JP5334887B2 - Electronic component mounting package and electronic device using the same - Google Patents

Electronic component mounting package and electronic device using the same Download PDF

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Publication number
JP5334887B2
JP5334887B2 JP2010036140A JP2010036140A JP5334887B2 JP 5334887 B2 JP5334887 B2 JP 5334887B2 JP 2010036140 A JP2010036140 A JP 2010036140A JP 2010036140 A JP2010036140 A JP 2010036140A JP 5334887 B2 JP5334887 B2 JP 5334887B2
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electronic component
signal line
conductor
line conductor
signal terminal
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JP2011171649A (en
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博之 中道
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component mounting package capable of excellently transmitting even a high frequency signal of 25 GHz or higher by reducing impedance mismatching from a signal terminal to a circuit board. <P>SOLUTION: The invention relates to an electronic component mounting package including a substrate 1 comprised of a metal having a through-hole 1a, a signal terminal 3 fixed through a sealing 2 filling the through-hole 1a, and a circuit board 4 which is mounted on an upper surface of the substrate 1 and in which a signal line conductor 4b is formed from an upper surface of an insulated substrate 4a to the middle of its side face, wherein the signal line conductor 4b positioned on the side face of the insulated substrate 4a and a side face of a portion of the signal terminal 3 protruding from the upper surface of the substrate 1 are abutted and connected. An average impedance from the portion of the signal terminal 3 protruding from the substrate 1 to the signal line conductor 4b on the upper surface of the insulated substrate 4a is made closer to a predetermined value, thereby also reducing a transmission loss. Thus, a high frequency signal can be excellently transmitted. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、光通信やマイクロ波通信，ミリ波通信等で使用される、特に10ＧＨｚ以上の高周波信号を伝送する電子部品搭載用パッケージおよびそれを用いた電子装置に関する。   The present invention relates to an electronic component mounting package for transmitting a high-frequency signal of 10 GHz or more, and an electronic apparatus using the same, which are used in optical communication, microwave communication, millimeter wave communication, and the like.

近年、40ｋｍ以下の伝送距離における高速通信に対する需要が急激に増加しており、高速大容量の情報伝送に関する研究開発が進められている。とりわけ、光通信装置を用いて光信号を受発信する電子装置の高速化が注目されており、電子装置による光信号の高出力化と高速化が伝送容量を向上させるための課題として研究開発されている。   In recent years, the demand for high-speed communication at a transmission distance of 40 km or less has increased rapidly, and research and development on high-speed and large-capacity information transmission has been promoted. In particular, high-speed electronic devices that receive and transmit optical signals using optical communication devices are attracting attention, and high-output and high-speed optical signals by electronic devices have been researched and developed as issues to improve transmission capacity. ing.

このような電子装置用の従来の電子部品搭載用パッケージは、図12に断面図で示すように、略中央に電子部品の搭載部を設けた円板状の金属製の基体101に、基体101の上面から下面にかけて貫通する貫通孔101ａを設け、この貫通孔101ａに充填された絶縁性ガラスから成る封止材102を貫通して信号端子103が固定されているものである。また、基体101の
下面には、２つの貫通孔101ａ・101ａの間に接地端子106が接続されている。さらに、基
体101の搭載部にＬＤ（Laser Diode：レーザダイオード）やＰＤ（Photo Diode：フォト
ダイオ−ド）等の光半導体素子を含む光通信装置に用いられている電子部品105を搭載し
て、電子部品105と信号端子103とをボンディングワイヤ107で電気的接続を行ない、基体101の上面の外周領域に電子部品105を覆うように金属製の蓋体を溶接またはろう接により
基体101の上面周縁部に接合して気密封止することによって、電子装置としていた（例え
ば、特許文献１を参照）。 A conventional electronic component mounting package for such an electronic device includes, as shown in a cross-sectional view in FIG. 12, a disc-shaped metal base 101 provided with an electronic component mounting portion at a substantially central position. A through hole 101a penetrating from the upper surface to the lower surface is provided, and the signal terminal 103 is fixed through the sealing material 102 made of insulating glass filled in the through hole 101a. Further, a ground terminal 106 is connected to the lower surface of the base 101 between the two through holes 101a and 101a. Furthermore, an electronic component 105 used in an optical communication device including an optical semiconductor element such as an LD (Laser Diode) or a PD (Photo Diode) is mounted on the mounting portion of the base 101, The electronic component 105 and the signal terminal 103 are electrically connected by the bonding wire 107, and a metal lid is welded or brazed so as to cover the electronic component 105 on the outer peripheral region of the upper surface of the base 101. The electronic device is obtained by joining and sealing hermetically (see, for example, Patent Document 1).

このような従来の電子部品搭載用パッケージにおいては、信号端子103の基体101から突出した部分および信号端子103と電子部品105とを接続するボンディングワイヤ107部では
インピーダンスが高くなって信号の伝送損失が大きいという問題があった。これに対して、図13に示す例のように、電子部品105と信号端子103とを直接ボンディングワイヤ107で
接続するのではなく、信号端子103に対向する側面に接地導体層104ｄを形成し、上面にインピーダンスを整合させた信号線路導体104ｂを形成した回路基板104を介して接続することが提案されている（例えば、特許文献２を参照）。インピーダンスを整合させた信号線路導体104ｂを形成した回路基板104を用い、信号端子103の近くに接地導体層104ｄを配置して、ボンディングワイヤ107の長さを短くすることで、信号端子103の突出した部分から電子部品105までのインピーダンスが高くなることを抑えるというものであった。 In such a conventional electronic component mounting package, the impedance of the portion of the signal terminal 103 protruding from the base 101 and the bonding wire 107 connecting the signal terminal 103 and the electronic component 105 is high, resulting in signal transmission loss. There was a problem of being big. On the other hand, as in the example shown in FIG. 13, instead of directly connecting the electronic component 105 and the signal terminal 103 with the bonding wire 107, the ground conductor layer 104d is formed on the side surface facing the signal terminal 103, It has been proposed to connect via a circuit board 104 formed with a signal line conductor 104b whose impedance is matched on the upper surface (see, for example, Patent Document 2). By using the circuit board 104 on which the signal line conductor 104b with matching impedance is formed, the ground conductor layer 104d is disposed near the signal terminal 103, and the length of the bonding wire 107 is shortened, so that the signal terminal 103 protrudes. It was intended to suppress an increase in impedance from the portion to the electronic component 105.

特開平８−130266号公報JP-A-8-130266 特開2007−123804号公報JP 2007-123804 A

しかしながら、近年では要求される伝送速度が高まり、伝送信号の周波数が25〜40ＧＨｚ程度まで向上してきており、電子装置をより高出力化させ、高速化させることが要求されている。そのため、従来の回路基板104を用いた電子部品搭載用パッケージであっても
、より高周波の信号に対しては信号端子103の基体101から突出した部分からボンディングワイヤ107の部分のインピーダンスが高くなるという問題点は解決されず、この部分のイ
ンピーダンスが高いことによって良好な高周波信号の伝送特性が得られないものであった。 However, in recent years, the required transmission speed has been increased and the frequency of transmission signals has been improved to about 25 to 40 GHz, and it is required to increase the output and speed of electronic devices. Therefore, even in the case of an electronic component mounting package using the conventional circuit board 104, the impedance of the bonding wire 107 portion from the portion protruding from the base 101 of the signal terminal 103 becomes higher for a higher frequency signal. The problem was not solved, and good high-frequency signal transmission characteristics could not be obtained due to the high impedance of this portion.

本発明は上記問題点に鑑み完成されたものであり、その目的は、信号端子が基体から突出した部分から回路基板の信号線路導体までのインピーダンスが高くなることを抑えた、25ＧＨｚ以上の高周波信号を良好に伝送させることができる電子部品搭載用パッケージを提供することにある。   The present invention has been completed in view of the above problems, and its object is to provide a high-frequency signal of 25 GHz or higher that suppresses an increase in impedance from the portion where the signal terminal protrudes from the base to the signal line conductor of the circuit board. It is an object of the present invention to provide a package for mounting an electronic component that can transmit the signal in a satisfactory manner.

本発明の電子部品搭載用パッケージは、上面から下面にかけて貫通する貫通孔を有する金属からなる基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子と、前記基体の上面に搭載された、絶縁基板の上面から側面の途中にかけて信号線路導体が形成された回路基板とを具備しており、前記絶縁基板の側面に位置する前記信号線路導体と前記信号端子の前記基体の上面から突出した部分の側面とが当接して接続されていることを特徴とするものである。   The electronic component mounting package of the present invention includes a base made of a metal having a through hole penetrating from the upper surface to the lower surface, a signal terminal fixed through the sealing material filled in the through hole, A circuit board on which a signal line conductor is formed from the top surface of the insulating substrate to the middle of the side surface, and the base of the signal line conductor and the signal terminal located on the side surface of the insulating substrate. The side surface of the part which protruded from the upper surface of this is contacted and connected.

また、本発明の電子部品搭載用パッケージは、上記構成において、前記絶縁基板の側面に位置する前記信号線路導体に前記信号線路導体から幅方向に平行に延びる容量導体が形成されていることを特徴とするものである。   In the electronic component mounting package of the present invention, in the above structure, the signal line conductor located on the side surface of the insulating substrate is formed with a capacitor conductor extending in parallel in the width direction from the signal line conductor. It is what.

また、本発明の電子装置は、上記各構成の本発明の電子部品搭載用パッケージに電子部品が搭載されていることを特徴とするものである。   The electronic device of the present invention is characterized in that an electronic component is mounted on the electronic component mounting package of the present invention having the above-described configuration.

