JP2010090454A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
- Publication number
- JP2010090454A JP2010090454A JP2008263193A JP2008263193A JP2010090454A JP 2010090454 A JP2010090454 A JP 2010090454A JP 2008263193 A JP2008263193 A JP 2008263193A JP 2008263193 A JP2008263193 A JP 2008263193A JP 2010090454 A JP2010090454 A JP 2010090454A
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- film
- substrate
- irradiation
- oil
- forming method
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 185
- 238000000034 method Methods 0.000 claims description 106
- 239000007789 gas Substances 0.000 claims description 83
- 230000015572 biosynthetic process Effects 0.000 claims description 54
- 238000004544 sputter deposition Methods 0.000 claims description 54
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 46
- 239000002245 particle Substances 0.000 claims description 39
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
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- OKIYQFLILPKULA-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4-nonafluoro-4-methoxybutane Chemical compound COC(F)(F)C(F)(F)C(F)(F)C(F)(F)F OKIYQFLILPKULA-UHFFFAOYSA-N 0.000 description 1
- SJBBXFLOLUTGCW-UHFFFAOYSA-N 1,3-bis(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC(C(F)(F)F)=C1 SJBBXFLOLUTGCW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
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- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
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- 150000003973 alkyl amines Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 239000004210 ether based solvent Substances 0.000 description 1
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- 125000001165 hydrophobic group Chemical group 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- 229940104873 methyl perfluorobutyl ether Drugs 0.000 description 1
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- FYJQJMIEZVMYSD-UHFFFAOYSA-N perfluoro-2-butyltetrahydrofuran Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C1(F)OC(F)(F)C(F)(F)C1(F)F FYJQJMIEZVMYSD-UHFFFAOYSA-N 0.000 description 1
- LGUZHRODIJCVOC-UHFFFAOYSA-N perfluoroheptane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LGUZHRODIJCVOC-UHFFFAOYSA-N 0.000 description 1
- YVBBRRALBYAZBM-UHFFFAOYSA-N perfluorooctane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YVBBRRALBYAZBM-UHFFFAOYSA-N 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- AQZYBQIAUSKCCS-UHFFFAOYSA-N perfluorotripentylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AQZYBQIAUSKCCS-UHFFFAOYSA-N 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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Abstract
