JP2009099944A - 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 - Google Patents
薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
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- 239000004065 semiconductor Substances 0.000 claims abstract description 148
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Thin Film Transistor (AREA)
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- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】薄膜トランジスタは、ゲート電極と、ゲート絶縁層と、アモルファス酸化物からなる半導体層と、ソース電極と、ドレイン電極と、保護層とを含む。保護層は、半導体層の上に半導体層と接して設けられる。半導体層は、少なくともチャネル層として機能する第1の層と、第1の層よりも高抵抗な第2の層とを含む。第2の層は、半導体層において保護層側に設けられる。
【選択図】図1
Description
以下、図8を参照して、半導体層4の構成について詳細に説明する。
2 ゲート電極
3 ゲート絶縁層
4 半導体層
4a 第1の層
4b 第2の層
5 ソース電極
6 ドレイン電極
7 保護層
Claims (10)
- ゲート電極と、ゲート絶縁層と、アモルファス酸化物からなる半導体層と、ソース電極と、ドレイン電極と、保護層と、を含む薄膜トランジスタであって、
前記保護層は前記半導体層の上に該半導体層と接して設けられ、
前記半導体層が、少なくともチャネル層として機能する第1の層と、該第1の層よりも高抵抗な第2の層と、を含み、
前記第2の層は、前記半導体層において前記保護層側に設けられていることを特徴とする薄膜トランジスタ。 - 前記第2の層の質量密度が、前記第1の層の質量密度以下であることを特徴とする請求項1記載の薄膜トランジスタ。
- 前記第2の層の質量密度が、該第2の層を構成する材料の結晶状態における質量密度の90%以下であることを特徴とする請求項1又は2記載の薄膜トランジスタ。
- 前記第2の層が柱状構造を含むことを特徴とする請求項1から3のいずれか1項記載の薄膜トランジスタ。
- 前記柱状構造をなす柱の径の平均値が、前記半導体層の厚さの2/3以下であることを特徴とする請求項4記載の薄膜トランジスタ。
- 前記半導体層がIn、Zn及びGaの少なくとも1つを含むアモルファス酸化物半導体からなることを特徴とする請求項1から5のいずれか1項記載の薄膜トランジスタ。
- 前記第1の層は、前記半導体層において前記ゲート電極側に設けられていることを特徴とする請求項1から6のいずれか1項記載の薄膜トランジスタ。
- ゲート電極と、ゲート絶縁層と、アモルファス酸化物からなる半導体層と、ソース電極とドレイン電極と、保護層と、で形成される薄膜トランジスタの製造方法であって、
前記ゲート電極を形成する工程と、
前記ゲート絶縁層を形成する工程と、
前記半導体層を形成する工程と、
前記ソース電極及び前記ドレイン電極を形成する工程と、
前記保護層を形成する工程と、を含み、
前記保護層は前記半導体層の上に該半導体層と接して設けられ、
前記半導体層を形成する工程は、少なくともチャネル層として機能する第1の層を形成する工程と、該第1の層よりも高抵抗な第2の層を形成する工程と、を含み、
前記保護層を酸化雰囲気中で形成することを特徴とする薄膜トランジスタの製造方法。 - ゲート電極と、ゲート絶縁層と、アモルファス酸化物からなる半導体層と、ソース電極とドレイン電極と、保護層と、で形成される薄膜トランジスタの製造方法であって、
前記ゲート電極を形成する工程と、
前記ゲート絶縁層を形成する工程と、
前記半導体層を形成する工程と、
前記ソース電極及び前記ドレイン電極を形成する工程と、
前記保護層を形成する工程と、
前記保護層の形成の後に、酸化雰囲気中で熱処理を施す工程と、を含み、
前記保護層は前記半導体層の上に該半導体層と接して設けられ、
前記熱処理を施す工程は、前記半導体層に、前記ゲート絶縁層と接し、少なくともチャネル層として機能する第1の層と、前記保護層と接し該第1の層よりも高抵抗な第2の層を形成する工程を含むことを特徴とする薄膜トランジスタの製造方法。 - 請求項1から7のいずれか1項記載の薄膜トランジスタを用いた表示装置。
Priority Applications (8)
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JP2008196038A JP4759598B2 (ja) | 2007-09-28 | 2008-07-30 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
CN2008801082923A CN101809747B (zh) | 2007-09-28 | 2008-09-18 | 薄膜晶体管、其制造方法和使用薄膜晶体管的显示装置 |
US12/672,103 US8563977B2 (en) | 2007-09-28 | 2008-09-18 | Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same |
EP08833155A EP2195848B1 (en) | 2007-09-28 | 2008-09-18 | Thin film transistor, manufacturing method therefor, and display apparatus using the same |
PCT/JP2008/067363 WO2009041544A1 (en) | 2007-09-28 | 2008-09-18 | Thin film transistor, manufacturing method therefor, and display apparatus using the same |
KR1020107008596A KR101148718B1 (ko) | 2007-09-28 | 2008-09-18 | 박막 트랜지스터, 그 제조 방법 및 그것을 사용한 표시 장치 |
TW097136880A TWI377683B (en) | 2007-09-28 | 2008-09-25 | Thin film transistor, manufacturing method therefor, and display apparatus using the same |
US13/369,406 US20120132911A1 (en) | 2007-09-28 | 2012-02-09 | Thin film transistor having a two-layer semiconductor, manufacturing method therefor, and display apparatus using the same |
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JP2011031543A Expired - Fee Related JP5395825B2 (ja) | 2007-09-28 | 2011-02-17 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
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EP (1) | EP2195848B1 (ja) |
JP (2) | JP4759598B2 (ja) |
KR (1) | KR101148718B1 (ja) |
CN (1) | CN101809747B (ja) |
TW (1) | TWI377683B (ja) |
WO (1) | WO2009041544A1 (ja) |
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WO2009041544A1 (en) | 2009-04-02 |
KR101148718B1 (ko) | 2012-05-21 |
KR20100061559A (ko) | 2010-06-07 |
US20120132911A1 (en) | 2012-05-31 |
EP2195848A1 (en) | 2010-06-16 |
US8563977B2 (en) | 2013-10-22 |
JP5395825B2 (ja) | 2014-01-22 |
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JP2011146724A (ja) | 2011-07-28 |
TWI377683B (en) | 2012-11-21 |
EP2195848B1 (en) | 2012-07-18 |
CN101809747A (zh) | 2010-08-18 |
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US20100213459A1 (en) | 2010-08-26 |
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