JP2009054982A - Package for mounting electronic component, and electronic equipment using the same - Google Patents

Package for mounting electronic component, and electronic equipment using the same Download PDF

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JP2009054982A
JP2009054982A JP2008007623A JP2008007623A JP2009054982A JP 2009054982 A JP2009054982 A JP 2009054982A JP 2008007623 A JP2008007623 A JP 2008007623A JP 2008007623 A JP2008007623 A JP 2008007623A JP 2009054982 A JP2009054982 A JP 2009054982A
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electronic component
hole
signal terminal
base body
base
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Masahiko Taniguchi
雅彦 谷口
Sadakatsu Yoshida
定功 吉田
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for mounting electronic components and electronic equipment, capable of preventing air-tightness failures when through-holes for fixing signal pins are made greater to increase the characteristic impedance. <P>SOLUTION: In a package for mounting electronic components including a joint portion 1b having an upper peripheral area to which a lid 6 is welded or brazed, a base body 1 having a portion 1a to mount electronic components 5 and a plurality of through-holes 1c passing from its top to the bottom, and signal pins 3a passing through the sealing material 2 filled in the through-holes 1c and fixed thereto, the through-holes 1c pass through the base body 1 at a slant so that their openings on the top of the base body position closer to the center of the base body 1 than the openings on the bottom of the base body 1. Since the through-holes 1c are away from the joint portion 1b on the top of the base body 1, it is possible to suppress generation of cracks and separation of the sealing material 2 and assure air-tightness of the package. Consequently, high reliable electronic equipment can be obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、光通信分野等に用いられる光半導体素子等の電子部品を収納するための電子部品搭載用パッケージおよびそれを用いた電子装置に関する。   The present invention relates to an electronic component mounting package for storing electronic components such as optical semiconductor elements used in the field of optical communication and the like, and an electronic apparatus using the same.

近年、40ｋｍ以下の伝送距離における高速通信に対する需要が急激に増加しており、高速大容量の情報伝送に関する研究開発が進められている。とりわけ、光通信装置を用いて光信号を受発信する半導体装置等の電子装置の高速化が注目されており、電子装置による光信号の高出力化と高速化が伝送容量を向上させるための課題として研究開発されている。   In recent years, the demand for high-speed communication at a transmission distance of 40 km or less has increased rapidly, and research and development on high-speed and large-capacity information transmission has been promoted. In particular, increasing speed of electronic devices such as semiconductor devices that receive and transmit optical signals using optical communication devices has been attracting attention, and the issue of increasing the output and speed of optical signals by electronic devices to improve transmission capacity As research and development.

従来の半導体装置に代表される電子装置の光出力は0.2〜0.5ｍＷ程度であり、電子部品として用いられる半導体素子の駆動電力は５ｍＷ程度であった。しかし、より大出力の半導体装置では、光出力が１ｍＷのレベルになってきており、また、半導体素子の駆動電力も10ｍＷ以上が要求されている。さらに、従来の半導体装置による伝送速度は2.5〜10Ｇｂｐｓ程度であったが、近年では25〜40Ｇｂｐｓ程度まで向上してきており、半導体装置をより高出力化させ、高速化させることが要求されている。   The optical output of an electronic device typified by a conventional semiconductor device is about 0.2 to 0.5 mW, and the driving power of a semiconductor element used as an electronic component is about 5 mW. However, in a semiconductor device having a higher output, the optical output has become a level of 1 mW, and the driving power of the semiconductor element is required to be 10 mW or more. Furthermore, although the transmission speed of the conventional semiconductor device is about 2.5 to 10 Gbps, it has been improved to about 25 to 40 Gbps in recent years, and it is required to increase the output of the semiconductor device and increase the speed.

光通信装置に用いられているＬＤ（Laser Diode:レーザダイオード）やＰＤ（Photo Diode:フォトダイオ−ド）等の光半導体素子を含む電子部品を従来の電子部品搭載用パッケージに搭載した電子装置の断面図を図12に示す。   An electronic device in which an electronic component including an optical semiconductor element such as an LD (Laser Diode) or PD (Photo Diode) used in an optical communication device is mounted on a conventional electronic component mounting package. A cross-sectional view is shown in FIG.

従来の電子部品搭載用パッケージは、円板状の金属製の基体11に、基体11の上面から下面にかけて貫通する貫通孔11ｃを設け、この貫通孔11ｃに充填された絶縁性ガラスから成る封止材12を貫通して信号端子13が固定されているものである。また、基体11の下面には、２つの貫通孔11ｃ・11ｃの間に接地端子14が接続されている。この電子部品搭載用パッケージの上面に電子部品15を搭載し、電子部品搭載用パッケージの信号端子13の上端部と電子部品15の端子とをボンディングワイヤ17を介して電気的に接続し、基体11の上面の外周領域に、電子部品15を覆うように金属製の蓋体16を溶接またはろう接により接合部11ｂに接合して気密封止することにより電子装置としていた。また、蓋体16の電子部品15と対向する部分に光ファイバを固定したり、電子部品15と対向する部分に光を透過させる窓を設けたりしたものもある（例えば、特許文献１，特許文献２を参照。）。   In a conventional electronic component mounting package, a disk-shaped metal base 11 is provided with a through-hole 11c penetrating from the upper surface to the lower surface of the base 11, and is sealed with insulating glass filled in the through-hole 11c. The signal terminal 13 is fixed through the material 12. A ground terminal 14 is connected to the lower surface of the base 11 between the two through holes 11c and 11c. The electronic component 15 is mounted on the upper surface of the electronic component mounting package, and the upper end portion of the signal terminal 13 of the electronic component mounting package and the terminal of the electronic component 15 are electrically connected via the bonding wire 17 to form the base body 11. In the outer peripheral area of the upper surface, an electronic device is obtained by joining a metal lid 16 to the joint 11b by welding or brazing so as to cover the electronic component 15 and hermetically sealing. In addition, there is a case in which an optical fiber is fixed to a portion of the lid 16 facing the electronic component 15 or a window for transmitting light is provided in a portion facing the electronic component 15 (for example, Patent Document 1, Patent Document). 2).

また、伝送速度が2.5Ｇｂｐｓ以下の場合は、周辺部品のインピーダンスは25Ωで形成されていたが、高周波化が進むにつれ、周辺部品のインピーダンスが50Ωで形成されるようになっている。ここで、高周波の通る信号端子13のインピーダンスを50Ωにマッチングさせようとすると、貫通孔11ｃの径が、インピーダンスを従来の25Ωで設計した場合に対してほぼ２倍となることがわかっている。そして、貫通孔11ｃの径が大きくなった場合に、貫通孔11ｃ内の信号端子13を電子部品15が搭載された側へ偏心させて固定し、ボンディングワイヤ17の長さを減少させることで伝送損失を少なくすることが行なわれている（例えば、特許文献３を参照。）。
特開2006−179775号公報 特開平８−130266号公報 特開平５−343117号公報 Further, when the transmission speed is 2.5 Gbps or less, the impedance of the peripheral component is 25Ω, but as the frequency increases, the impedance of the peripheral component is 50Ω. Here, it is known that if the impedance of the signal terminal 13 through which the high frequency passes is matched with 50Ω, the diameter of the through hole 11c is almost twice that when the impedance is designed with the conventional 25Ω. When the diameter of the through hole 11c increases, the signal terminal 13 in the through hole 11c is eccentrically fixed to the side on which the electronic component 15 is mounted, and the length of the bonding wire 17 is reduced. The loss is reduced (see, for example, Patent Document 3).
JP 2006-179775 A JP-A-8-130266 JP-A-5-343117

しかしながら、25ＧＨｚ以上の高周波信号で駆動される電子部品15を搭載し、インピーダンスを50Ωにマッチングさせるために、信号端子13の通る貫通孔11ｃの径を大きくすると、蓋体16をＹＡＧレーザ溶接，シーム溶接またはロウ付け等の溶接で気密封着した場合に、気密不良が発生しやすくなるという問題点があった。   However, when the electronic component 15 driven by a high frequency signal of 25 GHz or more is mounted and the diameter of the through hole 11c through which the signal terminal 13 passes is increased in order to match the impedance to 50Ω, the lid 16 is welded by YAG laser welding and seam. There has been a problem in that a hermetic defect is likely to occur when hermetically sealed by welding such as welding or brazing.

これは、貫通孔11ｃの径が大きくなることで蓋体16の接合部と貫通孔11ｃとの距離が近付いたので、例えばシーム溶接の場合は主に機械的衝撃が、ろう付けの場合は基体11と蓋体16との熱膨張係数の差による熱応力が接合部11ｂに加わり、これが貫通孔11ｃへ伝わることにより、貫通孔11ｃ内の封止材12にクラックが発生したり、貫通孔11ｃの内壁と封止材12との間や信号端子13と封止材12との間に剥がれが発生してしまうためであると考えられる。また、シーム溶接やＹＡＧレーザ溶接の場合は急激に高温に加熱され、接合部11ｂから貫通孔11ｃまでの距離が短いとその間で熱が拡散しないので貫通孔11ｃの内面もすぐに高温になるのに対して、金属製の基体11に対して熱伝導率の小さいガラス製の封止材12は温度が上昇するのに時間がかかり、両者の間で熱膨張差が生じて貫通孔11ｃの内壁と封止材12との間や信号端子13と封止材12との間に剥がれが発生してしまうと考えられる。   This is because, as the diameter of the through-hole 11c is increased, the distance between the joint portion of the lid 16 and the through-hole 11c is reduced. For example, in the case of seam welding, a mechanical impact is mainly produced. The thermal stress due to the difference in thermal expansion coefficient between the cover 11 and the cover body 16 is applied to the joint 11b, which is transmitted to the through hole 11c, thereby causing cracks in the sealing material 12 in the through hole 11c, or the through hole 11c. This is presumably because peeling occurs between the inner wall and the sealing material 12 or between the signal terminal 13 and the sealing material 12. In addition, in the case of seam welding or YAG laser welding, if the distance from the joint 11b to the through hole 11c is short, the heat does not diffuse between them, so the inner surface of the through hole 11c also quickly becomes high. On the other hand, the glass sealing material 12 having a low thermal conductivity with respect to the metal base 11 takes time for the temperature to rise, and a difference in thermal expansion occurs between them, so that the inner wall of the through hole 11c It is considered that peeling occurs between the signal terminal 13 and the sealing material 12 or between the signal terminal 13 and the sealing material 12.

