JP2010283331A - プラズマ処理装置及びプラズマ処理方法 - Google Patents
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Abstract
【解決手段】真空引き可能になされた筒体状の処理容器24と、被処理体Wを保持して処理容器内へ挿脱される保持手段28と、ガスを供給するガス供給手段46,48と、処理容器の長さ方向に沿って設けられてガスを高周波電力により発生したプラズマにより活性化する活性化手段58とを有して、被処理体に対してプラズマ処理を施すようになされたプラズマ処理装置において、高周波を遮断するために処理容器の周囲を囲むようにして設けられると共に接地された筒体状のシールド筐体72と、プラズマ処理中にシールド筐体と処理容器との間の空間部82に沿って冷却気体を流す冷却機構74とを備える。
【選択図】図1
Description
請求項1及びこれを引用する請求項に係る発明によれば、筒体状の処理容器内に保持手段に保持された複数の被処理体を収容して必要なガスを導入し、これらの被処理体を活性化手段により発生したプラズマによってガスの活性種を形成し、この活性種によって被処理体にプラズマ処理を施すようにしたプラズマ処理装置において、高周波を遮断するために処理容器の周囲を囲むようにして設けられると共に接地された筒体状のシールド筐体と、プラズマ処理中にシールド筐体と処理容器との間の空間部に沿って冷却気体を流す冷却機構とを備え、プラズマ処理中に冷却機構により処理容器の外側に沿って冷却気体を流して冷却するようにしたので、シールド筐体と処理容器との間の空間部にプラズマから発生した熱が籠もることがなくなり、その結果、プロセス温度が室温程度の低い温度帯域でプラズマ処理する際に、そのプロセス温度を低く維持してプラズマ成膜処理等のプラズマ処理の再現性を向上させることができる。
次に、上述したような冷却機構74を設けた本発明のプラズマ処理装置を用いて複数回のプラズマによるバッチ処理を連続的に行った時の処理容器24とシールド筐体72との間に形成される空間部82の温度変化を測定したので、その評価結果について説明する。ここでは比較のために、図14に示すような円筒体状の断熱材付きの加熱ヒータ(ヒータ自体は駆動せず)を有する従来のプラズマ処理装置でプラズマによるバッチ処理も行ったので、その結果についても説明する。
次に本発明に変形実施例1について説明する。先の実施例では、成膜処理中には冷却機構74を用いてシールド筐体72内の空間部82へ冷却気体を必ず流すようにしていたが、このプラズマ処理装置22を設置する環境、例えばクリーンルーム内の温度環境等によっては、スループット向上の観点より冷却気体を流さない方がよい場合もある。具体的には、成膜処理を繰り返して行うと、処理容器24の内壁にも剥がれ落ちるとパーティクルの原因となる不要な膜が累積して堆積することになるが、一般的には、この不要な膜が剥がれ落ちる前に、定期的に、或いは不定期的にクリーニングガスを用いて上記不要な膜を除去するクリーニング操作が行われている。
次に、上記変形実施例1について検証実験を行ったので、その内容について説明する。図9は本発明の変形実施例1におけるシールド筐体内雰囲気と大気との差圧とシールド筐体の内部の温度との関係を示すグラフ、図10は差圧が0Paの時のラン数とパーティクル数及び累積膜厚との関係を示すグラフ、図11は差圧が60Paの時のラン数とパーティクル数及び累積膜厚との関係を示すグラフ、図12は差圧が130Paの時のラン数とパーティクル数及び累積膜厚との関係を示すグラフ、図13はプラズマ処理(ラン)終了後のシールド筐体内の温度変化を示すグラフである。ここでは、上記差圧を0〜−250Paまで変化させており、その中の数箇所においてプラズマ成膜処理を行ってパーティクルの評価を行っている。
24 処理容器
28 ウエハボート(保持手段)
46 第1のガス供給手段
48 第2のガス供給手段
58 活性化手段
62 プラズマ形成ボックス
64 プラズマ電極
66 高周波電源
72 シールド筐体
74 冷却機構
76 吸気ヘッダ部
78 排気ヘッダ部
80 排気源
82 空間部
83 工場ダクト
86 気体流通ダクト
88 気体流通孔
90 気体導入口
92 冷却気体案内ダクト
98 端板
100 気体流通孔
102 排気ボックス
104 気体排気口
106 排気路
130 弁機構
132 圧力調整弁
134 第1の開閉弁
136 吸気路
138 第2の開閉弁
140 温度測定手段
140A〜140D 熱電対
W 半導体ウエハ(被処理体)
Claims (22)
- 真空引き可能になされた筒体状の処理容器と、
複数の被処理体を保持して前記処理容器内へ挿脱される保持手段と、
前記処理容器内へガスを供給するガス供給手段と、
前記処理容器の長さ方向に沿って設けられて前記ガスを高周波電力により発生したプラズマにより活性化する活性化手段とを有して、
前記被処理体に対してプラズマ処理を施すようになされたプラズマ処理装置において、
高周波を遮断するために前記処理容器の周囲を囲むようにして設けられると共に接地された筒体状のシールド筐体と、
前記プラズマ処理中に前記シールド筐体と前記処理容器との間の空間部に沿って冷却気体を流す冷却機構と、
を備えるように構成したことを特徴とするプラズマ処理装置。 - 前記冷却機構は、
前記シールド筐体の一端に設けられて前記冷却気体を取り込むための吸気ヘッダ部と、