【解決手段】 成膜方法は、基板101の表面にエネルギーを持つ粒子を照射する第1の照射工程と、前記第1の照射工程後の基板101の表面に乾式法を用いて第1の膜103を成膜する第1の成膜工程と、第1の膜103の表面に撥油性を有する第2の膜105を成膜する第2の成膜工程とを、有する。
【選択図】 図7
Description
本実施形態では、上記発明の成膜方法により得られる撥油性基材の一例を説明する。
《成膜装置》
本実施形態では、図1の撥油性基材100を製造可能な成膜装置の一例を説明する。本実施形態の成膜装置は、上記発明の成膜方法を実現することができる。
次に、成膜装置1を用いた成膜方法の一例を説明する。
金属繊維又は細線の塊に疎水性反応性有機化合物を含浸させたものを用いることができる。これらは、多量の疎水性反応性有機化合物を素早く吸収し、蒸発させることができる。多孔質セラミックは、ハンドリング性の観点からペレット状で用いることが好ましい。
《成膜装置》
本実施形態では、図1の撥油性基材100を製造可能な成膜装置の他の例を説明する。なお、第2実施形態と同一の部材には同一の符号を付してその説明を省略する。本実施形態の成膜装置によっても、上記発明の成膜方法を実現することができる。
図3に戻り、真空容器2の鉛直方向(X方向)の測方には、回転ドラム4へ面した位置に仕切壁12が立設されている。仕切壁12は、真空容器2と同じステンレススチール製の部材である。仕切壁12は、上下左右に一つずつ配設された平板部材により構成されており、真空容器2の内壁面から回転ドラム4に向けて四方を囲んだ状態となっている。これにより、スパッタ領域80Aが真空容器2の内部で区画される。
図3に戻り、真空容器2の鉛直方向(X方向)に配置される上内壁には、回転ドラム4へ面した位置に、仕切壁14が立設されている。仕切壁14は、例えば真空容器2と同じ構成部材であるステンレススチールなどで構成される。仕切壁14は、上下左右に一つずつ配設された平板部材により構成されており、真空容器2の上内壁面から回転ドラム4に向けて四方を囲んだ状態となっている。これにより、プラズマ処理領域60Aが真空容器2の内部で区画される。このように本実施形態では、回転ドラム4を挟んで、蒸着処理領域30Aとは反対の方向(真空チャンバ2の鉛直方向の上方。略180°の方向)で、かつスパッタ領域80Aとは略90°隔て、蒸着処理領域30A及びスパッタ領域80Aの何れとも空間的に分離された位置に、プラズマ処理領域60Aが設けられている。
図3に戻り、真空容器2の鉛直方向(X方向)の下方には、蒸着処理領域30Aが設けられている。蒸着処理領域30Aは、基板101の表面に形成された第1の膜103の表面に、蒸着法により撥油性膜105を形成する領域である。
次に、成膜装置1aを用いた成膜方法の一例を説明する。
本例では、イオンビームアシスト蒸着を行う構成の図2に示す成膜装置1を準備し、表1に示す条件で成膜して撥油性基材サンプルを得た。
本例では、マグネトロンスパッタを行う構成の図3〜図6に示す成膜装置1aを準備し、表2に示す条件で成膜して撥油性基材サンプルを得た。
得られた撥油性基材サンプルの撥油性膜105の表面に、1cm2 のスチールウール#0000を載せ、1kg/cm2 の荷重をかけた状態で、50mmの直線上を1往復1秒の速さで、擦傷試験を行った。この擦傷試験の往復100回毎に、試験面(撥油性膜105面)に、油性マジックペン(有機溶媒型マーカー、商品名:マッキー極細、セブラ社製)で線を描き、油性マジックペンの有機溶媒型インクを乾燥布で拭き取れるか否かを評価した。その結果、有機溶媒型インクを拭き取ることができた最大擦傷往復回数は、上述した表1及び表2に示す通りであった。
表1より、実験例5のサンプルと比較して、実験例1,2,7,8のサンプルの有用性が確認できた。中でも、第2の成膜(抵抗加熱蒸着)に先立ち、SiO2 薄膜の表面に第2の照射(後照射)を所定時間で施した場合(実験例7,8)、これを施さなかった場合(実験例1,2)と比較して、最大擦傷往復回数が大幅に増加することが確認できた。前照射の時間を10分から5分に短縮した場合、最大擦傷往復回数が2200回に減少したが(実験例8)、この状態でも十分な最大擦傷往復回数が認められる。第1の照射(前照射)条件を変更させても、実験例1,2と略同様の評価が得られることも確認できた(実験例4,5)。なお、SiO2 薄膜を成膜せず、第1の照射後の基板101の表面に撥油性膜105を成膜した場合(実験例3)、SiO2 薄膜を成膜した場合(実験例1)と比較して最大擦傷往復回数が700回に減少したが、実験例6と比較すれば(300回)、十分な最大擦傷往復回数が得られることが確認できた。
Claims (20)
- 基板の表面に、エネルギーを持つ粒子を照射する第1の照射工程と、
前記第1の照射工程後の前記基板の表面に、乾式法を用いて第1の膜を成膜する第1の成膜工程と、
前記第1の膜の表面に、撥油性を有する第2の膜を成膜する第2の成膜工程とを、有する成膜方法。 - 請求項1記載の成膜方法において、
前記第1の照射工程では、加速電圧が100〜2000Vのエネルギーを持つ粒子を用いることを特徴とする成膜方法。 - 請求項1又は2記載の成膜方法において、
前記第1の照射工程では、電流密度が1〜120μA/cm2 のエネルギーを持つ粒子を用いることを特徴とする成膜方法。 - 請求項1〜3の何れか一項記載の成膜方法において、
