JP2010087491A - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
- Publication number
- JP2010087491A JP2010087491A JP2009201706A JP2009201706A JP2010087491A JP 2010087491 A JP2010087491 A JP 2010087491A JP 2009201706 A JP2009201706 A JP 2009201706A JP 2009201706 A JP2009201706 A JP 2009201706A JP 2010087491 A JP2010087491 A JP 2010087491A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- semiconductor
- region
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 143
- 239000004065 semiconductor Substances 0.000 claims abstract description 596
- 239000012535 impurity Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 239000013078 crystal Substances 0.000 claims description 219
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 144
- 229910052757 nitrogen Inorganic materials 0.000 claims description 72
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 60
- 229910052736 halogen Inorganic materials 0.000 claims description 31
- 150000002367 halogens Chemical class 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims description 11
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 972
- 239000007789 gas Substances 0.000 description 113
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 89
- 238000000034 method Methods 0.000 description 75
- 230000015572 biosynthetic process Effects 0.000 description 74
- 229910052581 Si3N4 Inorganic materials 0.000 description 59
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 59
- 239000000463 material Substances 0.000 description 58
- 238000000151 deposition Methods 0.000 description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 56
- 238000012545 processing Methods 0.000 description 56
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- 239000011574 phosphorus Substances 0.000 description 39
- 238000005530 etching Methods 0.000 description 28
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- 239000001257 hydrogen Substances 0.000 description 27
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 20
- 239000010408 film Substances 0.000 description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 14
- 229910052750 molybdenum Inorganic materials 0.000 description 14
- 239000011733 molybdenum Substances 0.000 description 14
- 229910052732 germanium Inorganic materials 0.000 description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 239000011737 fluorine Substances 0.000 description 11
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- 239000003990 capacitor Substances 0.000 description 10
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- 239000011241 protective layer Substances 0.000 description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 9
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 238000009616 inductively coupled plasma Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
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- 150000002431 hydrogen Chemical class 0.000 description 7
- 239000013081 microcrystal Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000004756 silanes Chemical class 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
