全覆盖或者不完全覆盖所述凸出部以露出凸出部的部分区域;蚀刻位于凸出部的顶部区域的未掺杂GaN层直至暴露出凸出部的顶部区域;在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。在上述方法中,通过蚀刻将位于凸出部顶部区域的未掺杂GaN层。此时,由于缺陷集中的部分被去除,所生长的发光二极管晶体缺陷将减少。
Description
技术领域
本发明涉及一种发光二极管的制造方法,尤其涉及一种可有效降低晶体缺陷的发光二极管制造方法。
背景技术
发光二极管(Light Emitting Diode,LED)是一种可将电流转换成特定波长范围的光电半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点,从而可作为光源而广泛应用于照明领域。
在LED的磊晶生长过程中,如何降低LED晶粒的晶体缺陷是人们需要考虑的问题。一种制备低缺陷的LED晶粒的方法是采用图案化的蓝宝石基板。即,在蓝宝石基板上形成多个凸出部,所述多个凸出部可使到后续磊晶过程中半导体层形成侧向生长,从而降低LED晶粒的晶体缺陷。然而,在上述过程中,缺陷容易集中在凸出部顶部的磊晶层中,从而对后续的磊晶层的成长造成影响。
发明内容
有鉴于此,有必要提供一种可有效降低晶体缺陷的发光二极管的制造方法。
一种发光二极管的制造方法,包括以下的步骤:
提供一个蓝宝石基板,蓝宝石基板的表面形成有多个凸出部;
在蓝宝石基板的表面成长一个未掺杂GaN层,所述未掺杂GaN层不完全覆盖所述凸出部以露出凸出部的部分区域;
蚀刻位于凸出部的顶部区域的未掺杂GaN层直至暴露出凸出部的顶部区域;
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
一种发光二极管的制造方法,包括以下的步骤:
提供一个蓝宝石基板,蓝宝石基板的表面形成有多个凸出部;
在蓝宝石基板的表面成长一个未掺杂GaN层直至未掺杂GaN层完全覆盖凸出部的顶部区域;
蚀刻未掺杂GaN层直至暴露出凸出部的顶部区域;
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
在上述发光二极管的制造方法中,通过蚀刻将位于凸出部顶部区域的未掺杂GaN层。此时,由于缺陷集中的部分被去除,在后续生长N型GaN层、活性层以及P型GaN层时,所述缺陷将不会影响其生长过程,从而降低后续半导体层生长过程中的缺陷。
附图说明
图1是本发明实施例所提供的发光二极管的制造方法的第一个步骤。
图2是本发明实施例所提供的发光二极管的制造方法的第二个步骤。
图3是本发明实施例所提供的发光二极管的制造方法的第三个步骤。
图4是本发明实施例所提供的发光二极管的制造方法的第四个步骤。
图5是本发明实施例所提供的发光二极管的制造方法的第五个步骤。
主要元件符号说明
蓝宝石基板 | 110 |
凸出部 | 111 |
未掺杂的GaN层 | 120、130 |
第一部分 | 121 |
第二部分 | 122 |
N型GaN层 | 140 |
活性层 | 150 |
P型GaN层 | 160 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下参照图示,对本发明的发光二极管制造方法进行进一步的说明。
请参见图1,首先提供一个蓝宝石基板110。所述蓝宝石基板110的表面具有多个凸出部111。在本实施例中,所述凸出部111的横截面为半圆形状。根据需要,所述凸出部111的横截面也可以是三角形形状,梯形形状或其他多边形形状。
请参见图2,在蓝宝石基板110的表面成长未掺杂的GaN层120,所述未掺杂的GaN层120不完全覆盖所述凸出部111以露出凸出部111的部分区域。在本实施例中,所述未掺杂的GaN层120包括位于相邻两个凸出部111之间的第一部分121以及位于凸出部111顶部的第二部分122。
请参见图3,蚀刻所述未掺杂的GaN层120,直至露出凸出部111的顶部区域。所述蚀刻的方法可以是干法蚀刻或者是湿法蚀刻。在本实施例中,所述蚀刻通过电感耦合等离子蚀刻的方法进行。根据需要,在蚀刻至露出凸出部111的顶部区域时,还可以继续对未掺杂的GaN层120蚀刻一段时间,以完全去除未掺杂的GaN层120的第二部分122。
请参见图4,在凸出部111的顶部区域以及未掺杂的GaN层120上继续成长一层未掺杂的GaN层130。
请参见图5,在未掺杂的GaN层130上依次成长N型GaN层140、活性层150以及P型GaN层160。在本实施例中,所述活性层150为多量子阱层。根据需要,也可以不成长未掺杂的GaN层130而直接在凸出部111的顶部区域以及未掺杂的GaN层120上成长N型GaN层140、活性层150以及P型GaN层160。
在上述发光二极管的制造方法中,通过蚀刻将位于凸出部111顶部的未掺杂的GaN层120的第二部分122去除,此时,由于晶体缺陷集中的部分被去除,在后续生长的N型GaN层140、活性层150以及P型GaN层160的时候,所述的缺陷将不会向上延伸而影响其晶体质量,从而降低发光二极管的晶体缺陷。