前記第1の照射工程では、前記粒子を60〜1200秒、照射することを特徴とする成膜方法。 - 請求項1〜4の何れか一項記載の成膜方法において、
前記第1の照射工程では、前記粒子を5×1014個/cm2 〜5×1017個/cm2 の数で照射することを特徴とする成膜方法。 - 請求項1〜5の何れか一項記載の成膜方法において、
前記粒子は、少なくともアルゴン又は酸素を含むイオンビームであることを特徴とする成膜方法。 - 請求項1〜6の何れか一項記載の成膜方法において、
前記第1の成膜工程では、イオンビームを用いたイオンアシスト蒸着法により前記第1の膜を成膜することを特徴とする成膜方法。 - 請求項7記載の成膜方法において、
前記第1の成膜工程では、加速電圧が100〜2000Vのイオンビームを用いることを特徴とする成膜方法。 - 請求項7又は8記載の成膜方法において、
前記第1の成膜工程では、電流密度が1〜120μA/cm2 のイオンビームを用いる照射することを特徴とする成膜方法。 - 請求項7〜9の何れか一項記載の成膜方法において、
前記第1の成膜工程では、前記イオンビームを1〜800秒、照射することを特徴とする成膜方法。 - 請求項7〜10の何れか一項記載の成膜方法において、
前記第1の成膜工程では、前記イオンビームを1×1013個/cm2 〜5×1016個/cm2 の数で照射することを特徴とする成膜方法。 - 請求項7〜11の何れか一項記載の成膜方法において、
前記イオンアシスト蒸着法に用いるイオンビームが、酸素、アルゴン又は酸素とアルゴンの混合ガスのイオンビームであることを特徴とする成膜方法。 - 請求項1〜6の何れか一項記載の成膜方法において、
前記第1の成膜工程では、スパッタ処理とプラズマ処理を繰り返すことにより前記第1の膜を成膜することを特徴とする成膜方法。 - 基板の表面に、エネルギーを持つ粒子を照射する照射工程と、
前記照射工程後の前記基板の表面に、撥油性を有する膜を成膜する成膜工程とを、有する成膜方法。 - 請求項1〜13の何れか一項記載の成膜方法において、
前記第2の成膜工程に先立ち、前記第1の膜に、エネルギーを持つ粒子を照射する第2の照射工程を有することを特徴とする成膜方法。 - 請求項15記載の成膜方法において、
前記第2の照射工程では、加速電圧が100〜2000Vのエネルギーを持つ粒子を用いることを特徴とする成膜方法。 - 請求項15又は16記載の成膜方法において、
前記第2の照射工程では、電流密度が1〜120μA/cm2 のエネルギーを持つ粒子を用いることを特徴とする成膜方法。 - 請求項15〜17の何れか一項記載の成膜方法において、
前記第2の照射工程では、前記粒子を1〜800秒、照射することを特徴とする成膜方法。 - 請求項15〜18の何れか一項記載の成膜方法において、
前記第2の照射工程では、前記粒子を1013個/cm2 〜5×1017個/cm2 の数で照射することを特徴とする成膜方法。 - 請求項15〜19の何れか一項記載の成膜方法において、
前記第2の照射工程で用いるエネルギーを持つ粒子が、少なくともアルゴンを含むイオンビームであることを特徴とする成膜方法。
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JP4906014B1 (ja) * | 2011-09-30 | 2012-03-28 | 株式会社シンクロン | 成膜方法及び成膜装置 |
WO2013047605A1 (ja) | 2011-09-30 | 2013-04-04 | 株式会社シンクロン | 成膜方法及び成膜装置 |
WO2013105242A1 (ja) * | 2012-01-12 | 2013-07-18 | 株式会社シンクロン | 防汚膜の成膜方法 |
WO2013105243A1 (ja) * | 2012-01-12 | 2013-07-18 | 株式会社シンクロン | 防汚膜の成膜方法 |
JP5638147B2 (ja) * | 2011-09-30 | 2014-12-10 | 株式会社シンクロン | 成膜方法及び成膜装置 |
JPWO2015125498A1 (ja) * | 2014-02-24 | 2017-03-30 | キヤノンオプトロン株式会社 | 防汚膜付光学部材およびタッチパネル式ディスプレイ |
WO2018190269A1 (ja) | 2017-04-10 | 2018-10-18 | 株式会社シンクロン | 成膜装置及び成膜方法 |
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JP4688230B2 (ja) | 2011-05-25 |
KR101057209B1 (ko) | 2011-08-16 |
EP2336384A4 (en) | 2013-09-11 |
KR20110066900A (ko) | 2011-06-17 |
CN102124136B (zh) | 2013-05-29 |
TWI359204B (ja) | 2012-03-01 |
HK1157827A1 (en) | 2012-07-06 |
CN102124136A (zh) | 2011-07-13 |
US9365920B2 (en) | 2016-06-14 |
TW201016876A (en) | 2010-05-01 |
WO2010041524A1 (ja) | 2010-04-15 |
US20110151138A1 (en) | 2011-06-23 |
EP2336384A1 (en) | 2011-06-22 |
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