前記シールド筐体の他端に設けられて前記シールド筐体内の雰囲気を排気するために排気源に接続された排気ヘッダ部と、を有することを特徴とする請求項1記載のプラズマ処理装置。 - 前記排気源は、装置内の雰囲気を排出するための工場ダクトであることを特徴とする請求項2記載のプラズマ処理装置。
- 前記排気源は、排気ポンプであることを特徴とする請求項2記載のプラズマ処理装置。
- 前記吸気ヘッダ部は、
前記シールド筐体の側壁にその周方向に沿って設けられた気体流通ダクトと、
前記気体流通ダクトと前記シールド筐体内とを連通させるために前記シールド筐体の側壁に、その周方向に沿って所定の間隔で形成された気体流通孔と、
前記気体流通ダクトに設けられて前記冷却気体を取り込むための気体導入口と、
を有することを特徴とする請求項2乃至4のいずれか一項に記載のプラズマ処理装置。 - 前記気体流通孔には、複数の孔が形成されたパンチングメタルが取り付けられていることを特徴とする請求項5記載のプラズマ処理装置。
- 前記排気ヘッダ部は、
前記シールド筐体の端面を塞ぐ端板に形成された気体流通孔と、
該気体流通孔を囲んで覆うようにして設けられた箱状の排気ボックスと、
該排気ボックスに設けられた気体排気口と、
該気体排気口に接続されて前記排気源に連絡される排気路と、
を有することを特徴とする請求項2乃至6のいずれか一項に記載のプラズマ処理装置。 - 前記気体流通孔には、複数の孔が形成されたパンチングメタルが取り付けられていることを特徴とする請求項7記載のプラズマ処理装置。
- 前記冷却気体は、工場であるクリーンルーム内の雰囲気であることを特徴とする請求項2乃至8のいずれか一項に記載のプラズマ処理装置。
- 前記処理容器は、鉛直方向に縦長に設置されていることを特徴とする請求項2乃至8のいずれか一項に記載のプラズマ処理装置。
- 前記吸気ヘッダ部は、前記シールド筐体の下端部に設けられ、前記排気ヘッダ部は、前記シールド筐体の上端部に設けられることを特徴とする請求項10記載のプラズマ処理装置。
- 前記吸気ヘッダ部は、前記シールド筐体の上端部に設けられ、前記排気ヘッダ部は、前記シールド筐体の下端部に設けられることを特徴とする請求項10記載のプラズマ処理装置。
- 前記空間部内の雰囲気の温度を測定する温度測定手段と、
前記排気ヘッダ部と前記排気源との間に設けられた排気路と、
前記排気路の途中に介設され、前記プラズマ処理装置をスタンバイ状態に維持した状態で前記空間部の雰囲気を予め設定された排気風量で排気した時の前記温度測定手段の測定温度が予め定められた閾値温度よりも低い場合には、前記プラズマ処理時には閉じられた状態になされる弁機構と、
を備えたことを特徴とする請求項1乃至12のいずれか一項に記載のプラズマ処理装置。 - 前記弁機構は、圧力調整弁と開閉弁とを含むことを特徴とする請求項13記載のプラズマ処理装置。
- 前記吸気ヘッダ部には、給気路が接続され、該給気路の途中には、前記プラズマ処理装置をスタンバイ状態に維持した状態で前記空間部の雰囲気を予め設定された排気風量で排気した時の前記温度測定手段の測定温度が予め定められた閾値温度よりも低い場合には、前記プラズマ処理時には閉じられた状態になされる開閉弁が介設されていることを特徴とする請求項13又は14記載のプラズマ処理装置。
- 前記ガスは、成膜用のガスであるアミノシラン系ガスを含むことを特徴とする請求項13乃至15のいずれか一項に記載のプラズマ処理装置。
- 前記閾値温度は33℃であることを特徴とする請求項13乃至16のいずれか一項に記載のプラズマ処理装置。
- 請求項1乃至17のいずれか一項に記載のプラズマ処理装置を用いて被処理体にプラズマ処理を施すプラズマ処理方法において、
前記プラズマ処理装置をスタンバイ状態に維持した状態で処理容器とシールド筐体との間に形成される空間部の雰囲気を予め設定された排気風量で排気した時の前記空間部の雰囲気の温度を測定し、この測定温度が予め定められた閾値温度よりも低い場合には、前記空間部に冷却気体を流さないようにした状態で前記プラズマ処理を行うようにしたことを特徴とするプラズマ処理方法。 - 前記空間部の雰囲気の温度が、前記閾値温度以上の場合には、前記冷却気体を流した状態で、或いは前記冷却気体を流さない状態で、前記プラズマ処理を行うようにしたことを特徴とする請求項18記載のプラズマ処理方法。
- 前記プラズマ処理装置をスタンバイ状態に維持した状態で処理容器とシールド筐体との間に形成される空間部の雰囲気を予め設定された排気風量で排気した時の前記空間部の雰囲気の温度を測定し、この測定温度が予め定められた閾値温度よりも低い場合には、前記処理容器内にクリーニングガスを流す時にも、前記空間部には冷却気体を流さないようにしたことを特徴とする請求項18又は19記載のプラズマ処理方法。
- 使用するガスには、成膜用のガスであるアミノシラン系ガスが含まれることを特徴とする請求項18乃至20のいずれか一項に記載のプラズマ処理方法。
- 前記閾値温度は33℃であることを特徴とする請求項18乃至21のいずれか一項に記載のプラズマ処理方法。
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TW201126603A (en) | 2011-08-01 |
KR20100119726A (ko) | 2010-11-10 |
US8683943B2 (en) | 2014-04-01 |
US20140150882A1 (en) | 2014-06-05 |
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