JP2010135738A - Wiring board, active element housing package using the same, and active element apparatus - Google Patents

Wiring board, active element housing package using the same, and active element apparatus Download PDF

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JP2010135738A
JP2010135738A JP2009171758A JP2009171758A JP2010135738A JP 2010135738 A JP2010135738 A JP 2010135738A JP 2009171758 A JP2009171758 A JP 2009171758A JP 2009171758 A JP2009171758 A JP 2009171758A JP 2010135738 A JP2010135738 A JP 2010135738A
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wiring conductor
resistor
wiring
active element
conductor
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JP5171751B2 (en
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Takayuki Shirasaki
隆行 白崎
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that, on a wiring board with a terminal resistor, signals cannot be sometimes favorably terminated when a mounted capacitor is large. <P>SOLUTION: A wiring board 1 includes: a first wiring conductor 9 that is disposed on a main face of a dielectric substrate 3 with one end connected with a ground conductor 17 via a terminal resistor 19 and the other end electrically connected with an active element; a capacitor 5 connected in parallel between the other end of the first wiring conductor 9 and the terminal resistor 19; a first resistor 11 connected in series between the other end of the first wiring conductor 9 and the capacitor 5; a second wiring conductor 13 with one end electrically connected with the first wiring conductor 9 and the other end electrically connected with a DC power supply; and a second resistor 15 connected between the first wiring conductor 9 and the second wiring conductor 13 or connected in series in the middle of the second wiring conductor 13. High frequency signals can be well terminated by absorbing signal reflections by the capacitor 5 in the first resistor 15. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、配線基板ならびにこれを用いた能動素子収納用パッケージおよび能動素子装置に関するものである。能動素子装置は、例えば、光通信および無線通信の高周波通信の分野で好適に用いることができる。   The present invention relates to a wiring board, an active element storage package using the same, and an active element device. The active element device can be suitably used, for example, in the field of high-frequency communication such as optical communication and wireless communication.

従来から、能動素子装置には、終端抵抗基板として、一端が能動素子に電気的に接続され、他端が終端抵抗を介して接地される、高周波信号を伝送する線路導体と、線路導体の途中に一方の端部が接続されるとともに他方の端部が直流電源に接続されたバイアス線路と、このバイアス線路の途中に配置された抵抗体（バイアス抵抗）とを備えた配線基板が用いられている（例えば、特許文献１を参照。）。この配線基板によれば、バイアス線路に抵抗体を備えることで、バイアス線路への高周波信号の流れ込みを抑制することができ、バイアス線路からの高周波信号の反射によるノイズによって、能動素子が誤作動するのを防ぐことができる。   2. Description of the Related Art Conventionally, an active element device includes a line conductor for transmitting a high-frequency signal, one end of which is electrically connected to the active element and the other end is grounded via a termination resistor as a termination resistor substrate, and a middle of the line conductor. And a wiring board having a bias line having one end connected to the DC power source and the other end connected to a DC power source, and a resistor (bias resistor) disposed in the middle of the bias line. (For example, refer to Patent Document 1). According to this wiring board, by providing a resistor in the bias line, the flow of a high-frequency signal into the bias line can be suppressed, and the active element malfunctions due to noise due to reflection of the high-frequency signal from the bias line. Can be prevented.

また、この従来の配線基板では、終端抵抗とバイアス線路の接続部との間にコンデンサを挿入して、バイアス線路から供給される直流電流が終端抵抗へ流れないようにすることも行なわれている。   In this conventional wiring board, a capacitor is inserted between the termination resistor and the connection portion of the bias line so that the direct current supplied from the bias line does not flow to the termination resistor. .

特開2006−13351号公報JP 2006-13351

しかしながら、近年、伝達する情報量の増加に伴い、より高速な信号処理に対応可能な配線基板が求められている。高速信号に含まれる低周波成分を通すためには高容量のコンデンサが求められ、また、ＬＮ変調器に用いられる配線基板においては、駆動電圧が高いことから高耐電圧のコンデンサを搭載する場合が多く、いずれの場合でも大型のコンデンサを搭載することが求められるようになっている。   However, in recent years, with the increase in the amount of information to be transmitted, there is a demand for a wiring board that can handle higher-speed signal processing. A high-capacitance capacitor is required to pass low-frequency components included in high-speed signals, and a high withstand voltage capacitor may be mounted on a wiring board used in an LN modulator because the drive voltage is high. In many cases, it is required to mount a large capacitor in any case.

従来の配線基板において、バイアス線路から終端抵抗へ流れる直流成分を遮断するための大型のコンデンサが搭載される場合は、コンデンサの幅が線路導体の幅より大きくなることから、コンデンサの部分で線路導体の幅が大きくなることによって高周波信号の反射が発生してしまうので、また、高周波領域におけるコンデンサ自体の周波数特性による高周波信号の反射が発生するので、反射によるノイズによって信号線路による高周波信号の伝送特性が低下してしまい、信号線路の端部に接続された終端抵抗による信号の終端ができなくなってしまう場合があるという問題点があった。   In a conventional wiring board, when a large capacitor is installed to cut off the DC component flowing from the bias line to the termination resistor, the width of the capacitor is larger than the width of the line conductor. Since the reflection of high frequency signals occurs due to the frequency characteristics of the capacitor itself in the high frequency region, the transmission characteristics of the high frequency signals by the signal lines are caused by noise due to reflection. This causes a problem that the signal may not be terminated by the termination resistor connected to the end of the signal line.

本発明は、上記課題に鑑みてなされたものであり、終端抵抗を備えた配線基板において、搭載するコンデンサを大型化しても、高周波信号の反射によるノイズ量がより低減され、終端抵抗による良好な終端が可能な配線基板ならびにこれを用いた能動素子収納用パッケージおよび能動素子装置を提供することを目的とする。   The present invention has been made in view of the above problems. In a wiring board having a termination resistor, even if the mounted capacitor is enlarged, the amount of noise due to reflection of high-frequency signals is further reduced, and the termination resistor is excellent. It is an object of the present invention to provide a wiring board capable of termination, an active element storage package and an active element device using the wiring board.

本発明の配線基板は、誘電体基板と、該誘電体基板の主面上に配置され、一方の端部が終端抵抗を介して接地導体に接続されて、他方の端部が能動素子に電気的に接続される第１の配線導体と、該第１の配線導体の前記他方の端部と前記終端抵抗との間の途中に直列に接続されたコンデンサと、前記第１の配線導体の前記他方の端部と前記コンデンサとの間の途中に直列に接続された第１の抵抗体と、一方の端部が前記第１の配線導体の前記他方の端部と前記コンデンサとの間において前記第１の配線導体と電気的に接続され、他方の端部が直流電源と電気的に接続される第２の配線導体と、前記第１の配線導体と前記第２の配線導体との間または前記第２の配線導体の前記一方の端部と前記他方の端部との間の途中に直列に接続された第２の抵抗体とを備えることを特徴とするものである。   The wiring board of the present invention is disposed on the dielectric substrate and the main surface of the dielectric substrate, one end is connected to the ground conductor via the termination resistor, and the other end is electrically connected to the active element. First wiring conductor connected in series, a capacitor connected in series between the other end of the first wiring conductor and the termination resistor, and the first wiring conductor A first resistor connected in series between the other end portion and the capacitor; and one end portion between the other end portion of the first wiring conductor and the capacitor. A second wiring conductor electrically connected to the first wiring conductor and having the other end electrically connected to a DC power source; and between the first wiring conductor and the second wiring conductor, or A second connected in series between the one end and the other end of the second wiring conductor; It is characterized in further comprising a resistor.

また、本発明の配線基板は、上記構成において、前記第１の配線導体は、前記他方の端部から前記第１の抵抗体との第１の接続部にかけて幅が大きくなっており、該第１の接続部から前記コンデンサとの第２の接続部にかけて幅がさらに大きくなっており、前記他方の端部と前記第２の接続部との間における、前記他方の端部より幅が大きく前記第２の接続部より幅が小さい部分の長さは、前記第１の配線導体を伝送する高周波信号の波長の４分の１以下であることを特徴とするものである。   In the wiring board of the present invention, in the above configuration, the first wiring conductor has a width that increases from the other end portion to the first connection portion with the first resistor. The width is further increased from one connection portion to the second connection portion with the capacitor, and the width is larger than the other end portion between the other end portion and the second connection portion. The length of the portion having a width smaller than that of the second connection portion is not more than one-quarter of the wavelength of the high-frequency signal transmitted through the first wiring conductor.

また、本発明の配線基板は、上記各構成において、前記第１の抵抗体が、前記第１の配線導体における前記第２の配線導体の接続部分と前記他方の端部との間に配置されていることを特徴とするものである。   In the wiring board of the present invention, the first resistor is disposed between the connection portion of the second wiring conductor and the other end of the first wiring conductor in each of the above-described configurations. It is characterized by that.

また、本発明の配線基板は、上記各構成において、前記第１の抵抗体が、前記第１の配線導体における前記第２の配線導体の接続部分と前記コンデンサとの間に配置されていることを特徴とするものである。   In the wiring board of the present invention, the first resistor is disposed between the connection portion of the second wiring conductor in the first wiring conductor and the capacitor in each configuration described above. It is characterized by.

また、本発明の能動素子収納用パッケージは、主面上に能動素子を搭載する搭載部を有する基体と、該基体の主面上に前記搭載部に近接して配設された請求項１乃至請求項４のいずれかに記載の配線基板および回路基板と、前記基体の主面上に、前記搭載部、前記配線基板および前記回路基板を囲うように配設された枠体とを備えていることを特徴とするものである。   The active element storage package according to the present invention is provided with a base having a mounting portion for mounting an active element on a main surface, and disposed close to the mounting portion on the main surface of the base. 5. The wiring board and the circuit board according to claim 4, and a frame body disposed on the main surface of the base body so as to surround the mounting portion, the wiring board, and the circuit board. It is characterized by this.