本発明の電子部品搭載用パッケージは、上面から下面にかけて貫通する貫通孔を有する金属からなる基体と、貫通孔に充填された封止材を貫通して固定された信号端子と、基体の上面に搭載された、絶縁基板の上面から側面の途中にかけて信号線路導体が形成された回路基板とを具備しており、絶縁基板の側面に位置する信号線路導体と信号端子の基体の上面から突出した部分の側面とが当接して接続されていることから、信号端子が基体から突出した部分から回路基板の信号線路導体までの間にはインピーダンスが高くなるボンディングワイヤがなく、信号端子の基体から突出した部分は、基体の上面に突出して信号線路導体と接続される部分においてインピーダンスが高くても、絶縁基板の側面の信号線路導体とろう材等によって接続された部分においては、側面の信号線路導体の厚みが増して信号線路導体と絶縁基板の下面の接地導体（または接地導体として機能する基体）との間の容量が増えることによってインピーダンスが低下するので、信号端子が基体から突出した部分から絶縁基板の上面の信号線路導体までの平均のインピーダンスは所定の値に近いものとなって伝送損失も小さくなり、高周波信号を良好に伝送させることができるようになる。   The electronic component mounting package of the present invention includes a base made of a metal having a through-hole penetrating from the upper surface to the lower surface, a signal terminal that is fixed through the sealing material filled in the through-hole, and an upper surface of the base. A circuit board on which a signal line conductor is formed from the upper surface of the insulating substrate to the middle of the side surface, and a portion protruding from the upper surface of the base of the signal line conductor and the signal terminal located on the side surface of the insulating substrate Since there is no contact between the portion where the signal terminal protrudes from the base and the signal line conductor of the circuit board, there is no bonding wire that increases the impedance, and the signal terminal protrudes from the base of the signal terminal. Even if the part protrudes from the upper surface of the base and is connected to the signal line conductor and has high impedance, it is connected to the signal line conductor on the side surface of the insulating substrate by a brazing material or the like. In this part, since the thickness of the signal line conductor on the side surface increases and the capacitance between the signal line conductor and the ground conductor (or the base that functions as the ground conductor) on the lower surface of the insulating substrate increases, the impedance decreases. The average impedance from the portion where the signal terminal protrudes from the base to the signal line conductor on the upper surface of the insulating substrate is close to a predetermined value, so that transmission loss is reduced and high-frequency signals can be transmitted satisfactorily. Become.

また、本発明の電子部品搭載用パッケージによれば、上記構成において、絶縁基板の側面に位置する信号線路導体に信号線路導体から幅方向に平行に延びる容量導体が形成されているときには、容量導体の位置や大きさによって側面の信号線路導体と接地導体との間の容量をより細かく調整することができるので、信号端子が基体から突出した部分から絶縁基板の上面の信号配線導体までの平均のインピーダンスを所定の値に整合させることができ、伝送損失がより小さく、高周波信号をより良好に伝送させることができる。   According to the electronic component mounting package of the present invention, in the above configuration, when the signal line conductor located on the side surface of the insulating substrate is formed with the capacitor conductor extending in the width direction from the signal line conductor, the capacitor conductor Since the capacitance between the signal line conductor on the side and the ground conductor can be finely adjusted by the position and size of the side, the average of the signal terminal from the portion protruding from the base to the signal wiring conductor on the upper surface of the insulating substrate Impedance can be matched to a predetermined value, transmission loss is smaller, and high-frequency signals can be transmitted better.

また、本発明の電子装置によれば、上記各構成の本発明の電子部品搭載用パッケージに電子部品が搭載されていることから、高周波信号の伝送特性が良好で、高速で動作可能な電子装置となる。   In addition, according to the electronic device of the present invention, since the electronic component is mounted on the electronic component mounting package of the present invention having the above-described configuration, the electronic device has good high-frequency signal transmission characteristics and can operate at high speed. It becomes.

本発明の電子装置の実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic device of this invention. 図１のＡ−Ａ線における断面図である。It is sectional drawing in the AA of FIG. （ａ）は図２のＡ部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the A section of FIG. 2, (b) is sectional drawing in the AA of (a). （ａ）は本発明の電子部品搭載用パッケージの実施の形態の他の例の要部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the principal part of the other example of embodiment of the electronic component mounting package of this invention, (b) is sectional drawing in the AA of (a). . （ａ）は本発明の電子部品搭載用パッケージの実施の形態の他の例の要部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the principal part of the other example of embodiment of the electronic component mounting package of this invention, (b) is sectional drawing in the AA of (a). . （ａ）は本発明の電子部品搭載用パッケージの実施の形態の他の例の要部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the principal part of the other example of embodiment of the electronic component mounting package of this invention, (b) is sectional drawing in the AA of (a). . （ａ）は本発明の電子部品搭載用パッケージの実施の形態の他の例の要部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the principal part of the other example of embodiment of the electronic component mounting package of this invention, (b) is sectional drawing in the AA of (a). . （ａ）は本発明の電子部品搭載用パッケージの実施の形態の他の例の要部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the principal part of the other example of embodiment of the electronic component mounting package of this invention, (b) is sectional drawing in the AA of (a). . （ａ）は本発明の電子部品搭載用パッケージの実施の形態の他の例の要部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the principal part of the other example of embodiment of the electronic component mounting package of this invention, (b) is sectional drawing in the AA of (a). . （ａ）は本発明の電子装置の実施の形態の他の例を示す斜視図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is a perspective view which shows the other example of embodiment of the electronic device of this invention, (b) is sectional drawing in the AA of (a). （ａ）は図10（ｂ）のＡ部を拡大して示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is sectional drawing which expands and shows the A section of FIG.10 (b), (b) is sectional drawing in the AA of (a). 従来の電子装置の実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the conventional electronic device. 従来の電子装置の実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the conventional electronic device.

本発明の電子部品搭載用パッケージおよび電子装置について以下に詳細に説明する。図１〜図９において、１は電子部品搭載用パッケージの基体、１ａは基体１を貫通する貫通孔、２は貫通孔１ａに充填された封止材２、３は封止材２によって基体１から突出して固定された信号端子、４は基体１の上面に搭載された回路基板、４ａは回路基板４の絶縁基板、４ｂは回路基板４の絶縁基板４ａの上面から側面の途中にかけて形成された信号線路導体、４ｃは回路基板４の絶縁基板４ａの側面に形成された容量導体、４ｄは回路基板４の絶縁基板４ａの下面に形成された接地導体、５は電子部品、６は基体１に接続された接地端子、７は電子部品５と信号線路導体４ｂとを電気的に接続するボンディングワイヤ、８は蓋体である。   The electronic component mounting package and electronic device of the present invention will be described in detail below. 1 to 9, reference numeral 1 denotes a substrate of an electronic component mounting package, 1 a denotes a through hole penetrating the substrate 1, 2 denotes a sealing material 2 filled in the through hole 1 a, and 3 denotes a base 1 by the sealing material 2. 4 is a circuit board mounted on the upper surface of the substrate 1, 4a is an insulating substrate of the circuit board 4, and 4b is formed from the upper surface of the insulating substrate 4a of the circuit board 4 to the middle of the side surface. A signal line conductor, 4c is a capacitive conductor formed on the side surface of the insulating substrate 4a of the circuit board 4, 4d is a ground conductor formed on the lower surface of the insulating substrate 4a of the circuit board 4, 5 is an electronic component, and 6 is on the base 1. The connected ground terminal, 7 is a bonding wire for electrically connecting the electronic component 5 and the signal line conductor 4b, and 8 is a lid.

図１〜図９に示す例では、回路基板４は、絶縁基板４ａの上面から側面の途中にかけて信号線路導体４ｂが形成され、下面には接地導体４ｃが形成されてマイクロストリップ線路が形成されている。回路基板４の下面の接地導体４ｄがグラウンドとしても機能する基体１の上面にはんだや導電性接着剤等の導電性の接合材を用いて接続されるとともに固定されることによって回路基板４が金属基体１に搭載されている。そして基体１から突出した信号端子３の端部が回路基板４の側面に形成された信号線路導体４ｂにはんだ等の接合材を用いて接続されて本発明の電子部品搭載用パッケージが構成されている。なお、回路基板４には信号線路導体４ｂ、接地導体４ｄ以外にも、回路基板の目的用途によって回路配線が形成されたり、電子部品が実装されたりしていてもよい。また、図１においては、電子装置の内部構造が分かりやすいように蓋体８を外した状態を示している。   In the example shown in FIGS. 1 to 9, the circuit board 4 has a signal line conductor 4b formed from the upper surface to the middle of the side surface of the insulating substrate 4a, and a ground conductor 4c formed on the lower surface to form a microstrip line. Yes. The circuit board 4 is made of metal by connecting and fixing the grounding conductor 4d on the lower surface of the circuit board 4 to the upper surface of the substrate 1 that also functions as a ground by using a conductive bonding material such as solder or conductive adhesive. It is mounted on the substrate 1. Then, the end portion of the signal terminal 3 protruding from the base 1 is connected to the signal line conductor 4b formed on the side surface of the circuit board 4 using a bonding material such as solder to constitute the electronic component mounting package of the present invention. Yes. In addition to the signal line conductor 4b and the ground conductor 4d, circuit wiring may be formed on the circuit board 4 or an electronic component may be mounted depending on the intended use of the circuit board. Further, FIG. 1 shows a state in which the lid 8 is removed so that the internal structure of the electronic device can be easily understood.

本発明の電子部品搭載用パッケージは、図１〜図３に示す例のように、上面から下面にかけて貫通する貫通孔１ａを有する金属からなる基体１と、貫通孔１ａに充填された封止材２を貫通して固定された信号端子３と、基体１の上面に搭載された、絶縁基板４ａの上面から側面の途中にかけて信号線路導体４ｂが形成された回路基板４とを具備しており、絶縁基板４ａの側面に位置する信号線路導体４ｂと信号端子３の基体１の上面から突出した部分の側面とが当接して接続されていることを特徴とするものである。このような構成
であることから、信号端子３が基体１から突出した部分から回路基板４の信号線路導体４ｂまでの間にはインピーダンスが高くなるボンディングワイヤがなく、信号端子３の基体１から突出した部分は、基体１の上面に突出して信号線路導体４ｂと接続される部分においてインピーダンスが高くても、絶縁基板４ａの側面の信号線路導体４ｂとろう材等によって接続された部分においては、側面の信号線路導体４ｂの厚みが増して信号線路導体４ｂと絶縁基板４ａの下面の接地導体４ｄ（または接地導体として機能する基体１）との間の容量が増えることによってインピーダンスが低下するので、信号端子３が基体１から突出した部分から絶縁基板４ａの上面の信号線路導体４ｂまでの平均のインピーダンスは所定の値に近いものとなって伝送損失も小さくなり、高周波信号を良好に伝送させることができるようになる。 The electronic component mounting package of the present invention includes a base body 1 made of a metal having a through hole 1a penetrating from the upper surface to the lower surface, and a sealing material filled in the through hole 1a, as in the examples shown in FIGS. 2 and a circuit board 4 mounted on the upper surface of the base body 1 and having a signal line conductor 4b formed from the upper surface of the insulating substrate 4a to the middle of the side surface. The signal line conductor 4b positioned on the side surface of the insulating substrate 4a and the side surface of the portion of the signal terminal 3 protruding from the upper surface of the base 1 are in contact with each other and connected. Because of this configuration, there is no bonding wire that increases the impedance between the portion where the signal terminal 3 protrudes from the base body 1 and the signal line conductor 4b of the circuit board 4, and the signal terminal 3 protrudes from the base body 1 Even if the impedance of the portion that protrudes from the upper surface of the base 1 and is connected to the signal line conductor 4b is high, the side portion of the insulating substrate 4a that is connected to the signal line conductor 4b by the brazing material or the like Since the signal line conductor 4b increases in thickness and the capacitance between the signal line conductor 4b and the ground conductor 4d (or the base 1 functioning as the ground conductor) on the lower surface of the insulating substrate 4a increases, the impedance decreases. The average impedance from the portion where the terminal 3 protrudes from the base 1 to the signal line conductor 4b on the upper surface of the insulating substrate 4a is close to a predetermined value. It becomes small transmission loss becomes as, it is possible to satisfactorily transmit a high-frequency signal.

