JP2010278232A - 半導体撮像装置 - Google Patents
半導体撮像装置 Download PDFInfo
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- JP2010278232A JP2010278232A JP2009129262A JP2009129262A JP2010278232A JP 2010278232 A JP2010278232 A JP 2010278232A JP 2009129262 A JP2009129262 A JP 2009129262A JP 2009129262 A JP2009129262 A JP 2009129262A JP 2010278232 A JP2010278232 A JP 2010278232A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000003384 imaging method Methods 0.000 title claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 44
- 239000011229 interlayer Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【課題】画素領域とその他の領域の半導体素子の特性を揃えることが可能な半導体撮像装置を提供する。
【解決手段】画素領域2には、複数の光電変換素子が配置されている。回路領域3,4,5は、画素領域2の周辺に配置されている。銅配線20a、20b、20c、23cは、画素領域2及び回路領域3、4、5に配置されている。キャップ層21、24は、銅配線20a、20b、20c、23c上に配置され、画素領域及び回路領域の銅配線上以外のキャップ層が除去されている。
【選択図】図1
Description
Claims (5)
- 複数の光電変換素子が配置された画素領域と、
前記画素領域の周辺に配置された回路領域と、
前記画素領域及び前記回路領域に配置された銅配線と、
前記銅配線上に配置されたキャップ層と
を具備し、
前記画素領域及び前記回路領域の前記銅配線上以外の前記キャップ層が除去されていることを特徴とする半導体撮像装置。 - 前記キャップ層は、シリコン窒化膜により構成されていることを特徴とする請求項1記載の半導体撮像装置。
- 前記キャップ層は銅配線上のみに形成されることを特徴とする請求項1記載の半導体撮像装置。
- 前記画素領域の暗時特性と前記回路領域の暗時特性がほぼ等しく設定されていることを特徴とする請求項1記載の半導体撮像装置。
- 前記回路領域は、ダミー画素領域、黒基準領域、ロジック回路領域を含むことを特徴とする請求項1記載の半導体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009129262A JP5367459B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体撮像装置 |
TW099105528A TWI422022B (zh) | 2009-05-28 | 2010-02-25 | Semiconductor imaging device and manufacturing method thereof |
CN2010101330053A CN101901820B (zh) | 2009-05-28 | 2010-03-10 | 半导体摄像器件及其制造方法 |
US12/725,511 US8816413B2 (en) | 2009-05-28 | 2010-03-17 | Semiconductor imaging device with which semiconductor elements of pixel area and other areas has same characteristics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009129262A JP5367459B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010278232A true JP2010278232A (ja) | 2010-12-09 |
JP5367459B2 JP5367459B2 (ja) | 2013-12-11 |
Family
ID=43219273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009129262A Expired - Fee Related JP5367459B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8816413B2 (ja) |
JP (1) | JP5367459B2 (ja) |
CN (1) | CN101901820B (ja) |
TW (1) | TWI422022B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013182893A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | イメージセンサ及びその製造方法 |
JP2013182892A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | イメージセンサ及びその製造方法 |
JP2016051714A (ja) * | 2014-08-28 | 2016-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
EP3054485A1 (en) | 2015-02-06 | 2016-08-10 | Renesas Electronics Corporation | Image pickup device and method for manufacturing the same |
JP2018032868A (ja) * | 2017-10-11 | 2018-03-01 | キヤノン株式会社 | 撮像装置 |
JP2022186615A (ja) * | 2021-06-03 | 2022-12-15 | シャープ株式会社 | 光電変換装置およびx線撮像装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5513872B2 (ja) | 2009-12-18 | 2014-06-04 | 株式会社東芝 | 固体撮像装置 |
JP5693924B2 (ja) * | 2010-11-10 | 2015-04-01 | 株式会社東芝 | 半導体撮像装置 |
FR2990294A1 (fr) * | 2012-05-04 | 2013-11-08 | St Microelectronics Crolles 2 | Procede de fabrication d'une puce de circuit integre |
FR3009433B1 (fr) * | 2013-08-01 | 2015-09-11 | St Microelectronics Crolles 2 | Capteur d'images a illumination face arriere a faible courant d'obscurite |
JP6598436B2 (ja) * | 2014-08-08 | 2019-10-30 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
JP6821291B2 (ja) * | 2015-05-29 | 2021-01-27 | キヤノン株式会社 | 光電変換装置、撮像システムおよび光電変換装置の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003324189A (ja) * | 2002-05-01 | 2003-11-14 | Sony Corp | 固体撮像素子及び固体撮像装置、並びにこれらの製造方法 |