また、本発明の能動素子装置は、上記構成の本発明の能動素子収納用パッケージと、前記基体の前記搭載部に搭載され、前記回路基板および前記配線基板に電気的に接続された能動素子と、前記枠体に接合され、前記回路基板、前記配線基板および前記能動素子を封止する蓋体とを備えていることを特徴とするものである。   An active element device according to the present invention includes an active element storage package according to the present invention configured as described above, an active element mounted on the mounting portion of the base, and electrically connected to the circuit board and the wiring board. And a lid that is bonded to the frame and seals the circuit board, the wiring board, and the active element.

本発明の配線基板によれば、コンデンサと第１の配線導体の他方の端部との間の途中に直列に接続された第１の抵抗体を備えていることから、コンデンサ自体の周波数特性による高周波信号の反射を吸収することができ、反射によって第１の配線導体に入射するノイズ量を低減することができるので、第１の配線導体によって高周波信号を良好に伝送して、第１の配線導体の端部に接続された終端抵抗によって高周波信号を終端させることができる配線基板となる。   According to the wiring board of the present invention, since the first resistor connected in series is provided in the middle between the capacitor and the other end of the first wiring conductor, it depends on the frequency characteristics of the capacitor itself. Since the reflection of the high-frequency signal can be absorbed and the amount of noise incident on the first wiring conductor can be reduced by the reflection, the high-frequency signal is satisfactorily transmitted by the first wiring conductor, and the first wiring The wiring board can terminate the high-frequency signal by a terminating resistor connected to the end of the conductor.

また、本発明の配線基板によれば、上記構成において、第１の配線導体は、他方の端部から第１の抵抗体との第１の接続部にかけて幅が大きくなっており、第１の接続部からコンデンサとの第２の接続部にかけて幅がさらに大きくなっており、他方の端部と第２の接続部との間における、他方の端部より幅が大きく第２の接続部より幅が小さい部分の長さは、第１の配線導体を伝送する高周波信号の波長の４分の１以下であるときには、能動素子のインピーダンスとマッチングするように微細な幅で形成された第１の配線導体の他方の端部に対して、大型のコンデンサを搭載するために第２の接続部の幅を大きくした場合であっても、それらの間の部分の幅をそれらの幅の中間の幅としているので、第１の配線導体におけるインピーダンスのミスマッチが低減されるとともに、この部分の長さが第１の配線導体を伝送する高周波信号の波長の４分の１以下であることから、この部分における信号の反射が抑えられ、ノイズ量がより低減された配線基板となる。   According to the wiring board of the present invention, in the above configuration, the first wiring conductor has a width that increases from the other end portion to the first connecting portion with the first resistor. The width is further increased from the connection portion to the second connection portion with the capacitor, and the width between the other end portion and the second connection portion is larger than the other end portion and wider than the second connection portion. The first wiring formed with a fine width so as to match the impedance of the active element when the length of the small portion is equal to or less than a quarter of the wavelength of the high-frequency signal transmitted through the first wiring conductor Even when the width of the second connection portion is increased in order to mount a large capacitor with respect to the other end portion of the conductor, the width of the portion between them is set as the intermediate width of those widths. Because of the impedance of the first wiring conductor Since the length of the portion is less than a quarter of the wavelength of the high-frequency signal transmitted through the first wiring conductor, the reflection of the signal in this portion is suppressed and the amount of noise is further reduced. The wiring board is reduced.

また、本発明の配線基板によれば、上記構成において、第１の抵抗体が、第１の配線導体における第２の配線導体の接続部分と他方の端部との間に配置されているときには、第１の配線導体と第２の配線導体との接続部分および第２の配線導体の第１の配線導体との接続部分から第２の抵抗体までの間の部分での反射によって、第１の配線導体の他方の端部（に接続される能動素子）に向かって流れ込んだ高周波信号（反射信号）の一部を、第１の抵抗体によって吸収することができ、ノイズ量をより低減することができる。   According to the wiring board of the present invention, in the above configuration, when the first resistor is disposed between the connection portion of the second wiring conductor and the other end of the first wiring conductor. The first wiring conductor and the second wiring conductor and the reflection of the second wiring conductor from the first wiring conductor to the second resistor to reflect the first resistance. A part of the high-frequency signal (reflected signal) flowing toward the other end of the wiring conductor (the active element connected thereto) can be absorbed by the first resistor, and the amount of noise is further reduced. be able to.

また、本発明の配線基板によれば、上記構成において、第１の抵抗体が、第１の配線導体における第２の配線導体の接続部分とコンデンサとの接続部との間に配置されているときには、直流電源が接続される第２の配線導体の他方の端部と能動素子が接続される第１の配線導体の他方の端部との間には、第１の抵抗体は存在せずに第２の抵抗体のみが存在することから、この間の抵抗値が小さいものとなるので第２の配線導体によって能動素子に供給する直流バイアス電流を低電圧にすることができる。   According to the wiring board of the present invention, in the above configuration, the first resistor is arranged between the connection portion of the second wiring conductor and the connection portion of the capacitor in the first wiring conductor. Sometimes, the first resistor does not exist between the other end of the second wiring conductor to which the DC power source is connected and the other end of the first wiring conductor to which the active element is connected. Since only the second resistor is present, the resistance value during this period is small, so that the DC bias current supplied to the active element by the second wiring conductor can be lowered.

本発明の能動素子収納用パッケージによれば、主面上に能動素子を搭載する搭載部を有する基体と、基体の主面上に搭載部に近接して配設された上記構成の本発明の配線基板および回路基板と、基体の主面上に、搭載部、配線基板および回路基板を囲うように配設された枠体とを備えていることから、良好な終端特性を有する能動素子収納用パッケージを提供することができる。   According to the active element storage package of the present invention, the base of the present invention having the above-described configuration disposed on the main surface of the base in the vicinity of the mounting portion is provided on the main surface. Since it includes a wiring board and a circuit board, and a frame disposed on the main surface of the base body so as to surround the wiring board and the circuit board, it is for housing active elements having good termination characteristics. Package can be provided.

本発明の能動素子装置によれば、上記構成の本発明の能動素子収納用パッケージと、基体の搭載部に搭載され、回路基板および配線基板に電気的に接続された能動素子と、枠体に接合され、回路基板、配線基板および能動素子を封止する蓋体とを備えていることから、内部に載置された能動素子の封止性に優れ、また、良好な終端特性によって能動素子が安定して動作する、信頼性の高い能動素子装置を提供することができる。   According to the active element device of the present invention, the active element storage package of the present invention having the above configuration, the active element mounted on the mounting portion of the base body and electrically connected to the circuit board and the wiring board, and the frame body It is bonded and has a circuit board, a wiring board, and a lid for sealing the active element, so that the active element placed inside is excellent in sealing performance, and the active element has a good termination characteristic. A highly reliable active element device that operates stably can be provided.

（ａ）は本発明の配線基板の実施の形態の一例（第１の実施形態）を示す平面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is a top view which shows an example (1st Embodiment) of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a). 図１に示す配線基板の等価回路図である。FIG. 2 is an equivalent circuit diagram of the wiring board shown in FIG. 1. （ａ）は本発明の配線基板の実施の形態の他の例（第２の実施形態）を示す平面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is a top view which shows the other example (2nd Embodiment) of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a). 図３に示す配線基板の等価回路図である。FIG. 4 is an equivalent circuit diagram of the wiring board shown in FIG. 3. （ａ）は本発明の配線基板の実施の形態のさらに他の例（第３の実施形態）を示す平面図であり、（ｂ）は（ａ）のＡ部を拡大して示す平面図である。(A) is a top view which shows further another example (3rd Embodiment) of embodiment of the wiring board of this invention, (b) is a top view which expands and shows the A section of (a). is there. （ａ）は本発明の配線基板の実施の形態のさらに他の例（第４の実施形態）を示す平面図であり、（ｂ）は（ａ）のＡ部を拡大して示す平面図である。(A) is a top view which shows further another example (4th Embodiment) of embodiment of the wiring board of this invention, (b) is a top view which expands and shows the A section of (a). is there. 本発明の能動素子収納用パッケージおよび能動素子装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the active element storage package and active element apparatus of this invention.

以下、本発明の配線基板について図面を用いて詳細に説明する。図１〜図７において、１は配線基板、３は誘電体基板、３ａは主面、５はコンデンサ、７は能動素子、９は第１の配線導体、11は第１の抵抗体、13は第２の配線導体、15は第２の抵抗体、17は接地導体、19は終端抵抗、21は能動素子収納用パッケージ、23は基体、25は回路基板、27は枠体、29は能動素子装置、31は蓋体、33はボンディングワイヤ、35は取出電極である。なお、図１（ａ），図３（ａ），図５および図６は平面図であるが、これらの図においては、コンデンサ５，第１の配線導体９，第１の抵抗体11，第２の配線導体13，第２の抵抗体15，接地導体17および終端抵抗19が認識しやすいようにハッチングを施してある。   Hereinafter, the wiring board of the present invention will be described in detail with reference to the drawings. 1 to 7, 1 is a wiring board, 3 is a dielectric substrate, 3a is a main surface, 5 is a capacitor, 7 is an active element, 9 is a first wiring conductor, 11 is a first resistor, and 13 is Second wiring conductor, 15 is a second resistor, 17 is a ground conductor, 19 is a terminating resistor, 21 is a package for housing active elements, 23 is a base, 25 is a circuit board, 27 is a frame, 29 is an active element A device, 31 is a lid, 33 is a bonding wire, and 35 is an extraction electrode. 1A, FIG. 3A, FIG. 5 and FIG. 6 are plan views. In these figures, the capacitor 5, the first wiring conductor 9, the first resistor 11, the first resistor The second wiring conductor 13, the second resistor 15, the ground conductor 17, and the terminating resistor 19 are hatched so that they can be easily recognized.