また、本発明の電子部品搭載用パッケージは、図４〜図６にその要部を拡大して示す例のように、上記構成において、絶縁基板４ａの側面に位置する信号線路導体４ｂに信号線路導体４ｂから幅方向に平行に延びる容量導体４ｃが形成されていることが好ましい。このような構成としたときには、容量導体４ｃの位置や大きさによって側面の信号線路導体４ｂと接地導体４ｄとの間の容量をより細かく調整することができるので、信号端子３が基体１から突出した部分から絶縁基板４ａの上面の信号線路導体４ｂまでの平均のインピーダンスを所定の値に整合させることができ、伝送損失のより小さい電子部品搭載用パッケージとなる。   In addition, the electronic component mounting package of the present invention has a signal line connected to the signal line conductor 4b located on the side surface of the insulating substrate 4a in the above-described configuration, as in the example in which the main part is enlarged and shown in FIGS. It is preferable that a capacitive conductor 4c extending in parallel with the width direction from the conductor 4b is formed. In such a configuration, the capacitance between the signal line conductor 4b on the side surface and the ground conductor 4d can be finely adjusted depending on the position and size of the capacitive conductor 4c, so that the signal terminal 3 protrudes from the base body 1. The average impedance from the portion thus formed to the signal line conductor 4b on the upper surface of the insulating substrate 4a can be matched to a predetermined value, resulting in an electronic component mounting package with a smaller transmission loss.

基体１は、上面にＬＤやＰＤ等の電子部品５や回路基板４を搭載する搭載部を有しており、図１に示す例では、円板状の基体１の上面が搭載部となる。図１に示す例では、２つの貫通孔１ａを有する基体１に１つの回路基板４を介して１個の電子部品５を搭載しているが、基体１の上に電子部品５を直接搭載したり、複数の電子部品５を搭載したりしてもよい。また、電子部品５の数や電子部品５の端子の数に応じて信号端子３を固定する貫通孔１ａを２つより多く形成しても構わない。   The base 1 has a mounting portion on which an electronic component 5 such as an LD or PD and a circuit board 4 are mounted on the upper surface. In the example shown in FIG. 1, the upper surface of the disk-shaped base 1 is the mounting portion. In the example shown in FIG. 1, one electronic component 5 is mounted on the base body 1 having two through holes 1 a via one circuit board 4, but the electronic component 5 is directly mounted on the base body 1. Or a plurality of electronic components 5 may be mounted. Further, more than two through holes 1 a for fixing the signal terminals 3 may be formed according to the number of electronic components 5 and the number of terminals of the electronic components 5.

基体１は、通常は厚みが0.5〜２ｍｍの平板状であり、その形状は特に制限はないが、
例えば直径が３〜10ｍｍの円板状，半径が1.5〜８ｍｍの円周の一部を切り取った半円板
状，一辺が３〜15ｍｍの四角板状等であり、上面から下面にかけて形成された直径が0.6
〜2.65ｍｍの貫通孔１ａを有する。基体１の厚みは0.5ｍｍ以上２ｍｍ以下が好ましい。
基体１の厚みが0.5ｍｍ未満の場合は、電子部品５を保護するための金属製の蓋体８を金
属製の基体１の上面に接合する際に、接合温度等の接合条件により基体１が曲がったりして変形し易くなる。一方、基体１の厚みが２ｍｍを超えると、電子部品搭載用パッケージや電子装置の厚みが不要に厚いものとなり、小型化し難くなる。 The substrate 1 is usually a flat plate having a thickness of 0.5 to 2 mm, and the shape is not particularly limited.
For example, a disc shape with a diameter of 3 to 10 mm, a semi-disc shape with a radius cut from 1.5 to 8 mm, a square plate shape with a side of 3 to 15 mm, etc., formed from the upper surface to the lower surface. 0.6 diameter
It has a through hole 1a of ˜2.65 mm. The thickness of the substrate 1 is preferably 0.5 mm or more and 2 mm or less.
When the thickness of the substrate 1 is less than 0.5 mm, when the metal lid 8 for protecting the electronic component 5 is bonded to the upper surface of the metal substrate 1, the substrate 1 is bonded according to bonding conditions such as a bonding temperature. It becomes easy to bend and deform. On the other hand, if the thickness of the substrate 1 exceeds 2 mm, the thickness of the electronic component mounting package or the electronic device becomes unnecessarily thick, and it is difficult to reduce the size.

基体１は、Ｆｅ−Ｎｉ−Ｃｏ合金，Ｃｕ−Ｚｎ合金，ステンレス鋼等の金属やＣｕ−Ｗ焼結材等の金属焼結材から成り、例えば金属インゴットに圧延加工や打ち抜き加工および切削加工等の従来周知の金属加工を施して、またはＭＩＭ（Metal Injection Molding）
等の方法で射出成形して、例えば、図１に示す例のような円板状の基体１を形成する。貫通孔１ａは、金属板を円板状に加工するのと同時に、あるいは円板状に加工した後に、金型による打ち抜き加工によって、またはドリル加工等の切削加工によって形成される。基体１の材質は、使用する電子部品５の熱膨張係数に近い熱膨張係数を有するものが好ましい。熱伝導性の良い金属からなり、搭載される電子部品５やセラミック製の回路基板４の熱膨張係数に近いものやコストの安いものとしては、例えば、Ｆｅ99.6質量％−Ｍｎ0.4
質量％系のＳＰＣ（Steel Plate Cold）材や、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｍｎ合金等が挙げられる。 The base 1 is made of a metal sintered material such as a metal such as Fe—Ni—Co alloy, Cu—Zn alloy, stainless steel, or a Cu—W sintered material. For example, the metal ingot is rolled, punched, and cut. Conventionally known metal processing or MIM (Metal Injection Molding)
For example, a disk-shaped substrate 1 as shown in FIG. 1 is formed by injection molding. The through-hole 1a is formed by punching with a metal mold or by cutting such as drilling at the same time that the metal plate is processed into a disk shape or after being processed into a disk shape. The substrate 1 is preferably made of a material having a thermal expansion coefficient close to that of the electronic component 5 to be used. As a thing which is made of a metal having good thermal conductivity and has a thermal expansion coefficient close to that of the electronic component 5 or ceramic circuit board 4 to be mounted or a low cost, for example, Fe99.6 mass% -Mn0.4
Examples thereof include a mass% SPC (Steel Plate Cold) material, an Fe—Ni—Co alloy, and an Fe—Mn alloy.

また、基体１の表面には、耐食性に優れ、電子部品５や回路基板４あるいは蓋体８を接合し固定するためのろう材との濡れ性に優れた、厚さが0.5〜９μｍのＮｉ層と厚さが0.5
〜５μｍのＡｕ層とをめっき法により順次被着させておくのがよい。これにより、基体１が酸化腐食するのを有効に防止できるとともに、電子部品５や回路基板４あるいは蓋体８を基体１に良好にろう付けすることができる。 Further, a Ni layer having a thickness of 0.5 to 9 μm is excellent on the surface of the base body 1 with excellent corrosion resistance and wettability with a brazing material for joining and fixing the electronic component 5, the circuit board 4 or the lid 8. And thickness is 0.5
It is preferable to sequentially deposit a ~ 5 μm Au layer by a plating method. Thereby, it is possible to effectively prevent the base body 1 from being oxidatively corroded, and to braze the electronic component 5, the circuit board 4, or the lid body 8 to the base body 1 satisfactorily.

基体１に形成された貫通孔１ａには、封止材２が充填されており、この封止材２を貫通して信号端子３が固定されている。信号端子３は、一方の端部（上端部）は基体１の上面から回路基板４の上面と同程度まで突出させて固定される。一方、信号端子３の他方の端部（下端部）は、外部電気回路（図示せず）に接続するために基体１の下面から１〜20ｍｍ程度突出しているのが好ましい。図１に示す例のように、信号端子３の上端部と電子部品５とを電気的に接続するとともに、信号端子３の下端部を外部電気回路（図示せず）に電気的に接続することによって、信号端子３は電子部品５と外部電気回路との間で高周波の入出力信号を伝送する機能を果たす。   A through hole 1 a formed in the base 1 is filled with a sealing material 2, and the signal terminal 3 is fixed through the sealing material 2. One end (upper end) of the signal terminal 3 is fixed so as to protrude from the upper surface of the base body 1 to the same level as the upper surface of the circuit board 4. On the other hand, it is preferable that the other end (lower end) of the signal terminal 3 protrudes from the lower surface of the base 1 by about 1 to 20 mm in order to connect to an external electric circuit (not shown). As in the example shown in FIG. 1, the upper end portion of the signal terminal 3 and the electronic component 5 are electrically connected, and the lower end portion of the signal terminal 3 is electrically connected to an external electric circuit (not shown). Thus, the signal terminal 3 functions to transmit high-frequency input / output signals between the electronic component 5 and the external electric circuit.