また、接合部11ｂから離すために貫通孔11ｃを基体11の中心側に設けようとすると、２つの貫通孔11ｃ・11ｃの間に接地端子14を設けることができなくなったり位置をずらして設けたりしなければならず、また外部回路と接続される信号端子13・13の下端の間隔が小さくなってしまい、外部回路との接続性が低下してしまうものであった。逆に基体11を大きくして接合部11ｂを貫通孔11ｃ・11ｃから離すと、電子部品搭載用パッケージおよび電子装置が大型化してしまい、小型化した電子機器に使用することができなくなってしまう。   Further, if the through hole 11c is provided on the center side of the base 11 so as to be separated from the joint portion 11b, the ground terminal 14 cannot be provided between the two through holes 11c and 11c, or the position is shifted. In addition, the distance between the lower ends of the signal terminals 13 and 13 connected to the external circuit is reduced, and the connectivity with the external circuit is reduced. On the other hand, if the base 11 is enlarged and the joint portion 11b is separated from the through holes 11c and 11c, the electronic component mounting package and the electronic device are increased in size, and cannot be used for the downsized electronic apparatus.

従って、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、特性インピーダンスを大きくして高周波信号を伝送するために信号端子を固定する貫通孔を大きくしても、気密不良が発生しない電子部品搭載用パッケージおよびそれを用いた電子装置を提供すること。   Therefore, the present invention has been completed in view of the above-described conventional problems, and the purpose thereof is to increase the characteristic impedance and increase the through hole for fixing the signal terminal in order to transmit a high frequency signal. To provide an electronic component mounting package that does not cause airtight defects and an electronic device using the same.

本発明の電子部品搭載用パッケージは、上面の外周領域に蓋体を溶接またはろう接により接合する接合部およびその内側に電子部品の搭載部を有するとともに上面から下面にかけて複数の貫通孔を有する基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子とを具備した電子部品搭載用パッケージであって、前記貫通孔は、前記基体の上面側の開口が前記基体の下面側の開口より前記基体の中心側に位置するように前記基体を斜めに貫通していることを特徴とするものである。   The electronic component mounting package according to the present invention has a joint portion for joining a lid body by welding or brazing to the outer peripheral region of the upper surface, and a substrate having a plurality of through holes from the upper surface to the lower surface while having a mounting portion for the electronic component inside thereof. And an electronic component mounting package comprising a signal terminal that is fixed through the sealing material filled in the through hole, and the through hole has an opening on the upper surface side of the base body. The substrate is obliquely penetrated so as to be positioned closer to the center of the substrate than the opening on the lower surface side.

また、本発明の電子部品搭載用パッケージは、上記構成において、前記信号端子は、前記貫通孔の中心を通っていることを特徴とするものである。   The electronic component mounting package according to the present invention is characterized in that, in the above configuration, the signal terminal passes through the center of the through hole.

また、本発明の電子部品搭載用パッケージは、上記各構成において、前記搭載部は、前記基体の上面から突出した突出部の側面に搭載面を有するとともに、前記信号端子の前記上面から突出した端部は前記搭載面に沿っていることを特徴とするものである。   In the electronic component mounting package of the present invention, in each of the above-described configurations, the mounting portion has a mounting surface on a side surface of the protruding portion protruding from the upper surface of the base, and an end protruding from the upper surface of the signal terminal. The part is along the mounting surface.

また、本発明の電子部品搭載用パッケージは、上記各構成において、前記貫通孔は、前記基体の下面から上面にかけて内径が小さくなっていることを特徴とするものである。   The electronic component mounting package of the present invention is characterized in that, in each of the above-described configurations, the through hole has an inner diameter that decreases from the lower surface to the upper surface of the base.

また、本発明の電子部品搭載用パッケージは、上記各構成において、前記信号端子は、前記貫通孔内において前記基体の下面から上面にかけて径が小さくなっていることを特徴とするものである。   The electronic component mounting package of the present invention is characterized in that, in each of the above-described configurations, the signal terminal has a diameter that decreases from the lower surface to the upper surface of the base in the through hole.

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記基体の前記接合部に蓋体を接合したことを特徴とするものである。   An electronic device according to the present invention is characterized in that an electronic component is mounted on the mounting portion of the electronic component mounting package according to any one of the above-described configurations, and a lid is bonded to the bonding portion of the base. Is.

本発明の電子部品搭載用パッケージは、貫通孔が基体の上面側の開口が基体の下面側の開口より基体の中心側に位置するように基体を斜めに貫通していることから、貫通孔の径を大きくしても、基体の上面では貫通孔は蓋体の接合部から離れているので、蓋体を基体の上面の外周部に溶接またはろう接により接合したとしても、接合時の衝撃や接合後の熱応力が基体の接合部と貫通孔との間の部分によって緩和され、また、この部分により接合部で発生した熱が拡散し、貫通孔内の封止材にクラックが入ったり封止材と信号端子や貫通孔の内壁面との間で剥がれが生じたりすることがなく、気密性が損なわれることのない高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   In the electronic component mounting package of the present invention, the through hole penetrates the substrate obliquely so that the opening on the upper surface side of the substrate is positioned closer to the center side of the substrate than the opening on the lower surface side of the substrate. Even if the diameter is increased, the through hole is separated from the joint portion of the lid on the upper surface of the base body. Therefore, even if the lid body is joined to the outer peripheral portion of the top surface of the base body by welding or brazing, The thermal stress after joining is relieved by the part between the joint part of the substrate and the through hole, and the heat generated in the joint part is diffused by this part, and the sealing material in the through hole is cracked or sealed. It is an electronic component mounting package that does not cause peeling between the stopper and the inner wall surface of the signal terminal or the through-hole, and can provide a highly reliable electronic device that does not impair hermeticity. .

また、本発明の電子部品搭載用パッケージによれば、上記構成において、信号端子が貫通孔の中心を通っている場合には、基体の下面から上面にかけての全ての領域で信号端子と貫通孔の内壁面との距離が同じになるので、この領域においてインピーダンスの変動がなく一定となり、伝送損失が少なくより高周波信号の通過特性が良好なものとなる。   Further, according to the electronic component mounting package of the present invention, in the above configuration, when the signal terminal passes through the center of the through hole, the signal terminal and the through hole are formed in all regions from the lower surface to the upper surface of the substrate. Since the distance to the inner wall surface is the same, the impedance does not fluctuate in this region and is constant, and the transmission loss of the high frequency signal is better with less transmission loss.

また、本発明の電子部品搭載用パッケージによれば、上記各構成において、搭載部が基体の上面から突出した突出部の側面に搭載面を有するとともに、信号端子の上面から突出した端部が搭載面に沿っている場合には、信号端子の端部が搭載部に搭載された電子部品や電子部品が搭載された回路基板の主面に沿うこととなり、ろう接による信号端子の端部と電子部品の電極や回路基板の主面上の配線との接続を行なうのが容易となるので、信号端子の端部と電子部品や回路基板の主面上の配線との接続をワイヤボンディング等で行なう場合に比較して、信号線路と接地面である搭載面との間の浮遊容量を小さくすることができるので、より電気特性に優れた電子部品搭載用パッケージとなる。   According to the electronic component mounting package of the present invention, in each of the above configurations, the mounting portion has a mounting surface on the side surface of the protruding portion protruding from the upper surface of the base body, and the end portion protruding from the upper surface of the signal terminal is mounted. If it is along the surface, the end of the signal terminal is along the main surface of the electronic component mounted on the mounting part or the circuit board on which the electronic component is mounted. Since it is easy to connect to the electrode of the component and the wiring on the main surface of the circuit board, the end of the signal terminal and the wiring on the main surface of the electronic component or circuit board are connected by wire bonding or the like. Compared to the case, the stray capacitance between the signal line and the mounting surface, which is the ground plane, can be reduced, so that an electronic component mounting package with more excellent electrical characteristics can be obtained.

また、本発明の電子部品搭載用パッケージによれば、上記各構成において、貫通孔が基体の下面から上面にかけて内径が小さくなっている場合には、基体の上面で貫通孔を蓋体の接合部からより離すことができるので、接合時の衝撃や接合後の熱応力がより緩和され、また、接合部で発生した熱がより拡散しやすくなり、より高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。また、基体の上面における蓋体の接合部から貫通孔までの距離が、貫通孔の内径が基体の上面側と下面側とで等しい（一定である）場合と同じであるときには、基体の上面および下面に対する貫通孔の傾きが小さくなることから、貫通孔に充填された封止材を貫通して固定された信号端子の屈曲する角度が小さくなるので、高周波信号の損失がより小さい電子部品搭載用パッケージとなる。   According to the electronic component mounting package of the present invention, in each of the above-described configurations, when the through hole has a small inner diameter from the bottom surface to the top surface of the base, the through hole is connected to the joint portion of the lid on the top surface of the base. Can be further separated from each other, so that the impact at the time of joining and the thermal stress after joining are further relaxed, and the heat generated at the joined part is more easily diffused, and a highly reliable electronic device can be obtained. It becomes a package for mounting electronic components. Further, when the distance from the joint portion of the lid on the upper surface of the substrate to the through hole is the same as when the inner diameter of the through hole is the same (constant) on the upper surface side and the lower surface side of the substrate, Since the inclination of the through-hole with respect to the lower surface is reduced, the bending angle of the signal terminal fixed through the sealing material filled in the through-hole is reduced, so that the loss of high-frequency signals is smaller. It becomes a package.