図１〜図６に示す例のように、本発明の配線基板１は、誘電体基板３と、誘電体基板３の主面３ａ上に配置され、一方の端部が終端抵抗19を介して接地導体に接続され、他方の端部が能動素子７に電気的に接続される第１の配線導体９と、第１の配線導体９の他方の端部と終端抵抗19との間に直列に接続されたコンデンサ５と、コンデンサ５と第１の配線導体９の他方の端部との間に直列に接続された第１の抵抗体11と、一方の端部が第１の配線導体９と電気的に接続されており、他方の端部が直流電源と電気的に接続される、長さ方向の一部が第２の抵抗体15である第２の配線導体13とを備えている配線基板１である。そして、コンデンサ５と第１の配線導体９の他方の端部との間に直列に接続された第１の抵抗体11を備えていることを特徴とするものである。   As shown in the examples shown in FIGS. 1 to 6, the wiring board 1 of the present invention is disposed on the dielectric substrate 3 and the main surface 3 a of the dielectric substrate 3, and one end thereof is connected to the termination resistor 19. A first wiring conductor 9 connected to the ground conductor and having the other end electrically connected to the active element 7, and the other end of the first wiring conductor 9 and the termination resistor 19 are connected in series. The connected capacitor 5, the first resistor 11 connected in series between the capacitor 5 and the other end of the first wiring conductor 9, and the first wiring conductor 9 having one end connected to the first wiring conductor 9. A wiring having a second wiring conductor 13 which is electrically connected and whose other end is electrically connected to a DC power source and whose lengthwise part is a second resistor 15 This is the substrate 1. A first resistor 11 connected in series is provided between the capacitor 5 and the other end of the first wiring conductor 9.

図１に示す例では、第１の配線導体９の一方の端部は終端抵抗19の一端部に接続され、終端抵抗19の他端部は誘電体基板３の側面に配置された接地導体17に接続されている。この接地導体17は、配線基板１を能動素子収納用パッケージ21に搭載した際に、能動素子収納用パッケージ21の接地電位の部分に接続される。   In the example shown in FIG. 1, one end of the first wiring conductor 9 is connected to one end of the termination resistor 19, and the other end of the termination resistor 19 is grounded conductor 17 disposed on the side surface of the dielectric substrate 3. It is connected to the. The ground conductor 17 is connected to the ground potential portion of the active element storage package 21 when the wiring board 1 is mounted on the active element storage package 21.

本発明の配線基板１における第１の配線導体９は、その一方の端部が終端抵抗19を介して接地導体に接続されることで、他方の端部に電気的に接続される能動素子７を終端させるためのものである。第２の配線導体13は、第１の配線導体９および能動素子７に伝送する高周波信号にバイアス電圧をかけるためのものである。この第２の配線導体13と第１の配線導体９との間または第２の配線導体13の一方の端部と他方の端部との間の途中に直列に接続された第２の抵抗体15があることで、第１の配線導体９を伝送する高周波信号がバイアス線路である第２の配線導体13に流れ込むのを抑制しつつ、能動素子７にかかるバイアス電圧をコントロールすることができる。また、第１の配線導体９の他方の端部と終端抵抗19との間にコンデンサ５が直列に接続されていることでバイアス線路である第２の配線導体13から供給される直流電流が終端抵抗19へ流れないようにすることができる。このとき、交流である高周波信号は、コンデンサ５を通過して終端抵抗19まで流れるので、第１の配線導体９の他方の端部に電気的に接続される能動素子７は終端抵抗19により終端される。そして、コンデンサ５と第１の配線導体９の他方の端部との間に直列に接続された第１の抵抗体11を備えていることで、コンデンサ５自体の周波数特性による高周波信号の反射を吸収することができるので、第１の配線導体９に入射するノイズ量を低減することができる。その結果として、第１の配線導体９によって高周波信号を良好に伝送して、第１の配線導体９の端部に接続された終端抵抗19によって高周波信号を終端させることができる配線基板１となる。   The first wiring conductor 9 in the wiring board 1 of the present invention has one end connected to the ground conductor via the termination resistor 19 so that the active element 7 is electrically connected to the other end. Is for terminating. The second wiring conductor 13 is for applying a bias voltage to the high-frequency signal transmitted to the first wiring conductor 9 and the active element 7. A second resistor connected in series between the second wiring conductor 13 and the first wiring conductor 9 or between one end and the other end of the second wiring conductor 13 15, it is possible to control the bias voltage applied to the active element 7 while suppressing the high-frequency signal transmitted through the first wiring conductor 9 from flowing into the second wiring conductor 13 which is a bias line. Further, since the capacitor 5 is connected in series between the other end of the first wiring conductor 9 and the terminating resistor 19, the direct current supplied from the second wiring conductor 13 which is a bias line is terminated. The resistance 19 can be prevented from flowing. At this time, an AC high-frequency signal flows through the capacitor 5 to the termination resistor 19, so that the active element 7 electrically connected to the other end of the first wiring conductor 9 is terminated by the termination resistor 19. Is done. And by providing the 1st resistor 11 connected in series between the capacitor | condenser 5 and the other edge part of the 1st wiring conductor 9, reflection of the high frequency signal by the frequency characteristic of the capacitor | condenser 5 itself is reflected. Since it can be absorbed, the amount of noise incident on the first wiring conductor 9 can be reduced. As a result, the high-frequency signal can be satisfactorily transmitted by the first wiring conductor 9 and the high-frequency signal can be terminated by the terminating resistor 19 connected to the end of the first wiring conductor 9. .

第１の抵抗体11および第２の抵抗体15の抵抗値については、能動素子７のインピーダンスをＺｌ、第１の抵抗体11の抵抗値をＲ１、第２の抵抗体15の抵抗値をＲ２とした場合に、Ｒ１＜Ｚｌ＜Ｒ２であることが好ましい。Ｒ１をＺｌより小さくすることによって、能動素子７から第１の配線導体９の他方の端部を介して入力された高周波信号が、第１の抵抗体11にて反射されることなく終端抵抗19まで伝送されるので、終端抵抗19によって効率よく終端させることができる。また、Ｒ２をＺｌより大きくすることで、第２の抵抗体15によって、第１の配線導体９を伝送する高周波信号がバイアス線路である第２の配線導体13に流れ込むのを抑制することができる。   Regarding the resistance values of the first resistor 11 and the second resistor 15, the impedance of the active element 7 is Zl, the resistance value of the first resistor 11 is R1, and the resistance value of the second resistor 15 is R2. In this case, it is preferable that R1 <Zl <R2. By making R1 smaller than Zl, the high-frequency signal input from the active element 7 through the other end of the first wiring conductor 9 is not reflected by the first resistor 11, but the terminating resistor 19 Can be terminated efficiently by the termination resistor 19. Further, by making R2 larger than Zl, the second resistor 15 can suppress the high-frequency signal transmitted through the first wiring conductor 9 from flowing into the second wiring conductor 13 which is a bias line. .

また、終端抵抗19の抵抗値をＲｔとした場合には、Ｒ１＋Ｒｔ＝Ｚｌであることが好ましい。これにより、第１の配線導体９における終端抵抗19と第１の抵抗体11との間の距離よりも十分に長い、伝送される高周波信号に含まれる低周波成分もインピーダンスがマッチングされるので、低周波成分の反射によるノイズ量を低減することができ、ノイズがより低減されてより良好な終端特性を有する配線基板となる。また、実用上は、（Ｒ１＋Ｒｔ）とＺｌとが同じ値でなくても、それらの差が20％程度以内（Ｒ１＋Ｒｔ＝0.8〜1.2Ｚｌ）であれば、低周波成分のインピーダンスのミスマッチは大きな問題とはならないので、第１の抵抗体11の抵抗値Ｒ１および終端抵抗19の抵抗値Ｒｔと能動素子７のインピーダンスＺｌとの関係をこのようにすればよい。   Further, when the resistance value of the termination resistor 19 is Rt, it is preferable that R1 + Rt = Zl. As a result, the impedance of the low-frequency component included in the transmitted high-frequency signal that is sufficiently longer than the distance between the termination resistor 19 and the first resistor 11 in the first wiring conductor 9 is also matched. The amount of noise due to reflection of the low frequency component can be reduced, and the noise is further reduced, resulting in a wiring board having better termination characteristics. In practice, even if (R1 + Rt) and Zl are not the same value, if the difference between them is within about 20% (R1 + Rt = 0.8 to 1.2Zl), the impedance mismatch of the low frequency component is a big problem. Therefore, the relationship between the resistance value R1 of the first resistor 11 and the resistance value Rt of the termination resistor 19 and the impedance Zl of the active element 7 may be made in this way.

コンデンサ５は、第２の配線導体13から供給される直流電流が終端抵抗19へ流れないようにするためのものであるので、第２の配線導体13から供給される直流電流に対して十分に耐電圧が確保されている必要があり、コンデンサの定格電圧等を考慮して選ばれる。一方、第１の配線導体９を伝送する高周波信号が終端抵抗19まで流れるようにするために、高周波信号に含まれる低周波成分が十分に通過するような静電容量を有するものが選ばれる。例えば、高周波信号が16ｋＨｚ以上の周波数成分からなる場合であれば、最低周波数である16ｋＨｚの通過量が３ｄＢ以上となるようにするには、コンデンサ５は静電容量が0.1μＦ以上であるものを用いればよい。   Since the capacitor 5 is for preventing the direct current supplied from the second wiring conductor 13 from flowing to the termination resistor 19, the capacitor 5 is sufficient for the direct current supplied from the second wiring conductor 13. The withstand voltage needs to be secured and is selected in consideration of the rated voltage of the capacitor. On the other hand, in order to allow the high-frequency signal transmitted through the first wiring conductor 9 to flow to the termination resistor 19, the one having a capacitance that allows a low-frequency component contained in the high-frequency signal to pass sufficiently is selected. For example, if the high-frequency signal is composed of frequency components of 16 kHz or more, the capacitor 5 must have a capacitance of 0.1 μF or more in order to make the minimum frequency 16 kHz passing amount be 3 dB or more. Use it.