図６に示す例のように、貫通孔１ａを基体１の上面側の径が小さい形状として、径の大きい部分だけに封止材２を充填することによって、基体１の上面側にいわゆるエア同軸部を設けてもよい。このようにエア同軸部を設けて、エア同軸部のインピーダンスを、封止材２内の所定値（例えば50Ω）のインピーダンスと、信号端子３が基体１の上面から突出した部分の、所定値より高いインピーダンスとの中間の値のインピーダンスにして、インピーダンスの変化を緩やかにすることで高周波信号の伝送がより良好なものとなる。このとき、封止材２は、図６に示す例のように、基体１の貫通孔１ａの径の小さい部分の周囲の、径の大きい部分の上に重なる部分との間に隙間を設けて充填すると、封止材２内の信号端子３と基体１の貫通孔１ａの径の大きい部分の上に重なる部分との間の浮遊容量を減らすことができ、この遊容量によって封止材２内の信号端子３のインピーダンスがずれてしまうことがないのでよい。   As in the example shown in FIG. 6, the through hole 1 a has a shape with a small diameter on the upper surface side of the base body 1, and the sealing material 2 is filled only in a large diameter portion, so A part may be provided. Thus, the air coaxial portion is provided, and the impedance of the air coaxial portion is determined from the impedance of a predetermined value (for example, 50Ω) in the sealing material 2 and the predetermined value of the portion where the signal terminal 3 protrudes from the upper surface of the base 1. By setting the impedance to a value intermediate between the high impedance and gradual change of the impedance, the transmission of the high frequency signal becomes better. At this time, as shown in the example shown in FIG. 6, the sealing material 2 is provided with a gap between the portion around the small diameter portion of the through hole 1 a of the substrate 1 and the portion overlapping the large diameter portion. When filled, the stray capacitance between the signal terminal 3 in the sealing material 2 and the portion overlapping the large diameter portion of the through hole 1a of the substrate 1 can be reduced. It is sufficient that the impedance of the signal terminal 3 is not shifted.

封止材２は、ガラスやセラミックスなどの絶縁性の無機材料から成り、信号端子３と基体１との絶縁性を確保するとともに、信号端子３を基体１の貫通孔１ａ内に固定する機能を有する。このような封止材２の例としては、ホウケイ酸ガラス，ソーダガラス等のガラスおよびこれらのガラスに封止材２の熱膨張係数や比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。例えば、特性インピーダンスを50Ωとするには、貫通孔１ａの内径が1.75ｍｍで信号端子３の外径が0.2ｍｍの場合、あるいは貫通孔１ａの内径が2.2ｍｍで信号端子３の外径が0.25ｍｍの場合であれば、封止材２の比誘電率が6.8であるものを用いればよい。また、貫通
孔１ａの内径が1.65ｍｍで信号端子３の外径が0.25ｍｍの場合であれば、封止材２の比誘電率が５であるものを用いればよい。 The sealing material 2 is made of an insulating inorganic material such as glass or ceramics, and has a function of securing the insulation between the signal terminal 3 and the base 1 and fixing the signal terminal 3 in the through hole 1 a of the base 1. Have. Examples of such a sealing material 2 include glass such as borosilicate glass and soda glass, and a glass filler added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 2. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide. For example, to set the characteristic impedance to 50Ω, the inner diameter of the through hole 1a is 1.75 mm and the outer diameter of the signal terminal 3 is 0.2 mm, or the inner diameter of the through hole 1a is 2.2 mm and the outer diameter of the signal terminal 3 is 0.25. In the case of mm, the sealing material 2 having a relative dielectric constant of 6.8 may be used. Further, when the inner diameter of the through hole 1a is 1.65 mm and the outer diameter of the signal terminal 3 is 0.25 mm, the sealing material 2 having a relative dielectric constant of 5 may be used.

信号端子３を貫通孔１ａに充填された封止材２を貫通して固定するには、例えば、封止材２がガラスから成る場合は、周知の粉体プレス法や押し出し成形法を用いてガラス粉末を成形して、内径を信号端子３の外径に合わせ、外径を貫通孔１ａの内径に合わせた筒状の成形体を作製し、この封止材２の成形体を貫通孔１ａに挿入し、さらに信号端子３をこの封止材２の孔に挿通し、しかる後、所定の温度に加熱して封止材２を溶融させた後、冷却して固化させることにより行なうことができる。これにより、封止材２により貫通孔１ａが気密に封止されるとともに、封止材２によって信号端子３が基体１と絶縁されて固定され、同軸線路が形成される。   To fix the signal terminal 3 through the sealing material 2 filled in the through hole 1a, for example, when the sealing material 2 is made of glass, a known powder pressing method or extrusion molding method is used. A glass powder is molded to produce a cylindrical molded body having an inner diameter matched to the outer diameter of the signal terminal 3 and an outer diameter matched to the inner diameter of the through hole 1a. Then, the signal terminal 3 is inserted into the hole of the sealing material 2 and then heated to a predetermined temperature to melt the sealing material 2 and then cooled and solidified. it can. As a result, the through hole 1a is hermetically sealed by the sealing material 2, and the signal terminal 3 is insulated and fixed from the base body 1 by the sealing material 2, thereby forming a coaxial line.

また、封止材２は基体１を貫通する貫通孔１ａ内に充填されるが、基体１と同じ材質で形成した環状の外周導体の内側に封止材２を充填して信号端子３を固定することで同軸コネクタを作製し、この同軸コネクタをＡｕ−Ｓｎはんだ等の接合材によって基体１の貫通孔１ａ内に接合してもよい。このようにすると、低誘電率のガラスを封止材２として用い
る場合は、低誘電率のガラスは一般的に融点が高いので、低誘電率ガラスを貫通孔２ａに充填する際に基体１を高温（1000℃程度）に加熱しなければならず、このときに電子部品５や回路基板４の搭載面が変形してしまう場合があるのに対して、Ａｕ−Ｓｎはんだによる接合は350℃程度と低く、搭載面の変形が抑えられるので好ましい。 In addition, the sealing material 2 is filled in the through-hole 1a that penetrates the base 1, and the signal terminal 3 is fixed by filling the sealing material 2 inside the annular outer peripheral conductor formed of the same material as the base 1. Thus, a coaxial connector may be manufactured, and the coaxial connector may be joined into the through hole 1a of the base body 1 by a joining material such as Au—Sn solder. In this case, when glass with a low dielectric constant is used as the sealing material 2, the glass with a low dielectric constant generally has a high melting point. Therefore, when the low dielectric constant glass is filled in the through-hole 2 a, the substrate 1 is used. It must be heated to a high temperature (about 1000 ° C). At this time, the mounting surface of the electronic component 5 or the circuit board 4 may be deformed, whereas the bonding with Au-Sn solder is about 350 ° C. This is preferable because deformation of the mounting surface can be suppressed.

信号端子３は、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属から成り、例えば信号端子３がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、この合金のインゴット（塊）に圧延加工や打ち抜き加工等の金属加工方法を施すことによって、長さが1.5〜22ｍｍ、直径が0.1〜0.5ｍｍの線状に製作される。   The signal terminal 3 is made of a metal such as an Fe—Ni—Co alloy or an Fe—Ni alloy. For example, when the signal terminal 3 is made of an Fe—Ni—Co alloy, rolling or punching is performed on an ingot of the alloy. By applying a metal processing method such as processing, a wire having a length of 1.5 to 22 mm and a diameter of 0.1 to 0.5 mm is manufactured.

信号端子３の直径が0.1ｍｍより小さい場合は、信号端子３が曲がりやすいものになり
取り扱い上の少しの不注意でも信号端子３が曲がってしまいやすくなる。信号端子３が曲がってしまうと、上述したようなエア同軸部を有する場合は、この部分でのインピーダンスが狂いやすくなり、また、外部回路との接続の作業性が低下する場合がある。また信号端子３の直径が0.5ｍｍを超えると、インピーダンス整合を行うために必要な貫通孔２ａ
の径が不要に大きくなるため、電子装置が小型化し難くなるので、信号端子３の直径は0.1〜0.5ｍｍであるのが好ましい。 When the diameter of the signal terminal 3 is smaller than 0.1 mm, the signal terminal 3 is easily bent, and the signal terminal 3 is easily bent even with a little carelessness in handling. If the signal terminal 3 is bent, when the air coaxial portion as described above is provided, the impedance at this portion is likely to go wrong, and the workability of connection with an external circuit may be lowered. If the diameter of the signal terminal 3 exceeds 0.5 mm, the through hole 2a necessary for impedance matching is used.
The diameter of the signal terminal 3 is preferably 0.1 to 0.5 mm.

基体１の下面には接地端子６が接合される。接地端子６は、信号端子３と同様にして作製され、基体１の下面にロウ材等を用いて接合される。位置決めの容易性と接合強度の向上のために、予め基体１の下面に穴を形成しておき、その穴に接地端子６を挿入して接合してもよい。また、同様の理由で、基体１の下面に当接するように接地端子６に鍔をつけて、接合面積をより大きくしてもよい。このようにして基体１に接地端子６を接合することにより、接地端子６を外部電気回路に接続した際には、基体１が接地導体としても機能する。   A ground terminal 6 is joined to the lower surface of the base 1. The ground terminal 6 is manufactured in the same manner as the signal terminal 3 and bonded to the lower surface of the base 1 using a brazing material or the like. In order to facilitate positioning and improve the bonding strength, a hole may be formed in advance on the lower surface of the substrate 1, and the ground terminal 6 may be inserted into the hole for bonding. For the same reason, the grounding terminal 6 may be provided with a ridge so as to contact the lower surface of the base 1 to increase the bonding area. By joining the ground terminal 6 to the base 1 in this manner, the base 1 functions as a ground conductor when the ground terminal 6 is connected to an external electric circuit.

回路基板４は酸化アルミニウム（アルミナ：Ａｌ２Ｏ３）質焼結体，窒化アルミニウム（ＡｌＮ）質焼結体，ガラスセラミック焼結体等のセラミックスや、エポキシ，ポリイミド，テトラフルオロエチレン，液晶ポリマー等の樹脂から成る絶縁基板４ａの上面から側面の途中にかけて信号線路導体４ｂが形成されたものである。上述したように、図２〜図９に示す例では、絶縁基板４ａの下面には接地導体４ｄが形成されているが、接地導体４ｄは必ずしも必要ではない。回路基板４を導電性の接着剤等の導電性の接合材で基体１に接合する場合は、基体１を接地導体とするマイクロストリップ線路となるからである。しかしながら、図２〜図９に示す例のように、絶縁基板４ａの下面に接地導体４ｄを形成することで、はんだやろう材（図示せず）による回路基板４の基体１への接合が容易になるので好ましい。また、図４〜図９に示す例では、絶縁基板４ａの側面に位置する信号線路導体４ｂに信号線路導体４ｂから幅方向に平行に延びる容量導体４ｃが形成されている。 The circuit board 4 is made of ceramics such as aluminum oxide (alumina: Al 2 O 3 ) sintered body, aluminum nitride (AlN) sintered body, glass ceramic sintered body, epoxy, polyimide, tetrafluoroethylene, liquid crystal polymer, etc. The signal line conductor 4b is formed from the upper surface of the insulating substrate 4a made of the above resin to the middle of the side surface. As described above, in the example shown in FIGS. 2 to 9, the ground conductor 4d is formed on the lower surface of the insulating substrate 4a, but the ground conductor 4d is not necessarily required. This is because when the circuit board 4 is bonded to the substrate 1 with a conductive bonding material such as a conductive adhesive, it becomes a microstrip line using the substrate 1 as a ground conductor. However, as in the examples shown in FIGS. 2 to 9, by forming the ground conductor 4d on the lower surface of the insulating substrate 4a, it is easy to join the circuit board 4 to the base body 1 with solder or brazing material (not shown). This is preferable. In the example shown in FIGS. 4 to 9, the capacitor conductor 4c extending in parallel in the width direction from the signal line conductor 4b is formed on the signal line conductor 4b located on the side surface of the insulating substrate 4a.