JP2009099626A (ja) * | 2007-10-12 | 2009-05-07 | Toshiba Corp | 撮像装置 |
Family Cites Families (9)
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US8218052B2 (en) * | 2003-03-07 | 2012-07-10 | Iconix Video, Inc. | High frame rate high definition imaging system and method |
JP2004311902A (ja) | 2003-04-10 | 2004-11-04 | Toshiba Corp | 半導体装置 |
KR100614793B1 (ko) * | 2004-09-23 | 2006-08-22 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법. |
KR20070051642A (ko) * | 2005-11-15 | 2007-05-18 | 삼성전자주식회사 | 표시 기판, 이의 제조 방법 및 이를 갖는 표시 장치 |
KR100741099B1 (ko) * | 2005-12-20 | 2007-07-20 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
US20070232074A1 (en) * | 2006-03-31 | 2007-10-04 | Kramadhati Ravi | Techniques for the synthesis of dense, high-quality diamond films using a dual seeding approach |
US7544982B2 (en) * | 2006-10-03 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same |
US7544992B2 (en) * | 2007-05-16 | 2009-06-09 | United Microelectronics Corp. | Illuminating efficiency-increasable and light-erasable embedded memory structure |
JP2008199059A (ja) | 2008-05-01 | 2008-08-28 | Sony Corp | 固体撮像素子及びその製造方法 |
-
2009
- 2009-05-28 JP JP2009129262A patent/JP5367459B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-25 TW TW099105528A patent/TWI422022B/zh not_active IP Right Cessation
- 2010-03-10 CN CN2010101330053A patent/CN101901820B/zh not_active Expired - Fee Related
- 2010-03-17 US US12/725,511 patent/US8816413B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003324189A (ja) * | 2002-05-01 | 2003-11-14 | Sony Corp | 固体撮像素子及び固体撮像装置、並びにこれらの製造方法 |
JP2009099626A (ja) * | 2007-10-12 | 2009-05-07 | Toshiba Corp | 撮像装置 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013182893A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | イメージセンサ及びその製造方法 |
JP2013182892A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | イメージセンサ及びその製造方法 |
US9281328B2 (en) | 2012-02-29 | 2016-03-08 | Kabushiki Kaisha Toshiba | Image sensor that includes a boundary region formed between a logic circuit region and an image-sensing element region and manufacturing method thereof |
JP2016051714A (ja) * | 2014-08-28 | 2016-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
EP3054485A1 (en) | 2015-02-06 | 2016-08-10 | Renesas Electronics Corporation | Image pickup device and method for manufacturing the same |
JP2016146376A (ja) * | 2015-02-06 | 2016-08-12 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
US9773830B2 (en) | 2015-02-06 | 2017-09-26 | Renesas Electronics Corporation | Image pickup device and method for manufacturing the same |
US10068941B2 (en) | 2015-02-06 | 2018-09-04 | Renesas Electronics Corporation | Image pickup device and method for manufacturing the same |
JP2018032868A (ja) * | 2017-10-11 | 2018-03-01 | キヤノン株式会社 | 撮像装置 |
JP2022186615A (ja) * | 2021-06-03 | 2022-12-15 | シャープ株式会社 | 光電変換装置およびx線撮像装置 |
US11784208B2 (en) | 2021-06-03 | 2023-10-10 | Sharp Kabushiki Kaisha | Photoelectric conversion device and X-ray imaging device |
JP7393471B2 (ja) | 2021-06-03 | 2023-12-06 | シャープ株式会社 | 光電変換装置およびx線撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
US8816413B2 (en) | 2014-08-26 |
TWI422022B (zh) | 2014-01-01 |
JP5367459B2 (ja) | 2013-12-11 |
US20100301444A1 (en) | 2010-12-02 |
TW201106480A (en) | 2011-02-16 |
CN101901820A (zh) | 2010-12-01 |
CN101901820B (zh) | 2012-11-14 |
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