JP2013062365A - 化合物半導体装置及びその製造方法 - Google Patents
化合物半導体装置及びその製造方法 Download PDFInfo
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- JP2013062365A JP2013062365A JP2011199657A JP2011199657A JP2013062365A JP 2013062365 A JP2013062365 A JP 2013062365A JP 2011199657 A JP2011199657 A JP 2011199657A JP 2011199657 A JP2011199657 A JP 2011199657A JP 2013062365 A JP2013062365 A JP 2013062365A
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Abstract
【解決手段】化合物半導体装置の一態様には、基板1と、基板1の上方に形成された化合物半導体層2と、が設けられている。化合物半導体層2には、第1の不純物の活性化により発生した第1導電型のキャリアを含む第1の領域2aと、第1の不純物と同一種類の第2の不純物の活性化により発生したキャリアを、第1の領域2aよりも低濃度で含有する第2の領域2bと、が設けられている。
【選択図】図1
Description
Si系半導体装置では、n型の領域及びp型の領域の形成に際して不純物の活性化の制御が容易である。これは、Si基板等に不純物をイオン注入し、アニールを行えば、容易に不純物を活性化させてキャリアを発生させることができるためである。そして、活性化の制御が容易であるため、Si基板の表面に平行な方向(面内方向)に種々の不純物活性領域を設けることが可能である。
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係る化合物半導体装置を示す断面図である。
次に、第2の実施形態について説明する。図3は、第2の実施形態に係る化合物半導体装置を示す断面図である。また、図4は、第2の実施形態に係る化合物半導体装置の全体像を示す図である。
次に、第3の実施形態について説明する。図6は、第3の実施形態に係る化合物半導体装置を示す断面図である。
次に、第4の実施形態について説明する。図7は、第4の実施形態に係る化合物半導体装置を示す断面図である。また、図8は、第4の実施形態に係る化合物半導体装置の全体像を示す図である。
次に、第5の実施形態について説明する。図10は、第5の実施形態に係る化合物半導体装置を示す断面図である。また、図11は、第5の実施形態に係る化合物半導体装置の全体像を示す図である。
次に、第6の実施形態について説明する。第6の実施形態は、第2又は第3の実施形態に係る化合物半導体装置を備えたPFC(Power Factor Correction)回路に関する。図13は、第6の実施形態に係るPFC回路を示す結線図である。
次に、第7の実施形態について説明する。第7の実施形態は、第2又は第3の実施形態に係る化合物半導体装置を備えた電源装置に関する。図14は、第7の実施形態に係る電源装置を示す結線図である。
次に、第8の実施形態について説明する。第8の実施形態は、第2又は第3の実施形態に係る化合物半導体装置を備えた高周波増幅器に関する。図15は、第8の実施形態に係る高周波増幅器を示す結線図である。
第1の実験では、第2の実施形態及び図16に示す第1の参考例について、ドレイン−ソース間の電圧Vdsとドレイン電流Idとの関係、及びドレイン−ソース間に電圧を印加し続けた場合に破壊が起こるまでの時間tについて調べた。これらの結果を図17に示す。第1の参考例のキャリア高濃度領域112a及びキャリア低濃度領域112bの形成に当たっては、キャリア高濃度領域112a用のMgドープGaN層の形成、エッチング及び活性化アニールを行った後に、キャリア低濃度領域112b用のMgドープGaN層の形成、エッチング及び活性化アニールを行った。従って、不活性化領域は存在しない。また、絶縁膜21に代えて電子供給層と接するように絶縁膜121を形成した。
第2の実験では、第4の実施形態及び図18に示す第2の参考例について、アノード−カソード間の順電圧Vacとアノード電流Iaとの関係、及びアノード−カソード間に逆電圧を印加し続けた場合に破壊が起こるまでの時間tについて調べた。これらの結果を図19に示す。第2の参考例のキャリア高濃度領域142a及びキャリア低濃度領域142bの形成に当たっては、キャリア高濃度領域142a用のMgドープGaN層の形成、エッチング及び活性化アニールを行った後に、キャリア低濃度領域142b用のMgドープGaN層の形成、エッチング及び活性化アニールを行った。従って、不活性化領域は存在しない。また、絶縁膜51に代えて電子供給層と接するように絶縁膜151を形成した。
