JP2010028125A - Cmp研磨剤及び研磨方法 - Google Patents
Cmp研磨剤及び研磨方法 Download PDFInfo
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- JP2010028125A JP2010028125A JP2009204707A JP2009204707A JP2010028125A JP 2010028125 A JP2010028125 A JP 2010028125A JP 2009204707 A JP2009204707 A JP 2009204707A JP 2009204707 A JP2009204707 A JP 2009204707A JP 2010028125 A JP2010028125 A JP 2010028125A
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- polishing
- group
- water
- film
- abrasive
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Abstract
【解決手段】 酸化セリウム粒子、分散剤、水溶性高分子および水を含有し、前記水溶性高分子がアクリルアミド、メタアクリルアミドおよびそれらのα−置換体からなる群のいずれかの、N−モノ置換体およびN,N−ジ置換体のいずれかの骨格を有する化合物であるCMP研磨剤であり、好ましくは、該研磨剤100重量部に対して前記水溶性高分子が0.01重量部以上10重量部以下である。
【選択図】なし
Description
上記の方法により製造された酸化セリウム粒子は凝集しているため、機械的に粉砕することが好ましい。粉砕方法として、ジェットミル等による乾式粉砕や遊星ビーズミル等による湿式粉砕方法が好ましい。ジェットミルは、例えば化学工業論文集第6巻第5号(1980)527〜532頁に説明されている。
また、分散剤として、半導体製造に係る基板研磨に使用することから、ナトリウムイオン、カリウムイオン等のアルカリ金属及びハロゲン、イオウの含有率は10ppm以下に抑えることが好ましく、例えば、重合性単量体成分としてアクリル酸アンモニウム塩を含む高分子分散剤が好ましい。また、重合性単量体成分としてアクリル酸アンモニウム塩を含む高分子分散剤と水溶性陰イオン性分散剤、水溶性非イオン性分散剤、水溶性陽イオン性分散剤、水溶性両性分散剤から選ばれた少なくとも1種類を含む2種類以上の分散剤を使用してもよい。
これらの酸化セリウム粒子を水中に分散させる方法としては、通常の攪拌機による分散処理の他にホモジナイザー、超音波分散機、湿式ボールミル等を用いることができる。
なお、本発明において、酸化セリウム粒子の平均粒径は、必要に応じてスラリーを適当な濃度に希釈し、レーザ回折式粒度分布計で測定し、粒子径の中央値を採用する。
水溶性高分子は、ラジカル重合等によって得られる重量平均分子量が500以上である化合物が好ましい。
上式(II)中、R1は式(I)のR1と共通でありすなわち水素原子、メチル基、フェニル基、ベンジル基、クロル基、ジフルオロメチル基、トリフルオロメチル基またはシアノ基を示し、R4はモルホリノ基、チオモルホリノ基、ピロリジノ基またはピペリジノ基を示す。
N,N−ジメチルアクリルアミド、N,N−ジエチルアクリルアミド、N,N−ジプルピルアクリルアミド、N,N−ジイソプロピルアクリルアミド、N,N−ジブチルアクリルアミド、N,N−ジイソブチルアクリルアミド、N,N−ジターシャリブチルアクリルアミド、N,N−ジヘプチルアクリルアミド、N,N−ジオクチルアクリルアミド、N,N−ジターシャリオクチルアクリルアミド、N,N−ジドデシルアクリルアミド、N,N−ジオクタデシルアクリルアミド、N,N−ジメチロールアクリルアミド、N,N−ジアセチルアクリルアミド、N,N−ジジアセトンアクリルアミド、N,N−ジメチルメタクリルアミド、N,N−ジエチルメタクリルアミド、N,N−ジプルピルメタクリルアミド、N,N−ジイソプロピルメタクリルアミド、N,N−ジブチルメタクリルアミド、N,N−ジイソブチルメタクリルアミド、N,N−ジターシャリブチルメタクリルアミド、N,N−ジヘプチルメタクリルアミド、N,N−ジオクチルメタクリルアミド、N,N−ジターシャリオクチルメタクリルアミド、N,N−ジドデシルメタクリルアミド、N,N−ジオクタデシルメタクリルアミド、N,N−ジメチロールメタクリルアミド、N,N−ジアセチルメタクリルアミド、N,N−ジジアセトンメタクリルアミド、アクリロイルピペリジン、アクリロイルモルホリン、アクリロイルチオモルホリン、アクリロイルピロリジン等のN,N−ジ置換体骨格を有する化合物を例示することができる。これらは、1種単独または2種以上組み合わせて用いることができる。
