JP2009260029A - 半導体装置、および、その製造方法 - Google Patents
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- JP2009260029A JP2009260029A JP2008107072A JP2008107072A JP2009260029A JP 2009260029 A JP2009260029 A JP 2009260029A JP 2008107072 A JP2008107072 A JP 2008107072A JP 2008107072 A JP2008107072 A JP 2008107072A JP 2009260029 A JP2009260029 A JP 2009260029A
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- 239000004065 semiconductor Substances 0.000 title claims description 104
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 36
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- 239000010410 layer Substances 0.000 description 59
- 238000010586 diagram Methods 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000005468 ion implantation Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000000059 patterning Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 11
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】第1のフィンF1における閾値電圧Vthと、第2のフィンF2a,F2bにおける閾値電圧Vthと、第3のフィンF3a,F3bにおける閾値電圧Vthとのそれぞれが互いに異なるように、finFET100を形成する。
【選択図】図1
Description
(構成)
図1は、本発明の第1実施形態に係る半導体装置について、要部を模式的に示す平面図である。
本実施形態において、上記の半導体装置を製造する製造方法の要部に関して、説明する。
本発明の第2実施形態について説明する。
図18は、本発明の第2実施形態に係る半導体装置について、要部を示す平面図である。
本実施形態において、上記の半導体装置を製造する製造方法の要部に関して、説明する。
本発明の第3実施形態について説明する。
図24は、本発明の第3実施形態に係る半導体装置について、要部を示す平面図である。
本実施形態において、上記の半導体装置を製造する製造方法の要部に関して、説明する。
Claims (6)
- 少なくとも第1のフィンと第2のフィンとを含むフィン型電界効果トランジスタ
を有し、
前記フィン型電界効果トランジスタは、前記第1のフィンにおける閾値電圧と前記第2のフィンにおける閾値電圧とのそれぞれが、互いに異なっている
半導体装置。 - 前記第1のフィンと前記第2のフィンとのそれぞれは、基板の面にて第1方向に延在しており、前記第1方向に直交する第2方向にて規定される幅が、互いに異なっている、
請求項1に記載の半導体装置。 - 前記第1のフィンと前記第2のフィンとのそれぞれは、チャネル形成領域における不純物元素のドープ量が、互いに異なっている、
請求項1または2に記載の半導体装置。 - 前記第1のフィンにおけるゲート長と前記第2のフィンにおけるゲート長とのそれぞれが、互いに異なっている、
請求項1から3のいずれかに記載の半導体装置。 - 前記第1のフィンと前記第2のフィンとのそれぞれは、基板の面にて第1方向に延在しており、当該第2のフィンが複数設けられており、前記第1方向に直交する第2方向にて間隔を隔てて並んで配置されており、
当該第1のフィンと当該第2のフィンとのそれぞれが、前記第2方向にて対称に配置されている、
請求項1から4のいずれかに記載の半導体装置。 - 少なくとも第1のフィンと第2のフィンとを含むフィン型電界効果トランジスタを形成する工程
を有し、
当該フィン型電界効果トランジスタを形成する工程では、前記第1のフィンにおける閾値電圧と前記第2のフィンにおける閾値電圧とのそれぞれが、互いに異なるように、前記第1のフィンと前記第2のフィンとを設ける、
半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008107072A JP4518180B2 (ja) | 2008-04-16 | 2008-04-16 | 半導体装置、および、その製造方法 |
TW098107480A TWI414068B (zh) | 2008-04-16 | 2009-03-06 | 半導體裝置及其製造方法 |
US12/423,287 US7888751B2 (en) | 2008-04-16 | 2009-04-14 | Semiconductor device having a fin field effect transistor |
CN2009101327397A CN101562194B (zh) | 2008-04-16 | 2009-04-16 | 半导体装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008107072A JP4518180B2 (ja) | 2008-04-16 | 2008-04-16 | 半導体装置、および、その製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009260029A true JP2009260029A (ja) | 2009-11-05 |
JP4518180B2 JP4518180B2 (ja) | 2010-08-04 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2008107072A Active JP4518180B2 (ja) | 2008-04-16 | 2008-04-16 | 半導体装置、および、その製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7888751B2 (ja) |
JP (1) | JP4518180B2 (ja) |
CN (1) | CN101562194B (ja) |
TW (1) | TWI414068B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013143437A (ja) * | 2012-01-10 | 2013-07-22 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
KR101348032B1 (ko) * | 2011-11-10 | 2014-01-03 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 핀 전계 효과 트랜지스터 및 이의 제조 방법 |
JP2014110430A (ja) * | 2012-11-30 | 2014-06-12 | St Microelectron Inc | 分離型チャンネルを具備したfinfet装置 |
KR101441747B1 (ko) * | 2012-06-14 | 2014-09-17 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | FinFET 디바이스를 위한 구조 및 방법 |
Families Citing this family (22)
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US8021949B2 (en) * | 2009-12-01 | 2011-09-20 | International Business Machines Corporation | Method and structure for forming finFETs with multiple doping regions on a same chip |
