JP2010515275A5 - - Google Patents

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Publication number
JP2010515275A5
JP2010515275A5 JP2009544291A JP2009544291A JP2010515275A5 JP 2010515275 A5 JP2010515275 A5 JP 2010515275A5 JP 2009544291 A JP2009544291 A JP 2009544291A JP 2009544291 A JP2009544291 A JP 2009544291A JP 2010515275 A5 JP2010515275 A5 JP 2010515275A5
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JP
Japan
Prior art keywords
semiconductor wafer
vias
forming
conductive
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009544291A
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English (en)
Japanese (ja)
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JP2010515275A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2007/089061 external-priority patent/WO2008083284A2/en
Publication of JP2010515275A publication Critical patent/JP2010515275A/ja
Publication of JP2010515275A5 publication Critical patent/JP2010515275A5/ja
Pending legal-status Critical Current

Links

JP2009544291A 2006-12-29 2007-12-28 スルーチップ接続を有するフロントエンドプロセス済ウェハ Pending JP2010515275A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88267106P 2006-12-29 2006-12-29
PCT/US2007/089061 WO2008083284A2 (en) 2006-12-29 2007-12-28 Front-end processed wafer having through-chip connections

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013115456A Division JP5686851B2 (ja) 2006-12-29 2013-05-31 スルーチップ接続を有するフロントエンドプロセス済ウェハ

Publications (2)

Publication Number Publication Date
JP2010515275A JP2010515275A (ja) 2010-05-06
JP2010515275A5 true JP2010515275A5 (zh) 2010-10-28

Family

ID=39589215

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009544291A Pending JP2010515275A (ja) 2006-12-29 2007-12-28 スルーチップ接続を有するフロントエンドプロセス済ウェハ
JP2013115456A Active JP5686851B2 (ja) 2006-12-29 2013-05-31 スルーチップ接続を有するフロントエンドプロセス済ウェハ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013115456A Active JP5686851B2 (ja) 2006-12-29 2013-05-31 スルーチップ接続を有するフロントエンドプロセス済ウェハ

Country Status (5)

Country Link
EP (1) EP2097924A4 (zh)
JP (2) JP2010515275A (zh)
KR (1) KR101088926B1 (zh)
CN (1) CN101663742B (zh)
WO (1) WO2008083284A2 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007044685B3 (de) * 2007-09-19 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektronisches System und Verfahren zur Herstellung eines dreidimensionalen elektronischen Systems
FR2987937B1 (fr) * 2012-03-12 2014-03-28 Altatech Semiconductor Procede de realisation de plaquettes semi-conductrices
JP5925006B2 (ja) * 2012-03-26 2016-05-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03218653A (ja) * 1989-11-13 1991-09-26 Mitsubishi Electric Corp エアーブリッジ金属配線を具えた半導体装置およびその製造方法
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
EP1351288B1 (en) * 2002-04-05 2015-10-28 STMicroelectronics Srl Process for manufacturing an insulated interconnection through a body of semiconductor material and corresponding semiconductor device
JP4285629B2 (ja) * 2002-04-25 2009-06-24 富士通株式会社 集積回路を搭載するインターポーザ基板の作製方法
JP3748844B2 (ja) * 2002-09-25 2006-02-22 Necエレクトロニクス株式会社 半導体集積回路およびそのテスト方法
JP4322508B2 (ja) * 2003-01-15 2009-09-02 新光電気工業株式会社 半導体装置の製造方法
JP4145301B2 (ja) * 2003-01-15 2008-09-03 富士通株式会社 半導体装置及び三次元実装半導体装置
SE526366C3 (sv) * 2003-03-21 2005-10-26 Silex Microsystems Ab Elektriska anslutningar i substrat
JP3891299B2 (ja) * 2003-05-06 2007-03-14 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、半導体デバイス、電子機器
JP4340517B2 (ja) * 2003-10-30 2009-10-07 Okiセミコンダクタ株式会社 半導体装置及びその製造方法
TWI228295B (en) * 2003-11-10 2005-02-21 Shih-Hsien Tseng IC structure and a manufacturing method
JP4114660B2 (ja) * 2003-12-16 2008-07-09 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、回路基板、電子機器
KR100569590B1 (ko) * 2003-12-30 2006-04-10 매그나칩 반도체 유한회사 고주파 반도체 장치 및 그 제조방법
TW200535918A (en) * 2004-03-09 2005-11-01 Japan Science & Tech Agency Semiconductor device and methods for fabricating the same, semiconductor system having laminated structure, semiconductor interposer, and semiconductor system
JP3875240B2 (ja) 2004-03-31 2007-01-31 株式会社東芝 電子部品の製造方法
JP4492196B2 (ja) * 2004-04-16 2010-06-30 セイコーエプソン株式会社 半導体装置の製造方法、回路基板、並びに電子機器
US7249992B2 (en) * 2004-07-02 2007-07-31 Strasbaugh Method, apparatus and system for use in processing wafers
JP2006049557A (ja) * 2004-08-04 2006-02-16 Seiko Epson Corp 半導体装置
US7906363B2 (en) * 2004-08-20 2011-03-15 Zycube Co., Ltd. Method of fabricating semiconductor device having three-dimensional stacked structure
JP4524156B2 (ja) * 2004-08-30 2010-08-11 新光電気工業株式会社 半導体装置及びその製造方法
US7767493B2 (en) * 2005-06-14 2010-08-03 John Trezza Post & penetration interconnection
US7838997B2 (en) * 2005-06-14 2010-11-23 John Trezza Remote chip attachment
US7488680B2 (en) 2005-08-30 2009-02-10 International Business Machines Corporation Conductive through via process for electronic device carriers

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