JP2012033809A - Mos型半導体装置 - Google Patents
Mos型半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000010410 layer Substances 0.000 claims abstract description 86
- 239000002344 surface layer Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 19
- 229910052796 boron Inorganic materials 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 230000003071 parasitic effect Effects 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 13
- 108091006146 Channels Proteins 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/70—Bipolar devices
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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Abstract
【解決手段】n-ドリフト層1の表面層に選択的に配置され、曲率状の基底部を有するpベース領域17と、pベース領域17の表面層に選択的に配置されるn形第1領域6と、n形第1領域6表面と前記n-ドリフト層1表面に挟まれた前記pベース領域17の表面にゲート絶縁膜9を介して被覆されるゲート電極8と、n形第1領域6表面と前記pベース領域17表面とに導電接触する金属電極13を備えるMOS型半導体装置において、前記pベース領域17のネットドーピング濃度が、複数のウェル領域を有する形状を備えているMOS型半導体装置とする。
【選択図】 図2
Description
2 n+ドレイン層
6 n+ソース領域
6a n+エミッタ領域
7 チャネル形成領域
8 ゲート電極
9 ゲート絶縁膜
10 層間絶縁膜
12 ドレイン電極
12a コレクタ電極
13 ソース電極
13a エミッタ電極
14 p+コレクタ層
15 n+バッファ層
16 アバランシェ発生部分
17 pベース領域
20 接合面
21 第2のp+領域
22 p+コンタクト領域
30 寄生バイポーラトランジスタ
31a 酸化膜
31b LOCOS酸化膜
32 n領域
33 中央部
34 アバランシェ電流
35 ネットドーピング濃度線
36 酸化膜跡
41 コンタクト窓
Claims (10)
- 第一導電形ドリフト層の表面層に選択的に配置され、曲率状の基底部を有する第二導電形のベース領域と、該ベース領域の表面層に選択的に配置される第一導電形の第1領域と、該第1領域表面と前記ドリフト層表面に挟まれた前記ベース領域の表面にゲート絶縁膜を介して設置されるゲート電極と、前記第1領域表面と前記ベース領域の中央部表面とに導電接触する金属電極を備えるMOS型半導体装置において、前記ベース領域のネットドーピング濃度が、複数のウェル領域を有する形状を備えていることを特徴とするMOS型半導体装置。
- 前記ベース領域において、隣り合う前記複数のウェル領域の間の部分のネットドーピング濃度は、前記ドリフト層表面に水平な方向における前記ベース領域端部のネットドーピング濃度よりも高いことを特徴とする請求項1記載のMOS型半導体装置。
- 前記ベース領域の表面層に選択的に配置され前記ベース領域より高不純物濃度で、前記第1領域より深く、さらに前記第1領域直下に領域端が達する第二導電形のコンタクト領域を備えることを特徴とする請求項1記載のMOS型半導体装置。
- 前記第二導電形コンタクト領域が凹状および凸状の形状を備えることを特徴とする請求項3記載のMOS型半導体装置。
- 前記ベース領域の平面パターンが曲率状の角部を有する多角形または円形またはストライプ状であることを特徴とする請求項1に記載のMOS型半導体装置。
- MOS型半導体装置がMOS型電界効果トランジスタであることを特徴とする請求項1に記載のMOS型半導体装置。
- MOS型半導体装置が絶縁ゲート型バイポーラトランジスタであることを特徴とする請求項1に記載のMOS型半導体装置。
- 前記第一導電形ドリフト層の表面層に前記第二導電形のベース領域を形成する前に、前記ベース領域となる表面の領域内に酸化膜を形成し、前記酸化膜をマスクにして、前記第一導電形ドリフト層より高不純物濃度の第一導電形層を形成することを特徴とする請求項1記載のMOS型半導体装置の製造方法。
- 前記複数のウェル領域を有するベース領域を、前記第1領域を形成する前に、前記第1領域を形成するために設けられる開口部からボロンをイオン注入し、熱拡散させることにより形成することを特徴とするMOS半導体装置の製造方法。
- 前記請求項4に記載の前記第二導電形コンタクト領域を、LOCOS酸化膜を除去した後に形成される凹部を含む表面を開口部としてボロンをイオン注入し、熱処理することにより形成することを特徴とするMOS半導体装置の製造方法。
Priority Applications (3)
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JP2010173563A JP5789928B2 (ja) | 2010-08-02 | 2010-08-02 | Mos型半導体装置およびその製造方法 |
US13/195,516 US20120025262A1 (en) | 2010-08-02 | 2011-08-01 | MOS Type Semiconductor Device and Method of Manufacturing Same |
CN201110230128.3A CN102347366B (zh) | 2010-08-02 | 2011-08-02 | Mos型半导体器件及其制造方法 |
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JP2010173563A JP5789928B2 (ja) | 2010-08-02 | 2010-08-02 | Mos型半導体装置およびその製造方法 |
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JP5789928B2 JP5789928B2 (ja) | 2015-10-07 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2016113865A1 (ja) * | 2015-01-14 | 2017-07-13 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
WO2019077878A1 (ja) * | 2017-10-17 | 2019-04-25 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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WO2019077878A1 (ja) * | 2017-10-17 | 2019-04-25 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Also Published As
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CN102347366B (zh) | 2016-05-18 |
CN102347366A (zh) | 2012-02-08 |
JP5789928B2 (ja) | 2015-10-07 |
US20120025262A1 (en) | 2012-02-02 |
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