第3の実験では、第5の実施形態及び図20に示す第3の参考例について、オフ時のドレイン−ソース間電圧Vdsとドレイン電流Idとの関係について調べた。この結果を図21に示す。第3の参考例のキャリア高濃度領域172a及びチャネル領域の形成に当たっては、キャリア高濃度領域172a用のMgドープGaN層の形成、エッチング及び活性化アニールを行った後に、意図的なドーピングを行っていないi−GaN層172bをキャリア低濃度領域72bに代えて形成した。
基板と、
前記基板の上方に形成された化合物半導体層と、
を有し、
前記化合物半導体層は、
第1の不純物の活性化により発生した第1導電型のキャリアを含む第1の領域と、
前記第1の不純物と同一種類の第2の不純物の活性化により発生したキャリアを、前記第1の領域よりも低濃度で含有する第2の領域と、
を有することを特徴とする化合物半導体装置。
前記第1導電型のキャリアがホールであることを特徴とする付記1に記載の化合物半導体装置。
前記第1の不純物及び前記第2の不純物がMg又はCであることを特徴とする付記2に記載の化合物半導体装置。
前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するソース電極及びドレイン電極と、
前記第1の領域の上方に位置するゲート電極と、
を有し、
前記第2の領域は、平面視で前記ゲート電極と前記ドレイン電極との間に位置することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記第2の領域の上方に位置するフィールドプレート電極を有することを特徴とする付記4に記載の化合物半導体装置。
前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するアノード電極及びカソード電極と、
を有し、
前記第1の領域及び前記第2の領域は、平面視で、前記第1の領域が前記アノード電極側、前記第2の領域が前記カソード電極側になるようにして前記アノード電極及び前記カソード電極の間に位置することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記基板と前記化合物半導体層との間に位置し、第2導電型のキャリアを含む下部化合物半導体層と、
前記第1の領域の上方に位置するゲート電極と、
前記第2の領域の上方に位置するソース電極と、
前記第2の領域と前記ソース電極との間に位置し、第2導電型のキャリアを含む上部化合物半導体層と、
前記基板の下方に位置するドレイン電極と、
を有することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
付記1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
付記1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
基板の上方に不純物を含有する化合物半導体層を形成する工程と、
前記化合物半導体層の第1の領域にレーザ光を第1の照射密度で照射することにより、当該第1の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
前記化合物半導体層の前記第1の領域とは異なる第2の領域にレーザ光を前記第1の照射密度とは異なる第2の照射密度で照射することにより、当該第2の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
を有することを特徴とする化合物半導体装置の製造方法。
前記第1導電型のキャリアがホールであることを特徴とする付記10に記載の化合物半導体装置の製造方法。
前記不純物がMg又はCであることを特徴とする付記11に記載の化合物半導体装置の製造方法。
前記化合物半導体層を形成する工程の前に、
前記基板の上方に電子走行層を形成する工程と、
前記電子走行層の上方に電子供給層を形成する工程と、
を有し、
更に、
前記電子走行層の上方にソース電極及びドレイン電極を形成する工程と、
前記第1の領域の上方にゲート電極を形成する工程と、
を有し、
前記第2の領域を、平面視で前記ゲート電極と前記ドレイン電極との間に位置させることを特徴とする付記10乃至12のいずれか1項に記載の化合物半導体装置の製造方法。
前記第2の領域の上方にフィールドプレート電極を形成する工程を有することを特徴とする付記13に記載の化合物半導体装置の製造方法。
前記化合物半導体層を形成する工程の前に、
前記基板の上方に電子走行層を形成する工程と、
前記電子走行層の上方に電子供給層を形成する工程と、
を有し、
更に、前記電子走行層の上方にアノード電極及びカソード電極を形成する工程を有し、
前記第1の領域及び前記第2の領域を、平面視で、前記第1の領域が前記アノード電極側、前記第2の領域が前記カソード電極側になるようにして前記アノード電極及び前記カソード電極の間に位置させることを特徴とする付記10乃至12のいずれか1項に記載の化合物半導体装置の製造方法。
前記化合物半導体層を形成する工程の前に、
