JP2008508717A - 相補型金属−酸化膜−半導体電界効果トランジスタ構造 - Google Patents
相補型金属−酸化膜−半導体電界効果トランジスタ構造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 230000005669 field effect Effects 0.000 title claims abstract description 30
- 230000000295 complement effect Effects 0.000 title claims abstract description 26
- 238000005468 ion implantation Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (19)
- 半導体基板と、
前記半導体基板上に形成されるnチャネル素子と、
前記半導体基板上に形成されるpチャネル素子と、
前記nチャネル素子または前記pチャネル素子の内の一方にのみ位置するイオン注入領域とを備える相補型金属−酸化膜−半導体電界効果トランジスタ構造。 - 前記イオン注入領域は前記pチャネル素子に設けられるとともにアクセプターをドープしたイオン注入領域である、請求項1記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記半導体基板は化合物半導体基板である、請求項1記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記半導体基板上に形成されるエピタキシャル層構造と、
前記エピタキシャル層構造内に形成される少なくとも一つのドナー層とをさらに備え、前記イオン注入領域は前記エピタキシャル層構造の導電型を反転するように作用する、請求項1記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。 - 前記エピタキシャル層構造は前記半導体基板上に形成されるバッファ層と、前記バッファ層上に形成されるチャネル層と、前記チャネル層上に形成されるスペーサ層とを含む、請求項4記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記少なくとも一つのドナー層は、前記バッファ層または前記スペーサ層の内の一方の内部に形成される、請求項5記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 半導体基板と、
前記半導体基板上に形成されるエピタキシャル層構造と、
前記エピタキシャル層構造内に形成され、かつ前記エピタキシャル層構造の導電型を決定する少なくとも一つのドーパント層と、
前記半導体基板上に形成されるnチャネル素子と、
前記半導体基板上に形成されるpチャネル素子と、
前記nチャネル素子または前記pチャネル素子の内の一方にのみ設けられるとともに前記エピタキシャル層構造の前記導電型を反転させるように作用するイオン注入領域とを備える相補型金属−酸化膜−半導体電界効果トランジスタ構造。 - 前記ドーパント層はドナー原子を含み、前記イオン注入領域は前記pチャネル素子に設けられるとともにアクセプターをドープしたイオン注入領域である、請求項7記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記ドーパント層はアクセプター原子を含み、前記イオン注入領域は前記nチャネル素子に設けられるとともにドナーをドープしたイオン注入領域である、請求項7記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記エピタキシャル層構造は前記半導体基板上に形成されるバッファ層と、前記バッファ層上に形成されるチャネル層と、前記チャネル層上に形成されるスペーサ層とを含む、請求項7記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記少なくとも一つのドーパント層は、前記バッファ層または前記スペーサ層の内の一方の内部に形成される、請求項10記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記少なくとも一つのドーパント層は、前記バッファ層内に形成される第1ドナー層と、前記スペーサ層内に形成される第2ドナー層とを含む、請求項10記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 前記半導体基板は化合物半導体基板である、請求項7記載の相補型金属−酸化膜−半導体電界効果トランジスタ構造。
- 半導体基板と、
前記半導体基板上に形成されるエピタキシャル層構造と、
前記エピタキシャル層構造内に形成され、かつ前記エピタキシャル層構造の導電型を決定する少なくとも一つのドーパント層と、
前記エピタキシャル層構造及び前記半導体基板に設けられるとともに前記エピタキシャル層構造の前記導電型を反転させるように作用する少なくとも一つのイオン注入領域とを備える金属−酸化膜−半導体電界効果トランジスタ。 - 前記導電型はn型であり、
前記少なくとも一つのイオン注入領域は、p型アクセプターをドープした少なくとも一つのイオン注入領域を含む、請求項14記載の金属−酸化膜−半導体電界効果トランジスタ。 - 前記エピタキシャル層構造は前記半導体基板上に形成されるバッファ層と、前記バッファ層上に形成されるチャネル層と、前記チャネル層上に形成されるスペーサ層と、を含む、請求項14記載の金属−酸化膜−半導体電界効果トランジスタ。
- 前記少なくとも一つのドーパント層は、前記バッファ層または前記スペーサ層の内の一方の内部に形成される、請求項16記載の金属−酸化膜−半導体電界効果トランジスタ。
- 前記少なくとも一つのドーパント層は、前記バッファ層内に形成される第1ドナー層と、前記スペーサ層内に形成される第2ドナー層と、を含む、請求項16記載の金属−酸化膜−半導体電界効果トランジスタ。
- 前記半導体基板は化合物半導体基板である、請求項14記載の金属−酸化膜−半導体電界効果トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/903,784 US7119381B2 (en) | 2004-07-30 | 2004-07-30 | Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices |
PCT/US2005/021495 WO2006023025A1 (en) | 2004-07-30 | 2005-06-16 | Cmos with only a single implant |
Publications (2)
Publication Number | Publication Date |
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JP2008508717A true JP2008508717A (ja) | 2008-03-21 |
JP2008508717A5 JP2008508717A5 (ja) | 2008-07-31 |
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JP2007523559A Pending JP2008508717A (ja) | 2004-07-30 | 2005-06-16 | 相補型金属−酸化膜−半導体電界効果トランジスタ構造 |
Country Status (6)
Country | Link |
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US (1) | US7119381B2 (ja) |
JP (1) | JP2008508717A (ja) |
KR (1) | KR20070038128A (ja) |
CN (1) | CN100524658C (ja) |
TW (1) | TWI395329B (ja) |
WO (1) | WO2006023025A1 (ja) |
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- 2005-06-16 WO PCT/US2005/021495 patent/WO2006023025A1/en active Application Filing
- 2005-06-16 CN CNB200580024017XA patent/CN100524658C/zh not_active Expired - Fee Related
- 2005-06-16 KR KR1020077002248A patent/KR20070038128A/ko not_active Application Discontinuation
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TW200620654A (en) | 2006-06-16 |
KR20070038128A (ko) | 2007-04-09 |
US7119381B2 (en) | 2006-10-10 |
TWI395329B (zh) | 2013-05-01 |
CN1985365A (zh) | 2007-06-20 |
US20060022217A1 (en) | 2006-02-02 |
WO2006023025A1 (en) | 2006-03-02 |
CN100524658C (zh) | 2009-08-05 |
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