JP2011171730A - ケイ素含有膜を調製するための方法 - Google Patents
ケイ素含有膜を調製するための方法 Download PDFInfo
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- JP2011171730A JP2011171730A JP2011022459A JP2011022459A JP2011171730A JP 2011171730 A JP2011171730 A JP 2011171730A JP 2011022459 A JP2011022459 A JP 2011022459A JP 2011022459 A JP2011022459 A JP 2011022459A JP 2011171730 A JP2011171730 A JP 2011171730A
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- film
- silicon
- butoxysilane
- deposition
- dielectric film
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- 238000000034 method Methods 0.000 title claims abstract description 117
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 42
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 155
- 239000002243 precursor Substances 0.000 claims description 111
- 229910052760 oxygen Inorganic materials 0.000 claims description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 51
- 239000001301 oxygen Substances 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 34
- 238000000231 atomic layer deposition Methods 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 19
- 238000010926 purge Methods 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 16
- -1 methoxylane Chemical compound 0.000 claims description 15
- 125000003118 aryl group Chemical group 0.000 claims description 14
- 239000012686 silicon precursor Substances 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 125000002252 acyl group Chemical group 0.000 claims description 10
- HZXFQABHGXHWKC-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[SiH2]OC(C)(C)C HZXFQABHGXHWKC-UHFFFAOYSA-N 0.000 claims description 9
- 125000004122 cyclic group Chemical group 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- RBCYCMNKVQPXDR-UHFFFAOYSA-N phenoxysilane Chemical compound [SiH3]OC1=CC=CC=C1 RBCYCMNKVQPXDR-UHFFFAOYSA-N 0.000 claims description 4
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 4
- BVNZLSHMOBSFKP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxysilane Chemical compound CC(C)(C)O[SiH3] BVNZLSHMOBSFKP-UHFFFAOYSA-N 0.000 claims description 3
- BQYNOZYISQGMOB-UHFFFAOYSA-N CC(C)CO[SiH3] Chemical compound CC(C)CO[SiH3] BQYNOZYISQGMOB-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- ZZHNUBIHHLQNHX-UHFFFAOYSA-N butoxysilane Chemical compound CCCCO[SiH3] ZZHNUBIHHLQNHX-UHFFFAOYSA-N 0.000 claims description 3
- YEMJITXWLIHJHJ-UHFFFAOYSA-N di(propan-2-yloxy)silane Chemical compound CC(C)O[SiH2]OC(C)C YEMJITXWLIHJHJ-UHFFFAOYSA-N 0.000 claims description 3
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 claims description 3
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 claims description 3
- AYLOLAANSIXPJA-UHFFFAOYSA-N diphenoxysilicon Chemical compound C=1C=CC=CC=1O[Si]OC1=CC=CC=C1 AYLOLAANSIXPJA-UHFFFAOYSA-N 0.000 claims description 3