前記基板の上方に第2導電型のキャリアを含む下部化合物半導体層を形成する工程を有し、
更に、
前記第1の領域の上方にゲート電極を形成する工程と、
前記第2の領域の上方に第2導電型のキャリアを含む上部化合物半導体層を形成する工程と、
前記上部化合物半導体層の上方にソース電極を形成する工程と、
前記基板の下方にドレイン電極を形成する工程と、
を有することを特徴とする付記10乃至12のいずれか1項に記載の化合物半導体装置の製造方法。
2:化合物半導体層
2a、12a、42a、72a:キャリア高濃度領域
2b、12b、42b、72b:キャリア低濃度領域
12、42、72:Mgドープ化合物半導体層
14、44:電子走行層
15、45:中間層
16、46:電子供給層
20g、80g:ゲート電極
20s、80s:ソース電極
20d、80d:ドレイン電極
40a:アノード電極
40c:カソード電極
74、76:n型GaN層
75:n-GaN層
Claims (10)
- 基板と、
前記基板の上方に形成された化合物半導体層と、
を有し、
前記化合物半導体層は、
第1の不純物の活性化により発生した第1導電型のキャリアを含む第1の領域と、
前記第1の不純物と同一種類の第2の不純物の活性化により発生したキャリアを、前記第1の領域よりも低濃度で含有する第2の領域と、
を有することを特徴とする化合物半導体装置。 - 前記第1導電型のキャリアがホールであることを特徴とする請求項1に記載の化合物半導体装置。
- 前記第1の不純物及び前記第2の不純物がMg又はCであることを特徴とする請求項2に記載の化合物半導体装置。
- 前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するソース電極及びドレイン電極と、
前記第1の領域の上方に位置するゲート電極と、
を有し、
前記第2の領域は、平面視で前記ゲート電極と前記ドレイン電極との間に位置することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。 - 前記第2の領域の上方に位置するフィールドプレート電極を有することを特徴とする請求項4に記載の化合物半導体装置。
- 前記基板と前記化合物半導体層との間に位置する電子走行層と、
前記電子走行層と前記化合物半導体層との間に位置する電子供給層と、
前記電子走行層の上方に位置するアノード電極及びカソード電極と、
を有し、
前記第1の領域及び前記第2の領域は、平面視で、前記第1の領域が前記アノード電極側、前記第2の領域が前記カソード電極側になるようにして前記アノード電極及び前記カソード電極の間に位置することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。 - 前記基板と前記化合物半導体層との間に位置し、第2導電型のキャリアを含む下部化合物半導体層と、
前記第1の領域の上方に位置するゲート電極と、
前記第2の領域の上方に位置するソース電極と、
前記第2の領域と前記ソース電極との間に位置し、第2導電型のキャリアを含む上部化合物半導体層と、
前記基板の下方に位置するドレイン電極と、
を有することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。 - 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
- 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
- 基板の上方に不純物を含有する化合物半導体層を形成する工程と、
前記化合物半導体層の第1の領域にレーザ光を第1の照射密度で照射することにより、当該第1の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
前記化合物半導体層の前記第1の領域とは異なる第2の領域にレーザ光を前記第1の照射密度とは異なる第2の照射密度で照射することにより、当該第2の領域内で前記不純物を活性化させて第1導電型のキャリアを発生させる工程と、
を有することを特徴とする化合物半導体装置の製造方法。
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JP5739774B2 (ja) | 2015-06-24 |
KR101340126B1 (ko) | 2013-12-10 |
TW201314897A (zh) | 2013-04-01 |
US20130062666A1 (en) | 2013-03-14 |
CN103000666B (zh) | 2015-09-16 |
TWI485849B (zh) | 2015-05-21 |
KR20130029007A (ko) | 2013-03-21 |
CN103000666A (zh) | 2013-03-27 |
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