また、本発明の電子部品搭載用パッケージによれば、上記各構成において、信号端子が貫通孔内において基体の下面から上面にかけて径が小さくなっている場合には、基体の上面側の内径を小さくした場合であっても、貫通孔内の信号端子の特性インピーダンスを容易に整合させることができる。貫通孔の内径を基体の下面から上面にかけて小さくした場合は、信号端子の径が一定であると、貫通孔の上部において信号端子と貫通孔の内面との距離が小さくなるので特性インピーダンスが小さくなってしまうが、信号端子の径が下面から上面にかけて小さくなっていると、貫通孔の内径とともに信号端子の径も小さくなっているので、貫通孔の上部における特性インピーダンスが小さくならず、特性インピーダンスを整合させることができる。また、貫通孔の上部における特性インピーダンスが小さくなった分、基体の下面側の内径を大きくして貫通孔の下部における特性インピーダンスを大きくすることにより、貫通孔内における平均の特性インピーダンスを所定の値に整合させてもよい。この場合は、信号端子の径が下面から上面にかけて小さくなっていると、基体の上面側の内径をより小さくすることができるので、基体の上面で蓋体の接合部から貫通孔までの距離をより大きくしたり、信号端子の屈曲角度をより小さくしたりすることができる。あるいは、貫通孔の上部における特性インピーダンスの低下が抑えられるので、貫通孔内における平均の特性インピーダンスを整合させるために基体の下面側の内径をあまり大きくする必要がなく、２つの貫通孔の間に接地端子を設けるスペースを確保することができる。また、貫通孔の内径が基体の上下面で同じ場合には、貫通孔内における平均の特性インピーダンスを所定の値に整合させるために貫通孔の内径をより小さくすると、基体の上面で蓋体の接合部から貫通孔までの距離をより大きくすることができる。   According to the electronic component mounting package of the present invention, in each of the above configurations, when the diameter of the signal terminal decreases from the lower surface to the upper surface of the substrate in the through hole, the inner diameter on the upper surface side of the substrate is decreased. Even in this case, the characteristic impedance of the signal terminal in the through hole can be easily matched. When the inner diameter of the through hole is reduced from the lower surface to the upper surface of the substrate, if the diameter of the signal terminal is constant, the distance between the signal terminal and the inner surface of the through hole becomes smaller at the upper portion of the through hole, so that the characteristic impedance is reduced. However, if the diameter of the signal terminal is reduced from the lower surface to the upper surface, the diameter of the signal terminal is reduced together with the inner diameter of the through hole. Can be matched. In addition, by reducing the characteristic impedance at the upper part of the through hole, the average characteristic impedance in the through hole is set to a predetermined value by increasing the inner diameter on the lower surface side of the substrate and increasing the characteristic impedance at the lower part of the through hole. May be matched. In this case, if the diameter of the signal terminal is reduced from the lower surface to the upper surface, the inner diameter on the upper surface side of the base can be made smaller, so the distance from the joint portion of the lid to the through hole on the upper surface of the base is increased. The signal terminal can be made larger or the bending angle of the signal terminal can be made smaller. Alternatively, since the decrease in the characteristic impedance at the upper part of the through hole is suppressed, it is not necessary to make the inner diameter on the lower surface side of the substrate too large in order to match the average characteristic impedance in the through hole, and between the two through holes. Space for providing the ground terminal can be secured. In addition, when the inner diameter of the through hole is the same on the upper and lower surfaces of the base, if the inner diameter of the through hole is made smaller in order to match the average characteristic impedance in the through hole to a predetermined value, The distance from the joint portion to the through hole can be further increased.

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの搭載部に電子部品を搭載するとともに、基体の接合部に蓋体を接合したことから、貫通孔の径が大きい場合であっても、基体の上面では貫通孔が蓋体の接合部から離れていることにより、蓋体を基板の上面の外周部に溶接またはろう接により接合したときの衝撃や接合後の熱応力により気密性が損なわれることのないので、気密性に優れた高信頼性の電子装置となる。   Since the electronic device according to the present invention has the electronic component mounted on the mounting portion of the electronic component mounting package according to any one of the above-described configurations, and the lid is bonded to the bonding portion of the base, the diameter of the through hole is reduced. Even if it is large, the through-hole is separated from the joint of the lid on the upper surface of the base, so that when the lid is joined to the outer periphery of the upper surface of the substrate by welding or brazing, Since airtightness is not impaired by thermal stress, a highly reliable electronic device with excellent airtightness is obtained.

本発明の電子部品搭載用パッケージおよびそれを用いた電子装置について、添付の図面を参照しつつ詳細に説明する。   An electronic component mounting package and an electronic apparatus using the same according to the present invention will be described in detail with reference to the accompanying drawings.

図１および図３は本発明の電子搭載用パッケージの実施の形態の一例を示す斜視図であり、図２および図４はそれぞれ図１および図３におけるＡ−Ａ線で切断した断面の一例を示す断面図であり、また、図５は図４におけるＢ−Ｂ線で切断した断面の一例を示す断面図である。   1 and 3 are perspective views showing an example of an embodiment of an electronic mounting package according to the present invention, and FIGS. 2 and 4 are examples of cross sections taken along line AA in FIGS. 1 and 3, respectively. FIG. 5 is a cross-sectional view showing an example of a cross section taken along line BB in FIG.

図１〜図４において、１は基体、１ａは搭載部、１ｂは接合部、１ｃは貫通孔、２は封止材、３は信号端子、４は接地端子、５は電子部品、５ａは電子部品を搭載する回路基板、６は蓋体、７はボンディングワイヤ、８は接合材である。   1 to 4, 1 is a base, 1a is a mounting portion, 1b is a joint portion, 1c is a through hole, 2 is a sealing material, 3 is a signal terminal, 4 is a ground terminal, 5 is an electronic component, and 5a is an electronic component. A circuit board on which components are mounted, 6 is a lid, 7 is a bonding wire, and 8 is a bonding material.

図１に示す例では基体１の上面に直接電子部品５が搭載されてボンディングワイヤ７で信号端子３・３の上端部と電子部品５とが接続されている。また、図３に示す例では基体１の上面から突出した突出部を搭載部として、その側面に回路基板５ａを介して電子部品５が搭載され、電子部品５はボンディングワイヤ７で回路基板５ａ上の配線に接続され、さらに信号端子３・３の端部と回路基板５ａ上の配線とはろう材等の接合材８で接続されている。さらに、図２、図４および図５に示すように、破線で示すような蓋体６を接合部１ｂに接合することにより、本発明の電子装置が基本的に構成される。   In the example shown in FIG. 1, the electronic component 5 is mounted directly on the upper surface of the substrate 1, and the upper ends of the signal terminals 3 and 3 are connected to the electronic component 5 by bonding wires 7. Further, in the example shown in FIG. 3, the protruding part protruding from the upper surface of the base 1 is used as a mounting part, and the electronic component 5 is mounted on the side surface via the circuit board 5 a, and the electronic component 5 is bonded to the circuit board 5 a by the bonding wire 7. Further, the ends of the signal terminals 3 and 3 and the wiring on the circuit board 5a are connected by a bonding material 8 such as a brazing material. Further, as shown in FIGS. 2, 4, and 5, the electronic device of the present invention is basically configured by joining a lid 6 as shown by a broken line to a joint 1b.

本発明の電子部品搭載用パッケージは、上面の外周領域に蓋体６を溶接またはろう接により接合する接合部１ｂおよびその内側に電子部品５の搭載部１ａを有するとともに上面から下面にかけて複数の貫通孔１ｃ・１ｃを有する基体１と、貫通孔１ｃに充填された封止材２を貫通して固定された信号端子３とを具備した電子部品搭載用パッケージであって、貫通孔１ｃは基体１の上面側の開口が基体１の下面側の開口より基体１の中心側に位置するように基体１を斜めに貫通していることを特徴とするものである。   The electronic component mounting package of the present invention has a joint portion 1b for joining the lid 6 to the outer peripheral region of the upper surface by welding or brazing and a mounting portion 1a for the electronic component 5 inside thereof, and a plurality of penetrations from the upper surface to the lower surface. An electronic component mounting package including a base body 1 having holes 1c and 1c and a signal terminal 3 fixed through a sealing material 2 filled in the through-hole 1c. The through-hole 1c is a base body 1 The substrate 1 is obliquely penetrated so that the opening on the upper surface side is positioned closer to the center side of the substrate 1 than the opening on the lower surface side of the substrate 1.

このことから、貫通孔１ｃ・１ｃの径を大きくしても、基体１の上面では貫通孔１ｃは蓋体６の接合部１ｂから離れているので、蓋体６を基体１の上面の外周部の接合部１ｂに溶接またはろう接により接合したとしても、接合時の衝撃や接合後の熱応力が基体１の接合部１ｂと貫通孔１ｃとの間の部分によって緩和され、また、この部分により接合部１ｂで発生した熱が拡散し、貫通孔１ｃ内の封止材２にクラックが入ったり封止材２と信号端子３や貫通孔１ｃの内壁面との間で剥がれが生じたりすることがなく、気密性が損なわれることのない高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   Therefore, even if the diameters of the through holes 1c and 1c are increased, the through hole 1c is separated from the joint portion 1b of the lid body 6 on the upper surface of the base body 1. Even if it is joined to the joint portion 1b by welding or brazing, the impact at the time of joining and the thermal stress after joining are alleviated by the portion between the joint portion 1b and the through hole 1c of the base 1, and this portion also The heat generated at the joint 1b is diffused, and the sealing material 2 in the through hole 1c is cracked or peeled off between the sealing material 2 and the signal terminal 3 or the inner wall surface of the through hole 1c. Therefore, the electronic component mounting package can provide a highly reliable electronic device that does not impair airtightness.

また、図１〜図５に示す例のように、本発明の電子部品搭載用パッケージは、上記構成において、信号端子３は貫通孔１ｃの中心を通っていることが好ましい。このことにより、基体１の下面から上面にかけての全ての領域で信号端子３と貫通孔１ｃの内壁面との距離が同じになるので、この領域においてインピーダンスの変動がなく一定となり、伝送損失が少なく高周波信号の通過特性がより良好なものとなる。   Moreover, as in the example shown in FIGS. 1 to 5, in the electronic component mounting package of the present invention, in the above configuration, the signal terminal 3 preferably passes through the center of the through hole 1 c. As a result, the distance between the signal terminal 3 and the inner wall surface of the through-hole 1c is the same in all regions from the lower surface to the upper surface of the substrate 1, so that there is no fluctuation in impedance in this region and transmission loss is small. A high-frequency signal has better pass characteristics.

図６は本発明の電子部品搭載用パッケージの一例を示す断面図であり、図７は図６におけるＢ−Ｂ線で切断した断面の一例を示す断面図である。図６に示す例は、図３に示す例が回路基板５ａの主面上の配線の延びる方向に合わせて基体１の上面から突出した信号端子３の端部が基体１の上面に対してほぼ垂直になるように基体１の上面付近で屈曲しているのに対して、図６に示す例は、信号端子３の端部は基体１の上面付近では屈曲せず、貫通孔１ｃと平行に延びて基体１の上面から突出している例である。   FIG. 6 is a cross-sectional view showing an example of an electronic component mounting package of the present invention, and FIG. 7 is a cross-sectional view showing an example of a cross section taken along line BB in FIG. In the example shown in FIG. 6, the end of the signal terminal 3 protruding from the upper surface of the base 1 in accordance with the extending direction of the wiring on the main surface of the circuit board 5 a in the example shown in FIG. In the example shown in FIG. 6, the end of the signal terminal 3 is not bent near the top surface of the base body 1 and is parallel to the through hole 1c. It is an example that extends and protrudes from the upper surface of the substrate 1.

