JP2012009725A - 半導体装置の製造方法、半導体装置およびカメラモジュール - Google Patents
半導体装置の製造方法、半導体装置およびカメラモジュール Download PDFInfo
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- JP2012009725A JP2012009725A JP2010145886A JP2010145886A JP2012009725A JP 2012009725 A JP2012009725 A JP 2012009725A JP 2010145886 A JP2010145886 A JP 2010145886A JP 2010145886 A JP2010145886 A JP 2010145886A JP 2012009725 A JP2012009725 A JP 2012009725A
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
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- 229910052905 tridymite Inorganic materials 0.000 claims description 4
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- 238000011109 contamination Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 238000000151 deposition Methods 0.000 description 2
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- 239000011521 glass Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
【解決手段】半導体基板1の周縁部を研削する研削工程と、研削工程により露出した表面8を含む前記半導体基板1の表面に、絶縁膜6である保護膜9を形成する保護膜形成工程と、を含む。
【選択図】図2
Description
図1は、第1の実施の形態にかかる半導体装置の製造方法の加工対象の半導体基板の一例を示す断面図である。図1に示すように、本実施の形態の半導体基板は、シリコン基板1と、半導体領域2と、受光素子3と、ゲート4と、ソース・ドレイン5と、層間絶縁膜6と、配線7と、で構成される。また、図示は省略するがシリコン基板1内には撮像素子としてフォトダイオードが形成されている。
Claims (5)
- 半導体基板の周縁部を研削する研削工程と、
前記研削工程により露出した表面を含む前記半導体基板の表面に、絶縁膜である保護膜を形成する保護膜形成工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記半導体基板は、エッチングストッパ層として機能するストッパ層を内部に有することとし、
前記保護膜を形成した後の前記半導体基板に、他の基板を前記保護膜側から貼り合わせることにより貼り合わせ基板を形成する貼合工程と、
前記ストッパ層をエッチングストッパ層として、前記貼り合わせ基板の前記半導体基板側からエッチングを行なうことにより前記半導体基板を薄化する薄化工程と、
前記ストッパ層を、薬液を用いて除去する除去工程と、
をさらに含み、
前記保護膜を前記薬液に対して耐性を有する材質とする、
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記保護膜をSiO2膜、Si3N4膜、PSG膜、SOG膜、MSQ膜、ポリイミド膜のうちいずれか1つ以上とする、
ことを特徴とする請求項1または2に記載の半導体装置の製造方法。 - 第1の基板と、
前記第1の基板上に形成された絶縁膜と、
前記絶縁膜に接着層を介して接着された第2の基板と、
を備えることを特徴とする半導体装置。 - 撮像素子を備える半導体装置と、外部からの光を前記撮像素子へ入射させるレンズモジュールと、を備えるカメラモジュールであって、
前記半導体装置は、
第1の基板と、
前記第1の基板上に形成された絶縁膜と、
前記絶縁膜に接着層を介して接着された第2の基板と、
を備える、
ことを特徴とするカメラモジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010145886A JP5542543B2 (ja) | 2010-06-28 | 2010-06-28 | 半導体装置の製造方法 |
TW100119277A TWI453905B (zh) | 2010-06-28 | 2011-06-01 | Manufacturing method of semiconductor device |
US13/169,548 US8748316B2 (en) | 2010-06-28 | 2011-06-27 | Method of manufacturing semiconductor device, semiconductor device, and camera module |
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JP2010145886A JP5542543B2 (ja) | 2010-06-28 | 2010-06-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012009725A true JP2012009725A (ja) | 2012-01-12 |
JP5542543B2 JP5542543B2 (ja) | 2014-07-09 |
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JP2010145886A Expired - Fee Related JP5542543B2 (ja) | 2010-06-28 | 2010-06-28 | 半導体装置の製造方法 |
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US (1) | US8748316B2 (ja) |
JP (1) | JP5542543B2 (ja) |
TW (1) | TWI453905B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013108657A1 (ja) * | 2012-01-17 | 2013-07-25 | ソニー株式会社 | 半導体装置の製造方法 |
JP2013149712A (ja) * | 2012-01-18 | 2013-08-01 | Toshiba Corp | 半導体装置の製造方法 |
US9893116B2 (en) | 2014-09-16 | 2018-02-13 | Toshiba Memory Corporation | Manufacturing method of electronic device and manufacturing method of semiconductor device |
JP2020013911A (ja) * | 2018-07-19 | 2020-01-23 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5814805B2 (ja) | 2012-01-18 | 2015-11-17 | 株式会社東芝 | 半導体装置の製造システムおよび製造方法 |
US9570431B1 (en) | 2015-07-28 | 2017-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor wafer for integrated packages |
JP7421292B2 (ja) * | 2019-09-11 | 2024-01-24 | キオクシア株式会社 | 半導体装置の製造方法 |
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2011
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- 2011-06-27 US US13/169,548 patent/US8748316B2/en not_active Expired - Fee Related
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Publication number | Publication date |
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JP5542543B2 (ja) | 2014-07-09 |
US20110317050A1 (en) | 2011-12-29 |
TWI453905B (zh) | 2014-09-21 |
US8748316B2 (en) | 2014-06-10 |
TW201210008A (en) | 2012-03-01 |
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