JP2009239014A - 電極構造及び基板処理装置 - Google Patents
電極構造及び基板処理装置 Download PDFInfo
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- JP2009239014A JP2009239014A JP2008083046A JP2008083046A JP2009239014A JP 2009239014 A JP2009239014 A JP 2009239014A JP 2008083046 A JP2008083046 A JP 2008083046A JP 2008083046 A JP2008083046 A JP 2008083046A JP 2009239014 A JP2009239014 A JP 2009239014A
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- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 230000002093 peripheral effect Effects 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 abstract description 15
- 239000007789 gas Substances 0.000 description 25
- 238000001020 plasma etching Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】ウエハWにRIE処理を施す基板処理装置10が備える処理室11内に配置され、該処理室11内においてサセプタ12に載置されたウエハWと対向する上部電極31は、サセプタ12に載置されたウエハWの中心部に対向する内側電極34と、該ウエハWの周縁部に対向する外側電極35とを備え、内側電極34には第1の直流電源37が接続され、且つ外側電極35には第2の直流電源38が接続され、外側電極35は、サセプタ12に載置されたウエハWに平行な第1の二次電子放出面35aと、該第1の二次電子放出面35aに対してウエハWへ向けて傾斜する第2の二次電子放出面35bとを有する。
【選択図】図2
Description
まず、本発明者は基板処理装置10において載置ウエハWにRIE処理を施し、該RIE処理における載置ウエハWの周縁部のエッチレートを計測し、その結果を図5のグラフに「●」でプロットした。
次に、本発明者は、外側電極35の代わりに、載置ウエハWに平行な表面のみを有し、互いに該表面の面積が異なる2つの外側電極を準備した。そして、基板処理装置10において外側電極35を準備された各外側電極と取り替え、載置ウエハWにRIE処理を施し、該RIE処理における載置ウエハWの周縁部のエッチレートを計測し、その結果を図5のグラフに「◆」でプロットした。
10 基板処理装置
11 処理室
12 サセプタ
31 上部電極
34 内側電極
35 外側電極
35a 第1の二次電子放出面
35b 第2の二次電子放出面
37 第1の直流電源
38 第2の直流電源
Claims (3)
- 基板にプラズマ処理を施す基板処理装置が備える処理室内に配置され、該処理室内において載置台に載置された前記基板と対向する電極構造であって、
前記基板の中心部に対向する内側電極と、前記基板の周縁部に対向する外側電極とを備え、
前記内側電極には第1の直流電源が接続され、且つ前記外側電極には第2の直流電源が接続され、
前記外側電極は、前記基板に平行な第1の面と、該第1の面に対して傾斜する第2の面を有することを特徴とする電極構造。 - 前記第1の面及び前記第2の面は前記基板の周縁部を指向することを特徴とする請求項1記載の電極構造。
- 基板にプラズマ処理を施す基板処理装置において、
前記基板を収容する処理室と、
該処理室内に配置されて前記基板を載置する載置台と、
前記処理室内に配置され、且つ前記載置台に載置された前記基板と対向する電極構造とを備え、
前記電極構造は、前記基板の中心部に対向する内側電極と、前記基板の周縁部に対向する外側電極とを備え、
前記内側電極には第1の直流電源が接続され、且つ前記外側電極には第2の直流電源が接続され、
前記外側電極は、前記基板に平行な第1の面と、該第1の面に対して傾斜する第2の面を有することを特徴とする基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008083046A JP5348919B2 (ja) | 2008-03-27 | 2008-03-27 | 電極構造及び基板処理装置 |
US12/407,109 US20090242133A1 (en) | 2008-03-27 | 2009-03-19 | Electrode structure and substrate processing apparatus |
CN2009101294603A CN101546700B (zh) | 2008-03-27 | 2009-03-20 | 电极构造和基板处理装置 |
TW098109962A TWI475610B (zh) | 2008-03-27 | 2009-03-26 | Electrode construction and substrate processing device |
KR1020110109965A KR20110131157A (ko) | 2008-03-27 | 2011-10-26 | 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008083046A JP5348919B2 (ja) | 2008-03-27 | 2008-03-27 | 電極構造及び基板処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009239014A true JP2009239014A (ja) | 2009-10-15 |
JP2009239014A5 JP2009239014A5 (ja) | 2011-05-06 |
JP5348919B2 JP5348919B2 (ja) | 2013-11-20 |
Family
ID=41115344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008083046A Active JP5348919B2 (ja) | 2008-03-27 | 2008-03-27 | 電極構造及び基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090242133A1 (ja) |
JP (1) | JP5348919B2 (ja) |
KR (1) | KR20110131157A (ja) |
CN (1) | CN101546700B (ja) |
TW (1) | TWI475610B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135781A (ja) * | 2008-11-07 | 2010-06-17 | Tokyo Electron Ltd | プラズマ処理装置及びその構成部品 |
KR20220053478A (ko) | 2020-10-22 | 2022-04-29 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5102706B2 (ja) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | バッフル板及び基板処理装置 |
US20110206833A1 (en) * | 2010-02-22 | 2011-08-25 | Lam Research Corporation | Extension electrode of plasma bevel etching apparatus and method of manufacture thereof |
US9543123B2 (en) | 2011-03-31 | 2017-01-10 | Tokyo Electronics Limited | Plasma processing apparatus and plasma generation antenna |