根据需要,在成长未掺杂的GaN层120的时候,所述未掺杂的GaN层120亦可生长至完全覆盖凸出部111的顶部区域。此时,在蚀刻未掺杂的GaN层120时,可以对未掺杂的GaN层120的整个表面进行蚀刻直至暴露出凸出部111的顶部区域。同时在暴露出凸出部111的顶部区域之后,还可以继续对未掺杂的GaN层120蚀刻一段时间直至未掺杂的GaN层120的表面的高度小于凸出部111的顶部的高度。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种发光二极管的制造方法,包括以下的步骤:
提供一个蓝宝石基板,蓝宝石基板的表面形成有多个凸出部;
在蓝宝石基板的表面成长一个未掺杂GaN层,所述未掺杂GaN层不完全覆盖所述凸出部以露出凸出部的部分区域;
蚀刻位于凸出部的顶部区域的未掺杂GaN层直至暴露出凸出部的顶部区域;
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
2.如权利要求1所述的发光二极管的制造方法,其特征在于,所述蚀刻未掺杂GaN层的过程以干蚀刻或者湿蚀刻的方法进行。
3.如权利要求1所述的发光二极管的制造方法,其特征在于,所述活性层为多量子阱层。
4.如权利要求1所述的发光二极管的制造方法,其特征在于,所述凸出部的截面为半圆形状、三角形形状,梯形形状或其他多边形形状。
5.如权利要求1所述的发光二极管的制造方法,其特征在于,在成长N型GaN层、活性层以及P型GaN层之前,先在凸出部的顶部区域以及未掺杂GaN层继续生长未掺杂GaN层直至所述未掺杂GaN层覆盖凸出部的顶部区域。
6.一种发光二极管的制造方法,包括以下的步骤:
提供一个蓝宝石基板,蓝宝石基板的表面形成有多个凸出部;
在蓝宝石基板的表面成长一个未掺杂GaN层直至未掺杂GaN层完全覆盖凸出部的顶部区域;
蚀刻未掺杂GaN层直至暴露出凸出部的顶部区域;
在凸出部的顶部区域以及未掺杂GaN层上依次成长N型GaN层、活性层以及P型GaN层。
7.如权利要求6所述的发光二极管的制造方法,其特征在于,所述蚀刻未掺杂GaN层的过程以干蚀刻或者湿蚀刻的方法进行。
8.如权利要求6所述的发光二极管的制造方法,其特征在于,所述活性层为多量子阱层。
9.如权利要求6所述的发光二极管的制造方法,其特征在于,所述凸出部的截面为半圆形状、三角形形状,梯形形状或其他多边形形状。
10.如权利要求6所述的发光二极管的制造方法,其特征在于,在成长N型GaN层、活性层以及P型GaN层之前,先在凸出部的顶部区域以及未掺杂GaN层继续生长未掺杂GaN层直至所述未掺杂GaN层覆盖凸出部的顶部区域。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060258027A1 (en) * | 2005-05-16 | 2006-11-16 | Akira Ohmae | Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic device |
TW200913329A (en) * | 2007-07-31 | 2009-03-16 | Epivalley Co Ltd | III-nitride semiconductor light emitting device |
US20120112239A1 (en) * | 2008-09-11 | 2012-05-10 | Yeon-Jo Choi | Nitride semiconductor light-emitting device and method for fabricating thereof |
CN102487111A (zh) * | 2010-12-04 | 2012-06-06 | 展晶科技(深圳)有限公司 | 半导体发光芯片制造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2234142A1 (en) * | 1997-04-11 | 2010-09-29 | Nichia Corporation | Nitride semiconductor substrate |
WO1999023693A1 (en) * | 1997-10-30 | 1999-05-14 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
KR100580307B1 (ko) * | 1998-07-14 | 2006-05-16 | 후지쯔 가부시끼가이샤 | 반도체 레이저 및 반도체 장치 |
JP3201475B2 (ja) * | 1998-09-14 | 2001-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP3592553B2 (ja) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