本発明におけるpHは、平坦性の点で6〜9が好ましい。pHは酸や、アンモニア、テトラメチルアンモニウムヒドロキシド等のアルカリ成分によって調整可能である。
炭酸セリウム水和物2kgを白金製容器に入れ、800℃で2時間空気中で焼成することにより黄白色の粉末を約1kg得た。この粉末をX線回折法で相同定を行ったところ酸化セリウムであることを確認した。焼成粉末粒子径は30〜100μmであった。焼成粉末粒子表面を走査型電子顕微鏡で観察したところ、酸化セリウムの粒界が観察された。粒界に囲まれた酸化セリウム一次粒子径を測定したところ、体積分布の中央値が190nm、最大値が500nmであった。
(合成例1)
脱イオン水400部を2リットルのフラスコに投入し、窒素ガス雰囲気下で撹拌しながら90℃に昇温後、N,N−ジメチルアクリルアミド100部に重合開始剤(和光純薬工業株式会社製、商品名「V−085」)1部を溶解させたものを1時間かけてフラスコ中に注入した。その後90℃で5時間保温後、室温まで冷却して取り出して水溶性高分子溶液を得た。
アクリロイルモルホリン95部、アクリル酸5部を合成例1と同様の条件で重合させ、室温まで冷却後、アンモニア水でpH:7.8に調整して水溶性高分子溶液を得た。
N−イソプロピルアクリルアミド95部、アクリル酸5部を合成例1と同様の条件で重合させ、室温まで冷却後、アンモニア水でpH:7.5に調整して水溶性高分子溶液を得た。
(実施例1:研磨剤例1)
上記作製の酸化セリウム粒子1kgとポリアクリル酸アンモニウム塩水溶液(40重量%)23gと脱イオン水8977gを混合し、撹拌しながら超音波分散を10分間施した。得られたスラリーを1ミクロンフィルターでろ過をし、さらに脱イオン水を加えて5重量%の酸化セリウムスラリーを得た。
スラリーのpHは8.3であった。スラリー粒子をレーザ回折式粒度分布計で測定するために、適当な濃度に希釈して測定した結果、粒子径の中央値が190nmであった。
水溶性高分子溶液として、合成例2の溶液を用いた以外は、研磨剤例1と同様の方法で調整および評価した。研磨剤pHは7.8、また、研磨剤中の粒子をレーザ回折式粒度分布計で測定するために、適当な濃度に希釈して測定した結果、粒子径の中央値がいずれも190nmであった。
水溶性高分子溶液として、合成例3の溶液を用いた以外は、研磨剤例1および2と同様の方法で調整および評価した。研磨剤pHは7.5、また、研磨剤中の粒子をレーザ回折式粒度分布計で測定するために、適当な濃度に希釈して測定した結果、粒子径の中央値がいずれも190nmであった。
(実施例1:研磨例1)
直径200mmのSi基板上にLine/Space幅が0.05〜5mmで高さが1000nmのAl配線Line部を形成した後、その上にTEOS−プラズマCVD法で酸化珪素膜を2000nm形成したパターンウエハを作製した。
上記で作製したパターンウエハ(以下、ウエハともいう。)を、研磨装置の、保持する基板取り付け用の吸着パッドを貼り付けたホルダーにセットした。多孔質ウレタン樹脂製の研磨パッド(研磨布)を貼り付けた直径600mmの研磨定盤上に、ホルダーをウエハの絶縁膜(酸化珪素膜)面を下にして載せ、さらに加工荷重を29.4kPa(300gf/cm2)に設定した。
研磨剤例2の酸化セリウム研磨剤を用いた以外は、研磨例1と同様にしてパターンウエハを研磨した。研磨例1と同様に、光干渉式膜厚測定装置を用いて、研磨前後の膜厚差を測定し、研磨速度を計算した。Line/Space幅1mmのLine部分の研磨速度R1とLine/Space幅3mmのLine部分の研磨速度R3、及びLine/Space幅5mmのLine部分の研磨速度R5との研磨速度比R5/R1及びR3/R1は、研磨時間2〜4分の間は、研磨時間とともに値が大きくなり、研磨時間4〜6分ではほぼ一定であった。