第１の配線導体９の寸法，第１の抵抗体11の寸法および抵抗値，第２の配線導体13および第２の抵抗体15の寸法や配置および誘電体基板３の比誘電率や厚みは、能動素子７のインピーダンス等に合わせて適宜設定される。   The dimensions of the first wiring conductor 9, the dimensions and resistance values of the first resistor 11, the dimensions and arrangement of the second wiring conductor 13 and the second resistor 15, and the relative dielectric constant and thickness of the dielectric substrate 3 are as follows: It is appropriately set according to the impedance of the active element 7 and the like.

例えば、配線基板１が、比誘電率が9.6の酸化アルミニウム質焼結体からなり、厚みが0.5ｍｍである誘電体基板３を用いた場合であれば、第１の配線導体９は、幅を0.52ｍｍとして、厚みを0.002ｍｍとすることにより、50Ωにインピーダンス整合させたマイクロストリップ線路とすることができる。第２の配線導体13は、第１の配線導体９と同じ厚みで幅を0.1ｍｍとして、その一部を厚みが0.1μｍで長さが0.2ｍｍの窒化タンタルからなる第２の抵抗体15とすれば、Ｒ２は約100ΩとなってＺｌ＜Ｒ２となる。第２の配線導体13の一部を第２の抵抗体15とするには、一部を薄膜や厚膜による抵抗体で形成するか、チップ抵抗を搭載すればよい。また、コンデンサ５は、例えば、静電容量が0.1μＦで定格電圧が16Ｖであるものとして、第１の配線導体９と同等の幅の市販のチップコンデンサを搭載すればよい。また、第１の抵抗体11を厚みが0.1μｍで長さが0.26ｍｍの窒化タンタルによって形成して、その抵抗値をＲ１＝25Ωとすれば、このようなコンデンサ５の周波数特性による高周波信号の反射を吸収することができ、Ｒ１＜Ｚｌ＜Ｒ２となる。そして、終端抵抗19をＲｔ＝25Ωとすると、良好に高周波信号終端することができるとともに、Ｒ１＋Ｒｔ＝Ｚｌとなる。   For example, if the wiring board 1 is made of a dielectric substrate 3 made of an aluminum oxide sintered body having a relative dielectric constant of 9.6 and a thickness of 0.5 mm, the first wiring conductor 9 has a width of By setting the thickness to 0.52 mm and the thickness to 0.002 mm, a microstrip line impedance matched to 50Ω can be obtained. The second wiring conductor 13 has the same thickness as the first wiring conductor 9 and a width of 0.1 mm, and a part of the second wiring conductor 13 is a second resistor 15 made of tantalum nitride having a thickness of 0.1 μm and a length of 0.2 mm. Then, R2 becomes about 100Ω and Zl <R2. In order to make a part of the second wiring conductor 13 the second resistor 15, a part of the second wiring conductor 13 may be formed of a thin film or thick film resistor, or a chip resistor may be mounted. The capacitor 5 may be a commercially available chip capacitor having a width equivalent to that of the first wiring conductor 9, for example, assuming that the capacitance is 0.1 μF and the rated voltage is 16V. Further, if the first resistor 11 is formed of tantalum nitride having a thickness of 0.1 μm and a length of 0.26 mm, and the resistance value is R1 = 25Ω, the high-frequency signal due to the frequency characteristic of the capacitor 5 is obtained. The reflection can be absorbed and R1 <Zl <R2. If the terminating resistor 19 is Rt = 25Ω, the high-frequency signal can be satisfactorily terminated and R1 + Rt = Zl.

図１および図２に示す例のような、本発明の第１の実施形態では、第１の抵抗体11が、第１の配線導体９と第２の配線導体13との接続部分と、能動素子７が接続される他方の端部との間に位置している。これにより、コンデンサ５自体の周波数特性による反射信号に加えて、第１の配線導体９と第２の配線導体13との接続部および第２の配線導体13の第１の配線導体９との接続部分から第２の抵抗体13までの間の部分において発生した反射信号を第１の抵抗体11で熱として吸収することができ、このような反射信号（によるノイズ）の第１の配線導体９の他方の端部に接続される能動素子７への入射を抑制することができる。   In the first embodiment of the present invention, such as the example shown in FIG. 1 and FIG. 2, the first resistor 11 is connected to the connection portion between the first wiring conductor 9 and the second wiring conductor 13, and active. It is located between the other end to which the element 7 is connected. As a result, in addition to the reflected signal due to the frequency characteristics of the capacitor 5 itself, the connection portion between the first wiring conductor 9 and the second wiring conductor 13 and the connection between the second wiring conductor 13 and the first wiring conductor 9. The reflected signal generated in the portion between the portion and the second resistor 13 can be absorbed as heat by the first resistor 11, and the first wiring conductor 9 of such reflected signal (noise). Incidence to the active element 7 connected to the other end of the first electrode can be suppressed.

図３および図４に示す例のような、本発明の第２の実施形態における配線基板１では、第１の実施形態における配線基板１と比較して、第１の抵抗体11が、第１の配線導体９と第２の配線導体13との接続部分と、コンデンサ５との間に位置している。これにより、コンデンサ５自体の周波数特性による高周波信号の反射については、第１の抵抗体11で熱として吸収することができ、かつ、直流電源が接続される第２の配線導体13の他方の端部と能動素子７が接続される第１の配線導体９の他方の端部との間には、第１の抵抗体11は存在せずに第２の抵抗体15のみが存在することから、この間の抵抗値が小さいものとなるので、第２の配線導体13によって能動素子７に供給する直流バイアス電流を低電圧にすることができる。直流バイアス電流が低電圧になると、直流バイアス電流を供給する装置を小型にすることができることから、配線基板１を搭載した能動素子装置が組み込まれたシステムを小型にすることができるので好ましい。   In the wiring substrate 1 according to the second embodiment of the present invention as in the examples shown in FIGS. 3 and 4, the first resistor 11 is the first resistor 11 as compared with the wiring substrate 1 according to the first embodiment. The wiring conductor 9 and the second wiring conductor 13 are located between the connection portion and the capacitor 5. Thereby, the reflection of the high frequency signal due to the frequency characteristic of the capacitor 5 itself can be absorbed as heat by the first resistor 11, and the other end of the second wiring conductor 13 to which the DC power supply is connected. Since the first resistor 11 does not exist and only the second resistor 15 exists between the first wiring conductor 9 and the other end of the first wiring conductor 9 to which the active element 7 is connected, Since the resistance value during this period is small, the DC bias current supplied to the active element 7 by the second wiring conductor 13 can be made low. When the DC bias current becomes a low voltage, the device for supplying the DC bias current can be reduced in size, which is preferable because the system incorporating the active element device on which the wiring board 1 is mounted can be reduced in size.

図３に示す例のような第２の実施形態における配線基板１では、第１の配線導体９は一方の端部から他方の端部にかけてその幅が一定であるのに対して、図５に示す例のような本発明の第３の実施形態における配線基板１では、第１の配線導体９は、他方の端部から第１の抵抗体11との第１の接続部にかけて幅が大きくなっており、第１の接続部からコンデンサ５との第２の接続部にかけて幅がさらに大きくなっている。第１の配線導体９は、他方の端部の能動素子７との接続部の幅はＷ１であり、コンデンサ５との第２の接続部の幅はＷ１より大きいＷ３である。そして、その間の幅Ｗ２はＷ１よりも大きくＷ３よりも小さい。つまり、第１の配線導体９は、他方の端部からコンデンサ５との第２の接続部にかけて幅がＷ１＜Ｗ２＜Ｗ３と段階的に大きくなっている。これにより、能動素子７のインピーダンスとマッチングするように微細な幅Ｗ１で形成された第１の配線導体９の他方の端部に対して、高周波信号に含まれる低周波成分が十分に通過するような高容量で、第２の配線導体13から供給される直流電流が終端抵抗19へ流れないような高耐電圧である大型のコンデンサ５を搭載するために、コンデンサ５との第２の接続部の幅Ｗ３を大きくした場合であっても、それらの間の部分の幅Ｗ２をそれらの幅の中間の幅としているので、第１の配線導体９におけるインピーダンスのミスマッチが低減される。このとき、幅Ｗ２の部分に直列に接続されている第１の抵抗体９の幅は、第１の抵抗体９の部分で線路の幅が変わることによって信号の反射が発生しないように、同じくＷ２とするのが好ましい。また、この幅がＷ２の部分の長さＬが第１の配線導体９を伝送する高周波信号の波長の４分の１以下であると、この部分における信号の反射が抑えられ、ノイズ量がより低減するので好ましい。   In the wiring board 1 in the second embodiment as in the example shown in FIG. 3, the width of the first wiring conductor 9 is constant from one end to the other end, whereas in FIG. In the wiring board 1 according to the third embodiment of the present invention as shown in the example, the width of the first wiring conductor 9 increases from the other end portion to the first connecting portion with the first resistor 11. The width is further increased from the first connection portion to the second connection portion with the capacitor 5. In the first wiring conductor 9, the width of the connection portion with the active element 7 at the other end is W1, and the width of the second connection portion with the capacitor 5 is W3, which is larger than W1. And the width W2 between them is larger than W1 and smaller than W3. In other words, the width of the first wiring conductor 9 is gradually increased from W1 <W2 <W3 to the second connection portion with the capacitor 5 from the other end portion. As a result, the low-frequency component included in the high-frequency signal sufficiently passes through the other end of the first wiring conductor 9 formed with a fine width W1 so as to match the impedance of the active element 7. In order to mount a large capacitor 5 having a high capacity and a high withstand voltage so that a direct current supplied from the second wiring conductor 13 does not flow to the terminating resistor 19, a second connecting portion with the capacitor 5 is used. Even when the width W3 of the first wiring conductor 9 is increased, the width W2 of the portion between them is an intermediate width between them, so that the impedance mismatch in the first wiring conductor 9 is reduced. At this time, the width of the first resistor 9 connected in series to the portion of the width W2 is the same so that signal reflection does not occur due to the change of the line width in the portion of the first resistor 9. W2 is preferable. Further, when the length L of the portion having the width W2 is equal to or less than ¼ of the wavelength of the high-frequency signal transmitted through the first wiring conductor 9, the signal reflection at this portion is suppressed, and the amount of noise is further increased. Since it reduces, it is preferable.

