JP2008511751A - 立方晶窒化ホウ素を有する積層複合材料 - Google Patents
立方晶窒化ホウ素を有する積層複合材料 Download PDFInfo
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
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- C—CHEMISTRY; METALLURGY
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- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12576—Boride, carbide or nitride component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
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Abstract
Description
[1]には、プラズマトーチ(Plasmafackel)を通じて堆積される立方晶窒化ホウ素層が記載されている。しかしながらこの技術を用いて、数mm2の範囲内の小さな面積が被覆されることができるに過ぎない。また、この小さな被覆範囲内で、層厚分布並びに層構造は、方法に制約されて極度に不均質である。層厚は、枠領域(Rahnbereich)内で連続的にゼロまで低下し、かつ他方では窒化ホウ素がほぼ専ら立方晶で堆積されずに被覆される範囲が存在する。さらに、成長速度のかなりの変動幅の形で現れる限られた再現性が観察されうる。工具被覆及び構造部材被覆に関して、高品質において前記の理由から極度に費用がかかる複雑な工具ジオメトリー及び構造部材ジオメトリーに相応した、目的に合致した必要なプラズマトーチジェットの走査は事実上不可能である。
・ホウ素(B):中性、一回又は数回イオン化される、
・窒素(N):中性、一回又は数回イオン化される、
・酸素(O):中性、一回又は数回イオン化される、
・ホウ素原子、窒素原子及び酸素原子から構成された分子又はクラスター:中性、一回又は数回イオン化される、
・ヘリウム(He)、ネオン(Ne)、アルゴン(Ar)、クリプトン(Kr)又はキセノン(Xe)、すなわち周期表の0族の元素(希ガス、プラズマ雰囲気)、中性、一回又は数回イオン化される、
・ホウ素、窒素、酸素、ヘリウム、ネオン、アルゴン、クリプトン又はキセノンに加えて他の原子状成分も含有する、異種原子、イオン、分子又はクラスター、中性、一回又は数回イオン化される。
・ホウ素:一回又は数回イオン化される、
・窒素:一回又は数回イオン化される、
・酸素:一回又は数回イオン化される、
・ヘリウム、ネオン、アルゴン、クリプトン又はキセノン、一回又は数回イオン化される、
・ホウ素、窒素、酸素又は希ガスに加えてその他の原子状成分も含有する、異種イオン、異種分子イオン又は異種クラスターイオン、一回又は数回イオン化される。
・ホウ素対窒素[B]:[N]の比は0.85〜1.15でなければならない:0.85≦[B]:[N]≦1.15、
・酸素濃度[O]は3原子%〜15原子%でなければならない:3原子%≦[O]≦15原子%、
・ヘリウム[He]、ネオン[Ne]、アルゴン[Ar]、クリプトン[Kr]又はキセノン[Xe]の濃度の総和は、7原子%までであってよい:[He]+[Ne]+[Ar]+[Kr]+[Xe]≦7原子%
・ホウ素、窒素、酸素、ヘリウム、ネオン、アルゴン、クリプトン又はキセノン以外の他の原子状粒子の濃度は5原子%までであってよいが、しかしながら前記粒子が立方晶相の形成を特定濃度から防止する場合には、より少なく保持されなければならず、かつこの濃度は5原子%未満であるべきである。
本発明は、例示的な試験系列に基づき次の図を用いてより詳細に説明される。
マグネトロン噴霧ユニットの化学量論的な六方晶窒化ホウ素−ターゲットに、高周波(H.F.-)ターゲット出力500Wをかけ、Ar−O2−混合物中に噴霧する。前記ガス混合物は、Ar 45sccm、N2 0sccm、80%対20%のAr対O2の混合比を有するAr−O2−ガス混合物3sccmからなる。作業ガス圧は0.26Paであり、かつ基板温度は350℃である。負の基板バイアス電圧の値は、等距離の時間間隔で0Vから30Vのステップで330Vまで及びその後350Vに高めた。
マグネトロン噴霧ユニットの化学量論的な六方晶窒化ホウ素−ターゲットに、高周波ターゲット出力500Wをかけ、Ar−N2−O2−混合物中に噴霧する。基板温度は350℃であり、かつ負の基板バイアス電圧の値は350Vである。前記ガス混合物は、Ar 45sccm及び80%対20%のAr対O2の混合比を有するAr−O2−ガス混合物3sccmからなる。窒素ガスを、等距離の時間間隔で0sccmから0.5sccmのステップで5sccmに及びその後1sccmのステップで10sccmに高める。作業ガス圧は初めに0.26Paであり、かつ最後に0.29Paである。
マグネトロン噴霧ユニットの化学量論的な六方晶窒化ホウ素−ターゲットに、高周波ターゲット出力500Wをかけ、Ar−N2−O2−混合物中に噴霧する。基板温度は350℃であり、かつ負の基板バイアス電圧の値は350Vである。前記ガス混合物は、Ar 45sccm、80%対20%のAr対O2の混合比を有するAr−O2−ガス混合物3sccm及びN2 10sccmからなる。作業ガス圧は0.29Paである。
・核生成プロセスの間に、これは少なくとも120℃でなければならない:TS≧120℃、
・基板の溶融温度TM,Sの90%よりも低くなければならない:TS≦TM,S