研磨剤例3の酸化セリウム研磨剤を用いた以外は、研磨例1および2と同様にしてパターンウエハを研磨した。研磨例1および2と同様に、光干渉式膜厚測定装置を用いて、研磨前後の膜厚差を測定し、研磨速度を計算した。Line/Space幅1mmのLine部分の研磨速度R1とLine/Space幅3mmのLine部分の研磨速度R3、及びLine/Space幅5mmのLine部分の研磨速度R5との研磨速度比R5/R1及びR3/R1は、研磨時間2〜4分の間は、研磨時間とともに値が大きくなり、研磨時間4〜6分ではほぼ一定であった。
(酸化セリウム研磨剤の作製)
上記実施例1と同様にして5重量%酸化セリウムスラリーを得た。スラリーpHは8.3であった。この酸化セリウムスラリー(固形分:5重量%)600gと脱イオン水2400gを混合して、酸化セリウム研磨剤A(固形分:1重量%)を作製した。その研磨剤pHは7.4であり、また、研磨剤中の粒子をレーザ回折式粒度分布計で測定するために、適当な濃度に希釈して測定した結果、粒子径の中央値が190nmであった。
上記で作製した酸化セリウム研磨剤Aを研磨剤として使用し、かつ定盤及びウエハを50rpmで1分間回転させた以外は研磨例1〜3と同様にして、パターンウエハの絶縁膜を研磨した。研磨後のウエハを純水で良く洗浄後、乾燥した。
同様に、研磨時間を1.5分、2分にして上記パターンウエハの研磨を行った。
実施例の研磨例1〜3と同様に、光干渉式膜厚測定装置を用いて、研磨前後の膜厚差を測定し、研磨速度を計算した。
Claims (4)
- 酸化セリウム粒子、分散剤、水溶性高分子および水を含有し、前記水溶性高分子がアクリルアミド、メタアクリルアミドおよびそれらのα−置換体からなる群のいずれかの、N−モノ置換体およびN,N−ジ置換体のいずれかの骨格を有する化合物であるCMP研磨剤。
- 水溶性高分子の添加量が、研磨剤100重量部に対して0.01重量部以上10重量部以下である請求項1又は2記載のCMP研磨剤。
- 被研磨膜を形成した基板を研磨定盤の研磨布に押しあて加圧し、請求項1〜3のいずれか一項記載のCMP研磨剤を被研磨膜と研磨布との間に供給しながら、基板の被研磨膜と研磨布とを相対的に動かして被研磨膜を研磨する研磨方法。
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JP2015507356A (ja) * | 2011-12-21 | 2015-03-05 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 半導体装置の製造方法及びcmp組成物の使用方法 |
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JP5110058B2 (ja) | 2012-12-26 |
US20080214093A1 (en) | 2008-09-04 |
CN1745460A (zh) | 2006-03-08 |
CN100377310C (zh) | 2008-03-26 |
WO2004068570A1 (ja) | 2004-08-12 |
US7837800B2 (en) | 2010-11-23 |
US20110028073A1 (en) | 2011-02-03 |
KR100663781B1 (ko) | 2007-01-02 |
JPWO2004068570A1 (ja) | 2006-05-25 |
TWI276169B (en) | 2007-03-11 |
TW200425316A (en) | 2004-11-16 |
US20060148667A1 (en) | 2006-07-06 |
US7838482B2 (en) | 2010-11-23 |
KR20050095777A (ko) | 2005-09-30 |
US8168541B2 (en) | 2012-05-01 |
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