本発明の第３の実施形態における配線基板１は、例えば、比誘電率が9.6の酸化アルミニウム質焼結体からなり、厚みが0.25ｍｍである誘電体基板３を用いた場合であれば、第１の配線導体９の他方の端部の幅Ｗ１を0.265ｍｍとし、厚みを0.002ｍｍとすることにより、上述した第１の実施形態の例と同様に50Ωにインピーダンス整合させた微細なマイクロストリップ線路とすることができる。第２の配線導体13および第２の抵抗体15は、上述した第１の実施形態の例と同様にすればよい。第３の実施形態の場合は、コンデンサ５としては、第１の配線導体９の他方の端部の幅Ｗ１より大きいサイズのものを選択することができ、例えば、静電容量0.1μＦで定格電圧16Ｖのものとして市販のチップコンデンサから幅が0.5ｍｍである1005型のものを選択して用いることができる。より高静電容量で高定格電圧が必要な場合は、1608型等のより大型のコンデンサを選択することができる。このときの第１の配線導体９のコンデンサ５との接続部分における幅Ｗ３は、コンデンサ５の幅と同じ0.5ｍｍとする。   The wiring board 1 in the third embodiment of the present invention is, for example, a case where a dielectric substrate 3 made of an aluminum oxide sintered body having a relative dielectric constant of 9.6 and having a thickness of 0.25 mm is used. A fine microstrip line impedance-matched to 50Ω as in the first embodiment described above by setting the width W1 of the other end of one wiring conductor 9 to 0.265 mm and the thickness to 0.002 mm. It can be. The second wiring conductor 13 and the second resistor 15 may be the same as those in the first embodiment described above. In the case of the third embodiment, a capacitor having a size larger than the width W1 of the other end of the first wiring conductor 9 can be selected as the capacitor 5. For example, the rated voltage is 0.1 μF in capacitance. A 1005 type capacitor having a width of 0.5 mm can be selected from commercially available chip capacitors as a 16V capacitor. When higher capacitance and higher rated voltage are required, a larger capacitor such as the 1608 type can be selected. At this time, the width W3 of the connection portion of the first wiring conductor 9 with the capacitor 5 is set to 0.5 mm, which is the same as the width of the capacitor 5.

第１の抵抗体11は、その幅をＷ１より大きくＷ３より小さい幅であるＷ２＝0.38ｍｍとした場合は、厚みが0.1μｍで長さが0.15ｍｍの窒化タンタルによって形成して、その抵抗値をＲ１＝20Ωとすれば、このようなコンデンサ５の周波数特性による高周波信号の反射を吸収することができ、Ｒ１＜Ｚｌ＜Ｒ２となる。このときの第１の配線導体９の第１の抵抗体11との接続部分の幅も、この部分での反射を抑えるためにＷ２であり、第１の抵抗体11を含めた、幅がＷ２である部分９ａの長さＬが、第１の配線導体９を伝送する高周波信号の高周波成分が例えば40ＧＨｚである場合であれば、波長＝3.11ｍｍの４分の１以下となるようにその長さを設定する。この場合は、第１の抵抗体11の両側の第１の配線導体９の長さをともに0.31ｍｍ以下の接続部とすればよい。また、終端抵抗19は、第１の配線導体９と終端抵抗19との接続部での反射を抑えるために、その幅を第１の配線導体９のコンデンサ５との接続部分における幅Ｗ３と同じく0.5ｍｍとし、厚みが0.1μｍで長さが0.3ｍｍの窒化タンタルで形成することによって、その抵抗値Ｒｔ＝30Ωとすることができ、Ｒ１＋Ｒｔ＝Ｚｌとなる。   The first resistor 11 is formed of tantalum nitride having a thickness of 0.1 μm and a length of 0.15 mm when the width is W2 = 0.38 mm, which is greater than W1 and smaller than W3. If R1 = 20Ω, the reflection of the high frequency signal due to the frequency characteristics of the capacitor 5 can be absorbed, and R1 <Zl <R2. The width of the connection portion of the first wiring conductor 9 at this time with the first resistor 11 is also W2 in order to suppress reflection at this portion, and the width including the first resistor 11 is W2. If the high-frequency component of the high-frequency signal transmitted through the first wiring conductor 9 is, for example, 40 GHz, the length L of the portion 9a is such that the wavelength L is equal to or less than a quarter of 3.11 mm. Set the size. In this case, both the lengths of the first wiring conductors 9 on both sides of the first resistor 11 may be connected portions of 0.31 mm or less. The termination resistor 19 has the same width as the width W3 of the connection portion of the first wiring conductor 9 with the capacitor 5 in order to suppress reflection at the connection portion between the first wiring conductor 9 and the termination resistor 19. By forming it with tantalum nitride having a thickness of 0.5 mm, a thickness of 0.1 μm and a length of 0.3 mm, the resistance value Rt = 30Ω can be obtained, and R1 + Rt = Zl.

図６に示す例のような、本発明の第４の実施形態における配線基板１は、図５に示す第３の実施形態における配線基板１と比較して、第１の配線導体９は、その幅がＷ１である部分とＷ２である部分との間、およびＷ２である部分とＷ３である部分との間では、幅が狭いほうから広い方にかけて徐々に幅が広くなるように逆テーパー状となっている。これにより、第１の配線導体９の線幅が変化することによって発生するインピーダンスのミスマッチがさらに低減され、この部分における信号の反射が抑えられて、ノイズ量をより低減することができる。この場合は、幅がＷ２である部分とその両側の線幅が徐々に変化する部分を含めた長さＬが、第１の配線導体９を伝送する高周波信号の波長の４分の１以下であると、この部分における信号の反射が抑えられ、ノイズ量がより低減することができるので好ましい。   The wiring board 1 in the fourth embodiment of the present invention, such as the example shown in FIG. 6, is different from the wiring board 1 in the third embodiment shown in FIG. Between the portion with the width W1 and the portion with W2, and between the portion with W2 and the portion with W3, an inverse taper shape is formed so that the width gradually increases from the narrower to the wider. It has become. As a result, impedance mismatch caused by a change in the line width of the first wiring conductor 9 is further reduced, signal reflection at this portion is suppressed, and the amount of noise can be further reduced. In this case, the length L including the portion where the width is W2 and the portion where the line widths on both sides thereof gradually change is not more than a quarter of the wavelength of the high-frequency signal transmitted through the first wiring conductor 9. If it exists, since the reflection of the signal in this part is suppressed and noise amount can be reduced more, it is preferable.

誘電体基板３としては、絶縁性の部材を用いることができる。具体的には、酸化アルミニウム，窒化アルミニウム，窒化珪素，ムライト等を主成分とするセラミック材料，ガラス，あるいはガラスとセラミックフィラーとの混合物を焼成して形成されたガラスセラミック材料，エポキシ樹脂，ポリイミド樹脂，四フッ化エチレン樹脂を始めとするフッ素系樹脂等の有機樹脂系材料，有機樹脂−セラミック（ガラスも含む）複合系材料等を用いることができる。   As the dielectric substrate 3, an insulating member can be used. Specifically, ceramic materials mainly composed of aluminum oxide, aluminum nitride, silicon nitride, mullite, etc., glass ceramic materials formed by firing glass or a mixture of glass and ceramic filler, epoxy resin, polyimide resin Organic resin materials such as fluororesins such as tetrafluoroethylene resin, organic resin-ceramic (including glass) composite materials, and the like can be used.

特に、誘電体基板３としてはセラミック材料を用いることが好ましい。これは、セラミック材料は低損失材料であることから、高周波信号を損失なく伝送することができるからである。また、熱伝導率が高く、温度による物性変化が小さいため、抵抗体等で発生した熱による特性変動を抑えることができるからである。   In particular, it is preferable to use a ceramic material for the dielectric substrate 3. This is because the ceramic material is a low-loss material and can transmit a high-frequency signal without loss. Moreover, since the thermal conductivity is high and the change in physical properties due to temperature is small, it is possible to suppress fluctuations in characteristics due to heat generated in a resistor or the like.

誘電体基板３は、例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ（Ａｌ２Ｏ３）やシリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤，溶媒を添加混合して泥漿状とし、これを周知のドクターブレード法やカレンダーロール法等によってシート状に成形してセラミックグリーンシート（以下、グリーンシートともいう）を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層し、これを約1600℃の温度で焼成することによって製作される。または、Ａｌ２Ｏ３，ＳｉＯ２，ＣａＯ，ＭｇＯ等の原料粉末に必要に応じて有機バインダーを加えたものを金型に充填してプレス成型することによって所定の形状に成形して、この成形体を約1600度の温度で焼成することによって製作される。 If the dielectric substrate 3 is made of, for example, an aluminum oxide sintered body, it is suitable for a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. An organic solvent and a solvent are added and mixed to form a slurry, which is formed into a sheet shape by a known doctor blade method, calendar roll method, or the like to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of sheets are laminated as necessary, and the green sheet is fired at a temperature of about 1600 ° C. Alternatively, a raw material powder such as Al 2 O 3 , SiO 2 , CaO, MgO or the like added with an organic binder as necessary is filled into a mold and press-molded to form a predetermined shape. Manufactured by firing the body at a temperature of about 1600 degrees.