また、本発明の電子部品搭載用パッケージは、図５および図７に示す例のように、上記構成において、搭載部１ａは、基体１の上面から突出した突出部の側面に搭載面を有するとともに、信号端子３の上面から突出した端部は搭載面に沿っていることが好ましい。これにより、信号端子３の端部が搭載部１ａに搭載された電子部品５や電子部品５が搭載された回路基板５ａの主面に沿うこととなり、ろう接による信号端子３の端部と電子部品５の電極や回路基板５ａの主面上の配線との接続を行なうのが容易となるので、信号端子３の端部と電子部品５や回路基板５ａの主面上の配線との接続をワイヤボンディング等で行なう場合に比較して、信号線路と接地面である搭載面との間の浮遊容量を小さくすることができるものとなり、より電気特性に優れた電子部品搭載用パッケージとなる。   Further, in the electronic component mounting package of the present invention, as in the example shown in FIGS. 5 and 7, in the above configuration, the mounting portion 1 a has a mounting surface on the side surface of the protruding portion protruding from the upper surface of the base 1. The end protruding from the upper surface of the signal terminal 3 is preferably along the mounting surface. As a result, the end of the signal terminal 3 extends along the main surface of the electronic component 5 mounted on the mounting portion 1a or the circuit board 5a on which the electronic component 5 is mounted. Since it becomes easy to connect the electrode of the component 5 and the wiring on the main surface of the circuit board 5a, the end of the signal terminal 3 and the wiring on the main surface of the electronic component 5 or the circuit board 5a are connected. As compared with the case where wire bonding or the like is performed, the stray capacitance between the signal line and the mounting surface which is the ground surface can be reduced, and the electronic component mounting package having more excellent electrical characteristics can be obtained.

図５および図７で示す例では、２つの信号端子３・３の基体１の上面から突出した端部を結ぶ線が搭載部１ａの搭載面に平行で、貫通孔１ｃ・１ｃの傾斜する方向（２つの貫通孔１ｃ・１ｃで傾斜する方向は反対向きである）も搭載部１ａの搭載面にほぼ平行となるように形成することで、信号端子３の上面から突出した端部が搭載面に沿うようにしている。   In the example shown in FIG. 5 and FIG. 7, the line connecting the ends protruding from the upper surface of the base body 1 of the two signal terminals 3 and 3 is parallel to the mounting surface of the mounting portion 1a, and the through holes 1c and 1c are inclined. (The direction in which the two through holes 1c and 1c are inclined is opposite) is formed so as to be substantially parallel to the mounting surface of the mounting portion 1a, so that the end protruding from the upper surface of the signal terminal 3 is mounted on the mounting surface. To be along.

図８は、本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。図８に示す例のように、貫通孔１ｃ・１ｃの傾斜する方向が搭載部１ａの搭載面に対して大きい角度をなす場合は、図８に示す例のように、基体１の上面から突出した信号端子３の端部を搭載面に沿うような向きに屈曲させればよい。   FIG. 8 is a cross-sectional view showing an example of an embodiment of an electronic component mounting package of the present invention. When the direction in which the through-holes 1c and 1c are inclined forms a large angle with respect to the mounting surface of the mounting portion 1a as in the example shown in FIG. 8, it protrudes from the upper surface of the base 1 as in the example shown in FIG. The end of the signal terminal 3 may be bent in a direction along the mounting surface.

図９は、本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。また、図10（ａ）は、図９のＡ部を拡大した断面図であり、図10（ｂ）および（ｃ）は、図10（ａ）と同様に他の例を示す拡大した断面図である。図10（ａ）〜（ｃ）においては、図４に示す例のような、内径が基体の上面と下面とで等しい（一定である）貫通孔１ｃを２点鎖線で示している。   FIG. 9 is a cross-sectional view showing an example of an embodiment of an electronic component mounting package of the present invention. 10A is an enlarged cross-sectional view of part A of FIG. 9, and FIGS. 10B and 10C are enlarged cross-sectional views showing other examples similar to FIG. 10A. It is. In FIGS. 10 (a) to 10 (c), as shown in the example of FIG. 4, a through hole 1c having the same inner diameter on the upper surface and the lower surface of the base is shown by a two-dot chain line.

本発明の電子部品搭載用パッケージは、図９および図10に示す例のように、上記構成において、貫通孔１ｃは基体の下面から上面にかけて内径が小さくなっていることが好ましい。このことから、貫通孔１ｃの内径が一定である場合に比較して、図10（ａ）および（ｃ）に示す例のように、２つの貫通孔１ｃ・１ｃ間の距離を短くすることなく、基体１の上面で貫通孔１ｃを蓋体６の接合部１ｂからより離すことができるので、接合時の衝撃や接合後の熱応力がより緩和され、また、接合部１ｂで発生した熱がより拡散しやすくなり、より高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。また、図10（ｂ）に示す例のように、基体１の上面における蓋体６の接合部１ｂから貫通孔１ｃまでの距離が、貫通孔１ｃの内径が一定である場合と同じであるときには、基体１の上面および下面に対する貫通孔１ｃ（の中心を通る線）の傾斜角度が小さくなることから、貫通孔１ｃに充填された封止材２を貫通して固定された信号端子３の屈曲する角度（図10に示すθｓ）が小さくなるので、高周波信号の損失がより小さい電子部品搭載用パッケージとなる。   In the electronic component mounting package of the present invention, as in the examples shown in FIGS. 9 and 10, in the above configuration, the through hole 1c preferably has a smaller inner diameter from the lower surface to the upper surface of the base. Therefore, compared to the case where the inner diameter of the through hole 1c is constant, the distance between the two through holes 1c and 1c is not shortened as in the example shown in FIGS. 10 (a) and 10 (c). Since the through hole 1c can be further separated from the joint portion 1b of the lid body 6 on the upper surface of the base body 1, the impact at the time of joining and the thermal stress after joining are further relaxed, and the heat generated at the joint portion 1b is reduced. It becomes an electronic component mounting package that can be more easily diffused and a highly reliable electronic device can be obtained. Also, as in the example shown in FIG. 10B, when the distance from the joint 1b of the lid 6 to the through hole 1c on the upper surface of the base 1 is the same as when the inner diameter of the through hole 1c is constant. Since the angle of inclination of the through hole 1c (line passing through the center thereof) with respect to the upper surface and the lower surface of the base body 1 is reduced, the signal terminal 3 bent through the sealing material 2 filled in the through hole 1c is bent. Since the angle (θs shown in FIG. 10) to be reduced becomes small, the electronic component mounting package with a smaller loss of the high-frequency signal is obtained.

図11は、本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。   FIG. 11 is a cross-sectional view showing an example of an embodiment of an electronic component mounting package of the present invention.

本発明の電子部品搭載用パッケージは、図11に示す例のように、上記構成において、信号端子３は貫通孔１ｃ内において基体１の下面から上面にかけて径が小さくなっていることが好ましい。このようにすると、基体１の上面側の内径を小さくした場合であっても、貫通孔１ｃ内の信号端子３の特性インピーダンスを容易に整合させることができる。貫通孔１ｃの内径を基体１の下面から上面にかけて小さくした場合には、信号端子３の径が一定であると、貫通孔１ｃの上部おいて信号端子３と貫通孔１ｃの内面との距離が小さくなるので特性インピーダンスが小さくなってしまうが、信号端子３の径が下面から上面にかけて小さくなっていると、貫通孔１ｃの内径とともに信号端子３の径も小さくなっているので、貫通孔１ｃの上部における特性インピーダンスが小さくならず、特性インピーダンスを整合させることができる。また、貫通孔１ｃの上部における特性インピーダンスが小さくなった分、基体１の下面側の内径を大きくして貫通孔１ｃの下部における特性インピーダンスを大きくすることにより、貫通孔１ｃ内における平均の特性インピーダンスを所定の値に整合させてもよい。この場合は、信号端子３の径が下面から上面にかけて小さくなっていると、基体１の上面側の内径をより小さくすることができるので、基体１の上面で蓋体６の接合部１ｂから貫通孔１ｃまでの距離をより大きくしたり、信号端子３の屈曲角度θｓをより小さくしたりすることができる。あるいは、貫通孔１ｃの上部における特性インピーダンスの低下が抑えられるので、貫通孔１ｃ内における平均の特性インピーダンスを整合させるために基体１の下面側の内径をあまり大きくする必要がなく、２つの貫通孔１ｃ・１ｃの間に接地端子４を設けるスペースを確保することができる。また、貫通孔１ｃの内径が基体１の上下面で同じ場合には、貫通孔１ｃ内における平均の特性インピーダンスを所定の値に整合させるために貫通孔１ｃの内径をより小さくすると、基体１の上面で蓋体６の接合部１ｂから貫通孔１ｃまでの距離をより大きくすることができる。   In the electronic component mounting package of the present invention, as in the example shown in FIG. 11, in the above configuration, the signal terminal 3 preferably has a diameter that decreases from the lower surface to the upper surface of the substrate 1 in the through hole 1c. In this way, even when the inner diameter on the upper surface side of the substrate 1 is reduced, the characteristic impedance of the signal terminal 3 in the through hole 1c can be easily matched. When the inner diameter of the through-hole 1c is reduced from the lower surface to the upper surface of the base 1, if the diameter of the signal terminal 3 is constant, the distance between the signal terminal 3 and the inner surface of the through-hole 1c is above the through-hole 1c. However, if the diameter of the signal terminal 3 is reduced from the lower surface to the upper surface, the diameter of the signal terminal 3 is reduced together with the inner diameter of the through hole 1c. The characteristic impedance in the upper portion is not reduced, and the characteristic impedance can be matched. Further, the characteristic impedance in the upper part of the through hole 1c is reduced, and the characteristic impedance in the lower part of the through hole 1c is increased by increasing the inner diameter on the lower surface side of the substrate 1, thereby increasing the average characteristic impedance in the through hole 1c. May be matched to a predetermined value. In this case, if the diameter of the signal terminal 3 is reduced from the lower surface to the upper surface, the inner diameter on the upper surface side of the base body 1 can be further reduced, so that the upper surface of the base body 1 penetrates from the joint portion 1b of the lid 6. The distance to the hole 1c can be made larger, and the bending angle θs of the signal terminal 3 can be made smaller. Alternatively, since the decrease in characteristic impedance at the upper part of the through hole 1c is suppressed, it is not necessary to make the inner diameter on the lower surface side of the base 1 too large in order to match the average characteristic impedance in the through hole 1c. A space for providing the ground terminal 4 between 1c and 1c can be secured. Further, when the inner diameter of the through hole 1c is the same on the upper and lower surfaces of the base body 1, if the inner diameter of the through hole 1c is made smaller in order to match the average characteristic impedance in the through hole 1c to a predetermined value, The distance from the joint 1b of the lid 6 to the through hole 1c on the upper surface can be further increased.

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの搭載部１ａに電子部品５を搭載するとともに、基体１の接合部１ｂに蓋体６を接合したことを特徴とするものである。このことにより、貫通孔１ｃの径が大きい場合であっても、基体１の上面では貫通孔１ｃが蓋体６の接合部１ｂから離れていることにより、蓋体６を基体１の上面の外周部の接合部１ｂに溶接またはろう接により接合したときの衝撃や接合後の熱応力により気密性が損なわれることがないので、気密性に優れた、高信頼性の電子装置となる。   The electronic device of the present invention is characterized in that the electronic component 5 is mounted on the mounting portion 1a of the electronic component mounting package of the present invention having any of the above-described configurations, and the lid body 6 is bonded to the bonding portion 1b of the base body 1. It is what. As a result, even when the diameter of the through hole 1c is large, the through hole 1c is separated from the joint 1b of the lid body 6 on the upper surface of the base body 1, so that the lid body 6 is placed on the outer periphery of the upper surface of the base body 1. Since the airtightness is not impaired by impact or thermal stress after joining to the joint 1b of the part by welding or brazing, the highly reliable electronic device with excellent airtightness is obtained.