絶縁基板４ａは、例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ（Ａｌ２Ｏ３）やシリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤，溶媒および有機バインダーを添加混合して泥漿状とし、これを周知のドクターブレード法やカレンダーロール法等によりシート状に成形してセラミックグリーンシート（以下、グリーンシートともいう。）を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層して積層体を作製し、これを約1600℃の温度で焼成することにより製作される。または、Ａｌ２Ｏ３，ＳｉＯ２，ＣａＯ，ＭｇＯ等の原料粉末に必要に応じて有機バインダーを加えたものを金型に充填しプレス成型することによって所定の形状に成形して、この成形体を約1600度の温度で焼成することによって製作される。 If the insulating substrate 4a is made of, for example, an aluminum oxide sintered body, it is suitable for a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO). An organic solvent, a solvent and an organic binder are added and mixed to form a slurry, which is formed into a sheet by a known doctor blade method, calendar roll method or the like to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of laminated sheets are produced as necessary to produce a laminate, which is then fired at a temperature of about 1600 ° C. Alternatively, a raw material powder such as Al 2 O 3 , SiO 2 , CaO, MgO or the like, which is added with an organic binder as necessary, is filled into a mold and press-molded to form a predetermined shape, and this molded body Is fired at a temperature of about 1600 degrees.

このときの信号線路導体４ｂ，接地導体４ｄおよび容量導体４ｃは、タングステン（Ｗ
），モリブデン（Ｍｏ），マンガン（Ｍｎ）等の高融点金属粉末に適当な有機バインダーや溶剤を添加混合してペースト状にした金属ペーストを、従来周知のスクリーン印刷法により、セラミックグリーンシートまたはその積層体、あるいはセラミックスの成形体に所定形状に印刷塗布しておき、これらと同時焼成することにより形成される。絶縁基板４ａを作製した後に、絶縁基板４ａ上に同様の金属ペーストを印刷塗布して焼成することにより、メタライズ層を焼き付けてもよい。この場合は、信号線路導体４ｂ，接地導体４ｄおよび容量導体４ｃの露出する表面には、厚さが0.5〜９μｍのＮｉ層と厚さが0.5〜５μｍのＡｕ層とをめっき法により順次被着させておくのがよい。これにより、これら配線が酸化腐食するのを有効に防止できるとともに、電子部品５とのワイヤボンディング性、回路基板４の基体１へのろう付け性および信号線路導体４ｂと信号端子３とのろう付け性を良好なものすることができる。 At this time, the signal line conductor 4b, the ground conductor 4d, and the capacitive conductor 4c are made of tungsten (W
), Molybdenum (Mo), manganese (Mn), and other high melting point metal powders, an appropriate organic binder or solvent is added and mixed to form a paste into a ceramic green sheet or its It is formed by printing and applying in a predetermined shape to a laminate or a ceramic molded body, and simultaneously firing them. After producing the insulating substrate 4a, the metallized layer may be baked by printing and applying the same metal paste onto the insulating substrate 4a and baking it. In this case, a Ni layer having a thickness of 0.5 to 9 μm and an Au layer having a thickness of 0.5 to 5 μm are sequentially deposited by plating on the exposed surfaces of the signal line conductor 4b, the ground conductor 4d and the capacitor conductor 4c. It is good to leave it. As a result, it is possible to effectively prevent these wires from being oxidatively corroded, wire bonding with the electronic component 5, brazing to the substrate 1 of the circuit board 4, and brazing between the signal line conductor 4b and the signal terminal 3. The property can be improved.

絶縁基板４ａの厚みが薄い場合は、金属ペーストを塗布することによって絶縁基板４ａの上面から側面の途中にかけて信号線路導体４ｂを形成するのが困難である。このような場合には、上記の製造方法において、金属ペーストの塗布に先立ってセラミックグリーンシートに金型等で貫通孔を形成して貫通孔を金属ペーストで充填しておき、この貫通孔と重なるように信号線路導体４ｂのパターン形状に金属ペーストを印刷塗布し、その下に貫通孔を形成していないセラミックグリーンシートを積層し、貫通孔を縦方向に分断するように積層体を切断して焼成することで側面の信号線路導体４ｂを形成してもよい。絶縁基板４ａの上面から下面の途中まで貫通導体が形成され、この貫通導体が縦方向に切断されて側面に露出した部分が信号線路導体４ｂとなる。貫通孔を形成するセラミックグリーンシートの数を変えたり、厚みを変えたりすることによって、側面の信号線路導体４ｂの長さを変えることができる。グリーンシート積層体の段階で切断せずに、焼成後に貫通導体を縦方向に分断するように絶縁基板１ａを切断してもよい。   When the thickness of the insulating substrate 4a is thin, it is difficult to form the signal line conductor 4b from the upper surface of the insulating substrate 4a to the middle of the side surface by applying a metal paste. In such a case, in the above manufacturing method, prior to the application of the metal paste, a through hole is formed in the ceramic green sheet with a mold or the like, and the through hole is filled with the metal paste, and overlaps with the through hole. In this way, a metal paste is printed and applied to the pattern shape of the signal line conductor 4b, a ceramic green sheet without a through hole is laminated thereunder, and the laminate is cut so as to divide the through hole in the vertical direction. The signal line conductor 4b on the side surface may be formed by firing. A through conductor is formed from the upper surface to the lower surface of the insulating substrate 4a, and a portion of the through conductor that is cut in the vertical direction and exposed to the side surface becomes the signal line conductor 4b. The length of the signal line conductor 4b on the side surface can be changed by changing the number of ceramic green sheets forming the through holes or changing the thickness. Instead of cutting at the stage of the green sheet laminate, the insulating substrate 1a may be cut so that the through conductors are cut in the vertical direction after firing.

この方法では、側面の信号線路導体４ｂの厚みを、貫通孔の横断面形状によって厚くすることができるので、側面の信号線路導体４ｂと接地導体４ｄとの間の容量を大きくすることができる。   In this method, since the thickness of the side signal line conductor 4b can be increased by the cross-sectional shape of the through hole, the capacitance between the side signal line conductor 4b and the ground conductor 4d can be increased.

また、貫通孔を金属ペーストで充填せずに、貫通孔の内面に金属ペーストを塗布して貫通導体を形成してもよい。このようにすると、側面の信号線路導体４ｂの表面は凹面になる（表面に凹部が形成される）ので、信号端子３と側面の信号線路導体４ｂとをろう材で接続する際に、この凹部にろう材が溜まりやすくなって、ろう付けの作業性が向上するとともに接続信頼性が向上するのでよい。   Alternatively, the through conductor may be formed by applying the metal paste to the inner surface of the through hole without filling the through hole with the metal paste. In this case, the surface of the signal line conductor 4b on the side surface is concave (a concave portion is formed on the surface). Therefore, when the signal terminal 3 and the signal line conductor 4b on the side surface are connected with the brazing material, the concave portion is formed. The brazing material tends to accumulate, so that the workability of brazing is improved and the connection reliability is improved.

この側面の信号線路導体４ｂの形成方法において、図４（ｂ）に示す例のような容量導体４ｃを形成するには、貫通導体の絶縁基板４ａの側面に露出する部分の幅を信号線路導体４ｂの幅より大きくしておけばよい。図５（ｂ）に示す例のような、下面側より上面側の方が幅広の容量導体４ｃを形成するには、３層以上のグリーンシートを積層して積層体を作製し、上の２層に貫通孔を形成して、上側の貫通孔の幅を下側の貫通孔の幅より大きくし、図７に示す例のような、下側より上側の方が幅の大きい貫通導体を形成すればよい。さらに、図６（ｂ）に示す例のような、上面から下面側にかけて漸次幅が狭くなるような形状の容量導体４ｃを形成するには、グリーンシートに貫通孔を形成する際のメス金型をオス金型に比べて通常より大きくしたものを用いると、グリーンシートのメス金型側の主面の方が径の大きい貫通孔を形成することができるので、貫通孔の径の大きい方を上にして積層体を形成すればよい。このようにすると、図８に示す例のような、下側より上側の方が径が大きく、縦断面形状が逆台形状である貫通導体を形成することができる。   In this method of forming the signal line conductor 4b on the side surface, in order to form the capacitive conductor 4c as in the example shown in FIG. 4B, the width of the portion of the through conductor exposed on the side surface of the insulating substrate 4a is set to the signal line conductor. It may be larger than the width of 4b. In order to form a capacitor conductor 4c having a wider upper surface side than the lower surface side as in the example shown in FIG. 5B, a laminate is produced by laminating three or more green sheets. By forming a through hole in the layer, the width of the upper through hole is made larger than the width of the lower through hole, and a through conductor having a larger width on the upper side than the lower side is formed as in the example shown in FIG. do it. Furthermore, in order to form the capacitor conductor 4c having a shape in which the width gradually decreases from the upper surface to the lower surface side as in the example shown in FIG. 6B, a female die for forming a through hole in the green sheet is used. If the one that is larger than usual compared to the male mold is used, the main surface on the female mold side of the green sheet can form a through hole with a larger diameter. A laminated body may be formed with the top. In this way, a through conductor having a larger diameter on the upper side than the lower side and an inverted trapezoidal shape can be formed as in the example shown in FIG.

また、信号線路導体４ｂ，接地導体４ｄおよび容量導体４ｃを形成する方法としては、絶縁基板４ａを作製した後に蒸着法やフォトリソグラフィ法により形成する方法がある。
電子装置の小型化を進め、狭い面積に多数の配線を形成するためには、蒸着法やフォトリソグラフィ法により形成する方法が好ましい。この場合は、信号線路導体４ｂ，接地導体４ｄおよび容量導体４ｃの形成前に、必要に応じて絶縁基板４ａの主面に研磨加工を施す場合もある。 Further, as a method of forming the signal line conductor 4b, the ground conductor 4d, and the capacitive conductor 4c, there is a method of forming the insulating substrate 4a after forming the insulating substrate 4a by a vapor deposition method or a photolithography method.
In order to reduce the size of the electronic device and form a large number of wirings in a small area, a method of forming by an evaporation method or a photolithography method is preferable. In this case, before the formation of the signal line conductor 4b, the ground conductor 4d, and the capacitive conductor 4c, the main surface of the insulating substrate 4a may be polished as necessary.