第１の配線導体９，第２の配線導体13および接地導体17としては、導電性の良い部材を用いればよい。具体的には、Ａｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐｔ，Ｐｄ，ＷおよびＭｏのような金属部材を用いることができる。   As the first wiring conductor 9, the second wiring conductor 13, and the ground conductor 17, a member having good conductivity may be used. Specifically, metal members such as Au, Ag, Cu, Al, Pt, Pd, W, and Mo can be used.

第１の配線導体９，第２の配線導体13および接地導体17の形成は、誘電体基板３がセラミック材料からなる場合であれば、上記金属部材の粉末に適当な有機バインダーや溶剤を添加混合してペースト状にしたものを、従来周知のスクリーン印刷法により、セラミックグリーンシートまたはその積層体あるいはセラミックスの成形体に所定形状に印刷塗布しておき、これらと同時焼成することによって形成される。誘電体基板３を作製した後に、誘電体基板３上に同様のペーストを印刷塗布して焼成することによって、メタライズ層を焼き付けてもよい。誘電体基板３が有機樹脂からなる場合は、銅（Ｃｕ）等の金属箔をエッチング加工により第１の配線導体９，第２の配線導体13および接地導体17の形状に加工したものを転写する方法がある。   If the dielectric substrate 3 is made of a ceramic material, the first wiring conductor 9, the second wiring conductor 13 and the ground conductor 17 are formed by adding and mixing an appropriate organic binder or solvent to the powder of the metal member. Then, the paste is formed into a paste by printing and coating it in a predetermined shape on a ceramic green sheet, a laminate thereof, or a ceramic molded body by a well-known screen printing method, and simultaneously firing them. After the dielectric substrate 3 is manufactured, the metallized layer may be baked by printing and applying the same paste on the dielectric substrate 3 and baking it. When the dielectric substrate 3 is made of an organic resin, a metal foil such as copper (Cu) that has been processed into the shape of the first wiring conductor 9, the second wiring conductor 13, and the ground conductor 17 by etching is transferred. There is a way.

また、第１の配線導体９，第２の配線導体13および接地導体17を形成する方法としては、誘電体基板３を作製した後に蒸着法やフォトリソグラフィ法により形成する方法がある。半導体素子等の能動素子７の配線は微細であり、これと接続される第１の配線導体９も対応して微細なものとなるため、蒸着法やフォトリソグラフィ法等の薄膜形成法により形成する方法が好ましい。この場合は、第１の配線導体９，第２の配線導体13および接地導体17の形成前に、必要に応じて基板１ａの主面に研磨加工を施すとよい。   As a method of forming the first wiring conductor 9, the second wiring conductor 13, and the ground conductor 17, there is a method of forming the dielectric substrate 3 and then forming it by vapor deposition or photolithography. Since the wiring of the active element 7 such as a semiconductor element is fine and the first wiring conductor 9 connected to the active element 7 is also fine, it is formed by a thin film forming method such as a vapor deposition method or a photolithography method. The method is preferred. In this case, before the formation of the first wiring conductor 9, the second wiring conductor 13, and the ground conductor 17, the main surface of the substrate 1a may be polished as necessary.

以下、第１の配線導体９，第２の配線導体13および接地導体17となる配線導体等を薄膜形成技術により形成する場合について詳細に説明する。配線導体は、例えば密着金属層，拡散防止層および主導体層が順次積層された３層構造の導体層から成る。   Hereinafter, the case where the first wiring conductor 9, the second wiring conductor 13, and the wiring conductor to be the ground conductor 17 are formed by a thin film forming technique will be described in detail. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated.

密着金属層は、セラミックス等から成る絶縁基板２との密着性を良好とするという観点からは、チタン（Ｔｉ），クロム（Ｃｒ），タンタル（Ｔａ），ニオブ（Ｎｂ），ニッケル−クロム（Ｎｉ−Ｃｒ）合金および窒化タンタル（Ｔａ２Ｎ）等の熱膨張率がセラミックスと近い金属のうちの少なくとも１種より成るのが好ましく、その厚みは0.01〜0.2μｍ程度が好ましい。密着金属層の厚みが0.01μｍ未満では、密着金属層を誘電体基板３に強固に密着させることが困難となる傾向がある。一方、密着金属層の厚みが0.2μｍを超えると、成膜時の内部応力によって密着金属層が誘電体基板３から剥離し易くなる傾向がある。 From the viewpoint of improving the adhesion with the insulating substrate 2 made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni -cr) is preferably an alloy, and tantalum nitride (Ta 2 N) such as a thermal expansion coefficient is formed of at least one of ceramics and near the metal, its thickness is about 0.01~0.2μm are preferred. If the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the dielectric substrate 3. On the other hand, if the thickness of the adhesion metal layer exceeds 0.2 μm, the adhesion metal layer tends to be peeled off from the dielectric substrate 3 due to internal stress during film formation.

拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金（Ｐｔ），パラジウム（Ｐｄ），ロジウム（Ｒｈ），ニッケル（Ｎｉ），Ｎｉ−Ｃｒ合金およびＴｉ−Ｗ合金等の熱伝導性の良好な金属のうち少なくとも１種より成ることが好ましく、その厚みは0.05〜１μｍ程度が好ましい。拡散防止層の厚みが0.05μｍ未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向があり、１μｍを超えると、成膜時の内部応力により拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にＮｉ−Ｃｒ合金を用いる場合は、Ｎｉ−Ｃｒ合金は誘電体基板３との密着性が良好なため、密着金属層を省くことも可能である。   From the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer, the diffusion prevention layer is platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, and Ti—. It is preferably made of at least one metal having good thermal conductivity such as W alloy, and the thickness is preferably about 0.05 to 1 μm. If the thickness of the diffusion prevention layer is less than 0.05 μm, defects such as pinholes tend to be generated, making it difficult to perform the function as the diffusion prevention layer. If the thickness exceeds 1 μm, the diffusion prevention layer is caused by internal stress during film formation. There is a tendency to easily peel from the adhesion metal layer. When a Ni—Cr alloy is used for the diffusion prevention layer, the Ni—Cr alloy has good adhesion to the dielectric substrate 3, and therefore the adhesion metal layer can be omitted.

主導体層は、電気抵抗の小さい金（Ａｕ），Ｃｕ，Ｎｉおよび銀（Ａｇ）の少なくとも１種より成ることが好ましく、その厚みは0.1〜５μｍ程度が好ましい。主導体層の厚みが0.1μｍ未満では、電気抵抗が大きなものとなって接続基板１の第１の配線導体９，第２の配線導体13および接地導体17となる配線導体に要求される電気抵抗を満足できなくなる傾向があり、５μｍを超えると、成膜時の内部応力により主導体層が拡散防止層から剥離し易く成る傾向がある。また、Ｃｕは酸化し易いので、その上にＮｉおよびＡｕからなる保護層を被覆してもよい。   The main conductor layer is preferably made of at least one of gold (Au), Cu, Ni and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance becomes large and the electric resistance required for the wiring conductors to be the first wiring conductor 9, the second wiring conductor 13 and the ground conductor 17 of the connection substrate 1. When the thickness exceeds 5 μm, the main conductor layer tends to be peeled off from the diffusion preventing layer due to internal stress during film formation. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

第１の抵抗体11，第２の抵抗体15および終端抵抗19としては、抵抗率の高い材料を用いればよい。具体的には、窒化タンタル（Ｔａ２Ｎ），酸化ルテニウム（ＲｕＯ２），ニッケルクロム合金（Ｎｉ−Ｃｒ）、銅ニッケル合金（Ｃｕ−Ｎｉ）または銅マンガン合金（Ｃｕ−Ｍｎ）等の抵抗体材料を用いることができる。 As the first resistor 11, the second resistor 15, and the termination resistor 19, a material having a high resistivity may be used. Specifically, resistors such as tantalum nitride (Ta 2 N), ruthenium oxide (RuO 2 ), nickel chromium alloy (Ni—Cr), copper nickel alloy (Cu—Ni), or copper manganese alloy (Cu—Mn) Materials can be used.

第１の抵抗体11，第２の抵抗体15および終端抵抗19の形成は、例えば抵抗体材料がＴａ２Ｎからなる場合であれば、薄膜形成技術によって、第１の配線導体９および第２の配線導体13が形成された誘電体基板３上に形成すればよい。あるいは抵抗体材料が、例えばＲｕＯ２のような酸化物やＮｉ−Ｃｒのような金属の場合であれば、その粉末を主成分とするペーストを第１の配線導体９，第２の配線導体13および接地導体17が形成された誘電体基板３上に印刷塗布して焼結させる厚膜法によって形成すればよい。薄膜によって形成すると、寸法精度に優れることから、抵抗値の精度が高いものとなるので好ましい。厚膜法で形成する場合は、レーザ等によるトリミングで抵抗値を調整するとよい。あるいは、チップ抵抗器をはんだや導電性接着剤により実装してもよい。また、終端抵抗19は、図７に示す例のように、誘電体基板３の側面に形成してもよい。 For example, when the resistor material is made of Ta 2 N, the first resistor 11, the second resistor 15, and the termination resistor 19 are formed by a thin film formation technique. It may be formed on the dielectric substrate 3 on which the wiring conductor 13 is formed. Alternatively, when the resistor material is, for example, an oxide such as RuO 2 or a metal such as Ni—Cr, a paste mainly composed of the powder is used as the first wiring conductor 9 and the second wiring conductor 13. And a thick film method in which the dielectric substrate 3 on which the ground conductor 17 is formed is printed, applied, and sintered. Forming with a thin film is preferable because it has excellent dimensional accuracy, and thus the resistance value has high accuracy. When the thick film method is used, the resistance value may be adjusted by trimming with a laser or the like. Alternatively, the chip resistor may be mounted with solder or a conductive adhesive. Further, the termination resistor 19 may be formed on the side surface of the dielectric substrate 3 as in the example shown in FIG.