基体１は、上面の中央部に電子部品５の搭載部１ａを有するとともに搭載された電子部品５が発生する熱をパッケージの外部に放散する機能を有する。このため、基体１は、熱伝導性の良い金属から成り、搭載される電子部品５やセラミック製の回路基板５ａの熱膨張係数に近いものやコストの安いものとして、例えば、Ｆｅ99.6質量％−Ｍｎ0.4質量％系のＳＰＣ（Steel Plate Cold）材や、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｍｎ合金等から選ばれる。例えば基体１がＦｅ−Ｍｎ合金から成る場合は、このインゴット（塊）に圧延加工や打ち抜き加工等の周知の金属加工方法を施すことによって所定形状に製作され、貫通孔１ｃはドリル加工や金型による打ち抜き加工により形成される。また、基体１が搭載部１ａとして突出部を有する形状の場合は、切削加工やプレス加工することにより形成することができる。   The substrate 1 has a mounting portion 1a for the electronic component 5 at the center of the upper surface and has a function of radiating heat generated by the mounted electronic component 5 to the outside of the package. For this reason, the base 1 is made of a metal having good thermal conductivity, and is close to the thermal expansion coefficient of the electronic component 5 or the ceramic circuit board 5a to be mounted or has a low cost. For example, Fe 99.6% by mass -Mn 0.4 mass% SPC (Steel Plate Cold) material, Fe-Ni-Co alloy, Fe-Mn alloy, or the like. For example, when the substrate 1 is made of an Fe—Mn alloy, the ingot (lumb) is manufactured in a predetermined shape by applying a known metal processing method such as rolling or punching, and the through-hole 1c is formed by drilling or molding. It is formed by punching. Moreover, when the base | substrate 1 is a shape which has a protrusion part as the mounting part 1a, it can form by cutting or pressing.

基体１の形状は、通常は厚みが0.5〜２ｍｍの平板状であり、その形状は特に制限はないが、例えば直径が３〜10ｍｍの円板状，半径が1.5〜８ｍｍの円周の一部を切り取った半円板状，一辺が３〜15ｍｍの四角板状等であり、上面から下面にかけて形成された直径が0.6〜2.65ｍｍの貫通孔１ｃを複数有する。図１〜図８に示す例では、２つの貫通孔１ｃを有する基体１に１個の電子部品５を搭載しているが、複数の電子部品５を搭載したり、電子部品５の数や電子部品５の端子の数に応じて信号端子３を固定する貫通孔１ｃを２つ以上形成したりしても構わない。   The shape of the substrate 1 is usually a flat plate having a thickness of 0.5 to 2 mm, and the shape is not particularly limited, but for example, a disk having a diameter of 3 to 10 mm and a part of a circumference having a radius of 1.5 to 8 mm. And a plurality of through holes 1c having a diameter of 0.6 to 2.65 mm formed from the upper surface to the lower surface. In the example shown in FIGS. 1 to 8, one electronic component 5 is mounted on the base body 1 having two through holes 1 c, but a plurality of electronic components 5 are mounted, the number of electronic components 5 and the number of electronic components 5 Depending on the number of terminals of the component 5, two or more through holes 1c for fixing the signal terminal 3 may be formed.

基体１の厚みは0.5ｍｍ以上２ｍｍ以下が好ましい。厚みが0.5ｍｍ未満の場合は、電子部品５を保護するための金属製の蓋体６を金属製の基体１の上面に接合する際に、接合温度等の接合条件により基体１が曲がったりして変形し易くなり、厚みが２ｍｍを超えると、電子部品搭載用パッケージや電子装置の厚みが不要に厚いものとなり、小型化し難くなる。   The thickness of the substrate 1 is preferably 0.5 mm or more and 2 mm or less. When the thickness is less than 0.5 mm, when the metal lid 6 for protecting the electronic component 5 is bonded to the upper surface of the metal substrate 1, the substrate 1 may be bent depending on the bonding conditions such as the bonding temperature. If the thickness exceeds 2 mm, the electronic component mounting package and the electronic device are unnecessarily thick and difficult to downsize.

貫通孔１ｃは基体１を斜めに貫通しているが、基体１の上面および下面に対する貫通孔１ｃの傾斜角度（図２に示すθｈ）は、基体１の平面視の大きさや厚み、また貫通孔１ｃの径により適宜設定すればよい。上記のような寸法の基体１および貫通孔１ｃであれば、貫通孔１ｃの傾斜角度θｈは、斜めに貫通させることで得られる基体１の上面側の開口の位置と基体１の下面側の開口の位置との差や貫通孔１ｃの形成のしやすさを考慮すると、概ね120°〜150°とすればよい。例えば、基体１は直径が７ｍｍで厚さが1.75ｍｍのものを用い、基体１の上面における２つの貫通孔１ｃ・１ｃの開口の間隔を0.3ｍｍとして直径1.75ｍｍの貫通孔１ｃを形成する場合は、傾斜角度θｈを120°とする。このようにすると、基体１の上面側の開口は基体１の下面側の開口の位置より約１ｍｍ基体１の中心側へ位置することとなる。   The through-hole 1c penetrates the base 1 obliquely, but the inclination angle (θh shown in FIG. 2) of the through-hole 1c with respect to the upper surface and the lower surface of the base 1 depends on the size and thickness of the base 1 in plan view, and the through-hole What is necessary is just to set suitably with the diameter of 1c. In the case of the base 1 and the through-hole 1c having the dimensions as described above, the inclination angle θh of the through-hole 1c is such that the position of the opening on the upper surface side of the base 1 and the opening on the lower surface side of the base 1 obtained by allowing the through-hole to penetrate obliquely. Considering the difference from the position and the ease of forming the through-hole 1c, it may be approximately 120 ° to 150 °. For example, when the base 1 has a diameter of 7 mm and a thickness of 1.75 mm, and the interval between the openings of the two through holes 1c and 1c on the upper surface of the base 1 is 0.3 mm, the through hole 1c having a diameter of 1.75 mm is formed. The inclination angle θh is 120 °. In this way, the opening on the upper surface side of the substrate 1 is positioned about 1 mm closer to the center of the substrate 1 than the position of the opening on the lower surface side of the substrate 1.

さらに、貫通孔１ｃの上側の径を1.35ｍｍとして下側の径より小さくすると、基体１の上面において貫通孔１ｃを蓋体６の接合部１ｂから最大でさらに約0.45ｍｍ離すことができる。また、信号端子３が貫通孔１ｃの中心を通る場合には、信号端子３の屈曲角度θｓは30°であったのを約23°まで小さくすることができる。   Furthermore, if the upper diameter of the through hole 1c is 1.35 mm and is smaller than the lower diameter, the through hole 1c can be further separated from the joint 1b of the lid 6 by about 0.45 mm at the maximum on the upper surface of the base 1. When the signal terminal 3 passes through the center of the through hole 1c, the bending angle θs of the signal terminal 3 can be reduced to about 23 ° from 30 °.

なお、ここでいう貫通孔１ｃの径とは、開口部の径ではなく、図２に記号Ｄで示すような、貫通孔１ｃが基体１を貫通している方向（貫通孔１ｃの長さ方向）に対して直角方向に測定するものである。   Here, the diameter of the through hole 1c is not the diameter of the opening, but the direction in which the through hole 1c passes through the base 1 as shown by the symbol D in FIG. 2 (the length direction of the through hole 1c). ) In the direction perpendicular to

また、基体１の表面には、耐食性に優れ、電子部品５や回路基板５ａあるいは蓋体６を接合し固定するためのろう材との濡れ性に優れた、厚さが0.5〜９μｍのＮｉ層と厚さが0.5〜５μｍのＡｕ層とをめっき法により順次被着させておくのがよい。これにより、基体１が酸化腐食するのを有効に防止できるとともに電子部品５や回路基板５ａあるいは蓋体６を基体１に良好にろう付けすることができる。   Further, on the surface of the substrate 1, a Ni layer having a thickness of 0.5 to 9 [mu] m having excellent corrosion resistance and excellent wettability with a brazing material for joining and fixing the electronic component 5, the circuit board 5a or the lid body 6. And an Au layer having a thickness of 0.5 to 5 μm are preferably sequentially deposited by a plating method. Thereby, it is possible to effectively prevent the base body 1 from being oxidatively corroded, and to braze the electronic component 5, the circuit board 5 a, or the lid body 6 to the base body 1 satisfactorily.

基体１に形成された貫通孔１ｃには、封止材２が充填されており、この封止材２を貫通して信号端子３が固定されている。信号端子３は、一方の端部（上端部）は基体１の上面と面一とするか、あるいは２ｍｍ程度まで突出させ、他方の端部（下端部）は基体１の下面から１〜20ｍｍ程度突出させて固定される。例えば、図１および図２に示す例のように、信号端子３の上端部と電子部品５（または電子部品５が搭載された回路基板５ａ）とをボンディングワイヤ７を介して電気的に接続する場合は、信号端子３の上端部は必ずしも基体１の上面から突出していなくてもよい。一方、信号端子３の下端部は、外部電気回路（図示せず）に接続するために基体１の下面から突出しているのが好ましい。例えば、図１または図３に示す例のように、信号端子３の上端部と電子部品５とを電気的に接続するとともに、信号端子３の下端部を外部電気回路（図示せず）に電気的に接続することにより、信号端子３は電子部品５と外部電気回路との間の入出力信号を伝送する機能を果たす。   A through hole 1 c formed in the base 1 is filled with a sealing material 2, and the signal terminal 3 is fixed through the sealing material 2. The signal terminal 3 has one end portion (upper end portion) flush with the upper surface of the base body 1 or protrudes to about 2 mm, and the other end portion (lower end portion) from the lower surface of the base body 1 to about 1 to 20 mm. It is fixed by protruding. For example, as in the example shown in FIGS. 1 and 2, the upper end portion of the signal terminal 3 and the electronic component 5 (or the circuit board 5 a on which the electronic component 5 is mounted) are electrically connected via the bonding wire 7. In this case, the upper end portion of the signal terminal 3 does not necessarily protrude from the upper surface of the base body 1. On the other hand, it is preferable that the lower end portion of the signal terminal 3 protrudes from the lower surface of the base 1 in order to connect to an external electric circuit (not shown). For example, as shown in FIG. 1 or FIG. 3, the upper end of the signal terminal 3 and the electronic component 5 are electrically connected, and the lower end of the signal terminal 3 is electrically connected to an external electric circuit (not shown). Thus, the signal terminal 3 functions to transmit an input / output signal between the electronic component 5 and the external electric circuit.