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- HCOKJWUULRTBRS-UHFFFAOYSA-N propan-2-yloxysilane Chemical compound CC(C)O[SiH3] HCOKJWUULRTBRS-UHFFFAOYSA-N 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- UCSBCWBHZLSFGC-UHFFFAOYSA-N tributoxysilane Chemical compound CCCCO[SiH](OCCCC)OCCCC UCSBCWBHZLSFGC-UHFFFAOYSA-N 0.000 claims description 3
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 3
- QCKKBOHAYRLMQP-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[SiH](OC(C)(C)C)OC(C)(C)C QCKKBOHAYRLMQP-UHFFFAOYSA-N 0.000 claims description 3
- UPJJIHSCJCNYLO-UHFFFAOYSA-N dibutoxysilane Chemical compound CCCCO[SiH2]OCCCC UPJJIHSCJCNYLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- ODNAHAGEJPTVGB-UHFFFAOYSA-N bis(2-methylbutan-2-yloxy)silane Chemical compound CCC(C)(C)O[SiH2]OC(C)(C)CC ODNAHAGEJPTVGB-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 24
- 229910052799 carbon Inorganic materials 0.000 abstract description 24
- 239000011248 coating agent Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 58
- 230000008021 deposition Effects 0.000 description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- 239000006117 anti-reflective coating Substances 0.000 description 7
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- LISDBLOKKWTHNH-UHFFFAOYSA-N 1,3,5-Trisilacyclohexan Natural products C1[SiH2]C[SiH2]C[SiH2]1 LISDBLOKKWTHNH-UHFFFAOYSA-N 0.000 description 2
- LZESIEOFIUDUIN-UHFFFAOYSA-N 2-[amino(tert-butyl)silyl]-2-methylpropane Chemical compound CC(C)(C)[SiH](N)C(C)(C)C LZESIEOFIUDUIN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004013 NO 2 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 150000001638 boron Chemical class 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012707 chemical precursor Substances 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
- 238000000005 dynamic secondary ion mass spectrometry Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
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- 125000003709 fluoroalkyl group Chemical group 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
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- 229920006395 saturated elastomer Polymers 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 125000005353 silylalkyl group Chemical group 0.000 description 2
- DVHMVRMYGHTALQ-UHFFFAOYSA-N silylhydrazine Chemical compound NN[SiH3] DVHMVRMYGHTALQ-UHFFFAOYSA-N 0.000 description 2
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- 239000002904 solvent Substances 0.000 description 2