また、第２の抵抗体15は、第２の配線導体13の第１の配線導体９との接続部近傍に設置されることが好ましい。特に、第２の抵抗体15は第２の配線導体13より抵抗値が高いので、第２の配線導体13の第１の配線導体９との接続部から第２の抵抗体15までの部分がスタブ線路とみなされ、その長さが第１の配線導体９を伝送する信号の波長のｎ／４（ｎは奇数）倍であると共振によるノイズが発生するので、第２の抵抗体15までの長さは第１の配線導体９を伝送する信号に含まれる最も短い波長（最も周波数が高い信号の波長）の４分の１以下とするのが好ましい。また、第２の配線導体13の第１の配線導体９との接続部から第２の抵抗体15までの間の部分によって寄生容量が発生すると、特性インピーダンスの変化により高周波信号が反射するので、この部分の長さは０とすることが、すなわち第１の配線導体９と第２の配線導体13との間に第２の抵抗体15が配置されることが好ましい。   The second resistor 15 is preferably installed in the vicinity of the connection portion between the second wiring conductor 13 and the first wiring conductor 9. In particular, since the second resistor 15 has a higher resistance value than the second wiring conductor 13, the portion from the connection portion of the second wiring conductor 13 to the first wiring conductor 9 to the second resistor 15 is not present. Since it is regarded as a stub line and its length is n / 4 (n is an odd number) times the wavelength of the signal transmitted through the first wiring conductor 9, noise due to resonance is generated. Is preferably less than or equal to ¼ of the shortest wavelength (the wavelength of the signal having the highest frequency) included in the signal transmitted through the first wiring conductor 9. Further, when parasitic capacitance is generated by a portion between the connection portion of the second wiring conductor 13 and the first wiring conductor 9 and the second resistor 15, a high frequency signal is reflected by a change in characteristic impedance. The length of this portion is preferably 0, that is, the second resistor 15 is preferably disposed between the first wiring conductor 9 and the second wiring conductor 13.

接地導体17は、図３に示す例のように、誘電体基板３の側面から、第１の配線導体９が形成された主面と対向する主面にかけて配置してもよい。このようにすると、配線基板１を能動素子収納用パッケージ21に搭載する際に、はんだ等の接合材によって容易に能動素子収納用パッケージ21に固定することができる。   The ground conductor 17 may be arranged from the side surface of the dielectric substrate 3 to the main surface opposite to the main surface on which the first wiring conductor 9 is formed, as in the example shown in FIG. In this way, when the wiring board 1 is mounted on the active element housing package 21, it can be easily fixed to the active element housing package 21 with a bonding material such as solder.

コンデンサ５としては、積層セラミックコンデンサや単層セラミックコンデンサ等のチップコンデンサを用いればよい。静電容量や定格電圧、または使用環境に合わせて、高誘電率系もしくは温度補償用のチップコンデンサを選ぶことができる。コンデンサ５の第１の配線導体９との電気的接続方法としては、はんだや導電性接着剤（銀ペースト）を用いることができる。   As the capacitor 5, a chip capacitor such as a multilayer ceramic capacitor or a single layer ceramic capacitor may be used. A high-dielectric constant type or temperature-compensating chip capacitor can be selected according to the capacitance, rated voltage, or usage environment. As an electrical connection method of the capacitor 5 to the first wiring conductor 9, solder or a conductive adhesive (silver paste) can be used.

次に、本発明の能動素子収納用パッケージおよび能動素子装置の実施の形態の一例について説明する。   Next, an exemplary embodiment of the active element storage package and the active element device of the present invention will be described.

図７に示すように、本例の能動素子収納用パッケージ21は、主面を有する基体23と、基体23の主面上に配設された上記の例に代表される配線基板１と、基体23の主面上に配設された回路基板25と、基体23の主面上に配設され、配線基板１および回路基板25を囲うように配設された枠体27とを備えている。   As shown in FIG. 7, the active element storage package 21 of this example includes a base 23 having a main surface, a wiring board 1 typified by the above example disposed on the main surface of the base 23, and a base 23, a circuit board 25 disposed on the main surface of the base plate 23, and a frame body 27 disposed on the main surface of the base body 23 so as to surround the wiring board 1 and the circuit board 25.

また、本例の能動素子装置29は、上記の能動素子収納用パッケージ21と、基体23の主面上に配設され、配線基板１および回路基板25に電気的に接続された能動素子７と、枠体27に接合され、配線基板１、回路基板25および能動素子７を封止する蓋体31とを備えている。   The active element device 29 of this example includes the active element housing package 21 described above, and the active element 7 disposed on the main surface of the base 23 and electrically connected to the wiring board 1 and the circuit board 25. And a lid body 31 which is bonded to the frame body 27 and seals the wiring board 1, the circuit board 25 and the active element 7.

基体23は、能動素子７および本発明の配線基板１ならびに回路基板25を搭載するためのものであり、鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金等の金属や銅（Ｃｕ）−タングステン（Ｗ）の焼結材料等から成る四角形状等の板状体である。これらの焼結材料のインゴットに圧延加工や打ち抜き加工等の従来周知の金属加工法、または押出成形法と切削加工法とを組み合わせて施すこと等によって、所定の形状に製作される。   The base 23 is for mounting the active element 7, the wiring board 1 and the circuit board 25 of the present invention, and is made of metal such as iron (Fe) -nickel (Ni) -cobalt (Co) alloy or copper (Cu). -A rectangular plate-like body made of a sintered material of tungsten (W) or the like. The ingots of these sintered materials are manufactured in a predetermined shape by applying a conventionally known metal processing method such as rolling or punching or a combination of an extrusion method and a cutting method.

枠体27は、基体23に搭載された能動素子７、配線基板１および回路基板25を取り囲むように基体23の主面上に形成され、これらを保護するためのものであり、基体23と同様の金属材料からなるものである。枠体27は、基体23と同様にして作製され、Ａｇろう等のろう材を介したろう付け、またはシーム溶接法等の溶接法により基体23と接続される。あるいは、例えばメタル・インジェクション・モールド法等によって基体23と枠体27とを一体成形してもよい。   The frame body 27 is formed on the main surface of the base body 23 so as to surround the active element 7 mounted on the base body 23, the wiring board 1, and the circuit board 25. It is made of a metal material. The frame 27 is manufactured in the same manner as the base 23 and is connected to the base 23 by brazing using a brazing material such as Ag brazing or a welding method such as a seam welding method. Alternatively, the base 23 and the frame 27 may be integrally formed by, for example, a metal injection molding method or the like.

枠体27には、能動素子７と外部回路との間の信号の入出力を行なうための取り出し電極35が設けられている。図７に示す例では、取り出し電極35は、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属からなるものが、枠体27に設けられた貫通孔に封止ガラスによって固定されている。Ｆｅ−Ｎｉ−Ｃｏ合金等の金属から成る円筒形等の筒状の外周導体にホウケイ酸ガラス等の絶縁体（封止ガラス）が充填され、その中心を貫通して取り出し電極35である線状の中心導体を固定することによって同軸コネクタを作製し、この同軸コネクタの外周導体の外面と枠体27に設けられた貫通孔の内面とを金（Ａｕ）−錫（Ｓｎ）合金や鉛（Ｐｂ）−錫（Ｓｎ）合金からなるろう材（はんだ）で接合するとともに封止することによって取り出し電極35を設けてもよい。   The frame body 27 is provided with an extraction electrode 35 for inputting and outputting signals between the active element 7 and an external circuit. In the example shown in FIG. 7, the extraction electrode 35 made of a metal such as an Fe—Ni—Co alloy is fixed to a through-hole provided in the frame body 27 with sealing glass. A cylindrical outer conductor made of a metal such as an Fe-Ni-Co alloy is filled with an insulator (sealing glass) such as borosilicate glass, and the lead electrode 35 passes through the center of the conductor. A coaxial connector is produced by fixing the center conductor of the outer peripheral conductor of the coaxial connector, and the outer surface of the outer peripheral conductor of the coaxial connector and the inner surface of the through hole provided in the frame body 27 are made of gold (Au) -tin (Sn) alloy or lead (Pb ) -Tin (Sn) alloy brazing material (solder) may be joined and sealed to provide the takeout electrode 35.

回路基板25は、能動素子７と取出電極35とを電気的に接続するためのものであり、例えば、配線基板１と同様の誘電体基板の上面に形成された一方の端部が能動素子７に接続され、他方の端部が取出電極35に接続される線路導体（図示せず）と下面に形成された接地導体（図示せず）とによってマイクロストリップ線路型の伝送線路が形成されている。このような回路基板25は、配線基板１と同様にして作製される。   The circuit board 25 is for electrically connecting the active element 7 and the extraction electrode 35. For example, one end formed on the upper surface of the dielectric substrate similar to the wiring board 1 is the active element 7. A microstrip line type transmission line is formed by a line conductor (not shown) whose other end is connected to the extraction electrode 35 and a ground conductor (not shown) formed on the lower surface. . Such a circuit board 25 is manufactured in the same manner as the wiring board 1.

能動素子７としては、具体的には、半導体素子あるいは光変調素子を用いることができる。半導体素子としては、例えば、Ｓｉ，ＧａＡｓまたはＩｎＰを主成分とする基板上に回路等が形成された、レーザーダイオード，フォトダイオード，アンプ，ＩＣおよびＬＳＩが挙げられる。また、光変調素子としては、例えば、ニオブ酸リチウム（ＬｉＮｂＯ３）やＩｎＰまたはポリマー材からなる基板を用いたマッハツェンダー型変調器が挙げられる。 Specifically, a semiconductor element or a light modulation element can be used as the active element 7. Examples of the semiconductor element include a laser diode, a photodiode, an amplifier, an IC, and an LSI in which a circuit or the like is formed on a substrate mainly composed of Si, GaAs, or InP. Examples of the light modulation element include a Mach-Zehnder type modulator using a substrate made of lithium niobate (LiNbO 3 ), InP, or a polymer material.