封止材２は、ガラスやセラミックスなどの絶縁性の無機材料から成り、信号端子３と基体１との絶縁間隔を確保するとともに、信号端子３を基体１の貫通孔１ｃ内に固定する機能を有する。このような封止材２の例としては、ホウケイ酸ガラス，ソーダガラス等のガラスおよびこれらのガラスに封止材２の熱膨張係数や比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。例えば、特性インピーダンスを50Ωとするには、貫通孔１ｃの内径が1.75ｍｍで信号端子３の外径が0.2ｍｍの場合、あるいは貫通孔１ｃの内径が2.2ｍｍで信号端子３の外径が0.25ｍｍの場合であれば、封止材２の比誘電率が6.8であるものを用いればよい。また、貫通孔１ｃの内径が1.65ｍｍで信号端子３の外径が0.25ｍｍの場合であれば、封止材２の比誘電率が５であるものを用いればよい。   The sealing material 2 is made of an insulating inorganic material such as glass or ceramics, and has a function of securing an insulation interval between the signal terminal 3 and the base 1 and fixing the signal terminal 3 in the through hole 1 c of the base 1. Have. Examples of such a sealing material 2 include glass such as borosilicate glass and soda glass, and a glass filler added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 2. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide. For example, in order to set the characteristic impedance to 50Ω, the inner diameter of the through hole 1c is 1.75 mm and the outer diameter of the signal terminal 3 is 0.2 mm, or the inner diameter of the through hole 1c is 2.2 mm and the outer diameter of the signal terminal 3 is 0.25. In the case of mm, the sealing material 2 having a relative dielectric constant of 6.8 may be used. Further, when the inner diameter of the through hole 1c is 1.65 mm and the outer diameter of the signal terminal 3 is 0.25 mm, the sealing material 2 having a relative dielectric constant of 5 may be used.

また、同じく外径が0.25ｍｍで一定である信号端子３と比誘電率が５である封止材２とを用いて、基体１の上面側の貫通孔１ｃの内径を1.35ｍｍと小さくした場合は、下面側の貫通孔１ｃの内径を1.95ｍｍとすれば、特性インピーダンスは上面側で45Ω、下面側で55Ωとなり、貫通孔１ｃ内における平均の特性インピーダンスを50Ωとすることができる。   Similarly, when the inner diameter of the through hole 1c on the upper surface side of the substrate 1 is reduced to 1.35 mm using the signal terminal 3 having a constant outer diameter of 0.25 mm and the sealing material 2 having a relative dielectric constant of 5, If the inner diameter of the through hole 1c on the lower surface side is 1.95 mm, the characteristic impedance is 45Ω on the upper surface side and 55Ω on the lower surface side, and the average characteristic impedance in the through hole 1c can be 50Ω.

信号端子３は、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属から成り、例えば信号端子３がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、このインゴット（塊）に圧延加工や打ち抜き加工、切削加工等の周知の金属加工方法を施すことによって、長さが1.5〜22ｍｍで直径が0.1〜１ｍｍの線状に製作される。信号端子３の強度を確保しながらより高いインピーダンスでのマッチングを行ないつつ小型にするには、信号端子３の直径は0.15〜0.25ｍｍが好ましい。信号端子３の直径が0.15ｍｍより細くなると、電子部品搭載用パッケージを実装する場合の取り扱いで信号端子３が曲がりやすくなり、作業性が低下しやすくなる。また、直径が0.25ｍｍより太くなると、インピーダンス整合させた場合の貫通孔１ｃの径が信号端子３の径に伴い大きくなるので、製品の小型化に向かないものとなってしまう。   The signal terminal 3 is made of a metal such as Fe-Ni-Co alloy or Fe-Ni alloy. For example, when the signal terminal 3 is made of Fe-Ni-Co alloy, the ingot (lumb) is rolled or punched, By applying a known metal processing method such as cutting, a wire having a length of 1.5 to 22 mm and a diameter of 0.1 to 1 mm is manufactured. In order to reduce the size of the signal terminal 3 while ensuring the strength of the signal terminal 3 while performing matching with a higher impedance, the diameter of the signal terminal 3 is preferably 0.15 to 0.25 mm. When the diameter of the signal terminal 3 is smaller than 0.15 mm, the signal terminal 3 is easily bent by handling when the electronic component mounting package is mounted, and the workability is easily lowered. On the other hand, if the diameter is larger than 0.25 mm, the diameter of the through hole 1c when impedance matching is increased with the diameter of the signal terminal 3, which is not suitable for downsizing of the product.

信号端子３の径を貫通孔１ｃ内で下面から上面にかけて小さくする場合は、貫通孔１ｃの下側での直径を上記の好ましい0.15〜0.25ｍｍとした場合であれば、貫通孔１ｃの上側での直径はそれより小さくするが、0.1ｍｍ程度までとするのが好ましい。貫通孔１ｃの上側での直径が0.1ｍｍより細くなると、信号端子３の強度が不足するようになって、回路基板５ａを実装する場合の取り扱いで回路基板５ａと接続する側の信号端子３が曲がりやすくなり、作業性が低下しやすくなる。   When the diameter of the signal terminal 3 is reduced from the lower surface to the upper surface in the through hole 1c, if the diameter on the lower side of the through hole 1c is 0.15 to 0.25 mm, the upper side of the through hole 1c. Although the diameter of is smaller than that, it is preferably about 0.1 mm. If the diameter on the upper side of the through-hole 1c becomes thinner than 0.1 mm, the strength of the signal terminal 3 becomes insufficient, and the signal terminal 3 on the side connected to the circuit board 5a is handled in the case of mounting the circuit board 5a. It becomes easy to bend and workability tends to be lowered.

貫通孔１ｃの内径が、基体１の上面側は0.65ｍｍで、下面側は1.65ｍｍであり、封止材２の比誘電率が５であるものを用いた場合は、信号端子３の上側での外径を0.1ｍｍとし、下側での外径を0.25ｍｍとすれば、上面側および下面側ともに特性インピーダンスを50Ωとすることができる。   When the inner diameter of the through-hole 1c is 0.65 mm on the upper surface side of the base 1 and 1.65 mm on the lower surface side, and the relative permittivity of the sealing material 2 is 5, the inner diameter of the through hole 1c is above the signal terminal 3. If the outer diameter is 0.1 mm and the lower outer diameter is 0.25 mm, the characteristic impedance can be 50Ω on both the upper surface side and the lower surface side.

また、信号端子３の上側での外径が0.1ｍｍで、下側での外径が0.25ｍｍであり、封止材２の比誘電率が５である場合は、貫通孔１ｃの内径を、基体１の上面側は１ｍｍとし、下面側は1.05ｍｍとすると、特性インピーダンスは貫通孔１ｃの上面側が62Ω、下面側が38Ωとなり、貫通孔１ｃ内における特性インピーダンスを平均で50Ωとすることができる。   When the outer diameter on the upper side of the signal terminal 3 is 0.1 mm, the outer diameter on the lower side is 0.25 mm, and the relative dielectric constant of the sealing material 2 is 5, the inner diameter of the through hole 1c is If the upper surface side of the substrate 1 is 1 mm and the lower surface side is 1.05 mm, the characteristic impedance is 62Ω on the upper surface side of the through hole 1c and 38Ω on the lower surface side, and the characteristic impedance in the through hole 1c can be 50Ω on average.

また、貫通孔の内径が上下とも1.07ｍｍで封止材の比誘電率が５である場合は、信号端子３の上側での外径を0.11ｍｍとし、下側での外径を0.25ｍｍとすると、特性インピーダンスは貫通孔１ｃの上面側が61Ω、下面側が39Ωとなり、貫通孔１ｃ内における特性インピーダンスを平均で50Ωとすることができる。そして、上記の貫通孔１ｃの内径が上下とも1.65ｍｍで、信号端子３の外径が上下とも0.25ｍｍであり、封止材２の比誘電率が５である例に対して、同様の特性インピーダンスとしながら、基体１の上面側において蓋体６の接合部１ｂから貫通孔１ｃまでの距離を0.29ｍｍ離すことができる。   When the inner diameter of the through hole is 1.07 mm both in the upper and lower directions and the relative dielectric constant of the sealing material is 5, the outer diameter on the upper side of the signal terminal 3 is 0.11 mm, and the outer diameter on the lower side is 0.25 mm. Then, the characteristic impedance is 61Ω on the upper surface side of the through hole 1c and 39Ω on the lower surface side, and the characteristic impedance in the through hole 1c can be 50Ω on average. The same characteristics are obtained with respect to an example in which the inner diameter of the through hole 1c is 1.65 mm in both upper and lower directions, the outer diameter of the signal terminal 3 is 0.25 mm in both upper and lower directions, and the relative dielectric constant of the sealing material 2 is 5. While maintaining the impedance, the distance from the joint 1b of the lid 6 to the through hole 1c on the upper surface side of the substrate 1 can be separated by 0.29 mm.

信号端子３を貫通孔１ｃに充填された封止材２を貫通して固定するには、例えば、封止材２がガラスから成る場合は、周知の粉体プレス法や押し出し成形法を用いてガラス粉末を成形して、内径を信号端子３の外径に合わせ、外径を貫通孔１ｃの内径に合わせた筒状の成形体を作製し、この封止材２の成形体を貫通孔１ｃに挿入し、さらに信号端子３をこの封止材２の孔に挿通し、しかる後、所定の温度に加熱して封止材２を溶融させた後、冷却して固化させることにより行なうことができる。これにより、封止材２により貫通孔１ｃが気密に封止されるとともに、封止材２によって信号端子３が基体１と絶縁されて固定され、同軸線路が形成される。   To fix the signal terminal 3 through the sealing material 2 filled in the through hole 1c, for example, when the sealing material 2 is made of glass, a known powder pressing method or extrusion molding method is used. A glass powder is molded to make a cylindrical molded body whose inner diameter is matched with the outer diameter of the signal terminal 3 and whose outer diameter is matched with the inner diameter of the through hole 1c, and this molded body of the sealing material 2 is made into the through hole 1c. Then, the signal terminal 3 is inserted into the hole of the sealing material 2 and then heated to a predetermined temperature to melt the sealing material 2 and then cooled and solidified. it can. Accordingly, the through hole 1c is hermetically sealed by the sealing material 2, and the signal terminal 3 is insulated and fixed from the base body 1 by the sealing material 2, thereby forming a coaxial line.

