JP2010135845A - 非極性(Al,B,In,Ga)N量子井戸、ならびにヘテロ構造材料およびデバイス - Google Patents
非極性(Al,B,In,Ga)N量子井戸、ならびにヘテロ構造材料およびデバイス Download PDFInfo
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Abstract
【解決手段】1つ以上の非極性(1120)a平面GaN層が、金属・有機化学気相成長MOCVDを使用して、r平面(1102)サファイア基板上で成長される。これらの非極性(1120)a平面GaN層は、非極性(Al,B,In,Ga)N量子井戸、ならびにヘテロ構造材料およびデバイスを製造するためのテンプレートを備える。
【選択図】図1
Description
本願は、米国特許法第119条第(e)項のもとで、以下の同時係属中の、同一人に譲渡された米国仮特許出願番号60/372,909(発明の名称「NON−POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS」、2002年4月15日出願、Michael D.Craven,Stacia Keller,Steven P.DenBaars,Tal Margalith,James S.Speck,Shuji Nakamura,およびUmesh K.Mishra、代理人文書番号30794.95−US−P1)の利益を主張する。この出願は、本明細書中に参考として援用される。
出願番号−−/−−−,−−−、発明の名称「NON−POLAR A−PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION」、本願と同日に出願、Michael D.CravenおよびJames S.Speck、代理人文書番号30794.100−US−P1);ならびに
出願番号−−/−−−,−−−、発明の名称「DISLOCATION REDUCTION IN NON−POLAR GALLIUM NITRIDE THIN FILMS」、本願と同日に出願、Michael D.Craven,Stacia Keller,Steven P.DenBaars,Tal Margalith,James S.Speck、Shuji Nakamura,およびUmesh K.Mishra代理人文書番号30794.102−US−P1);
これらの出願の両方が、本明細書中に参考として援用される。
本発明は、半導体材料、方法、およびデバイスに関し、そしてより具体的には、非極性(Al,B,In,Ga)N量子井戸、ならびにヘテロ構造材料およびデバイスに関する。
(注:本願は、多数の異なる特許、腫癌および/または刊行物を、1つ以上の参照番号によって、本明細書全体に示されるように参照する。これらの異なる刊行物の、これらの参照番号に従った順序にしたリストは、以下の「参考文献」の表題の節に見出され得る。これらの刊行物の各々は、本明細書中に参考として援用される)。
本発明は、非極性(Al,B,In,Ga)N量子井戸、ならびにヘテロ構造材料およびデバイスを形成するための方法を記載する。第一に、非極性の
例えば、本発明は以下を提供する。
(項目1)
窒化物半導体デバイスを形成するための方法であって、以下:
(a)1つ以上の非極性a平面GaN層を、r平面基板上で成長させる工程;および
(b)1つ以上の非極性(Al,B,In,Ga)N層を、該非極性a平面GaN層上で成長させる工程、
を包含する、方法。
(項目2)
前記基板が、サファイア基板である、項目1に記載の方法。
(項目3)
前記基板が、炭化ケイ素、窒化ガリウム、ケイ素、酸化亜鉛、窒化ホウ素、アルミン酸リチウム、ニオブ酸リチウム、ゲルマニウム、窒化アルミニウム、および没食子酸リチウムからなる群より選択される、項目1に記載の方法。
(項目4)
前記成長した非極性(Al,B,In,Ga)N層が、少なくとも1つの量子井戸を含む、項目1に記載の方法。
(項目5)
前記量子井戸が、InGaN量子井戸を含む、項目4に記載の方法。
(項目6)
前記量子井戸が、GaNでキャップされている、項目4に記載の方法。
(項目7)
前記成長した非極性(Al,B,In,Ga)N層が、少なくとも1つのヘテロ構造を含む、項目1に記載の方法。
(項目8)
前記ヘテロ構造が、(Al,Ga)N/GaN超格子を含む、項目7に記載の方法。
(項目9)
前記成長させる工程(a)が、以下:
(1)前記基板をアニールする工程;
(2)窒化物ベースの核生成層を、該基板上に堆積させる工程;
(3)非極性のa平面窒化ガリウムフィルムを、該核生成層上で成長させる工程;および
(4)該非極性のa平面窒化ガリウムフィルムを、窒素の過剰圧力下で冷却する工程、を包含する、項目1に記載の方法。
(項目10)
前記成長させる工程が、金属・有機化学気相成長(MOCVD)、分子線エピタキシー(MBE)、液相エピタキシー(LPE)、水素化物蒸気相エピタキシー(HVPE)、昇華、およびプラズマ増強化学蒸着(PECVD)からなる群より選択される方法によって実施される、項目1に記載の方法。
(項目11)
項目1に記載の方法を使用して製造されたデバイス。
本発明の目的は、非極性
図1は、本発明の好ましい実施形態に従って、非極性(Al,B,In,Ga)N量子井戸ならびにヘテロ構造材料およびデバイスを形成するための方法の工程を示すフローチャートである。この方法の工程は、「テンプレート」
8nmのSiドープしたIn0.03GaN障壁
1.5nm、2.5nmまたは5nmのIn0.1GaN井戸
が挙げられるが、これらに限定されない。
9nmのAl0.4GaN障壁
11nmのGaN井戸
が挙げられるが、これらに限定されない。
以下の参考文献が、本明細書中に参考として援用される:
Claims (17)
- 窒化物半導体デバイスを形成するための方法であって、
(a)基板をアニールする工程と、
(b)窒化物ベースの核生成層を該基板上に堆積させる工程と、
(c)1つ以上の非極性窒化ガリウム(GaN)層を該核生成層上で成長させる工程と、
(d)該非極性GaN層を窒素の過剰圧力下で冷却する工程と、
(e)1つ以上の非極性(Al,B,In,Ga)N層を該非極性GaN層上で成長させる工程と
を含む、方法。 - 前記基板が、r平面サファイア基板である、請求項1に記載の方法。
- 前記基板が、炭化ケイ素、窒化ガリウム、ケイ素、酸化亜鉛、窒化ホウ素、アルミン酸リチウム、ニオブ酸リチウム、ゲルマニウム、窒化アルミニウム、および没食子酸リチウムからなる群より選択される、請求項1に記載の方法。
- 前記非極性(Al,B,In,Ga)N層が、少なくとも1つの量子井戸層を含む、請求項1に記載の方法。
- 前記量子井戸層が、InGaN量子井戸を含む、請求項4に記載の方法。
- 前記量子井戸層が、GaN層でキャップされている、請求項4に記載の方法。
- 前記非極性(Al,B,In,Ga)N層が、少なくとも1つのヘテロ構造を含む、請求項1に記載の方法。
- 前記ヘテロ構造が、(Al,Ga)N/GaN超格子を含む、請求項7に記載の方法。
- 前記成長させる工程が、金属・有機化学気相成長(MOCVD)、分子線エピタキシー(MBE)、液相エピタキシー(LPE)、水素化物蒸気相エピタキシー(HVPE)、昇華、およびプラズマ増強化学蒸着(PECVD)からなる群より選択される方法によって実施される、請求項1に記載の方法。
- 窒化物半導体デバイスであって、
(b)基板上で成長させられた1つ以上の非極性GaN層と、
(c)該非極性GaN層上で成長させられた1つ以上の非極性(Al,B,In,Ga)N層であって、該非極性(Al,B,In,Ga)N層は、
(1)2.6×10 10 cm −2 を超えない貫通転位密度、または
(2)3.8×10 5 cm −1 を超えない積層欠陥密度、または
(3)2.6×10 10 cm −2 を超えない貫通転位密度および3.8×10 5 cm −1 を超えない積層欠陥密度
を有する、デバイス。 - 前記基板上に成長させられた窒化物ベースの核生成層をさらに含み、前記非極性GaN層は、該基板上に成長させられた該窒化物ベースの核生成層上に成長させられる、請求項10に記載のデバイス。
- 前記基板が、r平面サファイア基板である、請求項10に記載のデバイス。
- 前記非極性(Al,B,In,Ga)N層が、少なくとも1つの量子井戸層を含む、請求項10に記載のデバイス。
- 前記量子井戸層が、InGaN量子井戸を含む、請求項13に記載のデバイス。
- 前記量子井戸層が、GaN層でキャップされている、請求項13に記載のデバイス。
- 前記非極性(Al,B,In,Ga)N層が、少なくとも1つのヘテロ構造を含む、請求項10に記載のデバイス。
- 前記ヘテロ構造が、(Al,Ga)N/GaN超格子を含む、請求項16に記載のデバイス。
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