能動素子７は、Ａｕ−Ｓｎ合金やＰｂ−Ｓｎ合金等からなるはんだ、または銀ペースト等の導電性の樹脂接着材を用いることにより、能動素子７を基体23の主面上に固定することができる。   The active element 7 can be fixed on the main surface of the base 23 by using a conductive resin adhesive such as a solder made of Au—Sn alloy or Pb—Sn alloy or silver paste. it can.

また、基体23の主面上には回路基板25および上記の例に代表される配線基板１が配設されている。回路基板25および配線基板１は、能動素子７と同様に、はんだや樹脂接着材を用いることによって、基体23の主面上に固定される。回路基板25および配線基板１は、能動素子７と電気的に接続されている。具体的には、回路基板25の上面に被着形成されている線路導体と、配線基板１の第１の配線導体９とにそれぞれボンディングワイヤ33を介して電気的に接続されている。   A circuit board 25 and a wiring board 1 typified by the above example are disposed on the main surface of the base 23. As with the active element 7, the circuit board 25 and the wiring board 1 are fixed on the main surface of the substrate 23 by using solder or a resin adhesive. The circuit board 25 and the wiring board 1 are electrically connected to the active element 7. Specifically, the line conductor deposited on the upper surface of the circuit board 25 and the first wiring conductor 9 of the wiring board 1 are electrically connected to each other through bonding wires 33.

このように、本発明の能動素子収納用パッケージおよび能動素子装置は、上記の例に代表されるように、信号の反射によるノイズ量がより低減された本発明の配線基板を備えている。そのため、能動素子における誤作動の発生の可能性が低減されるので、信頼性の高い能動素子収納用パッケージおよび能動素子装置を提供することが可能となる。   As described above, the active element storage package and the active element device of the present invention include the wiring board of the present invention in which the amount of noise due to signal reflection is further reduced, as represented by the above example. As a result, the possibility of malfunctions in the active elements is reduced, so that it is possible to provide an active element storage package and an active element device with high reliability.

本例の能動素子装置29においては、配線基板１における信号の反射によるノイズ量が低減されているので、ボンディングワイヤ33を介して能動素子７にノイズが伝わることによる、能動素子７の誤作動の可能性が低減される。   In the active element device 29 of the present example, the amount of noise due to signal reflection on the wiring board 1 is reduced, so that the active element 7 malfunctions due to noise transmitted to the active element 7 via the bonding wire 33. The possibility is reduced.

なお、本発明は、上記の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を行なうことは何ら差し支えない。例えば、図１，図３，図５および図６に示す例では高周波伝送線路としてマイクロストリップラインの場合を示したが、高周波伝送線路は一部もしくは全体にわたって第１の配線導体９と同一面に接地導体が配置されたコプレーナ線路等であっても構わない。また、終端抵抗19は接地導体17に対して並列に２つ以上に分割しても構わない。その場合には、２つ以上の終端抵抗19の合成抵抗値を終端抵抗値Ｒｔとする。   Note that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention. For example, in the examples shown in FIGS. 1, 3, 5, and 6, the case of a microstrip line is shown as the high-frequency transmission line, but the high-frequency transmission line is partially or entirely on the same plane as the first wiring conductor 9. A coplanar line or the like on which a ground conductor is disposed may be used. Further, the termination resistor 19 may be divided into two or more in parallel to the ground conductor 17. In that case, a combined resistance value of two or more termination resistors 19 is defined as a termination resistance value Rt.

１・・・配線基板
３・・・誘電体基板
５・・・コンデンサ
７・・・能動素子
９・・・第１の配線導体
11・・・第１の抵抗体
13・・・第２の配線導体
15・・・第２の抵抗体
17・・・接地導体
19・・・終端抵抗
21・・・能動素子収納用パッケージ
23・・・基体
25・・・回路基板
27・・・枠体
29・・・能動素子装置
31・・・蓋体
33・・・ボンディングワイヤ
35・・・取出電極 DESCRIPTION OF SYMBOLS 1 ... Wiring board 3 ... Dielectric board | substrate 5 ... Capacitor 7 ... Active element 9 ... 1st wiring conductor
11 ... 1st resistor
13 ... Second wiring conductor
15 ... Second resistor
17 ... Grounding conductor
19 ... Terminal resistor
21 ... Active element storage package
23 ... Base
25 ・ ・ ・ Circuit board
27 ... Frame
29 ・ ・ ・ Active device
31 ... Lid
33 ... Bonding wire
35 ... Extraction electrode

Claims (6)

誘電体基板と、該誘電体基板の主面上に配置され、一方の端部が終端抵抗を介して接地導体に接続されて、他方の端部が能動素子に電気的に接続される第１の配線導体と、該第１の配線導体の前記他方の端部と前記終端抵抗との間の途中に直列に接続されたコンデンサと、前記第１の配線導体の前記他方の端部と前記コンデンサとの間の途中に直列に接続された第１の抵抗体と、一方の端部が前記第１の配線導体の前記他方の端部と前記コンデンサとの間において前記第１の配線導体と電気的に接続され、他方の端部が直流電源と電気的に接続される第２の配線導体と、前記第１の配線導体と前記第２の配線導体との間または前記第２の配線導体の前記一方の端部と前記他方の端部との間の途中に直列に接続された第２の抵抗体とを備えることを特徴とする配線基板。 A dielectric substrate and a first substrate disposed on the main surface of the dielectric substrate, one end of which is connected to the ground conductor via the termination resistor, and the other end is electrically connected to the active element A wiring conductor, a capacitor connected in series between the other end of the first wiring conductor and the termination resistor, the other end of the first wiring conductor and the capacitor A first resistor connected in series between the first wiring conductor and the first wiring conductor and the capacitor between the other end of the first wiring conductor and the capacitor. A second wiring conductor that is electrically connected and whose other end is electrically connected to a DC power source, between the first wiring conductor and the second wiring conductor, or of the second wiring conductor. A second resistor connected in series between the one end and the other end. Wiring board according to claim. 前記第１の配線導体は、前記他方の端部から前記第１の抵抗体との第１の接続部にかけて幅が大きくなっており、該第１の接続部から前記コンデンサとの第２の接続部にかけて幅がさらに大きくなっており、前記他方の端部と前記第２の接続部との間における、前記他方の端部より幅が大きく前記第２の接続部より幅が小さい部分の長さは、前記第１の配線導体を伝送する高周波信号の波長の４分の１以下であることを特徴とする請求項１に記載の配線基板。 The width of the first wiring conductor increases from the other end to the first connection portion with the first resistor, and the second connection from the first connection portion to the capacitor. The width of the portion that is further increased toward the portion, and the width between the other end portion and the second connection portion is larger than the other end portion and smaller than the second connection portion. The wiring board according to claim 1, wherein is not more than a quarter of a wavelength of a high-frequency signal transmitted through the first wiring conductor. 前記第１の抵抗体が、前記第１の配線導体における前記第２の配線導体の接続部分と前記他方の端部との間に配置されていることを特徴とする請求項１または請求項２に記載の配線基板。 3. The first resistor according to claim 1, wherein the first resistor is disposed between a connection portion of the second wiring conductor and the other end of the first wiring conductor. Wiring board as described in. 前記第１の抵抗体が、前記第１の配線導体における前記第２の配線導体の接続部分と前記コンデンサとの間に配置されていることを特徴とする請求項１または請求項２に記載の配線基板。 The said 1st resistance body is arrange | positioned between the connection part of the said 2nd wiring conductor in the said 1st wiring conductor, and the said capacitor | condenser, The Claim 1 or Claim 2 characterized by the above-mentioned. Wiring board. 主面上に能動素子を搭載する搭載部を有する基体と、該基体の主面上に前記搭載部に近接して配設された請求項１乃至請求項４のいずれかに記載の配線基板および回路基板と、前記基体の主面上に、前記搭載部、前記配線基板および前記回路基板を囲うように配設された枠体とを備えていることを特徴とする能動素子収納用パッケージ。 The wiring board according to any one of claims 1 to 4, further comprising: a base having a mounting portion on which an active element is mounted on a main surface; and the main surface of the base disposed in proximity to the mounting portion. An active element storage package comprising: a circuit board; and a frame body disposed on the main surface of the base so as to surround the mounting portion, the wiring board, and the circuit board. 請求項５に記載の能動素子収納用パッケージと、前記基体の前記搭載部に搭載され、前記回路基板および前記配線基板に電気的に接続された能動素子と、前記枠体に接合され、前記回路基板、前記配線基板および前記能動素子を封止する蓋体とを備えていることを特徴とする能動素子装置。 The active element storage package according to claim 5, an active element mounted on the mounting portion of the base body and electrically connected to the circuit board and the wiring board, and joined to the frame, An active element device comprising: a substrate; the wiring board; and a lid for sealing the active element.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318804A (en) * 1993-05-10 1994-11-15 Mitsubishi Electric Corp Resistive terminator
JPH077307A (en) * 1993-06-15 1995-01-10 Fujitsu Ltd Microwave terminator
JP2007149955A (en) * 2005-11-28 2007-06-14 Kyocera Corp Terminal resistance substrate for high frequency and electronic device
JP2008186966A (en) * 2007-01-30 2008-08-14 Kyocera Corp Wiring board, package, and high frequency device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318804A (en) * 1993-05-10 1994-11-15 Mitsubishi Electric Corp Resistive terminator
JPH077307A (en) * 1993-06-15 1995-01-10 Fujitsu Ltd Microwave terminator
JP2007149955A (en) * 2005-11-28 2007-06-14 Kyocera Corp Terminal resistance substrate for high frequency and electronic device
JP2008186966A (en) * 2007-01-30 2008-08-14 Kyocera Corp Wiring board, package, and high frequency device

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