この後に、基体１の下面側に突出した信号端子３の下端部と、必要に応じて基体１の上面側に突出した信号端子３の上端部とを所望の形状に屈曲させればよい。なお、信号端子３を屈曲させた際の応力により封止材２にクラックが発生する場合があるので、このような場合は、封止材２を再度溶融させてクラックをなくしておけばよい。   Thereafter, the lower end portion of the signal terminal 3 protruding to the lower surface side of the base body 1 and the upper end portion of the signal terminal 3 protruding to the upper surface side of the base body 1 may be bent into a desired shape as necessary. Note that cracks may occur in the sealing material 2 due to stress when the signal terminal 3 is bent. In such a case, the sealing material 2 may be melted again to eliminate the cracks.

接地端子４は、信号端子３と同じ様にして製作され、基体１の下面にロウ材等を用いて接合される。図２に示す例のように、位置決めの容易性と接合強度の向上のために、予め基体１の下面に穴を形成しておき、その穴に接地端子４を挿入して接合してもよい。また、同様の理由で、図２に示す例のように、基体１の下面に当接するように接地端子４に鍔をつけて、接合面積をより大きくしてもよい。このようにして基体１に接地端子４を接合することにより、接続端子４を外部電気回路に接続した際には、基体１が接地導体としても機能する。   The ground terminal 4 is manufactured in the same manner as the signal terminal 3 and is joined to the lower surface of the base 1 using a brazing material or the like. As in the example shown in FIG. 2, in order to facilitate positioning and improve the bonding strength, a hole may be formed in the lower surface of the base 1 in advance, and the ground terminal 4 may be inserted into the hole for bonding. . Further, for the same reason, as in the example shown in FIG. 2, the grounding terminal 4 may be provided with a ridge so as to come into contact with the lower surface of the base 1 to increase the bonding area. By joining the ground terminal 4 to the base body 1 in this way, the base body 1 also functions as a ground conductor when the connection terminal 4 is connected to an external electric circuit.

このような本発明の電子部品搭載用パッケージの搭載部１ａに電子部品５を搭載するとともに、基体１の接合部１ｂに蓋体６を接合することにより、本発明の電子装置となる。   The electronic component 5 is mounted on the mounting portion 1a of the electronic component mounting package of the present invention, and the lid 6 is bonded to the bonding portion 1b of the base body 1, whereby the electronic device of the present invention is obtained.

電子部品搭載用パッケージに電子部品５を搭載して電気的に接続するには、上述したように、図１に示す例のように基体１の上面に直接電子部品５を搭載して接続する方法や、図３に示す例のように回路基板５ａを介して電子部品５を搭載して接続する方法などがある。   In order to mount and electrically connect the electronic component 5 to the electronic component mounting package, as described above, a method of mounting and connecting the electronic component 5 directly on the upper surface of the base 1 as in the example shown in FIG. Alternatively, there is a method of mounting and connecting the electronic component 5 via the circuit board 5a as in the example shown in FIG.

電子部品５としては、ＬＤ（レーザーダイオード）やＰＤ（フォトダイオ−ド）等の光半導体素子，半導体集積回路素子を含む半導体素子，水晶振動子や弾性表面波素子等の圧電素子，圧力センサー素子，容量素子，抵抗器等が挙げられる。   Examples of the electronic component 5 include optical semiconductor elements such as LD (laser diode) and PD (photodiode), semiconductor elements including semiconductor integrated circuit elements, piezoelectric elements such as crystal resonators and surface acoustic wave elements, and pressure sensor elements. , Capacitive elements, resistors and the like.

回路基板５ａは、酸化アルミニウム（アルミナ：Ａｌ２Ｏ３）質焼結体，窒化アルミニウム（ＡｌＮ）質焼結体等のセラミックス絶縁材料等から成る絶縁基板に配線導体が形成されたものである。絶縁基板が例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ（Ａｌ２Ｏ３）やシリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤，溶媒を添加混合して泥漿状とし、これを周知のドクターブレード法やカレンダーロール法等によりシート状に成形してセラミックグリーンシート（以下、グリーンシートともいう）を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層し、これを約1600℃の温度で焼成することにより製作される。 The circuit board 5a is obtained by forming a wiring conductor on an insulating substrate made of a ceramic insulating material such as an aluminum oxide (alumina: Al 2 O 3 ) sintered body or an aluminum nitride (AlN) sintered body. If the insulating substrate is made of, for example, an aluminum oxide sintered body, first, an organic solvent suitable for a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. , A solvent is added and mixed to form a slurry, which is formed into a sheet by a known doctor blade method, calendar roll method, or the like to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of sheets are laminated as necessary, and the green sheet is fired at a temperature of about 1600 ° C.

配線導体は、例えば、図６に示す例の回路基板５ａでは、絶縁基板の上面には信号端子３・３を接続するための端子用導体と、電子部品５を搭載するとともに電子部品５の下面の接地電極を接続するための接地用導体とが形成され、下面には基体１に搭載して接続するための搭載用導体が形成され、接地用導体と搭載用導体とは、絶縁基板の側面に形成された、または絶縁基板を貫通して形成された接続導体により接続される。このような配線導体は、電子部品５によりその接続が異なるので、それに応じて形成されるものである。また、電子部品５と配線導体とは例えばボンディングワイヤにより接続されるが、このボンディングワイヤを短くすることで信号の伝送損失を少なくするために、例えば図６に示すように端子用導体を屈曲した形状として、ボンディングワイヤの接続位置が電子部品５にできるだけ近くなるようにするのが好ましい。   For example, in the circuit board 5 a of the example shown in FIG. 6, the wiring conductor includes a terminal conductor for connecting the signal terminals 3 and 3 on the upper surface of the insulating substrate and the lower surface of the electronic component 5. A grounding conductor for connecting the grounding electrode is formed, and a mounting conductor for mounting and connecting to the base 1 is formed on the lower surface. The grounding conductor and the mounting conductor are formed on the side surface of the insulating substrate. Or a connection conductor formed through the insulating substrate. Such a wiring conductor is formed in accordance with the connection of the electronic component 5 depending on the connection. The electronic component 5 and the wiring conductor are connected by, for example, a bonding wire. In order to reduce the signal transmission loss by shortening the bonding wire, for example, the terminal conductor is bent as shown in FIG. As a shape, it is preferable that the connection position of the bonding wire be as close as possible to the electronic component 5.

なお、端子用導体を屈曲させる場合には、例えば図９に示すように、屈曲角度が90°より大きくなるように段階的に屈曲させたり、屈曲部の角の部分に丸みをつけたりすると、屈曲部での反射による高周波の損失を少なくすることができるので好ましい。段階的に屈曲させる場合は、屈曲角度を120°以上とすると損失がより少なくなるので好ましい。また、図９に示す例では屈曲部の外側だけを段階的に屈曲させているが、屈曲部の内側も同様に段階的に屈曲させたり丸みをつけたりするのがより好ましい。   In addition, when bending the terminal conductor, for example, as shown in FIG. 9, if the bending angle is bent stepwise so that the bending angle is larger than 90 °, or if the corner of the bent portion is rounded, This is preferable because loss of high frequency due to reflection at the portion can be reduced. In the case of bending in stages, it is preferable to set the bending angle to 120 ° or more because loss is reduced. In the example shown in FIG. 9, only the outer side of the bent part is bent stepwise, but it is more preferable that the inner side of the bent part is bent stepwise and rounded in the same manner.

配線導体の形成方法は、絶縁基板と同時焼成で、あるいは絶縁基体を作製した後に金属メタライズを形成する周知の方法や、絶縁基板を作製した後に蒸着法やフォトリソグラフィ法により形成する方法がある。電子装置が小型であり、それに搭載される回路基板５ａはさらに小さいので、配線導体は微細なものとなり、また配線導体と信号端子３・３との位置合わせ精度を高めるためには蒸着法やフォトリソグラフィ法により形成する方法が好ましく、この場合は、必要に応じて絶縁基板の主面に研磨加工を施す場合もある。   As a method for forming the wiring conductor, there are a well-known method of forming metal metallization by co-firing with an insulating substrate, or after forming an insulating base, and a method of forming the insulating substrate by vapor deposition or photolithography after forming the insulating substrate. Since the electronic device is small and the circuit board 5a mounted on the electronic device is smaller, the wiring conductor is fine, and in order to increase the alignment accuracy between the wiring conductor and the signal terminals 3 and 3, a vapor deposition method or photo A method of forming by a lithography method is preferable, and in this case, the main surface of the insulating substrate may be polished as necessary.

以下、配線導体を蒸着法やフォトリソグラフィ法により形成する場合について詳細に説明する。配線導体は、例えば密着金属層，拡散防止層および主導体層が順次積層された３層構造の導体層から成る。   Hereinafter, the case where the wiring conductor is formed by vapor deposition or photolithography will be described in detail. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated.

密着金属層は、セラミックス等から成る絶縁基板との密着性を良好とするという観点からは、チタン（Ｔｉ），クロム（Ｃｒ），タンタル（Ｔａ），ニオブ（Ｎｂ），ニッケル−クロム（Ｎｉ−Ｃｒ）合金，窒化タンタル（Ｔａ２Ｎ）等の熱膨張率がセラミックスと近い金属のうちの少なくとも１種より成るのが好ましく、その厚みは0.01〜0.2μｍ程度が好ましい。密着金属層の厚みが0.01μｍ未満では、密着金属層を絶縁基板に強固に密着することが困難となる傾向があり、0.2μｍを超えると、成膜時の内部応力によって密着金属層が絶縁基板から剥離し易くなる傾向がある。 From the viewpoint of improving the adhesion with an insulating substrate made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni- It is preferable that the thermal expansion coefficient is at least one of metals close to that of ceramics, such as a Cr) alloy, tantalum nitride (Ta 2 N), and the thickness is preferably about 0.01 to 0.2 μm. If the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the insulating substrate. If the thickness exceeds 0.2 μm, the adhesion metal layer is insulated by the internal stress during film formation. It tends to become easy to peel off.

拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金（Ｐｔ），パラジウム（Ｐｄ），ロジウム（Ｒｈ），ニッケル（Ｎｉ），Ｎｉ−Ｃｒ合金，Ｔｉ−Ｗ合金等の熱伝導性の良好な金属のうち少なくとも１種より成ることが好ましく、その厚みは0.05〜１μｍ程度が好ましい。拡散防止層の厚みが0.05μｍ未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向があり、１μｍを超えると、成膜時の内部応力により拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にＮｉ−Ｃｒ合金を用いる場合は、Ｎｉ−Ｃｒ合金は絶縁基板との密着性が良好なため、密着金属層を省くことも可能である。   From the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer, the diffusion prevention layer is platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, Ti— It is preferably made of at least one metal having good thermal conductivity such as W alloy, and the thickness is preferably about 0.05 to 1 μm. If the thickness of the diffusion prevention layer is less than 0.05 μm, defects such as pinholes tend to be generated, making it difficult to perform the function as the diffusion prevention layer. If the thickness exceeds 1 μm, the diffusion prevention layer is caused by internal stress during film formation. There is a tendency to easily peel from the adhesion metal layer. When a Ni—Cr alloy is used for the diffusion preventing layer, the adhesion metal layer can be omitted because the Ni—Cr alloy has good adhesion to the insulating substrate.