JP4032538B2 (ja) * | 1998-11-26 | 2008-01-16 | ソニー株式会社 | 半導体薄膜および半導体素子の製造方法 |
JP3679720B2 (ja) * | 2001-02-27 | 2005-08-03 | 三洋電機株式会社 | 窒化物系半導体素子および窒化物系半導体の形成方法 |
EP1244139A2 (en) * | 2001-03-23 | 2002-09-25 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of semiconductor film |
JP3966207B2 (ja) * | 2003-03-28 | 2007-08-29 | 豊田合成株式会社 | 半導体結晶の製造方法及び半導体発光素子 |
KR20050077902A (ko) * | 2004-01-29 | 2005-08-04 | 엘지전자 주식회사 | 질화물 반도체 박막의 성장 방법 |
WO2007123496A1 (en) * | 2006-04-25 | 2007-11-01 | National University Of Singapore | Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template |
TWI309481B (en) * | 2006-07-28 | 2009-05-01 | Epistar Corp | A light emitting device having a patterned substrate and the method thereof |
TWI413279B (zh) * | 2008-06-20 | 2013-10-21 | Toyoda Gosei Kk | Iii族氮化物半導體發光元件及其製造方法、以及燈 |
US8860183B2 (en) * | 2009-06-10 | 2014-10-14 | Seoul Viosys Co., Ltd. | Semiconductor substrate, semiconductor device, and manufacturing methods thereof |
TWI455304B (zh) * | 2012-01-30 | 2014-10-01 | Lextar Electronics Corp | 圖案化基板及堆疊發光二極體結構 |
CN103811612B (zh) * | 2012-11-12 | 2017-01-18 | 展晶科技(深圳)有限公司 | 发光二极管制造方法及发光二极管 |
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2012
- 2012-11-12 CN CN201210449786.6A patent/CN103811592A/zh active Pending
- 2012-11-19 TW TW101143070A patent/TW201424032A/zh unknown
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2013
- 2013-08-30 US US14/014,375 patent/US20140134774A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060258027A1 (en) * | 2005-05-16 | 2006-11-16 | Akira Ohmae | Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic device |
TW200913329A (en) * | 2007-07-31 | 2009-03-16 | Epivalley Co Ltd | III-nitride semiconductor light emitting device |
US20120112239A1 (en) * | 2008-09-11 | 2012-05-10 | Yeon-Jo Choi | Nitride semiconductor light-emitting device and method for fabricating thereof |
CN102487111A (zh) * | 2010-12-04 | 2012-06-06 | 展晶科技(深圳)有限公司 | 半导体发光芯片制造方法 |
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TW201424032A (zh) | 2014-06-16 |
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