JP2015053384A (ja) * | 2013-09-06 | 2015-03-19 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6339866B2 (ja) * | 2014-06-05 | 2018-06-06 | 東京エレクトロン株式会社 | プラズマ処理装置およびクリーニング方法 |
US20160289827A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
KR101938306B1 (ko) | 2016-04-18 | 2019-01-14 | 최상준 | 건식 에칭장치의 제어방법 |
US10242845B2 (en) * | 2017-01-17 | 2019-03-26 | Lam Research Corporation | Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber |
KR102568084B1 (ko) * | 2020-06-02 | 2023-08-21 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003115400A (ja) * | 2001-10-02 | 2003-04-18 | Anelva Corp | 大面積ウェハー処理のプラズマ処理装置 |
JP2006270019A (ja) * | 2004-06-21 | 2006-10-05 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体 |
JP2006286814A (ja) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2007094984A2 (en) * | 2006-02-13 | 2007-08-23 | Lam Research Corporation | SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH |
JP2008147659A (ja) * | 2006-12-11 | 2008-06-26 | Tokyo Electron Ltd | 弾道電子ビーム促進プラズマ処理システムにおける均一性制御方法及びシステム |
JP2009194318A (ja) * | 2008-02-18 | 2009-08-27 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体 |
JP2009239012A (ja) * | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマエッチング方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5472565A (en) * | 1993-11-17 | 1995-12-05 | Lam Research Corporation | Topology induced plasma enhancement for etched uniformity improvement |
TW299559B (ja) * | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
US7740737B2 (en) * | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7988816B2 (en) * | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7993489B2 (en) * | 2005-03-31 | 2011-08-09 | Tokyo Electron Limited | Capacitive coupling plasma processing apparatus and method for using the same |
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2008
- 2008-03-27 JP JP2008083046A patent/JP5348919B2/ja active Active
-
2009
- 2009-03-19 US US12/407,109 patent/US20090242133A1/en not_active Abandoned
- 2009-03-20 CN CN2009101294603A patent/CN101546700B/zh active Active
- 2009-03-26 TW TW098109962A patent/TWI475610B/zh active
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2011
- 2011-10-26 KR KR1020110109965A patent/KR20110131157A/ko not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003115400A (ja) * | 2001-10-02 | 2003-04-18 | Anelva Corp | 大面積ウェハー処理のプラズマ処理装置 |
JP2006270019A (ja) * | 2004-06-21 | 2006-10-05 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体 |
JP2006286814A (ja) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2007094984A2 (en) * | 2006-02-13 | 2007-08-23 | Lam Research Corporation | SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH |
JP2008147659A (ja) * | 2006-12-11 | 2008-06-26 | Tokyo Electron Ltd | 弾道電子ビーム促進プラズマ処理システムにおける均一性制御方法及びシステム |
JP2009194318A (ja) * | 2008-02-18 | 2009-08-27 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体 |
JP2009239012A (ja) * | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマエッチング方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135781A (ja) * | 2008-11-07 | 2010-06-17 | Tokyo Electron Ltd | プラズマ処理装置及びその構成部品 |
US9337003B2 (en) | 2008-11-07 | 2016-05-10 | Tokyo Electron Limited | Plasma processing apparatus and constituent part thereof |
KR20220053478A (ko) | 2020-10-22 | 2022-04-29 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
CN101546700A (zh) | 2009-09-30 |
TW201001530A (en) | 2010-01-01 |
KR20110131157A (ko) | 2011-12-06 |
CN101546700B (zh) | 2011-04-13 |
JP5348919B2 (ja) | 2013-11-20 |
TWI475610B (zh) | 2015-03-01 |
US20090242133A1 (en) | 2009-10-01 |
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