JP2009099778A - メモリ素子及び表示装置 - Google Patents
メモリ素子及び表示装置 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 claims abstract description 66
- 239000010409 thin film Substances 0.000 claims abstract description 64
- 239000010408 film Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 230000015654 memory Effects 0.000 claims description 123
- 239000011159 matrix material Substances 0.000 abstract description 18
- 239000004973 liquid crystal related substance Substances 0.000 description 64
- 210000002858 crystal cell Anatomy 0.000 description 41
- 230000009977 dual effect Effects 0.000 description 38
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 16
- 239000010410 layer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 8
- 238000007599 discharging Methods 0.000 description 8
- 230000006386 memory function Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 101100042615 Arabidopsis thaliana SIGD gene Proteins 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 101100042610 Arabidopsis thaliana SIGB gene Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101100294408 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MOT2 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 101150117326 sigA gene Proteins 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
- G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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- Physics & Mathematics (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Thin Film Transistor (AREA)
- Shift Register Type Memory (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
【解決手段】メモリ素子は、一個の薄膜トランジスタと一個の容量とからなる。薄膜トランジスタは、半導体薄膜PSIと、絶縁膜1GOX,2GOXを介して半導体薄膜PSIを上下から挟む一対のゲート電極F−GATE、S−GATEとを有する。容量は、一対のゲート電極のうち第1のゲート電極F−GATEに接続している。第1のゲート電極F−GATEに接続した容量にデータを蓄え、一対のゲート電極のうち第2のゲート電極S−GATEを制御して容量に蓄えたデータを読み出す。
【選択図】図1
Description
一方読み出し動作では、ゲート線GATEをLレベルに切換え、書込み線WRITEもLレベルとする。一方データ線SIGは共通電位VCOMにする。これによりスイッチングトランジスタTr2はオフするのでデュアルゲート型トランジスタTr1の出力電流端は容量Cから切り離される。ここで容量Cに書き込まれたデータがHの場合、デュアルゲート型トランジスタTr1はオン状態となり、液晶セルLCの画素電極にはデータ線SIGからVCOMが印加される。液晶セルLCの画素電極及び対向電極は共にVCOMとなるため、液晶セルLCには電圧が印加されない。一方容量Cに書き込まれたデータがLレベルのとき、デュアルゲート型の薄膜トランジスタTr1はオフ状態となり、データ線SIGは液晶セルLCの画素電極から切り離される。液晶セルLCの画素電極には対向電極側のVCOMに対して所定の電圧が印加され続けるので、表示状態を維持する。
Claims (8)
- 薄膜トランジスタと容量とからなり、
前記薄膜トランジスタは、半導体薄膜と、絶縁膜を介して該半導体薄膜を上下から挟む一対のゲート電極とを有し、
前記容量は、一対のゲート電極のうち第1のゲート電極に接続し、
第1のゲート電極に接続した該容量にデータを蓄え、
一対のゲート電極のうち第2のゲート電極を制御して該容量に蓄えたデータを読み出すことを特徴とするメモリ素子。 - 前記薄膜トランジスタは、データの入力側となる入力電流端と、データの出力側となる出力電流端とを有し、
該出力電流端と該容量との間に配されたスイッチを備え、
データの書き込み時、該スイッチをオンした状態で第2のゲート電極を制御して、入力電流端から供給されたデータを該容量に書き込み、
データの読み出し時、該スイッチをオフした状態で該第2のゲート電極を制御して、該容量に書き込まれたデータを出力電流端に読み出すことを特徴とする請求項1記載のメモリ素子。 - 前記薄膜トランジスタは、該容量に書き込まれたデータに応じた電圧が該第1のゲート電極に加わることで閾電圧が変化し、
該第2のゲート電極を制御して該閾電圧の変化を該薄膜トランジスタのオン状態とオフ状態の変化としてデータを読み出すことを特徴とする請求項2記載のメモリ素子。 - 行状のゲート線と、列状のデータ線と、両者が交差する部分に配された画素とを備え、
各画素は、メモリ素子と電気光学素子とを含み、
前記メモリ素子は、データ線から供給されたデータを記憶するとともに、ゲート線から供給された信号に応じてデータを読出し、
前記電気光学素子は、該記憶されたデータに応じた輝度を呈する表示装置であって、
前記メモリ素子は、薄膜トランジスタと容量とからなり、
前記薄膜トランジスタは、半導体薄膜と、絶縁膜を介して該半導体薄膜を上下から挟む一対のゲート電極とを有し、
前記容量は、一対のゲート電極のうち第1のゲート電極に接続し、
第1のゲート電極に接続した該容量にデータを蓄え、
該ゲート線から第2のゲート電極を制御して該容量に蓄えたデータを読み出すことを特徴とする表示装置。 - 前記薄膜トランジスタは、データ線に接続した入力電流端と、該電気光学素子に接続した出力電流端とを有し、
該出力電流端と該容量との間に配されたスイッチを備え、
データの書き込み時、該スイッチをオンした状態でゲート線から第2のゲート電極を制御して、入力電流端から供給されたデータを該容量に書き込み、
データの読み出し時、該スイッチをオフした状態でゲート線から該第2のゲート電極を制御して、該容量に書き込まれたデータを出力電流端に読み出すことを特徴とする請求項4記載の表示装置。 - 前記スイッチも薄膜トランジスタからなり、データのリーク防止のため外光から遮光されていることを特徴とする請求項5記載の表示装置。
- 前記画素は、データ線と電気光学素子との間に直列接続された複数のメモリ素子を含み、
各メモリ素子に対応した複数のゲート線により各メモリ素子を時分割的に制御して多階調に対応したと多ビットデータを書き込み、