・酸素含有の立方晶窒化ホウ素層の溶融温度TM,c-BN:Oの90%よりも低くなければならない:TS≦TM,c-BN:O
前記の個々の層の組成は、AES(オージェ−電子−分光学)を用いて決定した。図2aは例示的に、表面清浄化のための20nmの除去(Abtrag)後の全厚500nmを有する第1表に記載された積層複合材料の300nmの厚さの酸素含有の立方晶窒化ホウ素層の全体スペクトル(c/s=運動エネルギー[eV]に関する毎秒の信号)を示す。スペクトル中で、元素ホウ素、窒素及び酸素に割り当てられることができる3つの信号が確認可能である。原子濃度は、これから、ホウ素については48.6原子%、窒素については46.6原子%及び酸素については4.9原子%となる。
[1]S. Matsumoto, W. Zhang: Jpn. J. Appl. Phys. 39 (2000) L442
[2]K. Yamamoto, M. Keunecke, K. Bewilogua: Thin Solid Films, 377/378 (2000) 331
[3]D. Litvinov, C.A. Taylor, R. Clarke: Diamond Relat. Mater. 7 (1998) 360
[4]H.-G. Boyen, P. Widmayer, D. Schwertberger, N. Deyneka, P. Ziemann: Appl- Phys. Lett. 76, (2000) 709
Claims (7)
- 基板上の積層複合材料であって、前記積層複合材料の少なくとも1つの単一層が立方晶窒化ホウ素を含有し、かつ堆積を通じて製造されている積層複合材料において、立方晶窒化ホウ素が、堆積の間に添加された酸素を含有していることを特徴とする、積層複合材料。
- 積層複合材料が単一層からなる、請求項1記載の積層複合材料。
- 堆積を、PVD法又はプラズマアシストCVD法を用いて行う、請求項1又は2記載の積層複合材料。
- 基板が完全にか又は部分的に、切削加工工具又は塑性加工工具の表面によって形成されている、請求項1から3までのいずれか1項記載の積層複合材料。
- 積層複合材料が、ホウ素に富むイオンエネルギー−傾斜した接着促進剤層(Haftvermittlerschicht)、組成傾斜した窒化ホウ素−酸素−核生成層並びに立方晶窒化ホウ素−酸素−保護層を前記の順序で基板上に含む、請求項1から4までのいずれか1項記載の積層複合材料。
- 少なくとも2つの単一層タイプの周期的な順序を含み、かつ単一層タイプの少なくとも1つが酸素含有の立方晶窒化ホウ素を含有する、請求項1から5までのいずれか1項記載の積層複合材料。
- 少なくとも1つの単一層が、成分が酸素含有の立方晶窒化ホウ素を含有するナノコンポジットである、請求項1から6までのいずれか1項記載の積層複合材料。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102004042407.1 | 2004-09-02 | ||
DE200410042407 DE102004042407A1 (de) | 2004-09-02 | 2004-09-02 | Schichtverbund mit kubischen Bornitrid |
PCT/EP2005/008830 WO2006024386A2 (de) | 2004-09-02 | 2005-08-13 | Schichtverbund mit kubischen bornitrid |
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JP2008511751A true JP2008511751A (ja) | 2008-04-17 |
JP5192810B2 JP5192810B2 (ja) | 2013-05-08 |
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JP2007528683A Expired - Fee Related JP5192810B2 (ja) | 2004-09-02 | 2005-08-13 | 立方晶窒化ホウ素を有する積層複合材料 |
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US (1) | US7914903B2 (ja) |
EP (1) | EP1784524A2 (ja) |
JP (1) | JP5192810B2 (ja) |
CN (1) | CN101010445B (ja) |
DE (1) | DE102004042407A1 (ja) |
WO (1) | WO2006024386A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012502188A (ja) * | 2008-09-12 | 2012-01-26 | ブリガム・ヤング・ユニバーシティ | 酸素化ガスが注入された膜、およびその製造方法 |
WO2018074418A1 (ja) * | 2016-10-19 | 2018-04-26 | 国立大学法人名古屋大学 | cBN形成体およびcBN膜の製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT504909B1 (de) * | 2007-03-27 | 2008-09-15 | Boehlerit Gmbh & Co Kg | Hartmetallkörper mit einer beschichtung aus kubischem bornitrid |
