JP2010171432A - ３次元集積回路積上げ用システム及び方法 - Google Patents

３次元集積回路積上げ用システム及び方法 Download PDF

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JP2010171432A
JP2010171432A JP2010014309A JP2010014309A JP2010171432A JP 2010171432 A JP2010171432 A JP 2010171432A JP 2010014309 A JP2010014309 A JP 2010014309A JP 2010014309 A JP2010014309 A JP 2010014309A JP 2010171432 A JP2010171432 A JP 2010171432A
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integrated circuit
funnel
shaped socket
socket
stacking
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JP5300753B2 (ja
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Kai-Ming Ching
▲かい▼明 卿
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

【課題】３次元集積回路スタッキング用システム及び方法を提供する。
【解決手段】複数の集積回路を積み上げ、位置合わせするシステムと方法を提供する。本方法は、少なくとも一つの漏斗状ソケットを有する第一集積回路を与えるステップと、第二集積回路を与え、前記第二集積回路上の少なくとも一つの突起を、少なくとも一つの漏斗状ソケットと位置合わせするステップと、第一集積回路と第二集積回路を結合するステップと、からなる。本システムは、少なくとも一つの漏斗状ソケットを有する第一集積回路と、漏斗状ソケットの内部に配置された金属化拡散バリアと、第二集積回路と、からなる。少なくとも一つの漏斗状ソケットは、第二集積回路の一部を収容するよう構成される。
【選択図】図２