更に書き込まれた多ビットデータに応じて該電気光学素子を時分割駆動し、以って電気光学素子の輝度を多階調制御することを特徴とする請求項4記載の表示装置。 - 前記画素は、複数の領域に面積分割されており、
各領域ごとに電気光学素子とメモリ素子とを含んでおり、
複数の領域に配された複数のメモリ素子に多ビットデータを書き込み、以って書き込まれた多ビットデータに応じて該画素の輝度を多階調制御することを特徴とする請求項4記載の表示装置。
Priority Applications (5)
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JP2007270119A JP4524699B2 (ja) | 2007-10-17 | 2007-10-17 | 表示装置 |
TW097137803A TW200939456A (en) | 2007-10-17 | 2008-10-01 | Memory element and display device |
KR1020080097849A KR101455356B1 (ko) | 2007-10-17 | 2008-10-06 | 메모리 소자 및 표시장치 |
US12/248,646 US8144102B2 (en) | 2007-10-17 | 2008-10-09 | Memory element and display device |
CN2008101715171A CN101414436B (zh) | 2007-10-17 | 2008-10-17 | 存储元件和显示装置 |
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JP2007270119A JP4524699B2 (ja) | 2007-10-17 | 2007-10-17 | 表示装置 |
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JP2009099778A true JP2009099778A (ja) | 2009-05-07 |
JP4524699B2 JP4524699B2 (ja) | 2010-08-18 |
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JP (1) | JP4524699B2 (ja) |
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CN (1) | CN101414436B (ja) |
TW (1) | TW200939456A (ja) |
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US8309964B2 (en) | 2009-10-27 | 2012-11-13 | Samsung Electronics Co., Ltd. | Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor |
US8928564B2 (en) | 2010-05-10 | 2015-01-06 | Samsung Display Co., Ltd. | Pixel circuit of a flat panel display device and method of driving the same |
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US9299723B2 (en) | 2010-05-21 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with light-blocking layers |
JP2016042585A (ja) * | 2011-09-16 | 2016-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000131713A (ja) * | 1998-10-26 | 2000-05-12 | Sony Corp | 液晶表示装置 |
JP2003151990A (ja) * | 2001-11-16 | 2003-05-23 | Toshiba Corp | 薄膜トランジスタ、液晶表示装置及びこれらの製造方法 |
WO2007023011A2 (en) * | 2005-08-24 | 2007-03-01 | International Business Machines Corporation | Dual port gain cell with side and top gated read transistor |
JP2007201399A (ja) * | 2005-06-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2980574B2 (ja) | 1997-07-31 | 1999-11-22 | 株式会社東芝 | 液晶表示装置および薄膜トランジスタ |
US6806862B1 (en) * | 1998-10-27 | 2004-10-19 | Fujitsu Display Technologies Corporation | Liquid crystal display device |
US6992652B2 (en) * | 2000-08-08 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
US7612749B2 (en) * | 2003-03-04 | 2009-11-03 | Chi Mei Optoelectronics Corporation | Driving circuits for displays |
CN100419835C (zh) * | 2003-11-07 | 2008-09-17 | 三洋电机株式会社 | 像素电路及显示装置 |
KR101086477B1 (ko) * | 2004-05-27 | 2011-11-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 제조 방법 |
JP2007000008A (ja) | 2005-06-21 | 2007-01-11 | Benhaa Hakari Kk | 捕虫器 |
CN100565868C (zh) * | 2005-06-28 | 2009-12-02 | 株式会社半导体能源研究所 | 半导体器件 |
TWI330726B (en) * | 2005-09-05 | 2010-09-21 | Au Optronics Corp | Display apparatus, thin-film-transistor discharge method and electrical driving method therefor |
JP2008033241A (ja) * | 2006-07-04 | 2008-02-14 | Seiko Epson Corp | 電気泳動装置、電気泳動装置の駆動方法、電子機器 |
-
2007
- 2007-10-17 JP JP2007270119A patent/JP4524699B2/ja not_active Expired - Fee Related
-
2008
- 2008-10-01 TW TW097137803A patent/TW200939456A/zh not_active IP Right Cessation
- 2008-10-06 KR KR1020080097849A patent/KR101455356B1/ko active IP Right Grant
- 2008-10-09 US US12/248,646 patent/US8144102B2/en not_active Expired - Fee Related
- 2008-10-17 CN CN2008101715171A patent/CN101414436B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000131713A (ja) * | 1998-10-26 | 2000-05-12 | Sony Corp | 液晶表示装置 |