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- 238000002834 transmittance Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
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- 238000011161 development Methods 0.000 description 4
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- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
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- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- MZJUGRUTVANEDW-UHFFFAOYSA-N bromine fluoride Chemical compound BrF MZJUGRUTVANEDW-UHFFFAOYSA-N 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- OMRRUNXAWXNVFW-UHFFFAOYSA-N fluoridochlorine Chemical compound ClF OMRRUNXAWXNVFW-UHFFFAOYSA-N 0.000 description 2
- GGJOARIBACGTDV-UHFFFAOYSA-N germanium difluoride Chemical compound F[Ge]F GGJOARIBACGTDV-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- PDJAZCSYYQODQF-UHFFFAOYSA-N iodine monofluoride Chemical compound IF PDJAZCSYYQODQF-UHFFFAOYSA-N 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- JFWWLEIVWNPOAL-UHFFFAOYSA-N [Ge].[Si].[Ge] Chemical compound [Ge].[Si].[Ge] JFWWLEIVWNPOAL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】基板上に、ゲート電極層と、半導体層と、ゲート電極層及び半導体層の間に設けられるゲート絶縁層と、半導体層に接するソース領域及びドレイン領域と、ソース領域に接するソース電極と、ドレイン領域に接するドレイン電極とを有する。さらに、ソース領域及びドレイン領域は、一導電型を付与する不純物が添加された微結晶半導体層で形成され、半導体層において、ソース領域及びドレイン領域と接する領域は結晶領域で形成されている。さらに、半導体層における結晶領域は、バックチャネル領域に形成されておらず分離されているため、対をなす。さらに、半導体層において、非晶質半導体を含む。
【選択図】図1
Description
図1は、本実施の形態にかかる薄膜トランジスタの断面図を示す。図1(A)に示す薄膜トランジスタは、基板101上に、ゲート電極層103と、半導体層129と、ゲート電極層103及び半導体層129の間に設けられるゲート絶縁層105と、半導体層129に接するソース領域127s及びドレイン領域127dと、ソース領域127sに接するソース電極層125sと、ドレイン領域127dに接するドレイン電極層125dとを有する。さらに、ソース領域127s及びドレイン領域127dは、一導電型を付与する不純物が添加された微結晶半導体層で形成され、半導体層129において、ソース領域127s及びドレイン領域127dと接する領域は結晶領域129b、129cで形成されていることを特徴とする。さらに、半導体層129における結晶領域129b、129cは、バックチャネル領域に形成されておらず分離されているため、対をなす。さらに、半導体層129において、非晶質半導体を含む半導体層129aを有すること特徴とする。
本実施の形態では、半導体層において、非晶質半導体を含む半導体層129aと、結晶領域129b、129cの界面における結晶性を高めることが可能な構造について、図3及び図4を用いて示す。
本実施の形態では、実施の形態1及び実施の形態2に適用可能な構造について、図5を用いて示す。
本実施の形態では、実施の形態1に示す薄膜トランジスタの作製方法について、図6及び図7を用いて示す。薄膜トランジスタは、p型よりもn型の方が、キャリアの移動度が高い。また、同一の基板上に形成する薄膜トランジスタを全て同じ極性に統一すると、工程数を抑えることができ、好ましい。そのため、本実施の形態では、n型の薄膜トランジスタの作製方法について説明する。
本実施の形態では、実施の形態4において、ゲート絶縁層105、非晶質半導体を含む半導体層107a、及び結晶領域107bの形成方法の代わりに用いることが可能な形成方法について以下に示す。
本実施の形態では、実施の形態5において、ゲート絶縁層105、非晶質半導体を含む半導体層107a、及び結晶領域107bの形成方法の代わりに用いることが可能な形成方法について以下に示す。
本実施の形態では、実施の形態5において、ゲート絶縁層105、非晶質半導体を含む半導体層107a、及び結晶領域107bの形成方法の代わりに用いることが可能な形成方法について以下に示す。
本実施の形態では、実施の形態1の図1(B)に示す薄膜トランジスタの作製工程について、図13を用いて示す。
本実施の形態では、実施の形態1の図3(A)に示す薄膜トランジスタの作製工程について、図15を用いて示す。
本実施の形態では、実施の形態1の図3(A)に示す薄膜トランジスタの作製工程について、実施の形態8とは異なる方法について、図17を用いて示す。
本実施の形態では、実施の形態1の図5に示す薄膜トランジスタの作製工程について、図18及び図19を用いて示す。
本実施の形態では、しきい値電圧の制御が可能な薄膜トランジスタの構造について説明する。
本実施の形態では、実施の形態1乃至12で示す薄膜トランジスタを用いることが可能な、素子基板、及び当該素子基板を有する表示装置について、以下に示す。表示装置としては、液晶表示装置、発光表示装置、電子ペーパー等があるが、上記実施の形態に示す薄膜トランジスタは他の表示装置の素子基板にも用いることができる。ここでは、上記実施の形態1で示す薄膜トランジスタを有する液晶表示装置、代表的には、VA(Vertical Alignment)型の液晶表示装置について、図24及び図25を用いて説明する。