Description

本発明は、集積回路に関するものであって、特に、集積回路を位置合わせし、積み上げる方法及びシステムに関するものである。
半導体製造では、２個以上の集積回路チップ又はウェハを精確に積み上げ(stack)、結合する(bond)ことがしばしば必要である。このような位置合わせ(alignment)と積上げ(stacking）は、チップ又はウェハに対する損傷を回避するため高精度で行われなければならない。図１で示されるように、このプロセスは、従来より“バンプトゥバンプ(bump to bump)”結合(bonding)を使用し、第一チップ、又は、ウェハ上の一連のバンプ又は突起は、第二チップ、又は、ウェハ上の対応する一連のバンプ又は突起と位置合わせされ、結合する。
図１にて理解できるように、この手法は、二つのチップ、又は、ウェハを、適切な機械的位置合わせを確実にする手段がなく、よって、高い精確度の結合ツールを必要とした。図１に示される場合では、高度の誤位置合わせ(misalignment)が説明のため示されている。少量の誤位置合わせであっても、得られる構造の電気的及びことによると機械的特性に悪影響を与えるおそれがある。
よって、チップ及びウェハの機械的位置合わせを提供し、損傷のリスクを減少させる集積回路を積み上げ、結合するシステムに対する必要性がある。
本発明は、複数の集積回路を積み上げ、位置合わせするシステムと方法を提供し、上述の問題を改善することを目的とする。
一つの態様において、本発明は、複数の集積回路を積み上げ、位置合わせする方法を備える。本方法は、少なくとも一つの漏斗状ソケットを有する第一集積回路を与えるステップと、第二集積回路を与え、前記第二集積回路上の少なくとも一つの突起を、少なくとも一つの漏斗状ソケットと位置合わせするステップと、第一集積回路と第二集積回路を結合するステップと、からなる。
別の態様において、本発明は、複数の集積回路を積み上げ、位置合わせするシステムを含む。本システムは、少なくとも一つの漏斗状ソケットを有する第一集積回路と、漏斗状ソケットの内部に配置された金属化拡散バリアと、第二集積回路と、からなる。少なくとも一つの漏斗状ソケットは、第二集積回路の一部を収容するよう構成する。
別の態様において、本発明は、位置合わせ、積み上げ装置を有するタイプの集積回路を製造する方法を含む。本方法は、複数のエッチング停止層を適用するステップと、エッチングされる領域の境界を誘電材料に定義するステップと、フォトレジスト層を誘電材料表面に与えるステップと、誘電材料中の漏斗状ソケットを所定の深さにエッチングするステップと、金属化拡散バリアを漏斗状ソケット内部に適用するステップと、からなる。
本発明によれば、チップやウェハの機械的位置合わせを提供し、損傷のリスクを減少することが出来る。
集積回路を積み上げ、位置合わせする従来技術の方法を例示する。 本発明の原理と一貫した集積回路を位置合わせ、積み上げするシステムの斜視図である。 二つの集積回路を積み上げ・結合した構成での配置を示す図２のシステムの側面図である。 本発明の原理と一貫した位置合わせソケットを有する集積回路の製造における各種の中間工程を例示する。 本発明の原理と一貫した位置合わせソケットを有する集積回路の製造における各種の中間工程を例示する。 本発明の原理と一貫した位置合わせソケットを有する集積回路の製造における各種の中間工程を例示する。 本発明の原理と一貫した位置合わせソケットを有する集積回路の製造における各種の中間工程を例示する。 本発明の実施例にかかる作業過程を例示する側面図である。 本発明の実施例にかかる作業過程を例示する側面図である。 本発明の実施例にかかる作業過程を例示する側面図である。 本発明のもう一つの実施例による作業過程を例示する側面図である。 本発明の実施例による強化金属ストリップアレイを有する照準ソケットを示す図である。 本発明のもう一つの実施例にかかる作業過程を例示する側面図である。
先ず図２を参照して、本発明の実施例が示される。図２のように、下チップ又はウェハ１２は、上面１６に配置された少なくとも一つのソケット１４を有する。ソケット１４はいかなる適する形状であってもよいが、一般的には全体に円形開口を有する。ソケット１４の内壁は、下チップ又はウェハ１２の本体内部に延伸して、ソケットに全体に漏斗状のジオメトリーを与える。この他、任意の数のソケット１４が、上面１６に配置される。一例として、図２では、１２個のこのようなソケットを例示する。ソケット１４は、下チップ又はウェハ１２の上面１６にわたり分布するよう示されているが、当業者なら、本発明は、より従来の配置にて具現することもでき、ソケット１４は、下チップ又はウェハ１２の周囲に沿って位置合わせされ、上面１６の中心領域だけに形成されるか、又は、他のバリエーションがあることは分かるであろう。
図２を続いて参照すると、上チップ又はウェハ１８は、下面２２上に配置された複数のバンプ又は突起２０を有する。下チップ又はウェハ１２と同じように、上チップ又はウェハ１８は、その上に配置される任意の数のバンプ、又は、突起２０を有することができる。しかしながら、上チップ又はウェハ１８の下面２２に配置されたバンプ、又は、突起の数は、好ましくは、下チップ又はウェハ１２の上面に配置されたソケット１４の数に対応する。これにより、上チップ又はウェハ１８は、例えば、１２個のバンプ、又は、突起２０をその上に配置するように一例として示している。
次に図３を参照すると、下チップ又はウェハ１２に積み上げ結合された上チップ又はウェハ１８を示す。下チップ又はウェハ１２の上面１６に配置されたソケット１４は、上チップ又はウェハ１８の下面２２に配置されたバンプ、又は、突起２０を収容する。ソケット１４の漏斗状のジオメトリーは、上チップ又はウェハ１８と下チップ又はウェハ１２の確かな位置合わせを考慮に入れ、積み上げ結合する手順について、上下チップ又はウェハ１２及び１８ならびに必要とされる精度の双方を損傷するリスクを低減し、それ故全体費用を減少させる。
次に図４Ａ〜図４Ｄは、例えば、図２と図３で示されるようなソケットを有する集積回路を製造する方法を示す図である。図４Ａで示されるように、下チップ又はウェハ１２は、通常、誘電材料４０から製造される。誘電材料４０は、例えば、SiN、SiO2、又は、SiCのようないかなる適当な材料であってもよい。誘電材料４０は、通常、数個の層４２からなる。数個の金属エッチング停止層４４は、誘電材料４０中に埋め込まれる。エッチング停止層４４は、複数の側壁トレンチ４６を含み、これらの側壁トレンチ４６ははんだの結合領域を増加する。
図４Ｂ、図４Ｃ、及び図４Ｄに示されるように、フォトレジスト層４８が、誘電材料４０の上面１６に形成される。フォトレジスト層４８は、誘電材料４０がエッチングプロセス中に損傷を受けるのを防止する。続いて、エッチング停止層４４間の誘電材料が、エッチングプロセスを経由して除去される。エッチングプロセスはいかなる適当な工程であってよいが、最も好ましくは、ドライエッチングかウェットエッチングのいずれかである。エッチングプロセス中、フォトレジスト層４８は、誘電材料４０の不要なエッチングを防止する。エッチング停止層４４は、エッチングプロセスに対し耐性があり、よって、ソケット１４は、必要な漏斗状構造（ジオメトリー）に形成できる。エッチングプロセスが終了すれば、フォトレジスト層４８は除去することができる。
図５Ａ〜図５Ｃは、本発明の実施例による二個の集積回路を積み上げ、位置合わせする方法を示す。金属化拡散バリア５０は、ソケット１４内部に適用される。金属化拡散バリア５０は、通常、２ミクロンより大きい厚さがあり、拡散バリア層（例えば、ニッケル）、及び、はんだ濡れ層（例えば、金）で構成される。金属化拡散バリア５０は、２つの目的にかなう。第１に、金属化拡散バリア５０は、ソケット１４の底部層５２を強化することができる。第２に、金属化拡散バリア５０は、より良い機械的結合位置合わせのため、ソケット側壁５４を滑らかにすることができる。
図５Ｂと図５Ｃに示されるように、ソケット１４は、上チップ又はウェハ１８の下面２２に配置されるバンプ、又は、突起２０を収容するよう構成される。一例として、図５Ｂで示されるバンプ、又は、突起２０ははんだバンプとして例示される。ソケット１４の滑らかな側壁５４は、上チップ又はウェハ１８が、下チップ又はウェハ１２に適切に配置、位置合わせするのに役立つ。適切にソケット１４中に据え付けられたなら、バンプは側壁５４と結合し、これにより、上下チップ又はウェハ１２及び１８を結合する。
次に図６を参照すると、本発明の実施例が示され、バンプ、又は、突起２０は、上チップ又はウェハ１８の下面２２から突出する銅バンプ、又は、スルーシリコンビア（TSV）銅釘として例示されている。図６に示されるように、金属化拡散バリア５０は又、ソケット１４の側壁５４に対する適用の代わり、又は、それに加えて、バンプ、又は、突起２０に直接適用することができる。
次に図７を参照すると、本発明の実施例が示され、金属ストリップ７０のアレイは、ソケット１４を取り囲む誘電材料４０中に埋め込まれる。金属ストリップアレイは、誘電材料４０を強化し、結合に対する強固な構造を形成するのに役立つ。
次に図８を参照すると、本発明の実施例が示され、上チップ又はウェハ１８は、下チップ又はウェハ１２に配置されるソケット１４に対応するソケット８０を備える。作業過程中に、ソルダー球８２は、ソケット１４、及び、８０内で、上下チップ又はウェハ１２及び１８間に配置される。ソケット１４と８０の傾斜した側壁は、上下チップ又はウェハ１２及び１８、の結合時の位置合わせを援助する。
本発明では好ましい実施例を前述の通り開示したが、これらは決して本発明に限定するものではなく、当該技術を熟知する者なら誰でも、本発明の精神と領域を脱しない範囲内で各種の変動や潤色を加えることができ、従って本発明の保護範囲は、特許請求の範囲で指定した内容を基準とする。
１２ 下チップ又はウェハ
１４ ソケット
１６ 上面
１８ 上チップ又はウェハ
２０ バンプ、又は、突起
２２ 下面
４０ 誘電材料
４２ 膜層
４４ 金属エッチング停止層
４６ 側壁トレンチ
４８ フォトレジスト層
５０ 金属化拡散バリア
５２ 底部層
５４ ソケットの側壁
７０ 金属ストリップ
８０ ソケット
８２ ソルダー球