JP2003151990A (ja) * | 2001-11-16 | 2003-05-23 | Toshiba Corp | 薄膜トランジスタ、液晶表示装置及びこれらの製造方法 |
JP2007201399A (ja) * | 2005-06-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
WO2007023011A2 (en) * | 2005-08-24 | 2007-03-01 | International Business Machines Corporation | Dual port gain cell with side and top gated read transistor |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021064799A (ja) * | 2009-08-07 | 2021-04-22 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11069817B2 (en) | 2009-09-04 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP2020017755A (ja) * | 2009-09-04 | 2020-01-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10700215B2 (en) | 2009-09-04 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US11430899B2 (en) | 2009-09-04 | 2022-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US11652174B2 (en) | 2009-09-04 | 2023-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US8963214B2 (en) | 2009-10-12 | 2015-02-24 | Samsung Display Co., Ltd. | Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device have the thin film transistor |
JP2018166219A (ja) * | 2009-10-21 | 2018-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8309964B2 (en) | 2009-10-27 | 2012-11-13 | Samsung Electronics Co., Ltd. | Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor |
JP2014187408A (ja) * | 2009-12-28 | 2014-10-02 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US10797054B2 (en) | 2009-12-28 | 2020-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US9472559B2 (en) | 2009-12-28 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US11424246B2 (en) | 2009-12-28 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
JP2022024155A (ja) * | 2009-12-28 | 2022-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2011155255A (ja) * | 2009-12-28 | 2011-08-11 | Semiconductor Energy Lab Co Ltd | 記憶装置、半導体装置 |
US8928564B2 (en) | 2010-05-10 | 2015-01-06 | Samsung Display Co., Ltd. | Pixel circuit of a flat panel display device and method of driving the same |
US9299723B2 (en) | 2010-05-21 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with light-blocking layers |
US10622380B2 (en) | 2011-09-16 | 2020-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, light-emitting device, and electronic device |
US10950633B2 (en) | 2011-09-16 | 2021-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, light-emitting device, and electronic device |
US9508709B2 (en) | 2011-09-16 | 2016-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, light-emitting device, and electronic device |
US10032798B2 (en) | 2011-09-16 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, light-emitting device, and electronic device |
JP2016042585A (ja) * | 2011-09-16 | 2016-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11637129B2 (en) | 2011-09-16 | 2023-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, light-emitting device, and electronic device |
US11177262B2 (en) | 2017-05-19 | 2021-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device |
WO2018211378A1 (ja) * | 2017-05-19 | 2018-11-22 | 株式会社半導体エネルギー研究所 | 半導体装置または記憶装置 |
Also Published As
Publication number | Publication date |
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KR101455356B1 (ko) | 2014-10-27 |
US8144102B2 (en) | 2012-03-27 |
JP4524699B2 (ja) | 2010-08-18 |
KR20090039611A (ko) | 2009-04-22 |
TWI371100B (ja) | 2012-08-21 |
US20090102751A1 (en) | 2009-04-23 |
CN101414436A (zh) | 2009-04-22 |
CN101414436B (zh) | 2013-08-14 |
TW200939456A (en) | 2009-09-16 |
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