JP2012231165A - シリコン−オン−インシュレーター構造及びバルク基板に対するSiGeの堆積 - Google Patents
シリコン−オン−インシュレーター構造及びバルク基板に対するSiGeの堆積 Download PDFInfo
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 187
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title description 6
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 51
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- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims abstract description 10
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Abstract
【解決手段】アモルファスSiGe層600が、トリシラン及びGeH4からCVDによって、ドーパントの1以下のモノレイヤー上に堆積される。これらのアモルファスSiGe層600は、融解または固相エピタキシー(SPE)プロセスによってシリコン上に再結晶される。融解プロセスは、好ましくは、全体のゲルマニウム含量を希釈するようなゲルマニウムの拡散も引き起こし、そして絶縁体の上層のシリコン500を実質的に消費する。SPEプロセスは、下地のシリコン500中へのゲルマニウムの拡散を用いてまたは用いずに実際され得、従って、SOI及び従来の半導体基板に適用可能である。
【選択図】図5
Description
本発明は、一般に、集積回路製造における、シリコンゲルマニウム−オン−インシュレーター(silicon−germanium−on−insulator)(「SGOI」)技術を含む、歪み緩和(strain relaxed)シリコンゲルマニウム上のストレインドシリコン(strained silicon)に関する。
デバイスパフォーマンスを改善するために、従来の「バルク」シリコンウエハを、いわゆるシリコン−オン−インシュレーター(「SOI」)ウエハに置換することが開発される傾向にある。SOI技術の利点は、トランジスタが作られるシリコンがウエハの残りの部分と電気的接触しておらず、その結果、トランジスタ間でのクロストーク(cross−talk)がウエハバルクを通して生じないことである。これらのトランジスタは、互いからより有効に電気的に絶縁される。
発明の1つの局面に従って、歪み緩和SiGe−オン−インシュレーター構造上にストレインドシリコンを形成するための方法は、CVDによってSOI基板上にアモルファスSiGe層を形成すること、及びSiGe層の融解を引き起こす温度で基板をアニーリングする工程を含んでいる。SiGe層由来のGeは、アニーリング温度で、下地のSi層中に拡散し、酸化物上に緩和SiGe層をもたらす。
好ましいプロセス
本明細書中に用いられる場合、「単結晶」または、「エピタキシャル」は、主とする大きな結晶構造(その中に許容される数の欠陥を有していてもよい)を記述するために用いられる。当業者は、層の結晶度がアモルファスから多結晶、そして単結晶へと連続的に落ちることを理解している;当業者は、低密度の欠陥が存在していても、結晶構造が単結晶またはエピタキシャルと考えられ得る場合を容易に決定することができる。
完全な歪み緩和SiGe層は、融解凝固プロセスを使用することによりSOI基板上に形成され得る。(その開示が本明細書中に参考として援用される、Sugiiら、J.Vac.Sci.Technol.B20(5):1891−1896(2002);Kutsukakeら、Jpn.J.Appl.Phys.42:L232−L234(2003)を参照のこと) )。薄いSiGe及びシリコン層が従来のSOIウエハ上で成長し、最上部のシリコン層が酸化し、そして高温アニーリングが実施されて、SiGe層を部分的に融解する。凝固により歪み緩和SiGe層が製造される。この層は、SOI基板上の最上部のシリコン層中へのゲルマニウムの拡散の結果として、均一な組成を有する。従って、緩和SiGe層は、SOIウエハの酸化物の直接上に残留する。得られる層は、好ましくは、約1×105cm−2未満、より好ましくは約1×103cm−2未満、そしてなおより好ましくは約1000cm−2未満の欠陥密度を有する。不運にも、Kutsukake及びSugiiにより開示されるような分子線エピタキシー(MBE)も従来の前駆物質を使用するCVDも、この文脈におけるα−SiGeの商業的に満足な堆積をすることができない。
例えば、SiGe層は、SOI基板上の自然酸化膜(native oxide)に対して堆積され得る。好ましくは、酸化物は、シリコン表面上のモノレイヤーの少なくとも約4分の1、より好ましくはモノレイヤーの少なくとも約半分である。一方、完全なモノレイヤー未満(less than a full monolayer)が、好ましくは、幾分かの単結晶Siを露出させておくために、シリコン表面上に形成される。特定の実施形態において、モノレイヤーの半分の酸化物は、酸素環境中で、堆積温度で加熱することによって、SOI基板上に形成される。下記のようなSiGe層を融解するための高温処理の際、酸化物が還元され、凝固の際、均一なSiGe層の形成が導かれる。
発明の別の局面において、歪み緩和SiGe層は、固相エピタキシーによって形成される。この実施形態において、エピタキシャル成長はSPEプロセスの間にSiGe/Si界面で分断(disrupt)される。好ましくは、エピタキシャル成長は、SiGe/Si界面に結晶構造が介在することにより分断される。この分断は、例えば、Si層自体の欠陥によって、またはSi層上に形成または堆積された物質によって引き起こされ得るが、これらに限定されない。
本発明の別の局面において、歪み緩和SiGe層は、Si上のSiGeのヘテロエピタキシー、その後の発泡剤の注入及びSiGe層を緩和するための引き続くアニーリングによって形成される。歪み緩和の間の欠陥の形成は、下部Si層と上部SiGe層との間の結晶界面の分断によって防がれる。例えば、その開示が本明細書中に参考として援用される、Luysberg J.Applied Physics October 15th 2002;Herzogら、IEEE Electron Device Letters 23:485(2002);及びHuangeら、Appl.Phys.Lett 78:1267(2001)を参照のこと。
Claims (26)
- シリコン−オン−インシュレーター(SOI)基板上で、化学気相成長(CVD)法によって、第1のゲルマニウム濃度を有するアモルファスSiGe層をドーパントの1以下のモノレイヤー上に堆積すること;