以下、信号線路導体４ｂ，接地導体４ｄおよび容量導体４ｃとなる配線導体を蒸着法やフォトリソグラフィ法により形成する場合について詳細に説明する。配線導体は、例えば密着金属層，拡散防止層および主導体層が順次積層された３層構造の導体層から成る。   Hereinafter, the case where the wiring conductors to be the signal line conductor 4b, the ground conductor 4d, and the capacitive conductor 4c are formed by vapor deposition or photolithography will be described in detail. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated.

密着金属層は、セラミックス等から成る絶縁基板４ａとの密着性を良好とするという観点からは、チタン（Ｔｉ），クロム（Ｃｒ），タンタル（Ｔａ），ニオブ（Ｎｂ），ニッケル−クロム（Ｎｉ−Ｃｒ）合金，窒化タンタル（Ｔａ２Ｎ）等の熱膨張率がセラミックスと近い金属のうちの少なくとも１種より成るのが好ましく、その厚みは0.01〜0.2μｍ
程度が好ましい。密着金属層の厚みが0.01μｍ未満では、密着金属層を絶縁基板４ａに強固に密着させることが困難となる傾向がある。一方、密着金属層の厚みが0.2μｍを超え
ると、成膜時の内部応力によって密着金属層が絶縁基板４ａから剥離し易くなる傾向がある。 From the viewpoint of improving the adhesion with the insulating substrate 4a made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni -Cr) alloy, tantalum nitride (Ta 2 N), or the like, preferably made of at least one kind of metal having a thermal expansion coefficient close to that of ceramics, and its thickness is 0.01 to 0.2 μm.
The degree is preferred. If the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the insulating substrate 4a. On the other hand, if the thickness of the adhesion metal layer exceeds 0.2 μm, the adhesion metal layer tends to be peeled off from the insulating substrate 4a due to internal stress during film formation.

拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金（Ｐｔ），パラジウム（Ｐｄ），ロジウム（Ｒｈ），ニッケル（Ｎｉ），Ｎｉ−Ｃｒ合金，Ｔｉ−Ｗ合金等の熱伝導性の良好な金属のうち少なくとも１種より成ることが好ましく、その厚みは0.05〜１μｍ程度が好ましい。拡散防止層の厚みが0.05μｍ未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向があり、１μｍを超えると、成膜時の内部応力により拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にＮｉ−Ｃｒ合金を用いる場合は、Ｎｉ−Ｃｒ合金は絶縁基板４ａとの密着性が良好なため、密着金属層を省くことも可能である。   From the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer, the diffusion prevention layer is platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, Ti— It is preferably made of at least one metal having good thermal conductivity such as W alloy, and the thickness is preferably about 0.05 to 1 μm. If the thickness of the diffusion prevention layer is less than 0.05 μm, defects such as pinholes tend to be generated, making it difficult to perform the function as the diffusion prevention layer. If the thickness exceeds 1 μm, the diffusion prevention layer is caused by internal stress during film formation. There is a tendency to easily peel from the adhesion metal layer. When a Ni—Cr alloy is used for the diffusion prevention layer, the Ni—Cr alloy has good adhesion to the insulating substrate 4a, so that the adhesion metal layer can be omitted.

主導体層は、電気抵抗の小さい金（Ａｕ），Ｃｕ，Ｎｉ，銀（Ａｇ）の少なくとも１種より成ることが好ましく、その厚みは0.1〜５μｍ程度が好ましい。主導体層の厚みが0.1μｍ未満では、電気抵抗が大きなものとなって回路基板の信号線路導体４ｂおよび接地導体４ｄとなる配線導体に要求される電気抵抗を満足できなくなる傾向があり、５μｍを超えると、成膜時の内部応力により主導体層が拡散防止層から剥離し易く成る傾向がある。また、Ｃｕは酸化し易いので、その上にＮｉおよびＡｕからなる保護層を被覆してもよい。   The main conductor layer is preferably made of at least one of gold (Au), Cu, Ni, and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance becomes large, and there is a tendency that the electric resistance required for the wiring conductor to be the signal line conductor 4b and the ground conductor 4d of the circuit board cannot be satisfied. If it exceeds, the main conductor layer tends to be easily peeled off from the diffusion preventing layer due to internal stress during film formation. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

回路基板４の信号線路導体４ｂの特性インピーダンスを50Ωとするには、マイクロストリップ構造の回路基板４の場合であれば、誘電率9.5である96％酸化アルミニウム質焼結
体からなり、厚みが0.3ｍｍである絶縁基板４ａの下面に接地導体４ｄを形成し、上面の
信号線路導体４ｂを、幅が0.3ｍｍで厚みが４μｍのものとすればよく、絶縁基板４ａが
同じ材料からなり、厚みが0.5ｍｍである場合には、信号線路導体４ｂを厚みが４μｍで
幅が0.5ｍｍのものとすればよい。 In order to set the characteristic impedance of the signal line conductor 4b of the circuit board 4 to 50Ω, in the case of the circuit board 4 having a microstrip structure, the circuit board 4 is made of a 96% aluminum oxide sintered body having a dielectric constant of 9.5 and has a thickness of 0.3. The grounding conductor 4d is formed on the lower surface of the insulating substrate 4a which is mm, and the signal line conductor 4b on the upper surface may be 0.3 mm wide and 4 μm thick. The insulating substrate 4a is made of the same material and has a thickness of In the case of 0.5 mm, the signal line conductor 4b may have a thickness of 4 μm and a width of 0.5 mm.

容量導体４ｃは、図５〜図８に示す例のように、絶縁基板４ａの上面側の方が幅広であると、インピーダンスの変化が緩やかになって高周波信号の伝送がより良好なものとなる。さらには、図６および図８に示す例のように、容量導体４ｃの幅の変化が緩やかであると、インピーダンスの変化がより緩やかになって高周波信号の伝送がさらに良好なものとなる。   If the upper surface side of the insulating substrate 4a is wider as in the examples shown in FIGS. 5 to 8, the impedance of the capacitive conductor 4c becomes gentle and the transmission of high-frequency signals becomes better. . Furthermore, as in the examples shown in FIGS. 6 and 8, when the change in the width of the capacitive conductor 4c is gradual, the change in impedance becomes more gradual and the transmission of high-frequency signals becomes even better.

また、図９（ａ）に示す例のように、少なくとも絶縁基板４ａの側面の信号線路導体４ｂが形成された部分を上面側が内側に傾斜した傾斜面とした場合も、側面の信号線路導体
４にろう材を加えた厚みが絶縁基板４ａの上面側にいくに従って厚くなるのに伴って容量も大きくなるので、インピーダンスの変化が緩やかになって高周波信号の伝送が良好なものとなる。 Further, as in the example shown in FIG. 9A, the signal line conductor 4 on the side surface is also provided when at least the portion where the signal line conductor 4 b on the side surface of the insulating substrate 4 a is formed as an inclined surface whose upper surface side is inclined inward. As the thickness of the brazing material increases toward the upper surface side of the insulating substrate 4a, the capacity increases, so that the impedance change becomes gradual and the transmission of the high-frequency signal becomes good.

接地導体４ｄは、絶縁基板２ａの下面のほぼ全面に形成されるが、信号端子３との短絡を防止するために、信号線路導体４ｂが形成される側面より少し内側まで形成される。信号端子３との間の絶縁性を確保するためには、側面からの距離（図３に示すｄ１）は0.1
ｍｍ程度以上とするのがよい。さらには、図４，図５および図７〜図９に示す例では、上面視して貫通孔１ａと重なる部分には接地導体４ｄを形成していない。このようにすると、貫通孔１ａ内の信号端子３ａと貫通孔１ａに重なる位置にある接地導体４ｄとの間の浮遊容量によって、貫通孔１ａ内の信号端子３のインピーダンスがずれてしまうことがないのでよい。 The ground conductor 4d is formed on substantially the entire lower surface of the insulating substrate 2a, but is formed slightly inside the side surface on which the signal line conductor 4b is formed in order to prevent a short circuit with the signal terminal 3. In order to ensure insulation between the signal terminal 3 and the distance from the side surface (d1 shown in FIG. 3) is 0.1.
It is good to set it as about mm or more. Furthermore, in the examples shown in FIGS. 4, 5, and 7 to 9, the ground conductor 4 d is not formed in a portion overlapping the through hole 1 a when viewed from above. In this way, the impedance of the signal terminal 3 in the through hole 1a is not shifted due to the stray capacitance between the signal terminal 3a in the through hole 1a and the ground conductor 4d in a position overlapping the through hole 1a. So good.

回路基板１は、導電性接着剤，はんだ、ろう材等の接合材で基体１の上面に固定される。上述したように、絶縁基板４ａの下面に接地導体４ｄを形成すると、はんだやろう材による回路基板４の基体１への接合が容易になるので好ましい。   The circuit board 1 is fixed to the upper surface of the substrate 1 with a bonding material such as a conductive adhesive, solder, or brazing material. As described above, it is preferable to form the ground conductor 4d on the lower surface of the insulating substrate 4a because it is easy to join the circuit board 4 to the base body 1 with solder or brazing material.

信号端子３と回路基板４の側面の信号線路導体４ｂとの接続は、はんだや導電性の接着剤等の導電性の接合材を用いて行なえばよい。絶縁基板４ａの側面に位置する信号線路導体４ｂと信号端子３の基体１の上面から突出した部分の側面とは当接して接続されるが、信号端子３と信号線路導体４ｂとの間に介在する接合材の厚みが100μｍ程度以下のもの
は当接しているとみなす。 The connection between the signal terminal 3 and the signal line conductor 4b on the side surface of the circuit board 4 may be made using a conductive bonding material such as solder or a conductive adhesive. The signal line conductor 4b located on the side surface of the insulating substrate 4a and the side surface of the portion of the signal terminal 3 protruding from the upper surface of the base 1 are in contact with each other, but are interposed between the signal terminal 3 and the signal line conductor 4b. A bonding material having a thickness of about 100 μm or less is considered to be in contact.