US8337950B2 (en) * | 2007-06-19 | 2012-12-25 | Applied Materials, Inc. | Method for depositing boron-rich films for lithographic mask applications |
JP5943713B2 (ja) * | 2012-05-31 | 2016-07-05 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
JP5945162B2 (ja) * | 2012-05-31 | 2016-07-05 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
CN105648419B (zh) * | 2016-01-20 | 2018-09-25 | 杭州电子科技大学 | 一种降低六方氮化硼二维薄膜厚度的方法 |
CN105483646B (zh) * | 2016-01-20 | 2019-01-18 | 杭州电子科技大学 | 一种紫外吸收薄膜的制备方法 |
CH713453A1 (de) * | 2017-02-13 | 2018-08-15 | Evatec Ag | Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche. |
US11157717B2 (en) * | 2018-07-10 | 2021-10-26 | Next Biometrics Group Asa | Thermally conductive and protective coating for electronic device |
CN110230040B (zh) * | 2019-07-04 | 2021-06-04 | 刘禹超 | 一种立方氮化硼薄膜的生产方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62207869A (ja) * | 1986-03-06 | 1987-09-12 | Sumitomo Electric Ind Ltd | 酸素含有硬質窒化硼素被覆部品 |
JPS63171868A (ja) * | 1987-01-12 | 1988-07-15 | Kobe Steel Ltd | 窒化硼素被覆層を有する複合材料 |
JPS63502289A (ja) * | 1986-01-21 | 1988-09-01 | バッテル・ディベロプメント・コ−ポレ−ション | 立方晶系窒化ホウ素の調製 |
JPH03285062A (ja) * | 1990-03-30 | 1991-12-16 | Nissin Electric Co Ltd | 窒化ホウ素薄膜被覆基体とその製造方法 |
JP2000508377A (ja) * | 1996-04-04 | 2000-07-04 | ケンナメタル インコーポレイテッド | ホウ素及び窒素を含む超硬質コーティングを有する基体及びその製造方法 |
JP2004211135A (ja) * | 2002-12-27 | 2004-07-29 | Kobe Steel Ltd | 密着性に優れた硬質皮膜およびその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2649974B1 (fr) * | 1989-07-21 | 1991-09-27 | Aerospatiale | Materiau carbone protege contre l'oxydation par du carbonitrure de bore |
US5670252A (en) * | 1991-03-11 | 1997-09-23 | Regents Of The University Of California | Boron containing multilayer coatings and method of fabrication |
US6004671A (en) * | 1994-01-20 | 1999-12-21 | Research Institute Of Advanced Material Gas-Generator, Ltd. | Reinforcement for composite material and composite material using the same |
DE4407274C1 (de) * | 1994-03-04 | 1995-03-30 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von verschleißfesten Schichten aus kubischem Bornitrid und ihre Anwendung |
EP0701982B1 (en) * | 1994-09-16 | 2002-07-03 | Sumitomo Electric Industries, Limited | Layered film made of ultrafine particles and a hard composite material for tools possessing the film |
JP3573256B2 (ja) * | 1998-07-27 | 2004-10-06 | 住友電気工業株式会社 | Al2O3被覆cBN基焼結体切削工具 |
US6593015B1 (en) * | 1999-11-18 | 2003-07-15 | Kennametal Pc Inc. | Tool with a hard coating containing an aluminum-nitrogen compound and a boron-nitrogen compound and method of making the same |