US8008146B2 (en) * | 2009-12-04 | 2011-08-30 | International Business Machines Corporation | Different thickness oxide silicon nanowire field effect transistors |
JP5569243B2 (ja) | 2010-08-09 | 2014-08-13 | ソニー株式会社 | 半導体装置及びその製造方法 |
US8946829B2 (en) * | 2011-10-14 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications |
CN103107192B (zh) * | 2011-11-10 | 2016-05-18 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
CN103107187B (zh) * | 2011-11-10 | 2016-04-13 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置的制造方法 |
US8748989B2 (en) * | 2012-02-28 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistors |
US8546891B2 (en) | 2012-02-29 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin profile structure and method of making same |
US9159626B2 (en) * | 2012-03-13 | 2015-10-13 | United Microelectronics Corp. | FinFET and fabricating method thereof |
KR101823105B1 (ko) * | 2012-03-19 | 2018-01-30 | 삼성전자주식회사 | 전계 효과 트랜지스터의 형성 방법 |
FR2995722B1 (fr) * | 2012-09-17 | 2015-07-17 | Soitec Silicon On Insulator | Finfet en silicium sur isolant avec une dependance reduite vis-a-vis de la largeur du fin |
US9159832B2 (en) | 2013-03-08 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor fin structures and methods for forming the same |
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WO2018119037A1 (en) * | 2016-12-20 | 2018-06-28 | Massachusetts Institute Of Technology | High-linearity transistors |
CN109390397B (zh) | 2017-08-03 | 2023-03-10 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN109390401B (zh) * | 2017-08-10 | 2022-07-05 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
US10692769B2 (en) | 2017-08-29 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Fin critical dimension loading optimization |
US10446686B2 (en) * | 2018-03-09 | 2019-10-15 | International Business Machines Corporation | Asymmetric dual gate fully depleted transistor |
US11031397B2 (en) * | 2018-09-27 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-gate device integration with separated Fin-like field effect transistor cells and gate-all-around transistor cells |
KR102433143B1 (ko) * | 2020-02-26 | 2022-08-16 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 저차원 물질 디바이스 및 방법 |
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JPH031571A (ja) * | 1989-05-29 | 1991-01-08 | Toshiba Corp | 半導体装置 |
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-
2009
- 2009-03-06 TW TW098107480A patent/TWI414068B/zh active
- 2009-04-14 US US12/423,287 patent/US7888751B2/en active Active
- 2009-04-16 CN CN2009101327397A patent/CN101562194B/zh active Active
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101348032B1 (ko) * | 2011-11-10 | 2014-01-03 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 핀 전계 효과 트랜지스터 및 이의 제조 방법 |
US9257343B2 (en) | 2011-11-10 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating fin field effect transistors |
US9525049B2 (en) | 2011-11-10 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating fin field effect transistors |
JP2013143437A (ja) * | 2012-01-10 | 2013-07-22 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
KR101441747B1 (ko) * | 2012-06-14 | 2014-09-17 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | FinFET 디바이스를 위한 구조 및 방법 |
JP2014110430A (ja) * | 2012-11-30 | 2014-06-12 | St Microelectron Inc | 分離型チャンネルを具備したfinfet装置 |
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JP4518180B2 (ja) | 2010-08-04 |
CN101562194B (zh) | 2012-07-04 |
US20090261423A1 (en) | 2009-10-22 |
CN101562194A (zh) | 2009-10-21 |
US7888751B2 (en) | 2011-02-15 |
TW200947702A (en) | 2009-11-16 |
TWI414068B (zh) | 2013-11-01 |
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