Claims (14)

  1. 複数の金属層からなり、少なくとも一つの漏斗状ソケットを有する第一集積回路を与えるステップと、
    第二集積回路を与えるステップと、
    少なくとも一つの突起を、前記の少なくとも一つの漏斗状ソケットと位置合わせするステップと、
    前記第一集積回路と前記第二集積回路を結合するステップと、
    を備える複数の集積回路を積み上げ、位置合わせする方法。
  2. 前記漏斗状ソケットの内壁は、前記第一集積回路の上面により定義される平面から約４５度の角度で配置されることを特徴とする請求項１に記載の方法。
  3. 前記漏斗状ソケットは、前記第一集積回路の上面から、前記の複数の金属層の中間金属層に延伸することを特徴とする請求項１に記載の方法。
  4. 前記中間金属層は、前記の複数の金属層の最下層の金属層であることを特徴とする請求項３に記載の方法。
  5. 前記第二集積回路は、第二漏斗状ソケットを含むことを特徴とする請求項１に記載の方法。
  6. 少なくとも一つの漏斗状ソケットを有する第一集積回路と、
    前記漏斗状ソケットの内部に配置された金属化拡散バリアと、
    第二集積回路と、からなる複数の集積回路を積み上げ、位置合わせするシステムにおいて、
    前記の少なくとも一つの漏斗状ソケットは、前記第二集積回路の一部を収容するよう構成されることを特徴とするシステム。
  7. 前記漏斗状ソケットの内壁は、前記第一集積回路の上面により定義される平面から約４５度の角度で配置されることを特徴とする請求項６に記載のシステム。
  8. 前記漏斗状ソケットは、前記第一集積回路の上面から、前記の複数の金属層の中間金属層に延伸することを特徴とする請求項６に記載のシステム。
  9. 前記中間金属層は、前記の複数の金属層の最下層の金属層であることを特徴とする請求項８に記載のシステム。
  10. 前記第二集積回路は、少なくとも一つの突起を有することを特徴とする請求項６に記載のシステム。
  11. 更に、前記漏斗状ソケットを取り囲む領域内の前記第一集積回路中に配置された金属アレイを有し、前記金属アレイが作用して、前記漏斗状ソケットを取り囲む領域内の前記第一集積回路を強化することを特徴とする請求項６に記載のシステム。
  12. 位置合わせ及び積み重ね装置を有するタイプの集積回路を製造する方法であって、
    複数のエッチング停止層を誘電材料に適用するステップであって、前記誘電材料は、複数の金属層を含み、前記エッチング停止層は、エッチングされる領域の境界を定義するステップと、
    フォトレジスト層を前記誘電材料表面に適用するステップと、
    前記誘電材料中の漏斗状ソケットを所定の深さにエッチングするステップと、
    金属化拡散バリアを前記漏斗状ソケット内部に適用するステップと、
    からなることを特徴とする方法。
  13. 前記漏斗状ソケットは、前記第一集積回路の上面から、前記の複数の金属層の中間金属層に延伸することを特徴とする請求項１２に記載の方法。
  14. 前記中間金属層は、前記の複数の金属層の最下層の金属層であることを特徴とする請求項１３に記載の方法。
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