ここで、信号端子３の基体１からの突出部と回路基板４の側面の信号線路導体４ｂとの接続部分での特性インピーダンスは、以下のようになる。例えば、信号端子３の径が0.25ｍｍで、封止材２の誘電率が５である場合に、貫通孔１ａの径を1.65ｍｍとすることで、信号端子３の貫通孔１ａ内に位置する部分の特性インピーダンスは50Ωとなる。また、絶縁基板４ａの厚みを0.25ｍｍとし、その上面に幅0.25ｍｍで、厚みが４μｍの信号線路導体４ｂを形成し、上面と同じ幅で側面に位置する信号線路導体４ｂの長さ（図４に示すＬ）を0.125ｍｍとすると、上面視して、接地導体４ｄと重なる部分における信号線路導体
４ｂの特性インピーダンスは50Ωとなる。 Here, the characteristic impedance at the connecting portion between the protruding portion of the signal terminal 3 from the base 1 and the signal line conductor 4b on the side surface of the circuit board 4 is as follows. For example, when the diameter of the signal terminal 3 is 0.25 mm and the dielectric constant of the sealing material 2 is 5, the diameter of the through hole 1a is 1.65 mm so that the signal terminal 3 is positioned in the through hole 1a. The characteristic impedance of the part is 50Ω. Further, the thickness of the insulating substrate 4a is 0.25 mm, the signal line conductor 4b having a width of 0.25 mm and a thickness of 4 μm is formed on the upper surface thereof, and the length of the signal line conductor 4b positioned on the side surface with the same width as the upper surface (see FIG. If L) shown in FIG. 4 is 0.125 mm, the characteristic impedance of the signal line conductor 4b in the portion overlapping the ground conductor 4d when viewed from above is 50Ω.

また、図４に示す例のように、側面の信号線路導体４ｂの長さと同じ長さの容量導体４ｃを信号線路導体４ｂの両側に形成してその幅をＷ（片側の幅は図４に示すＷ／２）とし、回路基板４を基体１にろう接した場合の絶縁基体４ａと基体１との距離（接地導体４ｄの厚みにろう材の厚みを加えたもの）をｄ２とし、信号端子３と絶縁基体４ａの側面との距離（側面の信号線路導体４ｂの厚みに信号端子３と信号線路導体４ｂとの間に介在するろう材の厚みを加えたもの）をｄ３とした場合の、信号端子３の基体１から突出して絶縁基板４ａの下面までの間の部位の特性インピーダンス（Ｚ１）、信号端子３の絶縁基板４ａの下面から側面の信号線路導体４ｂと接続するまでの間の部位の特性インピーダンス（Ｚ２）、信号端子３の側面の信号線路導体４ｂとが接続している部位の特性インピーダンス（Ｚ３）および上面視して接地導体４ｄが形成されていない部位の信号線路導体４ｂの特性インピーダンス（Ｚ４）の概略を計算すると以下のようになる。   Further, as in the example shown in FIG. 4, a capacitor conductor 4c having the same length as that of the signal line conductor 4b on the side surface is formed on both sides of the signal line conductor 4b, and its width is W (the width on one side is shown in FIG. W / 2), the distance between the insulating substrate 4a and the substrate 1 when the circuit board 4 is brazed to the substrate 1 (the thickness of the ground conductor 4d plus the thickness of the brazing material) is d2, and the signal terminal 3 and the side surface of the insulating base 4a (thickness of the signal line conductor 4b on the side surface plus the thickness of the brazing material interposed between the signal terminal 3 and the signal line conductor 4b) is d3. The characteristic impedance (Z1) of the portion between the signal terminal 3 protruding from the base 1 and the lower surface of the insulating substrate 4a, and the portion between the lower surface of the insulating substrate 4a of the signal terminal 3 and the connection to the signal line conductor 4b on the side surface Characteristic impedance (Z2) of the signal terminal 3 side signal An outline of the characteristic impedance (Z3) of the part where the line conductor 4b is connected and the characteristic impedance (Z4) of the part of the signal line conductor 4b where the ground conductor 4d is not formed when viewed from above is calculated as follows. Become.

ｄ１＝0.15ｍｍ、Ｗ＝０（容量導体４ｃがない場合）、ｄ２＝0.05ｍｍ、ｄ３＝0.05ｍｍである場合は、Ｚ１＝85Ω、Ｚ２＝43Ω、Ｚ３＝40Ω、Ｚ４＝50Ω程度となり、信号端子３の基体１から突出した部分から信号線路導体４ｂの上面視で接地導体４ｄと重ならない部位までの平均のインピーダンスはほぼ50Ωとなる。   When d1 = 0.15 mm, W = 0 (when there is no capacitive conductor 4c), d2 = 0.05 mm, d3 = 0.05 mm, Z1 = 85Ω, Z2 = 43Ω, Z3 = 40Ω, Z4 = 50Ω, The average impedance from the portion of the terminal 3 protruding from the base 1 to the portion not overlapping with the ground conductor 4d in the top view of the signal line conductor 4b is approximately 50Ω.

また、ｄ１＝0.20ｍｍ、Ｗ＝1.4ｍｍ、ｄ２＝0.05ｍｍ、ｄ３＝0.05ｍｍである場合は
、Ｚ１＝95Ω、Ｚ２＝46Ω、Ｚ３＝14Ω、Ｚ４＝51Ω程度となり、同様に平均のインピーダンスはほぼ50Ωとなる。 When d1 = 0.20mm, W = 1.4mm, d2 = 0.05mm, d3 = 0.05mm, Z1 = 95Ω, Z2 = 46Ω, Z3 = 14Ω, Z4 = 51Ω, and the average impedance is similarly Nearly 50Ω.

本発明の電子装置は、上記各構成の本発明の電子部品搭載用パッケージに電子部品５が搭載されていることを特徴とするものである。電子部品搭載用パッケージが伝送損失の小さいものであることから、高周波信号の伝送特性の良好が良好で、高速で動作可能な電子装置となる。   The electronic device of the present invention is characterized in that the electronic component 5 is mounted on the electronic component mounting package of the present invention having the above-described configuration. Since the electronic component mounting package has a small transmission loss, a high-frequency signal transmission characteristic is good and the electronic device can operate at high speed.

図１に示す例では、基体１の上面に搭載された回路基板４の上に電子部品５が搭載され、電子部品５と信号端子３とは回路基板４を介して電気的に接続されている。具体的には、回路基板４上の電子部品５の電極と回路基板４の上面に形成された信号線路導体４ｂとがボンディングワイヤ７によって電気的に接続され、回路基板４の側面に位置する信号線路導体４ｂと信号端子３とがろう材等の導電性接合材で電気的に接続される。電子部品５を基体１の上面に直接搭載して、電子部品５の電極と回路基板４の信号線路導体４ｂとをボンディングワイヤ７によって電気的に接続してもよい。   In the example shown in FIG. 1, an electronic component 5 is mounted on a circuit board 4 mounted on the upper surface of the base 1, and the electronic component 5 and the signal terminal 3 are electrically connected via the circuit board 4. . Specifically, the electrode of the electronic component 5 on the circuit board 4 and the signal line conductor 4 b formed on the upper surface of the circuit board 4 are electrically connected by the bonding wire 7, and the signal positioned on the side surface of the circuit board 4. The line conductor 4b and the signal terminal 3 are electrically connected by a conductive bonding material such as a brazing material. The electronic component 5 may be directly mounted on the upper surface of the base 1, and the electrode of the electronic component 5 and the signal line conductor 4 b of the circuit board 4 may be electrically connected by the bonding wire 7.

電子部品５は、ＩＣ（Integrated circuit），ＬＳＩ（Large Scale Integrated circuit），ＬＤ（Laser Diode），ＰＤ（Photo Diode）、ＬＮ（Lithium Nitride）変調器等
であり、基体１あるいは回路基板１への搭載は、ＡｇろうやＡｇ−Ｃｕろう等のろう材，Ａｕ−ＳｎはんだやＰｂ−Ｓｎはんだ等のはんだ，エポキシ樹脂等の接着剤により基体１の上面に強固に接着固定することによって行なう。 The electronic component 5 is an IC (Integrated Circuit), an LSI (Large Scale Integrated circuit), an LD (Laser Diode), a PD (Photo Diode), an LN (Lithium Nitride) modulator, and the like. Mounting is performed by firmly bonding and fixing to the upper surface of the substrate 1 with a brazing material such as Ag brazing or Ag-Cu brazing, solder such as Au-Sn solder or Pb-Sn solder, or an adhesive such as epoxy resin.

そして、電子部品５を電子部品搭載用パッケージに搭載した後に、搭載された電子部品５を覆って気密に封止するために、蓋体８を基体１に接合する。蓋体８は、基体１の上面の外周部にろう付け法やシームウエルド法等の溶接法によって接合される。   Then, after the electronic component 5 is mounted on the electronic component mounting package, the lid body 8 is joined to the base body 1 in order to cover the mounted electronic component 5 and hermetically seal it. The lid 8 is joined to the outer peripheral portion of the upper surface of the base 1 by a welding method such as a brazing method or a seam weld method.

蓋体８は、Ｆｅ−Ｎｉ−Ｃｏ合金やＣｕ−Ｗの焼結材等の金属や酸化アルミニウム質焼結体，窒化アルミニウム質焼結体等のセラミックスから成る、板状のものである。また、蓋体８がセラミックスから成る場合は、下面の周縁部に厚膜法や薄膜法で金属接合層を形成しておくことにより、ろう材による接合が可能となる。   The lid 8 is a plate-shaped member made of a metal such as an Fe—Ni—Co alloy or Cu—W sintered material, or a ceramic such as an aluminum oxide sintered body or an aluminum nitride sintered body. Further, when the lid body 8 is made of ceramics, bonding with a brazing material is possible by forming a metal bonding layer on the peripheral edge of the lower surface by a thick film method or a thin film method.

なお、本発明は上述の実施の形態および実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を行なうことは何等差し支えない。   The present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the scope of the present invention.