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- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- PUNGSQUVTIDKNU-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-1,3,5,7,9,2$l^{3},4$l^{3},6$l^{3},8$l^{3},10$l^{3}-pentaoxapentasilecane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O[Si](C)O1 PUNGSQUVTIDKNU-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 108010042833 7,8-diaminopelargonic acid aminotransferase Proteins 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- MTFSYWLHSFZGBL-UHFFFAOYSA-N C[SiH2]C(=O)[SiH2]C[SiH2]C(=O)[SiH2]C Chemical compound C[SiH2]C(=O)[SiH2]C[SiH2]C(=O)[SiH2]C MTFSYWLHSFZGBL-UHFFFAOYSA-N 0.000 description 1
- RLSSTOAWPHAUTK-UHFFFAOYSA-N C[SiH3].C1(=CC=CC=C1)NC(C)=O.C1(=CC=CC=C1)NC(C)=O.C1(=CC=CC=C1)NC(C)=O Chemical compound C[SiH3].C1(=CC=CC=C1)NC(C)=O.C1(=CC=CC=C1)NC(C)=O.C1(=CC=CC=C1)NC(C)=O RLSSTOAWPHAUTK-UHFFFAOYSA-N 0.000 description 1
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- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- ZZHXBZOWQPNBCA-UHFFFAOYSA-N N-(propan-2-ylamino)silylpropan-2-amine Chemical compound CC(C)N[SiH2]NC(C)C ZZHXBZOWQPNBCA-UHFFFAOYSA-N 0.000 description 1
- ZVXBAMHPFUBBBZ-UHFFFAOYSA-N N-[(tert-butylamino)-methylsilyl]-2-methylpropan-2-amine Chemical compound C[SiH](NC(C)(C)C)NC(C)(C)C ZVXBAMHPFUBBBZ-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- VISCLWKQWGKGDE-UHFFFAOYSA-N N-methylacetamide silane Chemical compound [SiH4].CNC(C)=O VISCLWKQWGKGDE-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005670 ethenylalkyl group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 230000010076 replication Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 238000006557 surface reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- KNSVRQSOPKYFJN-UHFFFAOYSA-N tert-butylsilicon Chemical compound CC(C)(C)[Si] KNSVRQSOPKYFJN-UHFFFAOYSA-N 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
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- XOAJIYVOSJHEQB-UHFFFAOYSA-N trimethyl trimethoxysilyl silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)OC XOAJIYVOSJHEQB-UHFFFAOYSA-N 0.000 description 1
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- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
【解決手段】ケイ素、酸化物そして任意選択で窒素、炭素、水素およびホウ素を含む誘電体膜を形成する方法が提供される。さらに、例えば半導体ウェハーなどの加工対象物の上に誘電体膜またはコーティングを形成するための方法が提供される。
【選択図】図1
Description
本特許出願は、2010年2月4日付けの米国仮特許出願第61/301,375号の利益を請求するものである。
反応チャンバ内に基材の少なくとも1つの表面を提供するステップと、
該少なくとも1つの表面上に、以下の式I、IIおよびIII
を含み、誘電体膜がXPSにより測定した場合に約5原子%未満の窒素または炭素を含む方法が提供される。膜が窒素または炭素を含む実施形態において、形成ステップ中に窒素および/または炭素源も同じく導入されてよい。これらの実施形態では、NH3、N2O、NH2(CH3)およびその組合せなどの材料を含む(ただしこれに限定されない)例示的窒素源を、形成ステップおよび/または追加の導入ステップ中に導入してよい。炭素および窒素源は、一緒に1つの供給源であってもよい。
a.基材をALD反応器内に設置するステップと、
b.該反応器内に以下の式I、IIおよびIII
c.前記ALD反応器を気体でパージするステップと、
d.酸素源を前記ALD反応器内に導入するステップと、
e.前記ALD反応器を気体でパージするステップと、
f.所望の厚みの膜が得られるまでステップb〜dを反復するステップと
を含み、誘電体膜がXPSにより測定した場合に約5原子量%未満の炭素および/または窒素を含む方法が提供される。
a.基材を反応器内に設置するステップと、
b.該反応器内に以下の式I、IIおよびIII
を含み、誘電体膜が、XPSにより測定した場合に約0原子量%〜約30原子量%の炭素および/または窒素を含む方法が提供される。
a.以下の式I、IIおよびIII
b.未反応の少なくとも1つのケイ素含有前駆物質をパージガスを用いてパージするステップと、