US6607782B1 (en) * | 2000-06-29 | 2003-08-19 | Board Of Trustees Of The University Of Arkansas | Methods of making and using cubic boron nitride composition, coating and articles made therefrom |
DE10360482B4 (de) * | 2002-12-27 | 2014-07-31 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Co., Ltd.) | Harter Überzug mit hervorragender Haftung |
JP4160898B2 (ja) * | 2003-12-25 | 2008-10-08 | 住友電工ハードメタル株式会社 | 高強度高熱伝導性立方晶窒化硼素焼結体 |
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2004
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- 2005-08-13 JP JP2007528683A patent/JP5192810B2/ja not_active Expired - Fee Related
- 2005-08-13 CN CN2005800294837A patent/CN101010445B/zh not_active Expired - Fee Related
- 2005-08-13 WO PCT/EP2005/008830 patent/WO2006024386A2/de active Application Filing
- 2005-08-13 EP EP05774034A patent/EP1784524A2/de not_active Withdrawn
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63502289A (ja) * | 1986-01-21 | 1988-09-01 | バッテル・ディベロプメント・コ−ポレ−ション | 立方晶系窒化ホウ素の調製 |
JPS62207869A (ja) * | 1986-03-06 | 1987-09-12 | Sumitomo Electric Ind Ltd | 酸素含有硬質窒化硼素被覆部品 |
JPS63171868A (ja) * | 1987-01-12 | 1988-07-15 | Kobe Steel Ltd | 窒化硼素被覆層を有する複合材料 |
JPH03285062A (ja) * | 1990-03-30 | 1991-12-16 | Nissin Electric Co Ltd | 窒化ホウ素薄膜被覆基体とその製造方法 |
JP2000508377A (ja) * | 1996-04-04 | 2000-07-04 | ケンナメタル インコーポレイテッド | ホウ素及び窒素を含む超硬質コーティングを有する基体及びその製造方法 |
JP2004211135A (ja) * | 2002-12-27 | 2004-07-29 | Kobe Steel Ltd | 密着性に優れた硬質皮膜およびその製造方法 |
Non-Patent Citations (2)
Title |
---|
JPN5007014850; FREUDENSTEIN R: THIN SOLID FILMS V420-421, 20021202, P132-138, ELSEVIER SEQUOIA * |
JPN6011029985; Tsutomu Ikeda et al.: 'Formation of cubic boron nitride films by arc-like plasma-enhanced ion plating method' J.vac Sci.Technol.A Vol.8 No.4, 1990, 3168-3174 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012502188A (ja) * | 2008-09-12 | 2012-01-26 | ブリガム・ヤング・ユニバーシティ | 酸素化ガスが注入された膜、およびその製造方法 |
WO2018074418A1 (ja) * | 2016-10-19 | 2018-04-26 | 国立大学法人名古屋大学 | cBN形成体およびcBN膜の製造方法 |
Also Published As
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CN101010445B (zh) | 2013-03-27 |
WO2006024386A3 (de) | 2006-05-18 |
US20070141384A1 (en) | 2007-06-21 |
DE102004042407A1 (de) | 2006-03-23 |
CN101010445A (zh) | 2007-08-01 |
US7914903B2 (en) | 2011-03-29 |
EP1784524A2 (de) | 2007-05-16 |
WO2006024386A2 (de) | 2006-03-09 |
JP5192810B2 (ja) | 2013-05-08 |
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