実施の形態13で示す素子基板313において、配向膜311を形成せず、発光素子を設けることにより、当該素子基板を発光表示装置や、発光装置に用いることができる。発光表示装置や発光装置は、発光素子として代表的には、エレクトロルミネッセンスを利用する発光素子がある。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって大別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
上記実施の形態に係る薄膜トランジスタを有する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、電子ペーパー、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。特に、実施の形態13及び実施の形態14で示したように、上記実施の形態に係る薄膜トランジスタを液晶表示装置、発光装置、電気泳動方式表示装置などに適用することにより、電子機器の表示部に用いることができる。以下に具体的に例示する。
Claims (10)
- 基板上に形成されるゲート電極層と、
非晶質半導体を含む半導体層、及び一対の結晶領域を有する半導体層と、
前記ゲート電極層及び前記非晶質半導体を含む半導体層の間に設けられるゲート絶縁層と、
前記一対の結晶領域に接し、且つ一導電型を付与する不純物が添加された微結晶半導体層で形成されるソース領域及びドレイン領域と、
前記ソース領域に接するソース電極層と、前記ドレイン領域に接するドレイン電極層と、を有することを特徴とする薄膜トランジスタ。 - 請求項1において、ソース領域及びドレイン領域と、前記非晶質半導体を含む半導体層との間に、ハロゲン元素を含む微結晶半導体層を有することを特徴とする薄膜トランジスタ。
- 請求項1または2において、前記ゲート絶縁層と、前記非晶質半導体を含む半導体層半導体層の間に、微結晶半導体層を有することを特徴とする薄膜トランジスタ。
- 請求項1乃至3のいずれか一項において、前記結晶領域は柱状結晶粒を有することを特徴とする薄膜トランジスタ。
- 請求項1乃至3のいずれか一項において、前記結晶領域は、前記結晶領域が堆積される方向に向けて略放射状に成長した逆錐形の結晶粒を有することを特徴とする薄膜トランジスタ。
- 請求項1乃至5のいずれか一項において、前記非晶質半導体を含む半導体層は、アモルファスシリコン層またはアモルファスシリコンゲルマニウム層であることを特徴とする薄膜トランジスタ。
- 請求項1乃至5のいずれか一項において、前記非晶質半導体を含む半導体層は、窒素を有することを特徴とする薄膜トランジスタ。
- 請求項7において、前記非晶質半導体を含む半導体層の窒素濃度は、1×1020cm−3以上1×1021cm−3以下であることを特徴とする薄膜トランジスタ。
- 請求項1乃至請求項8のいずれか一項において、前記非晶質半導体を含む半導体層は、粒径が1nm以上10nm以下の結晶粒を有することを有することを特徴とする薄膜トランジスタ。
- 請求項1乃至請求項9のいずれか一項において、前記非晶質半導体を含む半導体層半導体層は、二次イオン質量分析法によって計測される酸素濃度が、5×1018cm−3以下であることを特徴とする薄膜トランジスタ。
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KR101446251B1 (ko) * | 2007-08-07 | 2014-10-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 이 표시 장치를 구비한 전자기기 및 그 제조 방법 |
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Cited By (7)
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JP2012033903A (ja) * | 2010-07-02 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 半導体膜の作製方法、半導体装置の作製方法、及び光電変換装置の作製方法 |
US9443989B2 (en) | 2010-07-02 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device |
US9450139B2 (en) | 2010-07-02 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device |
WO2013001676A1 (ja) * | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
US8841673B2 (en) | 2011-06-30 | 2014-09-23 | Panasonic Corporation | Thin-film transistor device and method for manufacturing thin-film transistor device |
JPWO2013001676A1 (ja) * | 2011-06-30 | 2015-02-23 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
JP2019537282A (ja) * | 2016-11-16 | 2019-12-19 | 深▲せん▼市華星光電技術有限公司Shenzhen China Star Optoelectronics Technology Co., Ltd. | アレイ基板とその製造方法及び表示装置 |
Also Published As
Publication number | Publication date |
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US20100059749A1 (en) | 2010-03-11 |
CN101667599A (zh) | 2010-03-10 |
KR20100029039A (ko) | 2010-03-15 |
TWI469355B (zh) | 2015-01-11 |
CN101667599B (zh) | 2015-05-13 |
US8283667B2 (en) | 2012-10-09 |
KR101663965B1 (ko) | 2016-10-12 |
JP5525215B2 (ja) | 2014-06-18 |
TW201027751A (en) | 2010-07-16 |
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