c.任意選択で酸素源を加熱した基材上に導入し、吸着した少なくとも1つのケイ素含有前駆物質と反応させるステップと、
d.任意選択で未反応の酸素源をパージするステップと
を含むALD堆積方法を用いて形成される。
前駆物質DTBOSおよび酸素源としての酸素を用いて、例示的酸化ケイ素膜を堆積した。各膜についての堆積条件は表1に提供されている。各膜の特性は、表2に提供されている。
本明細書中で記述されている方法および組成を用いて形成された窒素を含まない二酸化ケイ素膜は、エリプソメータを用いてその厚みが測定されている。現在利用可能な方法を用いて堆積された窒素二酸化ケイ素膜の低い均一性とは対照的に、本発明で記述している方法を用いて堆積された膜は、基材(またはウェーハ)内部で膜均一性の大幅な改善を示す。前記発明を用いた膜と既存の方法を用いた膜の間の膜厚均一性の比較が、図2に提供されており、図中、X軸はウェハー基材における測定位置を表わし、y軸は膜の平均厚みからの各点における厚みの偏差を表わす。図2から、本明細書中で記述されている方法を用いて堆積された膜が、その他の膜に比べてウェハー基材全体にわたってはるかに均一性が高いことがわかる。
薄膜の厚み均一性に関して一般に使用される公式、すなわち
均一性=(最大厚み−最小厚み)/(2*平均)*100%
本明細書中で記述されている方法を用いて形成された酸化ケイ素膜の誘電定数は、図3に示されたC−Vプロットから導出される。膜の公知の厚みおよび使用された水銀プローブの接触面積について、膜の誘電定数は4.47であることが分かる。
以下の実施例においては、別段の記述のないかぎり、抵抗率が中程度(8〜12Ωcm)の単結晶シリコンウェハー基材上に堆積された試料膜から特性を得た。堆積温度は200、300および400℃であった。
Claims (14)
- 酸素源、窒素源またはそれらの組合せから選択される少なくとも1つの供給源が前記反応チャンバ内に導入される、請求項1に記載の方法。
- 前記形成ステップが、循環化学気相成長、プラズマ化学気相成長または原子層成長から選択される少なくとも1つである、請求項1に記載の方法。
- 前記ケイ素前駆物質がジ−tert−ブトキシシランを含む、請求項1に記載の方法。
- 前記ケイ素前駆物質がジ−tert−ペントキシシランを含む、請求項1に記載の方法。
- 前記酸素源が酸素を含む、請求項2に記載の方法。
- 前記酸素源がオゾンを含む、請求項2に記載の方法。
- a.基材をALD反応器内に設置するステップと、
b.該ALD反応器内に以下の式I、IIおよびIII
c.前記ALD反応器を気体でパージするステップと、
d.酸素源を前記ALD反応器内に導入するステップと、
e.前記ALD反応器を気体でパージするステップと、
f.所望の厚みの誘電体膜が得られるまでステップb〜dを反復するステップと
を含み、前記誘電体膜がXPSにより測定した場合に約30原子量%以下の窒素を含む、原子層成長プロセスを介してケイ素および酸素を含む誘電体膜を形成する方法。 - 窒素源が前記反応チャンバ内に導入される、請求項1に記載の方法。
- 熱CVDプロセスを使用し、前記誘電体膜がXPSにより測定した場合に約30原子量%以下の窒素を含む、請求項1に記載の方法。
- 酸素源、窒素源またはそれらの組合せから選択される少なくとも1つの供給源が前記反応チャンバ内に導入される、請求項10に記載の方法。
- SiaObNcCdHeBfの組成を有し、式中、aが10〜50原子%、bが10〜70原子%、cが0〜30原子%、dが0〜30原子%、eが0〜50原子%、そしてfが0〜30原子%である、請求項1に記載の方法から生成された膜。
- tert−ブトキシシラン、イソプロポキシシラン、エトキシシラン、n−ブトキシシラン、イソブトキシシラン、メトキシラン、フェノキシシラン、ジ−tert−ブトキシシラン、ジイソ−プロポキシシラン、ジエトキシシラン、ジ−n−ブトキシシラン、ジイソブトキシシラン、ジメトキシシラン、ジフェノキシシラン、トリ−tert−ブトキシシラン、トリイソ−プロポキシシラン、トリエトキシシラン、トリ−n−ブトキシシラン、トリイソ−ブトキシシラン、トリメトキシシランまたはトリフェノキシシランを収納する高純度低デッドスペースバルブを有する入口および出口を備えた電解研磨されたステンレス鋼容器。
- 光学デバイス、磁気情報記憶装置、支持用材料または基材上のコーティング、微小電気機械システム(MEMS)、ナノ電気機械システム、薄膜トランジスタ(TFT)および液晶ディスプレイ(LCD)からなる群から選択される、請求項1に記載の方法を用いて製造されたデバイス。
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JP5746119B2 (ja) | 2015-07-08 |
US9502234B2 (en) | 2016-11-22 |
US20150249007A1 (en) | 2015-09-03 |
CN103397307B (zh) | 2017-07-07 |
JP2018014503A (ja) | 2018-01-25 |
JP5746120B2 (ja) | 2015-07-08 |
JP6480527B2 (ja) | 2019-03-13 |
KR20110090838A (ko) | 2011-08-10 |
JP2013016858A (ja) | 2013-01-24 |
CN103397307A (zh) | 2013-11-20 |
CN102191479A (zh) | 2011-09-21 |
KR20130032343A (ko) | 2013-04-01 |
KR101950956B1 (ko) | 2019-02-21 |
JP2013021360A (ja) | 2013-01-31 |
US8703625B2 (en) | 2014-04-22 |
KR20170004942A (ko) | 2017-01-11 |
KR20140105701A (ko) | 2014-09-02 |
CN102191479B (zh) | 2013-09-18 |
JP6359999B2 (ja) | 2018-07-18 |
KR101950952B1 (ko) | 2019-02-21 |
US20110215445A1 (en) | 2011-09-08 |
JP2015156514A (ja) | 2015-08-27 |
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