該アモルファスSiGe層上にSiO2層を堆積すること;及び
該SiO2層を堆積した後、1000℃より高い温度で該アモルファスSiGe層を融解することにより、該第1のゲルマニウム濃度よりも低い第2のゲルマニウム濃度を有するSiGe部分を有するSiGe−オン−インシュレーター基板を形成すること;
を含む、
SiGe−オン−インシュレーター(SiGe−on insulator)基板を形成する方法。 - 該アモルファスSiGe層が、トリシラン及びGeH4である前駆体を用いて堆積される、請求項1に記載の方法。
- 該アモルファスSiGe層が400℃〜600℃の間の堆積温度で堆積される、請求項2に記載の方法。
- 前記ドーパントが、B、P、As、Sb及びCからなる群より選択される、請求項1に記載の方法。
- 前記アモルファスSiGe層が、SPEまたはRNGに起因するその再成長の速度より速い速度で堆積される、請求項1に記載の方法。
- 該SOI基板が、50Å〜500Åの間の厚さの内在するシリコン層を有する、請求項1に記載の方法。
- 前記SiGe層が、20%〜60%の間のゲルマニウム濃度を有する、請求項1に記載の方法。
- SiO2層の堆積が、アモルファスシリコン層を堆積すること及び該アモルファスシリコン層を酸化することを含む、請求項1に記載の方法。
- CVDによって、第一Si層上に、トリシラン及びゲルマニウム前駆物質からSiGe層を堆積し、それによって該第一Si層と該SiGe層との間に界面(interface)を形成すること;
該堆積されたSiGe層を歪み緩和単結晶構造へと変換すること;及び
該歪み緩和SiGe層上に第二Si層をヘテロエピタキシャリーに堆積して、ストレインド第二Si層を形成すること、
を含み、該歪み緩和SiGe層が107未満の貫通転位を有し、
前記ストレインドSiGe層の歪み緩和単結晶構造への変換が、該SiGe層を堆積する前であり且つ固相エピタキシーを実施する前に、1以下のモノレイヤーのドーパントを存在させることを含む、緩和SiGe層上にストレインドシリコン層を形成する方法。 - 前記SiGe層が、堆積される際、アモルファスである、請求項9に記載の方法。
- 前記SiGe層が、堆積される際、ストレインドヘテロエピタキシャル層である、請求項9に記載の方法。
- 前記SiGe層が、該SiGe層の堆積の間、その温度で、その臨界厚さ未満の厚さで堆積される、請求項11に記載の方法。
- 前記ストレインドSiGe層の歪み緩和単結晶構造への変換が、前記第一Si層と前記SiGe層との間の界面の下に発泡剤を注入(implant)することを含む、請求項11に記載の方法。
- 前記発泡剤が、He及びHからなる群より選択される、請求項13に記載の方法。
- 前記ストレインドSiGe層の変換が、前記SiGe層をアニーリングすることをさらに含む、請求項14に記載の方法。
- 前記界面が、前記第一Si層上の、モノレイヤーの半分以下の酸化物の存在によって分断される、請求項9に記載の方法。
- 前記界面が、不整合転位の存在によって分断される、請求項9に記載の方法。
- 前記第一Si層がSOI基板の一部であり、そして前記ストレインドSiGe層の歪み緩和単結晶構造への変換が、該SiGe層を融解することを含む、請求項9に記載の方法。
- 融解が、ゲルマニウムを、前記SiGe層から前記第一Si層を通って酸化物界面まで拡散させることを含む、請求項18に記載の方法。
- 該SOI基板が、酸化物の部分を覆っているシリコンの部分を有し、
該アモルファスSiGe層を融解することが、該SOI基板のシリコンの部分を融解することをさらに含む、請求項1に記載の方法。 - 該SOI基板が、酸化物の部分を覆っているシリコンの部分を有し、
該アモルファスSiGe層を融解することが、該SOI基板のシリコンの部分にゲルマニウムを拡散させることをさらに含む、請求項1に記載の方法。 - 該SOI基板が、酸化物の部分を覆っているシリコンの部分を有し、
該SiGe−オン−インシュレーター基板のSiGeの部分を、該酸化物の部分に接触させる、請求項1に記載の方法。 - 該SiGe−オン−インシュレーター基板のSiGeの部分が、105cm−2未満の欠陥密度を有する、請求項22に記載の方法。
- 該SiGe−オン−インシュレーター基板のSiGeの部分が、103cm−2未満の欠陥密度を有する、請求項1に記載の方法。
- 該第2のゲルマニウム濃度が50%以下である、請求項1に記載の方法。
- 該SiGe−オン−インシュレーター基板のSiGeの部分が、実質的に均一なゲルマニウム濃度を有する、請求項1に記載の方法。
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JPH0444431B2 (ja) * | 1984-02-01 | 1992-07-21 | Hitachi Ltd | |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US8927363B2 (en) | 2013-05-17 | 2015-01-06 | International Business Machines Corporation | Integrating channel SiGe into pFET structures |
US9818761B2 (en) | 2015-06-25 | 2017-11-14 | International Business Machines Corporation | Selective oxidation for making relaxed silicon germanium on insulator structures |
Also Published As
Publication number | Publication date |
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JP5601595B2 (ja) | 2014-10-08 |
US20070042572A1 (en) | 2007-02-22 |
EP1647046A2 (en) | 2006-04-19 |
US7208354B2 (en) | 2007-04-24 |
US20050054175A1 (en) | 2005-03-10 |
WO2005010946A2 (en) | 2005-02-03 |
JP2007505477A (ja) | 2007-03-08 |
WO2005010946A3 (en) | 2006-09-08 |
KR20060056331A (ko) | 2006-05-24 |
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