主導体層は、電気抵抗の小さい金（Ａｕ），Ｃｕ，Ｎｉ，銀（Ａｇ）の少なくとも１種より成ることが好ましく、その厚みは0.1〜５μｍ程度が好ましい。主導体層の厚みが0.1μｍ未満では、電気抵抗が大きなものとなり回路基板５ａの配線導体に要求される電気抵抗を満足できなくなる傾向があり、５μｍを超えると、成膜時の内部応力により主導体層が拡散防止層から剥離し易く成る傾向がある。また、Ｃｕは酸化し易いので、その上にＮｉおよびＡｕからなる保護層を被覆してもよい。   The main conductor layer is preferably made of at least one of gold (Au), Cu, Ni, and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance tends to be large and the electric resistance required for the wiring conductor of the circuit board 5a tends to be unsatisfactory. If the thickness exceeds 5 μm, it is driven by internal stress during film formation. There is a tendency that the body layer is easily peeled off from the diffusion preventing layer. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

電子部品５の電子部品搭載用パッケージや回路基板５ａへの搭載、あるいは回路基板５ａの電子部品搭載用パッケージへの搭載は、低融点ろう材により固定することにより行なえばよい。例えば、回路基板５ａを基体１上に搭載した後に電子部品５を回路基板５ａ上に搭載する場合は、回路基板５ａの固定には金−錫（Ａｕ−Ｓｎ）合金や金−ゲルマニウム（Ａｕ−Ｇｅ）合金をろう材として用い、電子部品５の固定には、これらより融点の低い錫−銀（Ｓｎ−Ａｇ）合金や錫−銀−銅（Ｓｎ−Ａｇ−Ｃｕ）合金のろう材や、融点より低い温度で硬化可能な、Ａｇエポキシ等の樹脂製の接着剤を用いればよい。また、電子部品５を回路基板５ａ上に搭載した後に回路基板５ａを基体１上に搭載してもよく、その場合は上記とは逆に、回路基板５ａを基体１上に搭載する際に用いるろう材の融点の方を低くすればよい。いずれの場合であっても、回路基板５ａ上や基体１の搭載部１ａ上にろう材ペーストを周知のスクリーン印刷法を用いて印刷したり、フォトリソグラフィ法によってろう材層を形成したり、低融点ろう材のプリフォームを載置するなどすればよい。   The electronic component 5 may be mounted on the electronic component mounting package or the circuit board 5a, or the circuit board 5a may be mounted on the electronic component mounting package by fixing with a low melting point brazing material. For example, when the electronic component 5 is mounted on the circuit board 5a after the circuit board 5a is mounted on the base body 1, a gold-tin (Au—Sn) alloy or gold-germanium (Au—) is used to fix the circuit board 5a. Ge) alloy is used as a brazing material, and for fixing the electronic component 5, a brazing material of a tin-silver (Sn-Ag) alloy or a tin-silver-copper (Sn-Ag-Cu) alloy having a lower melting point than these, A resin adhesive such as Ag epoxy that can be cured at a temperature lower than the melting point may be used. In addition, after mounting the electronic component 5 on the circuit board 5a, the circuit board 5a may be mounted on the base body 1. In this case, contrary to the above, it is used when mounting the circuit board 5a on the base body 1. The melting point of the brazing material may be lowered. In any case, a brazing material paste is printed on the circuit board 5a or the mounting portion 1a of the base body 1 by using a well-known screen printing method, a brazing material layer is formed by a photolithography method, A preform of a melting point brazing material may be placed.

蓋体６は、平面視で基体１の上面の外周領域の接合部１ｂの形状に沿った外形で、基体１の上面の搭載部１ａに搭載された電子部品５を覆うような空間を有する形状のものである。電子部品５と対向する部分に光を透過させる窓を設けてもよいし、窓に換えて、または窓に加えて光ファイバおよび戻り光防止用の光アイソレータを接合したものでもよい。   The lid body 6 has an outer shape along the shape of the joint portion 1b in the outer peripheral area of the upper surface of the base body 1 in a plan view and has a shape that covers the electronic component 5 mounted on the mounting portion 1a on the upper surface of the base body 1 belongs to. A window that transmits light may be provided in a portion facing the electronic component 5, or an optical fiber and an optical isolator for preventing return light may be joined in place of or in addition to the window.

蓋体６は、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金、Ｆｅ−Ｍｎ合金等の金属から成り、これらの板材にプレス加工や打ち抜き加工等の周知の金属加工方法を施すことによって作製される。蓋体６は、基体１の材料と同程度の熱膨張係数を有するものが好ましく、基体１の材料と同じものを用いるのがより好ましい。蓋体６が窓を有する場合は、電子部品５と対向する部分に孔を設けたものに、平板状やレンズ状のガラス製の窓部材を低融点ガラスなどにより接合する。   The lid 6 is made of a metal such as an Fe—Ni—Co alloy, an Fe—Ni alloy, or an Fe—Mn alloy, and is produced by subjecting these plate materials to a known metal working method such as press working or punching. . The lid 6 preferably has the same thermal expansion coefficient as the material of the base 1, and more preferably the same as the material of the base 1. When the lid 6 has a window, a plate-like or lens-like glass window member is joined to a member provided with a hole in the portion facing the electronic component 5 with a low melting point glass or the like.

蓋体６の基体１の接合部１ｂへの接合は、シーム溶接やＹＡＧレーザ溶接等の溶接またはＡｕ−Ｓｎろう材等のろう材によるろう付け等のろう接により行なわれる。   The lid body 6 is joined to the joint portion 1b of the base body 1 by welding such as seam welding or YAG laser welding or brazing using a brazing material such as an Au-Sn brazing material.

本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図であるIt is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図であるIt is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. （ａ）は、図９のＡ部を拡大した断面図であり、（ｂ）および（ｃ）は（ａ）と同様に他の例を示す拡大した断面図である。(A) is sectional drawing to which the A section of FIG. 9 was expanded, (b) and (c) are expanded sectional views which show another example similarly to (a). 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 従来の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the conventional electronic component mounting package.

符号の説明Explanation of symbols

１・・・・・基体
１ａ・・・・搭載部
１ｂ・・・・接合部
１ｃ・・・・貫通孔
２・・・・・封止材
３・・・・・信号端子
４・・・・・接地端子
５・・・・・電子部品
５ａ・・・・回路基板
６・・・・・蓋体
７・・・・・ボンディングワイヤ
８・・・・・接合材 DESCRIPTION OF SYMBOLS 1 ... Base | substrate 1a ... Mounting part 1b ... Joint part 1c ... Through-hole 2 ... Sealing material 3 ... Signal terminal 4 ...・ Ground terminal 5 ... Electronic component 5a ... Circuit board 6 ... Cover 7 ... Bonding wire 8 ... Bonding material

Claims (6)

上面の外周領域に蓋体を溶接またはろう接により接合する接合部およびその内側に電子部品の搭載部を有するとともに上面から下面にかけて複数の貫通孔を有する基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子とを具備した電子部品搭載用パッケージであって、前記貫通孔は、前記基体の上面側の開口が前記基体の下面側の開口より前記基体の中心側に位置するように前記基体を斜めに貫通していることを特徴とする電子部品搭載用パッケージ。 A base part having a joint part for joining the lid body by welding or brazing to the outer peripheral area of the upper surface and a mounting part for electronic components inside thereof and having a plurality of through holes from the upper surface to the lower surface, and a seal filled in the through holes An electronic component mounting package comprising a signal terminal that is fixed through a stopper, wherein the opening on the upper surface side of the base body is closer to the center side of the base body than the opening on the lower surface side of the base body An electronic component mounting package characterized in that the base body is obliquely penetrated so as to be located at the position. 前記信号端子は、前記貫通孔の中心を通っていることを特徴とする請求項１記載の電子部品搭載用パッケージ。 The electronic component mounting package according to claim 1, wherein the signal terminal passes through a center of the through hole. 前記搭載部は、前記基体の上面から突出した突出部の側面に搭載面を有するとともに、前記信号端子の前記上面から突出した端部は前記搭載面に沿っていることを特徴とする請求項１または請求項２に記載の電子部品搭載用パッケージ。 The mounting portion has a mounting surface on a side surface of the protruding portion protruding from the upper surface of the base body, and an end portion of the signal terminal protruding from the upper surface is along the mounting surface. Or the package for electronic component mounting of Claim 2. 前記貫通孔は、前記基体の下面から上面にかけて内径が小さくなっていることを特徴とする請求項１乃至請求項３のいずれかに記載の電子部品搭載用パッケージ。 The electronic component mounting package according to any one of claims 1 to 3, wherein the through hole has an inner diameter that decreases from a lower surface to an upper surface of the base body. 前記信号端子は、前記貫通孔内において前記基体の下面から上面にかけて径が小さくなっていることを特徴とする請求項１乃至請求項４のいずれかに記載の電子部品搭載用パッケージ。 5. The electronic component mounting package according to claim 1, wherein a diameter of the signal terminal decreases from a lower surface to an upper surface of the base in the through hole. 請求項１乃至請求項５のいずれかに記載の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記基体の前記接合部に蓋体を接合したことを特徴とする電子装置。 6. An electronic device comprising: an electronic component mounted on the mounting portion of the electronic component mounting package according to claim 1; and a lid member bonded to the bonding portion of the base.
JP2008007623A 2007-07-27 2008-01-17 Package for mounting electronic component, and electronic equipment using the same Pending JP2009054982A (en)

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Cited By (5)

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Publication number Priority date Publication date Assignee Title
JP2011134740A (en) * 2009-12-22 2011-07-07 Kyocera Corp Package for mounting electronic component, and electronic device using the same
JP2012074645A (en) * 2010-09-30 2012-04-12 Seiko Instruments Inc Package, package manufacturing method and piezoelectric vibrator
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Cited By (8)

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Publication number Priority date Publication date Assignee Title
JP2011134740A (en) * 2009-12-22 2011-07-07 Kyocera Corp Package for mounting electronic component, and electronic device using the same
JP2012074645A (en) * 2010-09-30 2012-04-12 Seiko Instruments Inc Package, package manufacturing method and piezoelectric vibrator
JP2016103657A (en) * 2013-01-18 2016-06-02 ショット アクチエンゲゼルシャフトＳｃｈｏｔｔ ＡＧ Transistor outline housing and method for producing the same
WO2016084936A1 (en) * 2014-11-28 2016-06-02 京セラ株式会社 Saw device and method for manufacturing saw device
CN107004641A (en) * 2014-11-28 2017-08-01 京瓷株式会社 The manufacture method of SAW device and SAW device
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