例えば、以上の例では、図１に示す例のような円形の金属ステムを用いた電子部品搭載用パッケージを例として説明したが、本発明の電子部品搭載用パッケージは図10に示す例のような、箱型の電子部品搭載用パッケージでも構わない。図10（ａ）は本発明の電子部品搭載用パッケージを外部回路基板に搭載した例を示す斜視図であり、図10（ｂ）は図10（ａ）のＡ−Ａ線における断面を示す断面図である。また、図11（ａ）は図10（ｂ）のＡ部を拡大して示す断面図であり、図11（ｂ）は図11（ａ）のＡ−Ａ線における断面図である。図10および図11における、９は外部回路基板、９ａは外部回路基板９の絶縁基板、９ｂは外部回路基板９の信号配線導体、９ｃは外部回路基板９の接地配線導体、９ｄは外部回路基板９の絶縁基板を貫通して上下面の接地配線導体９ｃを接続するためのビア導体を示し、その他の各符号は、図１〜図９と同様の部位を示す。   For example, in the above example, the electronic component mounting package using the circular metal stem as in the example shown in FIG. 1 has been described as an example. However, the electronic component mounting package of the present invention is similar to the example shown in FIG. It may be a box-type electronic component mounting package. FIG. 10 (a) is a perspective view showing an example in which the electronic component mounting package of the present invention is mounted on an external circuit board, and FIG. 10 (b) is a cross-sectional view taken along line AA of FIG. 10 (a). FIG. FIG. 11A is an enlarged cross-sectional view showing a portion A of FIG. 10B, and FIG. 11B is a cross-sectional view taken along the line AA of FIG. 11A. 10 and 11, 9 is an external circuit board, 9a is an insulating board of the external circuit board 9, 9b is a signal wiring conductor of the external circuit board 9, 9c is a ground wiring conductor of the external circuit board 9, and 9d is an external circuit board. 9 show via conductors for connecting the upper and lower ground wiring conductors 9c through the insulating substrate 9, and the other reference numerals denote the same parts as in FIGS.

図10および図11に示す例の電子部品搭載用パッケージは、箱型の基体１の底板の上面（底面）に貫通孔１ａが設けられている。回路基板４は基体１の底面上に搭載され、信号端子３は貫通孔１ａ内に封止材２によって固定されている。そして、この信号端子３と配線基板４の一方主面上の信号線路導体４ａとがろう材５によって電気的に接続されている。   In the example of the electronic component mounting package shown in FIGS. 10 and 11, a through hole 1a is provided on the upper surface (bottom surface) of the bottom plate of the box-shaped substrate 1. FIG. The circuit board 4 is mounted on the bottom surface of the base 1, and the signal terminal 3 is fixed in the through hole 1 a by the sealing material 2. The signal terminal 3 and the signal line conductor 4 a on one main surface of the wiring board 4 are electrically connected by a brazing material 5.

この例の場合は、信号端子３の基体1の下面から突出した部分は折り曲げられており、
折り曲げられて外部回路基板９の上面と平行になった部分が信号配線導体９ｂにろう材等で接合されている。信号端子３を折り曲げずに、外部回路基板９の絶縁基板９ａに形成した孔に挿入するようにしてもよい。このときの孔の内面には導体が形成され、信号配線導体９ｂに接続される。 In this example, the portion of the signal terminal 3 protruding from the lower surface of the base 1 is bent,
A portion that is bent and parallel to the upper surface of the external circuit board 9 is joined to the signal wiring conductor 9b by a brazing material or the like. The signal terminal 3 may be inserted into a hole formed in the insulating substrate 9a of the external circuit board 9 without being bent. At this time, a conductor is formed on the inner surface of the hole and connected to the signal wiring conductor 9b.

接地端子６は、２本で信号端子２を挟むようにして基体１に接続されており、外部回路基板の信号配線導体９ｂの両側に配置された接地配線導体９ｃにろう材等で接合されている。   The two ground terminals 6 are connected to the base 1 so as to sandwich the signal terminal 2 therebetween, and are joined to the ground wiring conductors 9c arranged on both sides of the signal wiring conductor 9b of the external circuit board by a brazing material or the like.

また、図10および図11に示す例では、基体１に信号端子３の外部回路基板９の上面と平行になった部分と一定の間隔を持つような切欠きを形成して、信号端子３の上面をエア同軸構造とし、信号端子３が接続される信号配線導体９ｂをマイクロストリップライン構造としていることから、容易にインピーダンスを整合させて表面実装できるようになっており、高価なコネクタを使用しないで大出力の高周波を伝送できる。また、小さく曲げ難いコネクタを使用しないことによって外部回路基板９を小型化することもできる。   In the example shown in FIGS. 10 and 11, the base 1 is formed with a notch having a certain distance from the portion of the signal terminal 3 parallel to the upper surface of the external circuit board 9. Since the upper surface has an air coaxial structure and the signal wiring conductor 9b to which the signal terminal 3 is connected has a microstrip line structure, it can be easily surface-mounted with matching impedance, and an expensive connector is not used. Can transmit high power and high frequency. Further, the external circuit board 9 can be reduced in size by not using a small and difficult-to-bend connector.

図10および図11に示す例の場合の基体１は、上記同様の金属のインゴットを圧延加工，打ち抜き加工，切削加工など周知の金属加工法を用いて作製した枠体を銀ろう等の接合材で平板（底板）に接合することによって形成される。また、例えばＭＩＭ法等によって枠部を平板と一体的に形成して基体１を作製してもよい。   The base 1 in the example shown in FIG. 10 and FIG. 11 is a joining material such as silver brazing made of a frame made of a metal ingot similar to the above using a known metal processing method such as rolling, punching or cutting. It is formed by joining to a flat plate (bottom plate). Further, the base body 1 may be manufactured by forming the frame portion integrally with the flat plate by, for example, the MIM method.

図10および図11に示す例の場合の配線基板４は、図１〜図９に示す例の配線基板４と同様にして作製されるが、配線基板４の一方の主面には電子部品５は搭載されないので信号線路導体４ａのみが形成され、この信号線路導体４ｂと他方の主面側の接地導体４ｄとでマイクロストリップ線路を構成している。   The wiring board 4 in the case of the example shown in FIGS. 10 and 11 is manufactured in the same manner as the wiring board 4 in the example shown in FIGS. 1 to 9, but the electronic component 5 is formed on one main surface of the wiring board 4. Therefore, only the signal line conductor 4a is formed, and the signal line conductor 4b and the ground conductor 4d on the other main surface side constitute a microstrip line.

基体１の底面上に電子部品５を搭載し、電子部品５の端子と配線基板４の信号線路導体４ｂとをボンディングワイヤ７で接続するとともに、枠部の上面に蓋体８を接合することにより、本発明の電子装置となる。この例では電子部品５は基体１に直接搭載されているが、これは電子部品５で発生した熱を金属製の基体１を通して外部へ放熱するためである。電子部品５の発熱が大きい場合は、電子部品５と基体１との間にペルチェ素子等を搭載して、電子部品５を冷却するようにしてもよい。   The electronic component 5 is mounted on the bottom surface of the base 1, the terminals of the electronic component 5 and the signal line conductor 4 b of the wiring substrate 4 are connected by the bonding wires 7, and the lid body 8 is bonded to the upper surface of the frame portion. The electronic device of the present invention is obtained. In this example, the electronic component 5 is directly mounted on the base 1, which is to radiate the heat generated in the electronic component 5 to the outside through the metallic base 1. If the electronic component 5 generates a large amount of heat, a Peltier element or the like may be mounted between the electronic component 5 and the base 1 to cool the electronic component 5.

また、例えば、以上の例では、回路基板４の信号線路導体４ｂはマイクロストリップ構造である場合について説明を行なったが、信号線路導体４ｂの両側に間隔を設けて接地導体４ｄを配置したコプレナー構造や、信号線路導体４ｂの両側と絶縁基板４ａの一方の主面とに接地導体４ｄを配置して上下の接地導体４ｄをビア導体で接続したグラウンド付コプレナー構造としてもよい。   Further, for example, in the above example, the case where the signal line conductor 4b of the circuit board 4 has a microstrip structure has been described. However, a coplanar structure in which the ground conductor 4d is disposed on both sides of the signal line conductor 4b with a space therebetween. Alternatively, a grounded coplanar structure in which ground conductors 4d are arranged on both sides of the signal line conductor 4b and one main surface of the insulating substrate 4a and the upper and lower ground conductors 4d are connected by via conductors may be employed.

１・・・・・・・基体
１ａ・・・・・・貫通孔
２・・・・・・・封止材
３・・・・・・・信号端子
４・・・・・・・回路基板
４ａ・・・・・・絶縁基板
４ｂ・・・・・・信号配線導体
４ｃ・・・・・・容量導体
４ｄ・・・・・・接地導体
５・・・・・・・電子部品
６・・・・・・・接地端子
７・・・・・・・ボンディングワイヤ
８・・・・・・・蓋体
９・・・・・・・外部回路基板
９ａ・・・・・・絶縁基板
９ｂ・・・・・・信号線路導体
９ｃ・・・・・・接地配線導体
９ｄ・・・・・・ビア導体 DESCRIPTION OF SYMBOLS 1 ...... Base 1a ..... Through-hole 2 ..... Sealing material 3 ....... Signal terminal 4 ..... Circuit board 4a・ ・ ・ ・ ・ ・ Insulating substrate 4b ・ ・ ・ ・ ・ ・ Signal wiring conductor 4c ・ ・ ・ ・ ・ ・ Capacitance conductor 4d ・ ・ ・ ・ ・ ・ Grounding conductor 5 ・ ・ ・ ・ ・ ・ ・ ・ Electronic components 6 ・ ・ ・······ grounding terminal 7 ········ bonding wire 8 ······························································ ... Signal line conductor 9c ... Ground wiring conductor 9d ... Via conductor

Claims (3)

上面から下面にかけて貫通する貫通孔を有する金属からなる基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子と、前記基体の上面に搭載された、絶縁基板の上面から側面の途中にかけて信号線路導体が形成された回路基板とを具備しており、前記絶縁基板の側面に位置する前記信号線路導体と前記信号端子の前記基体の上面から突出した部分の側面とが当接して接続されていることを特徴とする電子部品搭載用パッケージ。 A base made of a metal having a through hole penetrating from the upper surface to the lower surface, a signal terminal fixed through the sealing material filled in the through hole, and an upper surface of the insulating substrate mounted on the upper surface of the base And a circuit board on which signal line conductors are formed in the middle of the side surface, and the signal line conductor located on the side surface of the insulating substrate and the side surface of the portion of the signal terminal protruding from the top surface of the base body An electronic component mounting package characterized by being connected in contact with each other. 前記絶縁基板の側面に位置する前記信号線路導体に前記信号線路導体から幅方向に平行に延びる容量導体が形成されていることを特徴とする請求項１記載の電子部品搭載用パッケージ。 2. The electronic component mounting package according to claim 1, wherein a capacitor conductor extending in parallel with the width direction from the signal line conductor is formed on the signal line conductor located on a side surface of the insulating substrate. 請求項１または請求項２に記載の電子部品搭載用パッケージに電子部品が搭載されていることを特徴とする電子装置。 An electronic device in which an electronic component is mounted on the electronic component mounting package according to claim 1.
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